公开(公告)号：US20230271032A1

公开(公告)日：2023-08-31

申请号：US17681190

申请日：2022-02-25

Applicant: Yu-Jen WANG

Inventor： Feipei LAI ,  Jason Chia-Hsien CHENG ,  Yu-Jen WANG ,  Wei-Jen CHEN

IPC: A61N5/10 ,  G16H30/40 ,  G16H30/20

CPC classification number: A61N5/1067 ,  A61N5/1031 ,  G16H30/20 ,  G16H30/40

Abstract: A newly developed algorithm and software can effectively and accurately predict the collisions for the accelerator, phantom, and patient setups, and can help physicians to choose the noncolliding and optimized beam sets efficiently via offering the ideal hits of planning target volume (PTV) and constraints of organ at risks (OARs).

公开(公告)号：US20150096545A1

公开(公告)日：2015-04-09

申请号：US14049231

申请日：2013-10-09

Applicant: Yu-Jen Wang

Inventor： Yu-Jen Wang

IPC: F41B11/80 ,  F41B11/54

CPC classification number: F41B11/80 ,  F41B11/54 ,  F41B11/89

Abstract: A ribbon dispenser includes a body with a front cover. A cylinder is rotatably located in the body and has multiple chambers in which ribbons are received. An inlet is defined through the rear end of each chamber. A striking unit is located in the body and located behind the cylinder to introduce air into the chambers via the inlets. A revolving unit is connected to the cylinder to revolve the cylinder. A rigger is pivotably connected to the body has a driving portion to drive the striking unit. A stud protrudes from one side of the trigger so as to drive the revolving unit. The ribbons are ejected out from the body when the striking unit introduces air into the chambers. The cylinder is revolved to allow the ribbons in each room are ejected in sequence.

Abstract translation: 色带分配器包括具有前盖的主体。 圆柱体可旋转地位于主体中并且具有多个腔室，其中容纳带。 通过每个室的后端限定入口。 一个醒目的单元位于机身后面，位于气缸后面，通过入口将空气引入腔室。 旋转单元连接到气缸以使气缸旋转。 枢轴连接到主体上的操纵器具有驱动打击单元的驱动部分。 螺柱从触发器的一侧突出以驱动旋转单元。 当打击单元将空气引入室内时，带状物从体内排出。 圆筒被旋转以允许每个房间中的丝带依次排出。

公开(公告)号：US08981503B2

公开(公告)日：2015-03-17

申请号：US13421963

申请日：2012-03-16

Applicant: Robert Beach ,  Guenole Jan ,  Yu-Jen Wang ,  Witold Kula ,  Po-Kang Wang

Inventor： Robert Beach ,  Guenole Jan ,  Yu-Jen Wang ,  Witold Kula ,  Po-Kang Wang

IPC: H01L43/08 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/12

Abstract: An STT MTJ cell is formed with a magnetic anisotropy of its free and reference layers that is perpendicular to their planes of formation. The reference layer of the cell is an SAF multilayered structure with a single magnetic domain to enhance the bi-stability of the magnetoresistive states of the cell. The free layer of the cell is etched back laterally from the reference layer, so that the fringing stray field of the reference layer is no more than 15% of the coercivity of the free layer and has minimal effect on the free layer.

Abstract translation: 形成具有垂直于其形成平面的游离和参考层的磁各向异性的STT MTJ电池。 单元的参考层是具有单个磁畴的SAF多层结构，以增强单元的磁阻状态的双稳定性。 电池的自由层从参考层横向回蚀刻，使得参考层的边缘杂散场不超过自由层的矫顽力的15％，并且对自由层的影响最小。

公开(公告)号：US08889507B2

公开(公告)日：2014-11-18

申请号：US11765971

申请日：2007-06-20

Applicant: Chih-Ta Wu ,  Jason Lee ,  Chung Chien Wang ,  Hsing-Lien Lin ,  Yu-Jen Wang ,  Yeur-Luen Tu ,  Chern-Yow Hsu ,  Yuan-Hung Liu ,  Chi-Hsin Lo ,  Chia-Shiung Tsai ,  Lucy Chang ,  Chia-Lin Chen ,  Ming-Chih Tsai

Inventor： Chih-Ta Wu ,  Jason Lee ,  Chung Chien Wang ,  Hsing-Lien Lin ,  Yu-Jen Wang ,  Yeur-Luen Tu ,  Chern-Yow Hsu ,  Yuan-Hung Liu ,  Chi-Hsin Lo ,  Chia-Shiung Tsai ,  Lucy Chang ,  Chia-Lin Chen ,  Ming-Chih Tsai

IPC: H01L21/8234 ,  H01L21/8244 ,  H01L49/02 ,  H01L27/108

CPC classification number: H01L27/10814 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/75

Abstract: A capacitor and methods for forming the same are provided. The method includes forming a bottom electrode; treating the bottom electrode in an oxygen-containing environment to convert a top layer of the bottom electrode into a buffer layer; forming an insulating layer on the buffer layer; and forming a top electrode over the insulating layer.

Abstract translation: 提供电容器及其形成方法。 该方法包括形成底部电极; 在含氧环境中处理底部电极以将底部电极的顶层转化为缓冲层; 在缓冲层上形成绝缘层; 并在所述绝缘层上形成顶部电极。

公开(公告)号：US08852760B2

公开(公告)日：2014-10-07

申请号：US13448557

申请日：2012-04-17

Applicant: Yu-Jen Wang ,  Witold Kula ,  Ru-Ying Tong ,  Guenole Jan

Inventor： Yu-Jen Wang ,  Witold Kula ,  Ru-Ying Tong ,  Guenole Jan

IPC: H01L29/82 ,  G01R33/09 ,  G11B5/39

CPC classification number: G01R33/091 ,  G11B5/3906 ,  H01F10/123 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1143

Abstract: A boron or boron containing dusting layer such as CoB or FeB is formed along one or both of top and bottom surfaces of a free layer at interfaces with a tunnel barrier layer and capping layer to improve thermal stability while maintaining other magnetic properties of a MTJ stack. Each dusting layer has a thickness from 0.2 to 20 Angstroms and may be used as deposited, or at temperatures up to 400° C. or higher, or following a subsequent anneal at 400° C. or higher. The free layer may be a single layer of CoFe, Co, CoFeB or CoFeNiB, or may include a non-magnetic insertion layer. The resulting MTJ is suitable for STT-MRAM memory elements or spintronic devices. Perpendicular magnetic anisotropy is maintained in the free layer at temperatures up to 400° C. or higher. Ku enhancement is achieved and the retention time of a memory cell for STT-MRAM designs is increased.

Abstract translation: 在具有隧道势垒层和封盖层的界面处，在自由层的顶表面和底表面中的一个或两个上形成含硼或含硼的除尘层，以改善热稳定性，同时保持MTJ堆叠的其它磁性能 。 每个除尘层的厚度为0.2至20埃，可用于沉积，或在高达400℃或更高的温度下使用，或随后在400℃或更高温度下退火。 自由层可以是CoFe，Co，CoFeB或CoFeNiB的单层，或者可以包括非磁性插入层。 所得MTJ适用于STT-MRAM存储器元件或自旋电子器件。 垂直磁各向异性在高达400℃或更高的温度下保持在自由层中。 实现了Ku增强，并且用于STT-MRAM设计的存储单元的保留时间增加。

公开(公告)号：US20140077318A1

公开(公告)日：2014-03-20

申请号：US13617432

申请日：2012-09-14

Applicant: Witold Kula ,  Guenole Jan ,  Ru-Ying Tong ,  Yu-Jen Wang

Inventor： Witold Kula ,  Guenole Jan ,  Ru-Ying Tong ,  Yu-Jen Wang

IPC: H01L29/82 ,  H01L21/02

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/08

Abstract: An improved PMA STT MTJ storage element, and a method for forming it, are described. By inserting a suitable oxide layer between the storage and cap layers, improved PMA properties are obtained, increasing the potential for a larger Eb/kT thermal factor as well as a larger MR. Another important advantage is better compatibility with high processing temperatures, potentially facilitating integration with CMOS.

Abstract translation: 描述了改进的PMA STT MTJ存储元件及其形成方法。 通过在存储层和盖层之间插入合适的氧化物层，获得改进的PMA性质，增加更大的Eb / kT热因子的可能性以及较大的MR。 另一个重要的优点是更好的与高处理温度的兼容性，有可能促进与CMOS的集成。

公开(公告)号：US08670170B2

公开(公告)日：2014-03-11

申请号：US13238139

申请日：2011-09-21

Applicant: Ming-Chieh Chou ,  Yao-Hui Lee ,  Han-Wei Su ,  Yu-Jen Wang

Inventor： Ming-Chieh Chou ,  Yao-Hui Lee ,  Han-Wei Su ,  Yu-Jen Wang

IPC: G02B26/08

CPC classification number: G02B26/0841 ,  G02B26/101

Abstract: An optical scanning projection system includes a scanning light source component, a second reflecting element, a transparent element, a scanning element, a photosensitive element and a control module. The transparent element receives a main light beam emitted by the scanning light source component and reflects a part of the main light beam to be a reflected light. The reflected light is reflected by the second reflecting element, and the scanning element reflects the reflected light from the second reflecting element in a scanning manner. The photosensitive element receives the reflected light from the scanning element and outputs a sensing signal, and the control module actuates or stops actuating the scanning light source component according to the sensing signal. Therefore, when the scanning element is damaged, the control module may instantly stop actuating the scanning light source component, thereby enhancing the using safety of the optical scanning projection system.

Abstract translation: 光学扫描投影系统包括扫描光源组件，第二反射元件，透明元件，扫描元件，感光元件和控制模块。 透明元件接收由扫描光源组件发射的主光束并将主光束的一部分反射成反射光。 反射光被第二反射元件反射，扫描元件以扫描方式反射来自第二反射元件的反射光。 感光元件接收来自扫描元件的反射光并输出感测信号，并且控制模块根据感测信号来驱动或停止启动扫描光源部件。 因此，当扫描元件损坏时，控制模块可以立即停止致动扫描光源部件，从而提高光学扫描投影系统的使用安全性。

公开(公告)号：US08541855B2

公开(公告)日：2013-09-24

申请号：US13068398

申请日：2011-05-10

Applicant: Guenole Jan ,  Witold Kula ,  Ru Ying Tong ,  Yu Jen Wang

Inventor： Guenole Jan ,  Witold Kula ,  Ru Ying Tong ,  Yu Jen Wang

IPC: H01L29/82 ,  H01L43/00 ,  H01L23/552 ,  H01L29/34 ,  H01L29/74 ,  H01L31/111

CPC classification number: H01L43/10 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/1278 ,  G11B5/3909 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition or the like where n is from 2 to 30. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

Abstract translation: 公开了一种用于自旋电子器件的MTJ，并且包括薄层种子层，其通过（Co / Ni）n组合物等在上层叠层中提高垂直磁各向异性（PMA），其中n为2至30.种子层 优选为NiCr，NiFeCr，Hf，或其复合物，厚度为10〜100埃。 此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。 在CoFeB层和层叠层之间可以存在Ta插入层，以促进CoFeB层中的（100）结晶。 叠层可以用作MTJ中的参考层，偶极子层或自由层。 在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

公开(公告)号：US20130230741A1

公开(公告)日：2013-09-05

申请号：US13409456

申请日：2012-03-01

Applicant: Yu-Jen Wang ,  Witold Kula ,  Guenole Jan

Inventor： Yu-Jen Wang ,  Witold Kula ,  Guenole Jan

IPC: G11B5/64 ,  G11B5/84

CPC classification number: G01R33/098 ,  G11B5/82 ,  G11C11/161 ,  H01F10/123 ,  H01F10/16 ,  H01F10/3231 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1143

Abstract: A CoFeB or CoFeNiB magnetic layer wherein the boron content is 25 to 40 atomic % and with a thickness

Abstract translation: 使用硼含量为25〜40原子％并且厚度<20埃的CoFeB或CoFeNiB磁性层来实现磁性器件中的高垂直磁各向异性和增强的热稳定性。 将Co，Ni，Fe或其合金制成的除尘层添加到CoFeB层的顶表面和底表面，以增加磁阻以及改善Hc和Hk。 另一实施例包括在CoFeB自由层中的非磁性金属插入。 具有升高的B含量的CoFeB层可以作为自由层偶极层或参考层并入STT-MRAM存储元件或包括自旋转移振荡器的自旋电子器件中。 热稳定性增加，使得在退火至至少400℃1小时后保留大量的Hk。 实现了Ku增强，并且用于STT-MRAM设计的存储单元的保留时间增加。

公开(公告)号：US20130057936A1

公开(公告)日：2013-03-07

申请号：US13667093

申请日：2012-11-02

Applicant: YU-JEN WANG ,  CHIEN-SHIEN YEH ,  CHUNG-DE CHEN ,  HUNG-CHUNG LI

Inventor： YU-JEN WANG ,  CHIEN-SHIEN YEH ,  CHUNG-DE CHEN ,  HUNG-CHUNG LI

IPC: G02B26/08

CPC classification number: G02B26/0858 ,  G02B26/101

Abstract: A vibration-actuated micro mirror device comprises a substrate, a swinging frame, a reflection mirror, and a vibration part. The swinging frame is rotatably arranged within a first accommodating space formed on the substrate. The reflection mirror is rotatably arranged within a second accommodating space formed on the swinging frame. The vibration part further comprises a plate coupled to the substrate, and a first and a second vibration structures. The first and the second vibration structures are coupled to the plate and are spaced a distance away from each other, wherein the first vibration structure receives a first driving signal having a first frequency and the second vibration structure receives a second driving signal having a second frequency smaller than the first frequency, thereby enabling the swinging frame to rotate about the first axis while enabling the reflection mirror to rotate about the second axis.

Abstract translation: 振动致动的微反射镜装置包括基板，摆动框架，反射镜和振动部件。 摆动框架可旋转地布置在形成在基板上的第一容纳空间内。 反射镜可旋转地布置在形成在摆动框架上的第二容纳空间内。 振动部分还包括联接到基板的板，以及第一和第二振动结构。 第一振动结构和第二振动结构耦合到板并且彼此间隔开一定距离，其中第一振动结构接收具有第一频率的第一驱动信号，并且第二振动结构接收具有第二频率的第二驱动信号 小于第一频率，从而使得摆动框架能够围绕第一轴线旋转，同时使得反射镜能够围绕第二轴线旋转。