公开(公告)号：US20230066497A1

公开(公告)日：2023-03-02

申请号：US17978447

申请日：2022-11-01

Applicant: Applied Materials, Inc.

Inventor： Mei-Yee Shek ,  Bhargav S. Citla ,  Joshua Rubnitz ,  Jethro Tannos ,  Chentsau Chris Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C16/36 ,  C01B21/082 ,  C23C16/44 ,  C23C16/50 ,  C09D1/00

Abstract: Methods for plasma enhanced chemical vapor deposition (PECVD) of silicon carbonitride films are described. A flowable silicon carbonitride film is formed on a substrate surface by exposing the substrate surface to a precursor and a reactant, the precursor having a structure of general formula (I) or general formula (II) wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor, and then exposing the substrate to an ammonia plasma.

公开(公告)号：US11302549B2

公开(公告)日：2022-04-12

申请号：US16432590

申请日：2019-06-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Sriskantharajah Thirunavukarasu ,  Eng Sheng Peh ,  Srinivas D. Nemani ,  Arvind Sundarrajan ,  Avinash Avula ,  Ellie Y. Yieh

IPC: H01L21/673 ,  H01L21/67 ,  H01L21/677

Abstract: Embodiments of substrate transfer apparatus are provided herein. In some embodiments, an apparatus for storing and transporting at least one substrate in a vacuum includes a carrying case for storing one or more substrates, wherein the carrying case includes a vacuum port and a plurality of holders to hold one or more substrates within an inner volume of the carrying case; and a vacuum source in fluid connection with the carrying case via the vacuum port.

公开(公告)号：US11302519B2

公开(公告)日：2022-04-12

申请号：US14849296

申请日：2015-09-09

Applicant: APPLIED MATERIALS, INC.

Inventor： Srinivas D. Nemani ,  Jeremiah T. Pender ,  Qingjun Zhou ,  Dmitry Lubomirsky ,  Sergey G. Belostotskiy

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/02

Abstract: Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.

公开(公告)号：US11244808B2

公开(公告)日：2022-02-08

申请号：US15858789

申请日：2017-12-29

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/3065 ,  C23C16/503 ,  C23C16/26 ,  C23C16/455 ,  C23C16/50 ,  H01L21/02 ,  H01L21/67

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distribution port to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an antenna array comprising a plurality of monopole antennas extending partially into the plasma chamber, and an AC power source to supply a first AC power to the plurality of monopole antennas.

公开(公告)号：US11112697B2

公开(公告)日：2021-09-07

申请号：US16272962

申请日：2019-02-11

Applicant: Applied Materials, Inc.

Inventor： Viachslav Babayan ,  Douglas A. Buchberger, Jr. ,  Qiwei Liang ,  Ludovic Godet ,  Srinivas D. Nemani ,  Daniel J. Woodruff ,  Randy Harris ,  Robert B. Moore

IPC: H01L21/67 ,  H01L21/687 ,  G03F7/20 ,  G03F7/16 ,  G03F7/26 ,  G03F7/38 ,  G03F7/40

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

公开(公告)号：US11066747B2

公开(公告)日：2021-07-20

申请号：US15468758

申请日：2017-03-24

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Adib Khan ,  Tobin Kaufman-Osborn ,  Srinivas D. Nemani ,  Ludovic Godet

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/448 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505 ,  B05D1/00 ,  B05D1/18

Abstract: Implementations described herein relate to apparatus and methods for self-assembled monolayer (SAM) deposition. Apparatus described herein includes processing chambers having various vapor phase delivery apparatus fluidly coupled thereto. SAM precursors may be delivered to process volumes of the chambers via various apparatus which is heated to maintain the precursors in vapor phase. In one implementation, a first ampoule or vaporizer configured to deliver a SAM precursor may be fluidly coupled to the process volume of a process chamber. A second ampoule or vaporizer configured to deliver a material different from the SAM precursor may also be fluidly coupled to the process volume of the process chamber.

公开(公告)号：US11049537B2

公开(公告)日：2021-06-29

申请号：US16525470

申请日：2019-07-29

Applicant: Applied Materials, Inc.

Inventor： John O. Dukovic ,  Srinivas D. Nemani ,  Ellie Y. Yieh ,  Praburam Gopalraja ,  Steven Hiloong Welch ,  Bhargav S. Citla

IPC: H01L43/08 ,  G11C11/16 ,  H01L27/22 ,  H01L43/12 ,  H01L43/10

Abstract: One or more embodiments described herein generally relate to patterning semiconductor film stacks. Unlike in conventional embodiments, the film stacks herein are patterned without the need of etching the magnetic tunnel junction (MTJ) stack. Instead, the film stack is etched before the MTJ stack is deposited such that the spin on carbon layer and the anti-reflective coating layer are completely removed and a trench is formed within the dielectric capping layer and the oxide layer. Thereafter, MTJ stacks are deposited on the buffer layer and on the dielectric capping layer. An oxide capping layer is deposited such that it covers the MTJ stacks. An oxide fill layer is deposited over the oxide capping layer and the film stack is polished by chemical mechanical polishing (CMP). The embodiments described herein advantageously result in no damage to the MTJ stacks since etching is not required.

公开(公告)号：US20210167021A1

公开(公告)日：2021-06-03

申请号：US17171432

申请日：2021-02-09

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Srinivas Gandikota ,  Abhijit Basu Mallick ,  Srinivas D. Nemani

IPC: H01L23/532 ,  H01L21/768 ,  C23C16/455 ,  C23C16/26 ,  H01L21/285 ,  H01L21/3205 ,  H01L27/115

Abstract: A graphene barrier layer is disclosed. Some embodiments relate to a graphene barrier layer capable of preventing diffusion from a fill layer into a substrate surface and/or vice versa. Some embodiments relate to a graphene barrier layer that prevents diffusion of fluorine from a tungsten layer into the underlying substrate. Additional embodiments relate to electronic devices which contain a graphene barrier layer.

公开(公告)号：US10998200B2

公开(公告)日：2021-05-04

申请号：US16262094

申请日：2019-01-30

Applicant: Applied Materials, Inc.

Inventor： Kaushal K. Singh ,  Mei-Yee Shek ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/00 ,  H01L21/383 ,  C23C14/58 ,  C23C14/48 ,  H01L21/44

Abstract: The present disclosure provides methods for performing an annealing process on a metal containing layer in TFT display applications, semiconductor or memory applications. In one example, a method of forming a metal containing layer on a substrate includes supplying an oxygen containing gas mixture on a substrate in a processing chamber, the substrate comprising a metal containing layer disposed on an optically transparent substrate, maintaining the oxygen containing gas mixture in the processing chamber at a process pressure between about 2 bar and about 50 bar, and thermally annealing the metal containing layer in the presence of the oxygen containing gas mixture.

公开(公告)号：US20210090883A1

公开(公告)日：2021-03-25

申请号：US16578050

申请日：2019-09-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Bhargav S. Citla ,  Jethro Tannos ,  Srinivas D. Nemani ,  Joshua Rubnitz

IPC: H01L21/02 ,  C23C16/455 ,  H01J37/32

Abstract: Methods and apparatus for depositing a dielectric material include: providing a first gas mixture into a processing chamber having a substrate disposed therein; forming a first remote plasma comprising first radicals in a remote plasma source and delivering the first radicals to an interior processing region in the processing chamber to form a layer of dielectric material in an opening in a material layer disposed on the substrate in a presence of the first gas mixture and the first radicals; terminating the first remote plasma and applying a first RF bias power to the processing chamber to form a first bias plasma; contacting the layer of dielectric material with the first bias plasma to form a first treated layer of dielectric material; and subsequently forming a second remote plasma comprising second radicals in the remote plasma source and delivering the second radicals to the interior processing region in the processing chamber in a presence of a second gas mixture while applying a second RF bias power to the processing chamber to form a second bias plasma, wherein the second radicals and second bias plasma contact the first treated layer of dielectric material to increase a hydrophobicity or a viscosity of the first treated layer of dielectric material.