摘要:
A synchronous semiconductor memory device is operable in a normal mode and an alternative mode. The semiconductor device has a command bus for receiving a plurality of synchronously captured input signals, and a plurality of asynchronous input terminals for receiving a plurality of asynchronous input signals. The device further has a clock input for receiving an external clock signal thereon, with the device being specified by the manufacturer to be operated in the normal mode using an external clock signal having a frequency no less than a predetermined minimum frequency. An internal delay locked loop (DLL) clocking circuit is coupled to the clock input terminal and is responsive in normal operating mode to be responsive to the external clock signal to generate at least one internal clock signal. control circuitry in the device is responsive to a predetermined sequence of asynchronous signals applied to the device's asynchronous input terminals to place the device in an alternative mode of operation in which the internal clocking circuit is disabled, such that the device may be operated in the alternative mode using an external clock signal having a frequency less than the predetermined minimum frequency. The alternative mode of operation facilitates testing of the device at a speed less than the minimum frequency specified for the normal mode of operation.
摘要:
A memory device is operable in either a high mode or a low speed mode. In either mode 32 bits of data from each of two memory arrays are prefetched into respective sets of 32 flip-flops. In the high-speed mode, the prefetched data bits are transferred in parallel to 4 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 4 data bus terminals. In the low speed mode, two sets of prefetched data bits are transferred in parallel to 8 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 8 data bus terminals.
摘要:
A memory device is operable in either a high mode or a low speed mode. In either mode 32 bits of data from each of two memory arrays are prefetched into respective sets of 32 flip-flops. In the high-speed mode, the prefetched data bits are transferred in parallel to 4 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 4 data bus terminals. In the low speed mode, two sets of prefetched data bits are transferred in parallel to 8 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 8 data bus terminals.
摘要:
Mobile computer workstations must be sufficiently large in order to be stable, but small enough to be easily maneuverable through a work place. A vertically-adjustable mobile computer workstation of the present disclosure includes a pole rotatably attached to a base supported by a plurality of rotatable members. The pole includes a first arm rotatably attached to a second arm. A computer support is attached to the second arm and is moveable between a sitting user position and a standing user position, at least in part, by pivoting the arms of the pole with respect to one another and the moveable base.
摘要:
The present invention provides an integrated point of sale transaction terminal that includes both operator and customer interfaces. A housing for the electronics of the point of sale terminal comprises an operator interface unit integrally associated therewith and extending from one side thereof and a customer interface unit integrally associated therewith and extending from the opposing side thereof.
摘要:
A method of producing carbon nanoparticles comprises the steps of: passing a gaseous carbon source through a heated reactor; and adding catalyst supported on substrate particles or thermally decomposable catalyst precursor supported on substrate particles to the heated reactor to form a fluidised bed; such that carbon nanoparticles are formed in the heated reactor.
摘要:
First-in/first-out (“FIFO”) memory circuitry includes first and second Gray-code-based counters for respectively counting write and read clock signals. A Gray code subtractor subtracts from one another the counts output by the counters. Shift register circuitry shifts in successive data words in synchronism with the write clock signal. The shift register circuitry includes selection circuitry configured to select one of the data words based on a Gray code decoding of information from the subtractor. Circuitry may also be included to monitor the information from the subtractor to detect full or empty conditions of the shift register circuitry.
摘要:
A phase change layer may switch between more and less conductive states in response to electrical stimulation. The phase change layer may be positioned over a non-switching ovonic material which acts as an electrode, a resistive heater, and an insulating barrier. The phase change layer may be positioned over a non-switching ovonic material which acts as an electrode, a resistive heater, and a thermal barrier.
摘要:
The present invention is directed to a system, a module, and an apparatus and method for forming a microelectronic memory device. In one embodiment, a system includes a processor and a controller coupled to the processor with at least one memory module coupled to the controller, the module including a pair of memory devices oppositely positioned on respective surfaces of a substrate and interconnected by members extending through the substrate that couple terminals of the devices, the terminals being selected to include a group of terminals that are configured to communicate functionally compatible signals.
摘要:
A synchronization circuit includes a first and second phase-shifting path circuit, with each generates a phase-shifted signal responsive to an input signal and the phase-shifted signal having respective fine and coarse phase shifts relative to the input signal. Each phase-shifting path circuit adjusts the coarse and fine phase shifts responsive to control signals. A selection circuit outputs one of the phase-shifted signals responsive to a selection signal. A control circuit monitors a phase shift between the input signal and the output phase-shifted signal and develops the selection and control signals to select one of the phase-shifting path circuits and to adjust the fine phase shift of the selected path circuit and the fine and coarse phase shifts of the other path circuit. When the fine delay of the selected phase-shifting path circuit has a threshold value, the control circuit develops the selection signal to select the other phase-shifting circuit.