公开(公告)号：US20070115712A1

公开(公告)日：2007-05-24

申请号：US11654435

申请日：2007-01-16

申请人： Chris Martin ,  Brent Keeth ,  Brian Johnson ,  Walter Moden

发明人： Chris Martin ,  Brent Keeth ,  Brian Johnson ,  Walter Moden

IPC分类号： G11C5/06

CPC分类号： H05K1/181 ,  G11C5/04 ,  G11C5/06 ,  H05K1/112 ,  H05K2201/09409 ,  H05K2201/10159 ,  H05K2201/10545 ,  H05K2201/10689 ,  Y02P70/611

摘要： The present invention is directed to a system, a module, and an apparatus and method for forming a microelectronic memory device. In one embodiment, a system includes a processor and a controller coupled to the processor with at least one memory module coupled to the controller, the module including a pair of memory devices oppositely positioned on respective surfaces of a substrate and interconnected by members extending through the substrate that couple terminals of the devices, the terminals being selected to include a group of terminals that are configured to communicate functionally compatible signals.

摘要翻译： 本发明涉及一种用于形成微电子存储器件的系统，模块以及装置和方法。 在一个实施例中，系统包括处理器和耦合到处理器的控制器，其中至少一个存储器模块耦合到控制器，该模块包括一对存储器件，其相对地定位在衬底的相应表面上并且通过延伸穿过 耦合器件的端子的基板，所述端子被选择为包括被配置为传送功能兼容的信号的一组端子。

公开(公告)号：US20050007807A1

公开(公告)日：2005-01-13

申请号：US10910980

申请日：2004-08-03

申请人： Chris Martin ,  Brent Keeth ,  Brian Johnson ,  Walter Moden

发明人： Chris Martin ,  Brent Keeth ,  Brian Johnson ,  Walter Moden

IPC分类号： G11C5/00 ,  H05K1/18 ,  G11C7/00

CPC分类号： H05K1/181 ,  G11C5/04 ,  G11C5/06 ,  H05K1/112 ,  H05K2201/09409 ,  H05K2201/10159 ,  H05K2201/10545 ,  H05K2201/10689 ,  Y02P70/611

摘要： The present invention is directed to a system, a module, and an apparatus and method for forming a microelectronic memory device. In one embodiment, a system includes a processor and a controller coupled to the processor with at least one memory module coupled to the controller, the module including a pair of memory devices oppositely positioned on respective surfaces of a substrate and interconnected by members extending through the substrate that couple terminals of the devices, the terminals being selected to include a group of terminals that are configured to communicate functionally compatible signals.

公开(公告)号：US20050007806A1

公开(公告)日：2005-01-13

申请号：US10910979

申请日：2004-08-03

申请人： Chris Martin ,  Brent Keeth ,  Brian Johnson ,  Walter Moden

发明人： Chris Martin ,  Brent Keeth ,  Brian Johnson ,  Walter Moden

IPC分类号： G11C5/00 ,  H05K1/18 ,  G11C7/00

CPC分类号： H05K1/181 ,  G11C5/04 ,  G11C5/06 ,  H05K1/112 ,  H05K2201/09409 ,  H05K2201/10159 ,  H05K2201/10545 ,  H05K2201/10689 ,  Y02P70/611

摘要： The present invention is directed to a system, a module, and an apparatus and method for forming a microelectronic memory device. In one embodiment, a system includes a processor and a controller coupled to the processor with at least one memory module coupled to the controller, the module including a pair of memory devices oppositely positioned on respective surfaces of a substrate and interconnected by members extending through the substrate that couple terminals of the devices, the terminals being selected to include a group of terminals that are configured to communicate functionally compatible signals.

摘要翻译： 本发明涉及一种用于形成微电子存储器件的系统，模块以及装置和方法。 在一个实施例中，系统包括处理器和耦合到处理器的控制器，其中至少一个存储器模块耦合到控制器，该模块包括一对存储器件，其相对地定位在衬底的相应表面上并且通过延伸穿过 耦合器件的端子的基板，所述端子被选择为包括被配置为传送功能兼容的信号的一组端子。

公开(公告)号：US20050094432A1

公开(公告)日：2005-05-05

申请号：US11001231

申请日：2004-12-01

申请人： Brian Johnson ,  Brent Keeth ,  Jeffery Janzen ,  Troy Manning ,  Chris Martin

发明人： Brian Johnson ,  Brent Keeth ,  Jeffery Janzen ,  Troy Manning ,  Chris Martin

IPC分类号： G01R31/28 ,  G11C7/10 ,  G11C7/22 ,  G11C11/401 ,  G11C11/407 ,  G11C29/14 ,  G11C11/00

CPC分类号： G11C29/12015 ,  G11C7/1078 ,  G11C7/109 ,  G11C7/22 ,  G11C7/222 ,  G11C29/14

摘要： A synchronous semiconductor memory device is operable in a normal mode and an alternative mode. The semiconductor device has a command bus for receiving a plurality of synchronously captured input signals, and a plurality of asynchronous input terminals for receiving a plurality of asynchronous input signals. The device further has a clock input for receiving an external clock signal thereon, with the device being specified by the manufacturer to be operated in the normal mode using an external clock signal having a frequency no less than a predetermined minimum frequency. An internal delay locked loop (DLL) clocking circuit is coupled to the clock input terminal and is responsive in normal operating mode to be responsive to the external clock signal to generate at least one internal clock signal. control circuitry in the device is responsive to a predetermined sequence of asynchronous signals applied to the device's asynchronous input terminals to place the device in an alternative mode of operation in which the internal clocking circuit is disabled, such that the device may be operated in the alternative mode using an external clock signal having a frequency less than the predetermined minimum frequency. The alternative mode of operation facilitates testing of the device at a speed less than the minimum frequency specified for the normal mode of operation.

摘要翻译： 同步半导体存储器件可以在正常模式和替代模式下操作。 半导体器件具有用于接收多个同步捕获的输入信号的命令总线和用于接收多个异步输入信号的多个异步输入端子。 该装置还具有用于在其上接收外部时钟信号的时钟输入，该装置由制造商指定为使用具有不小于预定最小频率的频率的外部时钟信号在正常模式下操作。 内部延迟锁定环（DLL）时钟电路耦合到时钟输入端并且在正常操作模式下响应于外部时钟信号响应以产生至少一个内部时钟信号。 设备中的控制电路响应于施加到设备的异步输入端子的预定的异步信号序列，以将设备置于其中内部时钟电路被禁用的替代操作模式，使得该设备可以以替代方式操作 模式使用具有小于预定最小频率的频率的外部时钟信号。 替代的操作模式便于以低于为正常操作模式指定的最小频率的速度测试设备。

公开(公告)号：US20080089158A1

公开(公告)日：2008-04-17

申请号：US11999383

申请日：2007-12-04

申请人： Brent Keeth ,  Brian Johnson ,  Troy Manning

发明人： Brent Keeth ,  Brian Johnson ,  Troy Manning

IPC分类号： G11C7/00

CPC分类号： G11C7/1072 ,  G11C7/1006 ,  G11C7/1018 ,  G11C7/1027 ,  G11C7/1045 ,  G11C7/1048 ,  G11C7/1051 ,  G11C7/106 ,  G11C7/1066 ,  G11C7/1069 ,  G11C7/1078 ,  G11C11/4093 ,  G11C11/4096 ,  G11C2207/107

摘要： A memory device is operable in either a high mode or a low speed mode. In either mode, 32 bits of data from each of two memory arrays are prefetched into respective sets of 32 flip-flops. In the high-speed mode, the prefetched data bits are transferred in parallel to 4 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 4 data bus terminals. In the low speed mode, two sets of prefetched data bits are transferred in parallel to 8 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 8 data bus terminals.

摘要翻译： 存储器件可以在高模式或低速模式下操作。 在任一模式中，来自两个存储器阵列中的每一个的32位数据被预取到相应的32个触发器组中。 在高速模式下，预取数据位并行传输到4个并行到串行转换器，它们将并行数据位转换为8个串行数据位的脉冲串，并将该脉冲串应用于4个数据总线 终端。 在低速模式下，两组预取数据位并行传送到8个并行到串行转换器，它们将并行数据位转换为8个串行数据位的脉冲串，并将该脉冲串应用于8个数据中的相应一个 巴士总站。

公开(公告)号：US20060045206A1

公开(公告)日：2006-03-02

申请号：US10930543

申请日：2004-08-30

申请人： Brent Keeth ,  Joo Choi ,  George Pax ,  Ronnie Harrison ,  David Ovard ,  Dragos Dimitriu ,  Troy Manning ,  Roy Greeff ,  Greg King ,  Brian Johnson

发明人： Brent Keeth ,  Joo Choi ,  George Pax ,  Ronnie Harrison ,  David Ovard ,  Dragos Dimitriu ,  Troy Manning ,  Roy Greeff ,  Greg King ,  Brian Johnson

IPC分类号： H04L27/06

CPC分类号： H04L25/062

摘要： A method and system for generating a reference voltage for memory device signal receivers operates in either a calibration mode or a normal operating mode. In the calibration mode, the magnitude of the reference voltage is incrementally varied, and a digital signal pattern is coupled to the receiver at each reference voltage. An output of the receiver is analyzed to determine if the receiver can accurately pass the signal pattern at each reference voltage level. A range of reference voltages that allow the receiver to accurately pass the signal pattern is recorded, and a final reference voltage is calculated at the approximate midpoint of the range. This final reference voltage is applied to the receiver during normal operation.

公开(公告)号：US20060044891A1

公开(公告)日：2006-03-02

申请号：US10931472

申请日：2004-08-31

申请人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

发明人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

IPC分类号： G11C7/00

CPC分类号： G11C7/109 ,  G11C7/1006 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/22 ,  G11C7/222

摘要： A memory system couples command, address or write data signals from a memory controller to a memory device and read data signals from the memory device to the memory controller. A respective strobe generator circuit in each of the memory controller and the memory device each generates an in-phase strobe signal and a quadrature strobe signal. Command, address or write data signals stored in respective output latches in the memory controller are clocked by the in-phase signals from the internal strobe generator circuit. These command, address or write data signals are latched into input latches in the memory device by the quadrature strobe signal coupled from the memory controller to the memory device. In substantially the same manner, read data signals are coupled from the memory device to the memory controller using the in-phase and quadrature strobe signals generated by the internal strobe generator circuit.

公开(公告)号：US06930955B2

公开(公告)日：2005-08-16

申请号：US10851081

申请日：2004-05-24

申请人： Brian Johnson ,  Brent Keeth ,  Feng Lin

发明人： Brian Johnson ,  Brent Keeth ,  Feng Lin

IPC分类号： G11C7/10 ,  G11C7/22 ,  G11C8/00 ,  G11C11/4076

CPC分类号： G11C7/222 ,  G11C7/1072 ,  G11C11/4076

摘要： A method and apparatus for managing the variable timing of internal clock signals derived from an external clock signal in order to compensate for uncertainty and variations in the amount of read clock back timing relative to data flow to achieve a specified read latency. A reset signal is generated at DRAM initialization and starts an first counter, which counts external clock cycles, and is also passed through the slave delay line of the delay lock loop to start a second counter. The counters run continuously once started and the difference in count values represent the internal delay as an external clock signal passes through the delay lock loop to produce an internal read clock signal. An internal read latency value is used to offset either counter to account for the internal read latency of the DRAM circuit. Once the non-offset counter is equivalent to the offset counter, read data is placed on an output line with a specified read latency and synchronized with the external read clock.

摘要翻译： 一种用于管理从外部时钟信号导出的内部时钟信号的可变定时的方法和装置，以便补偿相对于数据流的读取时钟反馈时序的不确定性和变化，以实现指定的读取等待时间。 在DRAM初始化时产生复位信号，并启动计数外部时钟周期的第一计数器，并且还通过延迟锁定循环的从延迟线来启动第二个计数器。 一旦启动，计数器连续运行，当外部时钟信号通过延迟锁定环路以产生内部读取时钟信号时，计数值的差异代表内部延迟。 内部读延迟值用于抵消DRAM电路的内部读延迟。 一旦非偏移计数器等效于偏移计数器，读取数据将放置在具有指定读延迟并与外部读时钟同步的输出线上。

公开(公告)号：US06697297B2

公开(公告)日：2004-02-24

申请号：US10230673

申请日：2002-08-29

申请人： Brent Keeth ,  Brian Johnson

发明人： Brent Keeth ,  Brian Johnson

IPC分类号： G11C800

CPC分类号： G11C7/109 ,  G11C7/1072 ,  G11C7/1078 ,  G11C7/22 ,  G11C11/4076 ,  G11C11/409

摘要： A system and memory including a circuit for setting write latency and a write/valid indicator. Time margin regions are established just after the first or leading edge and just before the second or following edge of the preamble of the clock signal such that a latency setting will be found unacceptable if it causes a write enable signal to transition in either of these regions. A write/valid indicator circuit creates the start and end time margin regions by delaying either the clock signal or the write enable signal and comparing their timing with the timing of the undelayed write enable signal or clock signal respectively.

摘要翻译： 包括用于设置写延迟的电路和写/有效指示符的系统和存储器。 时间裕度区域刚好在第一或前沿之后并且恰好在时钟信号的前导码的第二或后沿之后建立，使得等待时间设置将被发现是不可接受的，如果其引起写入使能信号在这些区域中的任一个中转变 。 写入/有效指示电路通过延迟时钟信号或写入使能信号并分别将它们的定时与未延迟写入使能信号或时钟信号的定时进行比较来创建起始和结束时间余量区域。

公开(公告)号：US06683814B2

公开(公告)日：2004-01-27

申请号：US10278553

申请日：2002-10-22

申请人： Brent Keeth ,  Brian Johnson ,  Troy A. Manning

发明人： Brent Keeth ,  Brian Johnson ,  Troy A. Manning

IPC分类号： G11C700

CPC分类号： G11C7/1072 ,  G11C7/1006 ,  G11C7/1018 ,  G11C7/1027 ,  G11C7/1045 ,  G11C7/1048 ,  G11C7/1051 ,  G11C7/106 ,  G11C7/1066 ,  G11C7/1069 ,  G11C7/1078 ,  G11C11/4093 ,  G11C11/4096 ,  G11C2207/107

摘要： A memory device is operable in either a high mode or a low speed mode. In either mode, 32 bits of data from each of two memory arrays are prefetched into respective sets of 32 flip-flops. In the high-speed mode, the prefetched data bits are transferred in parallel to 4 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 4 data bus terminals. In the low speed mode, two sets of prefetched data bits are transferred in parallel to 8 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 8 data bus terminals.