公开(公告)号：US20240209506A1

公开(公告)日：2024-06-27

申请号：US18540311

申请日：2023-12-14

Applicant: Applied Materials, Inc.

Inventor： Sanjeev Baluja ,  Muhannad Mustafa

IPC: C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45589 ,  C23C16/52

Abstract: Gas distribution assemblies comprising a backing plate, a first enclosure with an outer diameter smaller than an outer diameter of an opening in the center of the backing plate. A top plate is connected to the top of the first enclosure. A compressible seal surrounds the first enclosure connecting the top plate to the backing plate outside the opening in the backing plate. An actuator is connected to the backing plate and the top plate to move the top plate closer to and further from the backing plate. A plunger extends through the opening in the center of the first enclosure. Methods of controlling a flow profile are also disclosed.

公开(公告)号：US20240096688A1

公开(公告)日：2024-03-21

申请号：US18523394

申请日：2023-11-29

Applicant: Applied Materials, Inc.

Inventor： Michael Robert Rice ,  Joseph AuBuchon ,  Sanjeev Baluja ,  Mandyam Sriram

IPC: H01L21/687 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/68785 ,  C23C16/4409 ,  C23C16/45525 ,  C23C16/4584 ,  C23C16/46 ,  H01L21/67103 ,  H01L21/6719 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68764 ,  H01L21/68771

Abstract: Apparatus and methods to process one or more wafers are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition.

公开(公告)号：US11923172B2

公开(公告)日：2024-03-05

申请号：US17666906

申请日：2022-02-08

Applicant: Applied Materials, Inc.

Inventor： Hari Ponnekanti ,  Tsutomu Tanaka ,  Mandyam Sriram ,  Dmitry A. Dzilno ,  Sanjeev Baluja ,  Mario D. Silvetti

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01J37/32091 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/46 ,  H01J37/32568 ,  H01J37/32715 ,  H01L21/0262 ,  H01L21/306

Abstract: Processing chambers with a plurality of processing stations and individual wafer support surfaces are described. The processing stations and wafer support surfaces are arranged so that there is an equal number of processing stations and heaters. An RF generator is connected to a first electrode in a first station and a second electrode in a second station. A bottom RF path is formed by a connection between a first support surface and a second support surface.

公开(公告)号：US20230407981A1

公开(公告)日：2023-12-21

申请号：US18212238

申请日：2023-06-21

Applicant: Applied Materials, Inc.

Inventor： Muhannad Mustafa ,  Sanjeev Baluja

IPC: F16K15/02

CPC classification number: F16K15/028

Abstract: Variable orifice check valves comprising a flange with a guide pin, spring and movable plate are described. The flange has a body with at least one guide pin opening in the top surface. A guide pin is positioned within the at least one guide pin opening and a spring is positioned around the guide pin. The movable plate has an opening and slides along the guide pins with the spring between the top surface of the flange body and the bottom surface of the movable plate.

公开(公告)号：US11818810B2

公开(公告)日：2023-11-14

申请号：US17214340

申请日：2021-03-26

Applicant: Applied Materials, Inc.

Inventor： Dhritiman Subha Kashyap ,  Amit Rajendra Sherekar ,  Kartik Shah ,  Ashutosh Agarwal ,  Eric J. Hoffmann ,  Sanjeev Baluja ,  Vijay D. Parkhe

IPC: H05B1/02 ,  H01L21/67

CPC classification number: H05B1/0233 ,  H01L21/67103

Abstract: A heater assembly having a backside purge gap formed between a top plate and a heater of the heater assembly, the top plate having a top plate wall. The top plate wall having an upper portion, a middle portion and a lower portion, the middle portion forming an incline relative to the top portion.

公开(公告)号：US11713508B2

公开(公告)日：2023-08-01

申请号：US17845191

申请日：2022-06-21

Applicant: Applied Materials, Inc.

Inventor： Kevin Griffin ,  Sanjeev Baluja ,  Joseph AuBuchon ,  Mario D. Silvetti ,  Hari Ponnekanti

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01J37/32

CPC classification number: C23C16/45565 ,  C23C16/458 ,  C23C16/45544 ,  C23C16/45589 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32431 ,  H01J37/32449

Abstract: Processing chambers and methods to disrupt the boundary layer are described. The processing chamber includes a showerhead and a substrate support therein. The showerhead and the substrate support are spaced to have a process gap between them. In use, a boundary layer is formed adjacent to the substrate support or wafer surface. As the reaction occurs at the wafer surface, reaction products and byproduct are produced, resulting in reduced chemical utilization rate. The processing chamber and methods described disrupt the boundary layer by changing one or more process parameters (e.g., pressure, flow rate, time, process gap or temperature of fluid passing through the showerhead).

公开(公告)号：US20230146837A1

公开(公告)日：2023-05-11

申请号：US17522629

申请日：2021-11-09

Applicant: Applied Materials, Inc.

Inventor： Muhannad Mustafa ,  Mario D. Silvetti ,  Mandyam Sriram ,  Sanjeev Baluja

IPC: C23C16/46 ,  F28F3/12 ,  F28F21/08

CPC classification number: C23C16/46 ,  F28F3/12 ,  F28F21/083 ,  F28F21/084 ,  F28F2225/00

Abstract: Pedestal heater radiators, pedestal assemblies including the pedestal heater radiators and methods of decreasing deposition non-uniformity are described. The pedestal heater radiator has a first radiator body and a second radiator body with different emissivities. The first radiator body and second radiator body are sized and positioned to decrease the heat loss differential between sides of the pedestal.

公开(公告)号：US11602064B2

公开(公告)日：2023-03-07

申请号：US17009652

申请日：2020-09-01

Applicant: Applied Materials, Inc.

Inventor： Akshay Gunaji ,  Uday Pai ,  Timothy J. Roggenbuck ,  Sanjeev Baluja ,  Kalesh Panchaxari Karadi ,  Tejas Ulavi

IPC: H05K5/02 ,  C23C16/455 ,  H02G3/04 ,  C23C16/458

Abstract: Process assemblies and cable management assemblies for managing cables in tight envelopes. A processing assembly includes a top chamber having at least one substrate support, a support shaft, a robot spindle assembly, a stator and a cable management system. The cable management system includes an inner trough assembly and an outer trough assembly configured to move relative to one another, and a plurality of chain links configured to house at least one cable for delivering power to the process assembly.

公开(公告)号：US11584993B2

公开(公告)日：2023-02-21

申请号：US17074035

申请日：2020-10-19

Applicant: Applied Materials, Inc.

Inventor： Jared Ahmad Lee ,  Sanjeev Baluja ,  Joseph AuBuchon ,  Kenneth Brian Doering ,  Dhritiman Subha Kashyap ,  Kartik Shah

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/44

Abstract: Gas distribution assemblies and methods for providing a flow of gases to a process station are described. The gas distribution assemblies comprise a pumping liner with a showerhead and a gas funnel positioned therein. The pumping liner has an inner wall that slants at a first angle relative to a central axis of the gas distribution assembly so that the inner wall adjacent the bottom wall of the pumping liner is closer to the central axis than the inner wall adjacent the top wall. The gas funnel and pumping liner form a plenum between the outer wall of the gas funnel, a cavity in the bottom wall of the gas funnel and the inner wall of the pumping liner.

公开(公告)号：US11479855B2

公开(公告)日：2022-10-25

申请号：US17002409

申请日：2020-08-25

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Dhritiman Subha Kashyap ,  Jared Ahmad Lee ,  Tejas Ulavi ,  Michael Rice

IPC: C23C16/455 ,  C23C16/458 ,  H01L21/67 ,  H01L21/687 ,  C23C16/46 ,  H01L21/02

Abstract: Apparatus and methods to process one or more wafers are described. A processing chamber comprises a first processing station comprising a first gas injector having a first face, a first emissivity and a first temperature, a second processing station comprising a second gas injector having a second face, a second emissivity and a second temperature, and a substrate support assembly comprising a plurality of substantially coplanar support surfaces, the substrate support assembly configured to move the support surfaces between the first processing station and the second processing station. When a wafer is on the support surfaces, a temperature skew of less than about 0.5° C. is developed upon moving the wafer between the stations in about 0.5 seconds.