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92 条记录 (耗时 0.05 秒)

    Multiple wavelength, surface emitting laser with broad bandwidth distributed Bragg reflectors
    81.
    发明授权
    Multiple wavelength, surface emitting laser with broad bandwidth distributed Bragg reflectors 失效
    多波长，表面发射激光器，宽带分布布拉格反射器

    公开(公告)号：US5699375A

    公开(公告)日：1997-12-16

    申请号：US676751

    申请日：1996-07-08

    申请人： Thomas L. Paoli

    发明人： Thomas L. Paoli

    IPC分类号： H01S5/00 ,  H01S5/026 ,  H01S5/10 ,  H01S5/183 ,  H01S5/34 ,  H01S5/40 ,  H01S5/42 ,  H01S3/19 ,  H01S3/08 ,  H01S3/10

    CPC分类号： B82Y20/00 ,  H01S5/423 ,  H01S5/026 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/2063 ,  H01S5/3414 ,  H01S5/4087

    摘要： A multiple wavelength surface emitting laser has a first and second broad bandwidth distributed Bragg reflector (DBR) which reflect light at multiple wavelengths. The surface emitting laser structure comprises at least two cavities with each cavity containing one or more active layers for respectively emitting light at different wavelengths. In a preferred embodiment for a dual wavelength surface emitting laser, a first cavity contains a first active layer for emitting light of a first wavelength and a second cavity contains only a second active layers and emits only light of the second longer wavelength. The second layer has been eliminated in the first cavity and the first active layer has been eliminated in the second cavity by layer intermixing before completing the epitaxial growth.

    摘要翻译： 多波长表面发射激光器具有反射多个波长的光的第一和第二宽带分布布拉格反射器（DBR）。 表面发射激光器结构包括至少两个空腔，每个空腔包含用于分别发射不同波长的光的一个或多个有源层。 在双波长表面发射激光器的优选实施例中，第一腔包含用于发射第一波长的光的第一有源层，而第二腔仅包含第二有源层，并且仅发射第二较长波长的光。 在完成外延生长之前，第二层已经在第一腔中消除，并且第一有源层已经在第二空腔中通过层混合消除。

    Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material
    82.
    发明授权
    Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material 失效
    掺杂p型和n型杂质的半导体器件诱导层无序材料

    公开(公告)号：US5608753A

    公开(公告)日：1997-03-04

    申请号：US496752

    申请日：1995-06-29

    申请人： Thomas L. Paoli ,  John E. Northrup

    发明人： Thomas L. Paoli ,  John E. Northrup

    IPC分类号： H01L25/16 ,  H01S5/026 ,  H01S5/042 ,  H01S5/183 ,  H01S5/20 ,  H01S5/30 ,  H01S5/32 ,  H01S3/18 ,  H01L31/12

    CPC分类号： H01S5/18308 ,  H01L25/167 ,  H01S5/0261 ,  H01L2924/0002 ,  H01S5/0424 ,  H01S5/2059 ,  H01S5/305 ,  H01S5/3206 ,  H01S5/423

    摘要： Novel semiconductor devices are monolithically defined with p-type and n-type wide bandgap material formed by impurity induced layer disordering of selected regions of multiple semiconductor layers. The devices are beneficially fabricated by simultaneously forming the n-type and p-type layer disordered regions with sufficiently abrupt transitions from disordered to as-grown material. The novel devices include a heterojunction bipolar transistor monolithically integrated with an edge emitting heterostructure laser or a surface emitting laser, a heterostructure surface emitting laser, a heterostructure surface emitting laser having active distributed feedback, devices containing multiple buried layers which are individually contacted such as p-n junction surface emitting lasers, carrier channeling devices, and "n-i-p-i" or hetero "n-i-p-i" devices, and novel interdigitated structures, such as optical detectors and distributed feedback lasers.

    摘要翻译： 新型的半导体器件通过由多个半导体层的选定区域的杂质诱导层失调而形成的p型和n型宽带隙材料单片地限定。 这些器件有利地通过同时形成具有从无序到原始材料的足够突变的n型和p型层无序区域而被制造。 新型器件包括与边缘发射异质结构激光器或表面发射激光器，异质结构表面发射激光器，具有有源分布反馈的异质结构表面发射激光器单元集成的异质结双极晶体管，包含单独接触的多个掩埋层的器件，例如pn 结面发射激光器，载流子引导装置以及“nipi”或异质“nipi”装置，以及诸如光学检测器和分布式反馈激光器之类的新颖的叉指结构。

    Monolithic array of independently addressable diode lasers
    83.
    发明授权
    Monolithic array of independently addressable diode lasers 失效
    独立可寻址二极管激光器的单片阵列

    公开(公告)号：US5497391A

    公开(公告)日：1996-03-05

    申请号：US308877

    申请日：1994-09-19

    申请人： Thomas L. Paoli

    发明人： Thomas L. Paoli

    IPC分类号： H01S3/23 ,  H01S5/00 ,  H01S5/026 ,  H01S5/042 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/34 ,  H01S5/40 ,  H01S3/18 ,  H01S3/25

    CPC分类号： B82Y20/00 ,  H01S5/4031 ,  H01S5/2059 ,  H01S5/2063 ,  H01S5/2213 ,  H01S5/2216 ,  H01S5/2231 ,  H01S5/3413

    摘要： A monolithic array of two or more independently addressable, closely spaced diode lasers having low thermal, electrical, and optical crosstalk. An isolation region is formed between the adjacent laser elements, which are defined by rib loaded waveguides created by etching mesas above a planar active multilayer waveguide. Separate electrical connections to the ribs, and a common electrical connection to the substrate, enable individual addressing of each laser element. Selectively added blocking layers and/or insulating layers are added to the structure to provide improved electrical and/or thermal isolation.

    摘要翻译： 具有低热，电和光串扰的两个或更多个独立可寻址的紧密间隔的二极管激光器的单片阵列。 在相邻的激光元件之间形成隔离区域，这些激光元件由通过在平面有源多层波导上方蚀刻台面而产生的肋加载波导限定。 与肋条分开的电气连接以及与基板的公共电气连接可实现每个激光元件的单独寻址。 将选择性地添加的阻挡层和/或绝缘层添加到该结构中以提供改进的电和/或热隔离。

    Semiconductor laser with integrated phototransistor for dynamic power stabilization
    85.
    发明授权
    Semiconductor laser with integrated phototransistor for dynamic power stabilization 失效
    具有集成光电晶体管的半导体激光器，用于动态功率稳定

    公开(公告)号：US5323026A

    公开(公告)日：1994-06-21

    申请号：US924204

    申请日：1992-08-03

    申请人： Thomas L. Paoli

    发明人： Thomas L. Paoli

    IPC分类号： H01L31/10 ,  H01L31/12 ,  H01S5/00 ,  H01S5/026 ,  H01S5/068 ,  H01S5/125 ,  H01S5/40

    CPC分类号： H01S5/0264 ,  H01S5/06808 ,  H01S5/125 ,  H01S5/4031

    摘要： A diode laser of the buried heterostructure type with transverse injection and a lateral bipolar transistor structure are monolithically and coaxially formed in the same set of semiconductor layers to make an integral laser device that emits a constant level of optical power stabilized against unpredictable variations. The base region of the transistor structure is formed coaxially with the laser waveguide, so that laser power passes into or through the transistor base. Electrical feedback is provided from the transistor to the laser via a resistor between the collector of the transistor and the anode of the laser, thereby controlling the current delivered by an external current source to the laser.

    摘要翻译： 具有横向注入和横向双极晶体管结构的埋入异质结构类型的二极管激光器在同一组半导体层中单片同轴地形成，以形成一体化的激光器件，该激光器器件发射稳定的光功率水平以防止不可预知的变化。 晶体管结构的基极区域与激光波导同轴地形成，使得激光功率进入或通过晶体管基极。 通过晶体管的集电极和激光器的阳极之间的电阻器从晶体管到激光器提供电反馈，从而将由外部电流源传递的电流控制到激光器。

    Array and method of operating a modulated solid state laser array with reduced thermal crosstalk
    87.
    发明授权
    Array and method of operating a modulated solid state laser array with reduced thermal crosstalk 失效
    操作具有降低的热串扰的调制固态激光器阵列的阵列和方法

    公开(公告)号：US5267255A

    公开(公告)日：1993-11-30

    申请号：US841399

    申请日：1992-02-25

    申请人： Thomas L. Paoli

    发明人： Thomas L. Paoli

    IPC分类号： H01S5/00 ,  H01S5/026 ,  H01S5/0625 ,  H01S5/40 ,  H01S3/19

    CPC分类号： H01S5/4031 ,  H01S5/0625 ,  H01S5/0265

    摘要： Modulation-induced thermal crosstalk between the independently addressable lasers of a monolithic multilaser array is reduced or eliminated by forming each laser with two optically coupled active regions, an amplifier region and a modulator region. Modulation of the laser output is achieved by varying the internal optical loss of the modulator region, known as Q-switching. In one form, control of this loss is achieved by varying the reverse bias voltage applied to the modulation region. In another form, control of this loss is achieved by selectively connecting and disconnecting regions of p-type and n-type material in the modulator region together. In a third form, control of this loss is achieved by selectively connecting and disconnecting the modulator region to ground potential. In a fourth form, control of this loss is achieved by increasing the amplifier current to allow lasing and simultaneously offset any thermal effects produced by the increased optical power emitted. Q-switched operation of laser results in a cooling of the laser during operation. Increasing the bias applied to the amplifier region results in heating of the laser during operation. Parameters for Q-switching and biasing the amplifier region are selected such that cooling of the laser attributed to Q-switched operation is approximately equally offset by heating attributed to increasing the bias applied to the amplifier region.

    Method of controlling slow scan direction of spot position in an optical output device employing an electro-optical control apparatus
    88.
    发明授权
    Method of controlling slow scan direction of spot position in an optical output device employing an electro-optical control apparatus 失效
    在采用电光控制装置的光输出装置中控制光点位置的慢扫描方向的方法

    公开(公告)号：US5212381A

    公开(公告)日：1993-05-18

    申请号：US747176

    申请日：1991-08-19

    申请人： James J. Appel ,  Thomas L. Paoli

    发明人： James J. Appel ,  Thomas L. Paoli

    IPC分类号： G02B26/10 ,  G02B5/04 ,  G02B26/12 ,  G02B27/00 ,  G02F1/29 ,  H04N1/047 ,  H04N1/113 ,  H04N1/12

    CPC分类号： G02B27/0031 ,  G02B5/04 ,  H04N1/0473 ,  H04N1/1135 ,  H04N1/12 ,  H04N2201/0471 ,  H04N2201/04763

    摘要： A method of slow, or process, scan direction spot registration or position control in an optical output device, such as a raster output scanner (ROS), may be facilitated by interposing in the image path an electro-optic element whose angular dispersion varies for a given wavelength as a function of the electrical bias applied to it. By orienting the electro-optic element such that dispersion control is perpendicular to the fast or line scan direction of the ROS, varying the electrical bias applied to it varies the dispersion in the slow scan direction. The electro-optic element may be, for example, a prism of AlGaAs. Bias applied to the electro-optic element may be in response to the output of a means for detecting and quantifying such positional errors and/or in response to predetermined correction information output from a processor controlled memory unit or the like. Spot position for single or multiple beam optical output device may be achieved.

    摘要翻译： 在诸如光栅输出扫描器（ROS）的光学输出装置中，缓慢或处理扫描方向点对位或位置控制的方法可以通过将影像路径中的角度色散变化的电光元件插入到 给定波长作为施加到其上的电偏压的函数。 通过使电光元件定向使得色散控制垂直于ROS的快速或线扫描方向，改变施加到其上的电偏压改变慢扫描方向上的色散。 电光元件可以是例如AlGaAs的棱镜。 应用于电光元件的偏压可以响应于用于检测和量化这种位置误差的装置的输出和/或响应于从处理器控制的存储器单元等输出的预定校正信息。 可以实现单光束或多光束光输出装置的光点位置。