公开(公告)号：US5376583A

公开(公告)日：1994-12-27

申请号：US174911

申请日：1993-12-29

申请人： John E. Northrup ,  Thomas L. Paoli

发明人： John E. Northrup ,  Thomas L. Paoli

IPC分类号： H01L21/22 ,  H01L21/18 ,  H01L21/331 ,  H01S5/042 ,  H01S5/20 ,  H01S5/343 ,  H01L21/20

CPC分类号： B82Y20/00 ,  H01L21/182 ,  H01L29/66318 ,  H01S5/20 ,  H01S5/0424 ,  H01S5/2059 ,  H01S5/3432

摘要： P-type impurity induced layer disordering (IILD) in compound semiconductor structures or multilayer semiconductor material structures is produced by providing a source of a disordering agent during annealing multiple layers of III-V semiconductor material at high temperature under Group III material-rich conditions. For example, diffusion of silicon causes impurity induced layer disordering of GaAs/AlGaAs quantum well structures. By diffusing the silicon under gallium-rich conditions or from a gallium-rich source layer, the desired disordering is achieved simultaneously with p-type doped material. Silicon is an amphoteric dopant in gallium arsenide. Silicon occupies the gallium and arsenic sites with comparable frequencies with predominantly occupied site determined by the arsenic and gallium chemical potentials. Diffusion of silicon causes impurity induced layer disordering (IILD) of GaAs/AlGaAs quantum well structures. In this method, silicon is used to produce layer disordering in GaAs/AlGaAs heterostructures. The heterostructure material doped with silicon is annealed under extreme gallium-rich conditions or under a gallium-rich source layer to achieve the desired disordering simultaneously p-type doped material.

摘要翻译： 化合物半导体结构或多层半导体材料结构中的P型杂质诱导层无序（IILD）通过在III族材料富集条件下在高温退火多层III-V半导体材料期间提供无序剂源而产生。 例如，硅的扩散导致GaAs / AlGaAs量子阱结构的杂质诱导层失调。 通过在富镓条件下或从富镓源层扩散硅，与p型掺杂材料同时实现所需的无序性。 硅是砷化镓中的两性掺杂剂。 硅占据砷和砷的位置，具有相当的频率，占主导地位由砷和镓化学势确定。 硅的扩散导致GaAs / AlGaAs量子阱结构的杂质诱导层失调（IILD）。 在这种方法中，硅用于在GaAs / AlGaAs异质结构中产生层紊乱。 掺杂硅的异质结构材料在极富镓条件下或在富镓源层下进行退火，以实现所需的无序同时p型掺杂材料。

公开(公告)号：US5455429A

公开(公告)日：1995-10-03

申请号：US174912

申请日：1993-12-29

申请人： Thomas L. Paoli ,  John E. Northrup

发明人： Thomas L. Paoli ,  John E. Northrup

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L27/06 ,  H01L27/15 ,  H01L29/205 ,  H01L29/737 ,  H01S5/00 ,  H01S5/026 ,  H01S5/042 ,  H01S5/12 ,  H01S5/183 ,  H01S5/20 ,  H01L33/00 ,  H01L29/161 ,  H01L29/167

CPC分类号： H01S5/0424 ,  H01L27/0605 ,  H01L27/15 ,  H01S5/0261 ,  H01S5/0425 ,  H01S5/1228 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/2063

摘要： Novel semiconductor devices are monolithically defined with p-type and n-type wide bandgap material formed by impurity induced layer disordering of selected regions of multiple semiconductor layers. The devices are beneficially fabricated by simultaneously forming the n-type and p-type layer disordered regions with sufficiently abrupt transitions from disordered to as-grown material. The novel devices include a heterojunction bipolar transistor monolithically integrated with an edge emitting heterostructure laser or a surface emitting laser, a heterostructure surface emitting laser, a heterostructure surface emitting laser having active distributed feedback, devices containing multiple buried layers which are individually contacted such as p-n junction surface emitting lasers, carrier channeling devices, and "n-i-p-i" or hetero "n-i-p-i" devices, and novel interdigitated structures, such as optical detectors and distributed feedback lasers.

摘要翻译： 新型的半导体器件通过由多个半导体层的选定区域的杂质诱导层失调而形成的p型和n型宽带隙材料单片地限定。 这些器件有利地通过同时形成具有从无序到原始材料的足够突变的n型和p型层无序区域而被制造。 新型器件包括与边缘发射异质结构激光器或表面发射激光器，异质结构表面发射激光器，具有有源分布反馈的异质结构表面发射激光器单元集成的异质结双极晶体管，包含单独接触的多个掩埋层的器件，例如pn 结面发射激光器，载流子引导装置以及“nipi”或异质“nipi”装置，以及诸如光学检测器和分布式反馈激光器之类的新颖的叉指结构。

公开(公告)号：US5608753A

公开(公告)日：1997-03-04

申请号：US496752

申请日：1995-06-29

申请人： Thomas L. Paoli ,  John E. Northrup

发明人： Thomas L. Paoli ,  John E. Northrup

IPC分类号： H01L25/16 ,  H01S5/026 ,  H01S5/042 ,  H01S5/183 ,  H01S5/20 ,  H01S5/30 ,  H01S5/32 ,  H01S3/18 ,  H01L31/12

CPC分类号： H01S5/18308 ,  H01L25/167 ,  H01S5/0261 ,  H01L2924/0002 ,  H01S5/0424 ,  H01S5/2059 ,  H01S5/305 ,  H01S5/3206 ,  H01S5/423

摘要： Novel semiconductor devices are monolithically defined with p-type and n-type wide bandgap material formed by impurity induced layer disordering of selected regions of multiple semiconductor layers. The devices are beneficially fabricated by simultaneously forming the n-type and p-type layer disordered regions with sufficiently abrupt transitions from disordered to as-grown material. The novel devices include a heterojunction bipolar transistor monolithically integrated with an edge emitting heterostructure laser or a surface emitting laser, a heterostructure surface emitting laser, a heterostructure surface emitting laser having active distributed feedback, devices containing multiple buried layers which are individually contacted such as p-n junction surface emitting lasers, carrier channeling devices, and "n-i-p-i" or hetero "n-i-p-i" devices, and novel interdigitated structures, such as optical detectors and distributed feedback lasers.

摘要翻译： 新型的半导体器件通过由多个半导体层的选定区域的杂质诱导层失调而形成的p型和n型宽带隙材料单片地限定。 这些器件有利地通过同时形成具有从无序到原始材料的足够突变的n型和p型层无序区域而被制造。 新型器件包括与边缘发射异质结构激光器或表面发射激光器，异质结构表面发射激光器，具有有源分布反馈的异质结构表面发射激光器单元集成的异质结双极晶体管，包含单独接触的多个掩埋层的器件，例如pn 结面发射激光器，载流子引导装置以及“nipi”或异质“nipi”装置，以及诸如光学检测器和分布式反馈激光器之类的新颖的叉指结构。

公开(公告)号：US5574745A

公开(公告)日：1996-11-12

申请号：US496753

申请日：1995-06-29

申请人： Thomas L. Paoli ,  John E. Northrup

发明人： Thomas L. Paoli ,  John E. Northrup

IPC分类号： H01S5/026 ,  H01S5/042 ,  H01S5/12 ,  H01S5/183 ,  H01S5/20 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/0261 ,  H01S5/0424 ,  H01S5/18308 ,  H01S5/12 ,  H01S5/18341 ,  H01S5/2059 ,  H01S5/3413 ,  H01S5/3414 ,  H01S5/3432 ,  H01S5/423

摘要： Novel semiconductor devices are monolithically defined with p-type and n-type wide bandgap material formed by impurity induced layer disordering of selected regions of multiple semiconductor layers. The devices are beneficially fabricated by simultaneously forming the n-type and p-type layer disordered regions with sufficiently abrupt transitions from disordered to as-grown material. The novel devices include a heterojunction bipolar transistor monolithically integrated with an edge emitting heterostructure laser or a surface emitting laser, a heterostructure surface emitting laser, a heterostructure surface emitting laser having active distributed feedback, devices containing multiple buried layers which are individually contacted such as p-n junction surface emitting lasers, carrier channeling devices, and "n-i-p-i" or hetero "n-i-p-i" devices, and novel interdigitated structures, such as optical detectors and distributed feedback lasers.

摘要翻译： 新型的半导体器件通过由多个半导体层的选定区域的杂质诱导层失调而形成的p型和n型宽带隙材料单片地限定。 这些器件有利地通过同时形成具有从无序到原始材料的足够突变的n型和p型层无序区域而被制造。 新型器件包括与边缘发射异质结构激光器或表面发射激光器，异质结构表面发射激光器，具有有源分布反馈的异质结构表面发射激光器单体集成的异质结双极晶体管，包含单独接触的多个掩埋层的器件，例如pn 结面发射激光器，载流子引导装置以及“nipi”或异质“nipi”装置，以及诸如光学检测器和分布式反馈激光器之类的新颖的叉指结构。

公开(公告)号：US09252329B2

公开(公告)日：2016-02-02

申请号：US13328783

申请日：2011-12-16

申请人： John E. Northrup ,  Christopher Chua ,  Michael Kneissl ,  Thomas Wunderer ,  Noble M. Johnson

发明人： John E. Northrup ,  Christopher Chua ,  Michael Kneissl ,  Thomas Wunderer ,  Noble M. Johnson

IPC分类号： H01L33/32

CPC分类号： H01L33/0025 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/32

摘要： Light emitting devices having an enhanced degree of polarization, PD, and methods for fabricating such devices are described. A light emitting device may include a light emitting region that is configured to emit light having a central wavelength, λ, and a degree of polarization, PD, where PD>0.006λ−b for 200 nm≦λ≦400 nm, wherein b≦1.5.

摘要翻译： 描述了具有增强的极化度PD的发光器件和用于制造这种器件的方法。 发光器件可以包括被配置为发射具有中心波长λ和极化度PD的光的发光区域，其中PD>0.006λ-b对于200nm和nlE;λ＆nlE; 400nm，其中b＆nlE; 1.5。

公开(公告)号：US06437374B1

公开(公告)日：2002-08-20

申请号：US09849227

申请日：2001-05-07

申请人： John E. Northrup ,  Christian G. Van de Walle

发明人： John E. Northrup ,  Christian G. Van de Walle

IPC分类号： H01L29861

CPC分类号： H01L33/305 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01S5/305

摘要： A semiconductor device includes group III-V layers formed over a substrate. At least one of the group III-V layers is doped with a dopant. The dopant includes a first dopant and one of a second dopant and an isovalent impurity. The first dopant has a covalent radius different in size than the covalent radii of each of the second dopant and the isovalent impurity.

公开(公告)号：US08430705B1

公开(公告)日：2013-04-30

申请号：US13291593

申请日：2011-11-08

申请人： Sanjiv Sambandan ,  John E. Northrup ,  Gregory L. Whiting ,  Robert A. Street

发明人： Sanjiv Sambandan ,  John E. Northrup ,  Gregory L. Whiting ,  Robert A. Street

IPC分类号： H01J1/62 ,  H01J63/04 ,  H01J9/00

CPC分类号： H01J9/025 ,  H01J2329/0415

摘要： A first side has a first surface on which is located a material, at least a portion of which is to be formed into at least one tip. A second side has a second surface which is heated. At least one of the first and second surfaces being moved so material located on the first surface comes into physical contact with the second surface. Then at least one of the first side and the second side are moved, wherein the physical contact between the material and the second surface is maintained, causing the material to stretch between the second surface and the first surface, generating at least one capillary bridge. Movement is continued until the physical contact between the material and the second surface is broken resulting in the formation of at least one sharp conductive tip.

摘要翻译： 第一侧面具有第一表面，其上定位有材料，其至少一部分将形成至少一个尖端。 第二面具有被加热的第二表面。 第一和第二表面中的至少一个被移动，使得位于第一表面上的材料与第二表面物理接触。 然后移动第一侧面和第二侧面中的至少一个，其中保持材料和第二表面之间的物理接触，使材料在第二表面和第一表面之间拉伸，产生至少一个毛细管桥。 继续移动，直到材料和第二表面之间的物理接触被破坏，从而形成至少一个尖锐的导电尖端。

公开(公告)号：US08330144B2

公开(公告)日：2012-12-11

申请号：US13550504

申请日：2012-07-16

申请人： Andre Strittmatter ,  Noble M. Johnson ,  Mark Teepe ,  Christopher L. Chua ,  Zhihong Yang ,  John E. Northrup

发明人： Andre Strittmatter ,  Noble M. Johnson ,  Mark Teepe ,  Christopher L. Chua ,  Zhihong Yang ,  John E. Northrup

IPC分类号： H01L21/00

CPC分类号： H01L21/0262 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/16 ,  H01S5/3202 ,  H01S5/34306 ,  H01S2304/12

摘要： A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer.

摘要翻译： 其结构和制造方法提供了在非c面取向（例如，半极性）模板或衬底上的外延形成的氮化物层中具有抑制的晶格缺陷的固态发光器件。 具有窗口或沟槽的电介质层在生长期间提供对所有对角线运行的缺陷的显着抑制。 适当高度和间距的柱可进一步抑制垂直运行的缺陷。 在电介质层上形成包含氮化镓的层，并且被抛光以提供具有期望粗糙度的平面生长表面。 采用三层氮化铟镓活性区。 对于激光二极管实施例，在氮化镓层上方设置相对厚的氮化镓铝覆层。

公开(公告)号：US08247249B2

公开(公告)日：2012-08-21

申请号：US12791552

申请日：2010-06-01

申请人： Andre Strittmatter ,  Noble M. Johnson ,  Mark Teepe ,  Christopher L. Chua ,  Zhihong Yang ,  John E. Northrup

发明人： Andre Strittmatter ,  Noble M. Johnson ,  Mark Teepe ,  Christopher L. Chua ,  Zhihong Yang ,  John E. Northrup

IPC分类号： H01L21/00

CPC分类号： H01L21/0262 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/16 ,  H01S5/3202 ,  H01S5/34306 ,  H01S2304/12

摘要： A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer.

摘要翻译： 其结构和制造方法提供了在非c面取向（例如，半极性）模板或衬底上的外延形成的氮化物层中具有抑制的晶格缺陷的固态发光器件。 具有“窗口”开口或沟槽的电介质层在生长期间提供对所有对角线运行的缺陷的显着抑制。 适当高度和间距的柱可进一步抑制垂直运行的缺陷。 在电介质层上形成包含氮化镓的层，并且被抛光以提供具有期望粗糙度的平面生长表面。 采用三层氮化铟镓活性区。 对于激光二极管实施例，在氮化镓层上方设置相对厚的氮化镓铝覆层。

公开(公告)号：US08048703B2

公开(公告)日：2011-11-01

申请号：US12756159

申请日：2010-04-07

申请人： Christopher L. Chua ,  Zhihong Yang ,  John E. Northrup ,  Noble Marshall Johnson

发明人： Christopher L. Chua ,  Zhihong Yang ,  John E. Northrup ,  Noble Marshall Johnson

IPC分类号： H01L21/20

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/34333

摘要： A method of fabricating a light emitting device includes modulating a crystal growth parameter to grow a quantum well layer that is inhomogeneous and that has a non-random composition fluctuation across the quantum well layer.

摘要翻译： 制造发光器件的方法包括调制晶体生长参数以生长不均匀的量子阱层，并且跨越量子阱层具有非随机组成波动。