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81.发明申请公开(公告)号：US20170247244A1
公开(公告)日：2017-08-31
申请号：US15054299
申请日：2016-02-26
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe
CPC classification number: B81B3/0021 , B81B7/0048 , B81B2201/0257 , B81B2203/0118 , B81B2203/0127 , B81B2203/04 , B81B2207/012 , B81C1/00325
Abstract: A microelectromechanical system and a method for manufacturing a microelectromechanical system including: a substrate; a microelectromechanical device including: a diaphragm configured as a transducer to convert between electrical energy and mechanical energy and an electrode coupled to the diaphragm; a support region mechanically coupling the microelectromechanical device to the substrate, wherein the support region is confined to a first continuous region spanning an arc of less than 90 degrees around a perimeter of the diaphragm; and a second continuous region free from mechanical support of the microelectromechanical device to the substrate, the second continuous region spanning the perimeter of the diaphragm from one end of the support region to the other end of the support region; wherein the support region cantilevers the microelectromechanical device and the second continuous region mechanically decouples the microelectromechanical device from the substrate.
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公开(公告)号：US20170243793A1
公开(公告)日：2017-08-24
申请号：US15589594
申请日：2017-05-08
Applicant: Infineon Technologies AG
Inventor： Christoph Glacer , Alfons Dehe , John Brueckner
IPC: H01L21/66 , G01N3/08 , B81C99/00 , H01L21/02 , H01L21/3205
CPC classification number: H01L22/12 , B81C99/004 , G01N3/02 , G01N3/08 , G01N2203/0017 , G01N2203/0286 , G01N2203/0298 , H01L21/0217 , H01L21/32055 , H01L22/32 , H01L23/564 , H01L2924/0002 , H01L2924/00
Abstract: According to an embodiment, a micro-fabricated test structure includes a structure mechanically coupled between two rigid anchors and disposed above a substrate. The structure is released from the substrate and includes a test layer mechanically coupled between the two rigid anchors. The test layer includes a first region having a first cross-sectional area and a constricted region having a second cross-sectional area smaller than the first cross-sectional area. The structure also includes a first tensile stressed layer disposed on a surface of the test layer adjacent the first region.
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公开(公告)号：US09584941B2
公开(公告)日：2017-02-28
申请号：US14711630
申请日：2015-05-13
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe
CPC classification number: H04R31/00 , H04R1/00 , H04R1/005 , H04R9/06 , H04R17/00 , H04R19/005 , H04R19/02 , H04R2201/003 , H04R2231/00 , Y10T29/49005
Abstract: A digital loudspeaker and a method for operating a digital loudspeaker are disclosed. In an embodiment a digital loudspeaker includes a substrate, a first stator fixed with respect to the substrate, a second stator fixed with respect to the substrate and spaced at a distance from the first stator, and a membrane between the first stator and the second stator. The membrane is displaceable between a first position in which the membrane mechanically contacts the first stator and a second position in which the membrane mechanically contacts the second stator. The first stator and the second stator are arranged to electrostatically move the membrane from a rest position spaced apart from the first position and the second position to the first position and the second position, respectively.
Abstract translation: 公开了一种用于操作数字扬声器的数字扬声器和方法。 在一个实施例中，数字扬声器包括基板，相对于基板固定的第一定子，相对于基板固定并与第一定子隔开一段距离的第二定子，以及在第一定子和第二定子之间的隔膜 。 膜可以在其中机械地接触第一定子的第一位置和薄膜机械地接触第二定子的第二位置之间移位。 第一定子和第二定子被布置成使隔膜从静止位置静止地从第一位置和第二位置间隔开移动到第一位置和第二位置。
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公开(公告)号：US20160318759A1
公开(公告)日：2016-11-03
申请号：US15206836
申请日：2016-07-11
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Stephan Pindl , Bernhard Knott , Carsten Ahrens
CPC classification number: B81C1/00825 , B81B2201/0235 , B81B2201/0257 , B81B2201/0264 , B81C1/00873 , B81C2201/017 , B81C2201/053 , H04R19/005 , H04R19/04 , H04R31/00 , H04R2201/003
Abstract: A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack on a first main surface of a substrate, forming a polymer layer on a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.
Abstract translation: 公开了一种制造MEMS器件的方法。 此外，公开了一种MEMS器件和包括MEMS器件的模块。 一个实施例包括用于制造MEMS器件的方法，包括在衬底的第一主表面上形成MEMS堆叠，在衬底的第二主表面上形成聚合物层，并在聚合物层和衬底中形成第一开口，使得 第一个开口与MEMS堆栈相邻。
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公开(公告)号：US20160282259A1
公开(公告)日：2016-09-29
申请号：US15079840
申请日：2016-03-24
Applicant: Infineon Technologies AG , Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.
Inventor： Stefan Kolb , Alfons Dehe , Jochen Huber , Franz Jost , Horst Theuss , Wilhelm Wiedmeier , Juergen Woellenstein
IPC: G01N21/17
CPC classification number: G01N21/1702 , G01N29/022 , G01N29/2418 , G01N29/30 , G01N2021/1704 , G01N2291/0256
Abstract: Shown is a gas sensor including a sensor element, a measurement chamber and an emitter element. The sensor element has a MEMS membrane which is arranged in a first substrate region. Furthermore, the measurement chamber is embodied to receive a measurement gas.
Abstract translation: 示出了包括传感器元件，测量室和发射器元件的气体传感器。 传感器元件具有布置在第一衬底区域中的MEMS膜。 此外，测量室被实施为接收测量气体。
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Patent Agency Ranking
公开(公告)号：US20160234619A1
公开(公告)日：2016-08-11
申请号：US15099758
申请日：2016-04-15
Applicant: Infineon Technologies AG
Inventor： Shu-Ting Hsu , Alfons Dehe
CPC classification number: H04R31/006 , H04R1/02 , H04R9/048 , H04R19/005 , H04R19/013 , H04R2201/003 , H04R2201/029
Abstract: A sound transducer includes a substrate with a cavity with extending from a first surface of the substrate, a body at least partially covering the cavity and being connected to the substrate by at least one resilient hinge, a first set of comb fingers mounted to the substrate, and a second set of comb fingers mounted to the body. The first set of comb fingers and the second set of comb fingers are interdigitated and configured to create an electrostatic force driving the body in a direction perpendicular to the first surface of the substrate. The body and the at least one resilient hinge are configured for a resonant or a near-resonant excitation by the electrostatic force.
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公开(公告)号：US20160043664A1
公开(公告)日：2016-02-11
申请号：US14452565
申请日：2014-08-06
Applicant: Infineon Technologies AG
Inventor： Horst Theuss , Alfons Dehe
IPC: H02N11/00
CPC classification number: B81B7/007 , B81B2201/0257 , B81B2207/097 , H01L2224/48091 , H01L2224/48137 , H01L2224/49109 , H01L2924/00014
Abstract: A transducer structure is disclosed. The transducer structure may include a substrate with a MEMS structure located on a first side of the substrate and a lid coupled to the first side of the substrate and covering the MEMS structure. The substrate may include an electric contact which is laterally displaced from the lid on the first side of the substrate and electrically coupled to the MEMS structure.
Abstract translation: 公开了一种换能器结构。 换能器结构可以包括具有位于衬底的第一侧上的MEMS结构的衬底和耦合到衬底的第一侧并覆盖MEMS结构的盖。 衬底可以包括电触点，其在衬底的第一侧上从盖子侧向移位并且电耦合到MEMS结构。
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公开(公告)号：US20160016787A1
公开(公告)日：2016-01-21
申请号：US14811050
申请日：2015-07-28
Applicant: Infineon Technologies AG
Inventor： Marc Fueldner , Alfons Dehe
IPC: B81B3/00
CPC classification number: B81B3/0021 , B81B2201/0257 , B81B2203/0127 , B81C1/00158 , B81C1/0023 , H01L2224/48091 , H01L2224/48195 , H01L2224/48471 , H01L2224/73265 , H01L2924/10253 , H01L2924/3025 , H04R2201/003 , H01L2924/00014 , H01L2924/00
Abstract: A sensor module and semiconductor chip. One embodiment provides a carrier. A semiconductor chip includes a first recess and a second recess and a main surface of the semiconductor chip. The semiconductor chip is mounted to the carrier such that the first recess forms a first cavity with the carrier and the second recess forms a second cavity with the carrier. The first cavity is in fluid connection with the second cavity.
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公开(公告)号：US09102519B2
公开(公告)日：2015-08-11
申请号：US13804934
申请日：2013-03-14
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Carsten Ahrens , Stefan Barzen , Wolfgang Friza
CPC classification number: B81B3/0072 , B81B3/001 , B81B3/0027 , B81B2201/0257 , B81B2203/0127 , B81B2203/0315 , B81C1/00182 , B81C1/00404 , B81C1/00984 , B81C2201/017 , B81C2201/115
Abstract: In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a sacrificial layer over a first surface of a workpiece having the first surface and an opposite second surface. A membrane is formed over the sacrificial layer. A through hole is etched through the workpiece from the second surface to expose a surface of the sacrificial layer. At least a portion of the sacrificial layer is removed from the second surface to form a cavity under the membrane. The cavity is aligned with the membrane.
Abstract translation: 根据本发明的实施例，形成半导体器件的方法包括在具有第一表面和相对的第二表面的工件的第一表面上形成牺牲层。 在牺牲层上形成膜。 从第二表面通过工件蚀刻通孔以暴露牺牲层的表面。 牺牲层的至少一部分从第二表面移除以在膜下形成空腔。 空腔与膜对准。
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公开(公告)号：US09090453B2
公开(公告)日：2015-07-28
申请号：US14100148
申请日：2013-12-09
Applicant: Infineon Technologies AG
Inventor： Marc Fueldner , Alfons Dehe
IPC: B81C1/00 , H01L41/113 , H04R19/01 , B81B3/00
CPC classification number: B81B3/0021 , B81B2201/0257 , B81B2203/0127 , B81C1/00158 , B81C1/0023 , H01L2224/48091 , H01L2224/48195 , H01L2224/48471 , H01L2224/73265 , H01L2924/10253 , H01L2924/3025 , H04R2201/003 , H01L2924/00014 , H01L2924/00
Abstract: A sensor module and semiconductor chip. One embodiment provides a carrier. A semiconductor chip includes a first recess and a second recess and a main surface of the semiconductor chip. The semiconductor chip is mounted to the carrier such that the first recess forms a first cavity with the carrier and the second recess forms a second cavity with the carrier. The first cavity is in fluid connection with the second cavity.
Abstract translation: 传感器模块和半导体芯片。 一个实施例提供一种载体。 半导体芯片包括半导体芯片的第一凹部和第二凹部以及主表面。 半导体芯片被安装到载体上，使得第一凹槽形成第一空腔，载体和第二凹槽与载体形成第二腔。 第一腔与第二腔流体连接。
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