Patent search ap:("INTERNATIONAL BUSINESS MACHINES CORPORATION") AND inv:"Steven M. Shank" Page 9

81.

发明授权
Integrated photodetector waveguide structure with alignment tolerance 有权

公开(公告)号：US10784386B2

公开(公告)日：2020-09-22

申请号：US16674438

申请日：2019-11-05

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Solomon Assefa , Bruce W. Porth , Steven M. Shank

IPC: H01L31/028 , H01L31/18 , H01L31/032 , H01L31/0232 , G02B6/42 , H01L31/09 , G06F30/30 , G02B6/122 , G02B6/136 , H01L31/0203 , H01L29/06 , H01L31/0304 , G02B6/12 , H01L31/0352 , H01L31/20 , G02B6/13

Abstract: An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.

82.

发明授权
Integrated photodetector waveguide structure with alignment tolerance 有权

公开(公告)号：US10763379B2

公开(公告)日：2020-09-01

申请号：US16033649

申请日：2018-07-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Solomon Assefa , Bruce W. Porth , Steven M. Shank

IPC: H01L31/0232 , H01L31/18 , H01L31/028 , G02B6/42 , H01L31/09 , G06F30/30 , G02B6/122 , G02B6/136 , H01L31/0203 , H01L29/06 , H01L31/0304 , G02B6/12 , H01L31/0352 , H01L31/20 , G02B6/13

Abstract: An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.

83.

发明授权
Backside contact to a final substrate 有权

公开(公告)号：US10566235B2

公开(公告)日：2020-02-18

申请号：US15788536

申请日：2017-10-19

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jeffrey P. Gambino , Mark D. Jaffe , Steven M. Shank , Anthony K. Stamper

IPC: H01L21/74 , H01L21/768 , H01L23/482 , H01L21/683 , H01L21/762 , H01L23/532 , H01L27/12 , H01L29/06 , H01L29/10

Abstract: A method for fabricating a backside contact using a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, and a handle wafer. The method includes forming an electrically-conducting connection in a trench. The handle wafer is removed. After the handle wafer is removed, the buried insulator layer is partially removed to expose the electrically-conducting connection. After the buried insulator layer is partially removed, a final substrate is connected to the buried insulator layer such that the electrically-conducting connection contacts the final substrate.

84.

发明授权
Backside device contact 有权

公开(公告)号：US10224280B2

公开(公告)日：2019-03-05

申请号：US15824906

申请日：2017-11-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jeffrey P. Gambino , Mark D. Jaffe , Steven M. Shank , Anthony K. Stamper

IPC: H01L29/40 , H01L23/528 , H01L21/768 , H01L21/762 , H01L21/683 , H01L23/522 , H01L27/12 , H01L29/06 , H01L23/485

Abstract: A back-side device structure with a silicon-on-insulator substrate that includes: a first dielectric layer that includes a first via that communicates with a trench, a contact plug that fills the trench, and a first contact formed in a second dielectric layer. The first contact fills the first via and connects with the contact plug and a wire formed in a third dielectric layer. A final substrate is connected to a buried insulator layer of the silicon-on-insulator substrate such that the contact plug contacts metallization of the final substrate.

85.

发明申请
SILICON PHOTONICS INTEGRATION METHOD AND STRUCTURE 审中-公开

公开(公告)号：US20180269338A1

公开(公告)日：2018-09-20

申请号：US15980014

申请日：2018-05-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Solomon Assefa , Tymon Barwicz , William M. Green , Marwan H. Khater , Jessie C. Rosenberg , Steven M. Shank

IPC: H01L31/0203 , G02B6/42 , H01L31/153 , H01L31/02 , H01L31/18 , H01L31/0232

Abstract: Approaches for silicon photonics integration are provided. A method includes: forming at least one encapsulating layer over and around a photodetector; thermally crystallizing the photodetector material after the forming the at least one encapsulating layer; and after the thermally crystallizing the photodetector material, forming a conformal sealing layer on the at least one encapsulating layer and over at least one device. The conformal sealing layer is configured to seal a crack in the at least one encapsulating layer. The photodetector and the at least one device are on a same substrate. The at least one device includes a complementary metal oxide semiconductor device or a passive photonics device.

86.

发明授权
Backside contact to a final substrate 有权

公开(公告)号：US10074561B2

公开(公告)日：2018-09-11

申请号：US15274423

申请日：2016-09-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jeffrey P. Gambino , Mark D. Jaffe , Steven M. Shank , Anthony K. Stamper

IPC: H01L21/768 , H01L23/482 , H01L21/762 , H01L23/532 , H01L27/12 , H01L29/06 , H01L29/10 , H01L21/683 , H01L21/74

CPC classification number: H01L21/76895 , H01L21/6835 , H01L21/743 , H01L21/76251 , H01L21/76898 , H01L23/4825 , H01L23/4827 , H01L23/53271 , H01L27/1203 , H01L29/0649 , H01L29/1087 , H01L2221/68327 , H01L2221/6834 , H01L2221/68368

Abstract: A device structure is formed using a silicon-on-insulator substrate. The device structure includes a first switch and a second switch that are formed using a device layer of the silicon-on-insulator substrate. A trap-rich layer is between a substrate and a buried insulator layer of the silicon on-insulator substrate. An electrically-conducting connection is located in a trench extending from the device layer through the buried insulator layer to the trap-rich layer such that the electrically-conducting connection is coupled with the substrate. The electrically-conducting connection at least partially comprised of trap-rich material.

87.

发明授权
Integrated waveguide structure with perforated chip edge seal 有权

公开(公告)号：US09874690B2

公开(公告)日：2018-01-23

申请号：US14046506

申请日：2013-10-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jeffrey P. Gambino , Robert K. Leidy , Steven M. Shank

IPC: G02B6/122 , G02B6/42 , G02B6/12

CPC classification number: G02B6/122 , G02B6/423 , G02B2006/12061 , G02B2006/12123

Abstract: An integrated waveguide structure with perforated chip edge seal and methods of manufacture are disclosed herein. The structure includes a guard ring structure surrounding an active region of an integrated circuit chip. The structure further includes a gap in the guard ring structure which is located at a predetermined level of the integrated circuit chip. The structure further includes a waveguide structure formed on a substrate of the integrated circuit chip. The structure further includes a fiber optic optically coupled to the waveguide structure through the gap formed in the guard ring structure.

88.

发明申请
SILICON PHOTONICS INTEGRATION METHOD AND STRUCTURE 有权

公开(公告)号：US20170194513A1

公开(公告)日：2017-07-06

申请号：US15463189

申请日：2017-03-20

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Solomon Assefa , Tymon Barwicz , William M. Green , Marwan H. Khater , Jessie C. Rosenberg , Steven M. Shank

IPC: H01L31/0203 , G02B6/42 , H01L31/02 , H01L31/153 , H01L31/0232 , H01L31/18

CPC classification number: H01L31/0203 , G02B6/00 , G02B6/12004 , G02B6/4253 , H01L21/0217 , H01L21/02271 , H01L21/02274 , H01L21/32053 , H01L21/84 , H01L27/1443 , H01L28/20 , H01L31/02019 , H01L31/02161 , H01L31/02327 , H01L31/153 , H01L31/18 , H01L31/1808 , H01L31/186 , H01L31/1872 , Y02E10/50 , Y02P70/521

Abstract: Approaches for silicon photonics integration are provided. A method includes: forming at least one encapsulating layer over and around a photodetector; thermally crystallizing the photodetector material after the forming the at least one encapsulating layer; and after the thermally crystallizing the photodetector material, forming a conformal sealing layer on the at least one encapsulating layer and over at least one device. The conformal sealing layer is configured to seal a crack in the at least one encapsulating layer. The photodetector and the at least one device are on a same substrate. The at least one device includes a complementary metal oxide semiconductor device or a passive photonics device.