公开(公告)号：US20090283770A1

公开(公告)日：2009-11-19

申请号：US12384292

申请日：2009-04-02

申请人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： H01L29/786

CPC分类号： H01L51/0558 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545

摘要： A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The semiconducting layer includes a carbon nanotube layer, and the carbon nanotube layer comprises a plurality of semiconducting carbon nanotubes.

摘要翻译： 薄膜晶体管包括源电极，漏电极，半导体层和栅电极。 漏电极与源电极间隔开。 半导体层连接到源电极和漏电极。 栅电极通过绝缘层与源电极，漏电极和半导体层绝缘。 半导体层包括碳纳米管层，碳纳米管层包含多个半导体碳纳米管。

公开(公告)号：US20090253247A1

公开(公告)日：2009-10-08

申请号：US12291300

申请日：2008-11-06

申请人： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： H01L21/20

CPC分类号： C01B33/06 ,  Y10S117/902

摘要： A method for making iron silicide nano-wires comprises the following steps. Firstly, providing a growing substrate and a growing device, the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of iron powder into the reacting room. Thirdly, introducing a silicon-containing gas into the reacting room. Finally, heating the reacting room to a temperature of 600-1200° C.

摘要翻译： 制造铁硅化物纳米线的方法包括以下步骤。 首先，提供增长的衬底和生长装置，该生长装置包括加热装置和反应室。 其次，将生长的基材和一定量的铁粉放入反应室。 第三，将含硅气体引入反应室。 最后，将反应室加热至600-1200℃

公开(公告)号：US09556018B2

公开(公告)日：2017-01-31

申请号：US13340194

申请日：2011-12-29

申请人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Yuan-Hao Jin ,  Shou-Shan Fan

发明人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Yuan-Hao Jin ,  Shou-Shan Fan

IPC分类号： B32B3/30 ,  B81C1/00 ,  B82Y30/00

CPC分类号： B81C1/00111 ,  B82Y30/00 ,  Y10T428/24479 ,  Y10T428/2457

摘要： A three-dimensional nano-structure array includes a substrate and a number of three-dimensional nano-structures. Each three-dimensional nano-structure has a first peak and a second peak aligned side by side. A first groove is defined between the first peak and the second peak. A second groove is defined between the two adjacent three-dimensional nano-structures. A depth of the first groove is lower than that of the second groove.

摘要翻译： 三维纳米结构阵列包括基底和多个三维纳米结构。 每个三维纳米结构具有并排排列的第一峰和第二峰。 在第一峰和第二峰之间限定第一凹槽。 在两个相邻的三维纳米结构之间限定第二凹槽。 第一槽的深度低于第二槽的深度。

公开(公告)号：US09012767B2

公开(公告)日：2015-04-21

申请号：US13572766

申请日：2012-08-13

申请人： Yuan-Hao Jin ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Yuan-Hao Jin ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： H01L31/00 ,  H01L31/068

CPC分类号： H01L31/068 ,  H01L31/022425 ,  H01L31/0687 ,  H01L31/1804 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell system includes a number of P-N junction cells, a number of inner electrodes, a first collecting electrode and a second collecting electrode. The number of the P-N junction cells is M. M is equal to or greater than 2. The M P-N junction cells are arranged from a first P-N junction cell to an Mth P-N junction cell along a straight line. The P-N junction cells are arranged in series along the straight line. The number of the inner electrodes is M−1. At least one inner electrode includes a carbon nanotube array. A first collecting electrode located on an outside surface of the first P-N junction cell. A second collecting electrode located on an outside surface of the Mth P-N junction cell. A photoreceptive surface is parallel to the straight line.

摘要翻译： 太阳能电池系统包括多个P-N结电池，多个内电极，第一集电极和第二集电极。 P-N结电池的数量为M.M等于或大于2.M P-N结电池沿着直线从第一P-N结电池排列到第M个P-N结电池。 P-N结电池沿着直线串联排列。 内部电极的数量为M-1。 至少一个内部电极包括碳纳米管阵列。 位于第一P-N结电池的外表面上的第一集电极。 位于第M个P-N结电池的外表面上的第二集电极。 感光面平行于直线。

公开(公告)号：US08790940B2

公开(公告)日：2014-07-29

申请号：US13479232

申请日：2012-05-23

申请人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Shou-Shan Fan

发明人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Shou-Shan Fan

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/0079 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L33/005 ,  H01L33/24

摘要： A method for making light emitting diode includes the following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. The substrate is removed and a surface of the first semiconductor layer is exposed. A first electrode is applied to cover the exposed surface. A second electrode is electrically connected with the second semiconductor layer.

摘要翻译： 制造发光二极管的方法包括以下步骤。 提供基板。 在衬底的表面上生长第一半导体层。 图案化的掩模层位于第一半导体层的表面上，并且图案化掩模层包括多个棒状突出结构，在每个两个相邻的突出结构之间限定狭缝以暴露第一半导体层的一部分。 暴露的第一半导体层被蚀刻以形成突出的一对。 形成多个三维纳米结构。 在三维纳米结构的数量上依次生长活性层和第二半导体层。 去除衬底并暴露第一半导体层的表面。 施加第一电极以覆盖暴露的表面。 第二电极与第二半导体层电连接。

公开(公告)号：US08629424B2

公开(公告)日：2014-01-14

申请号：US13479227

申请日：2012-05-23

申请人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Shou-Shan Fan

发明人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Shou-Shan Fan

IPC分类号： H01L29/06

CPC分类号： H01L33/24 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22

摘要： A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structures is M-shaped.

摘要翻译： 提供了包括基板，第一半导体层，有源层和第二半导体层的发光二极管。 第一半导体层包括第一表面和第二表面，并且第一表面连接到基板。 有源层和第二半导体层以该顺序堆叠在第二表面上，并且第二半导体层远离有源层的表面被配置为发光表面。 第一电极与第一半导体层电连接。 第二电极与第二半导体层电连接。 多个三维纳米结构位于第一半导体层和发光面的第一表面的表面上，并且每个三维纳米结构的横截面为M形。

公开(公告)号：US08492682B2

公开(公告)日：2013-07-23

申请号：US12981575

申请日：2010-12-30

申请人： Xue-Shen Wang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Xue-Shen Wang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： H05B3/10 ,  H01C3/14

CPC分类号： H05B3/145 ,  H05B2214/04

摘要： A micro heater includes a first electrode, a second electrode, a first carbon nanotube, and a second carbon nanotube. The first carbon nanotube extends from the first electrode. The second carbon nanotube branches from the second electrode. The first carbon nanotube and the second carbon nanotube intersect with each other to define a node therebetween.

摘要翻译： 微加热器包括第一电极，第二电极，第一碳纳米管和第二碳纳米管。 第一碳纳米管从第一电极延伸。 第二碳纳米管从第二电极分支。 第一碳纳米管和第二碳纳米管彼此交叉以在其间限定一个节点。

公开(公告)号：US08404503B1

公开(公告)日：2013-03-26

申请号：US13340658

申请日：2011-12-29

申请人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： H01L21/00

CPC分类号： B82Y20/00 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44

摘要： A method for making light emitting diode is provided. The method includes following steps. A light emitting diode chip is provided, wherein the light emitting diode chip comprises a first semiconductor layer, an active layer and a second semiconductor layers stacked together in that order. A patterned mask layer is located on a surface of the first semiconductor layer, wherein the patterned mask layer includes a number of bar-shaped protruding structures aligned side by side, and a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed portion of the first semiconductor layer is etched to form a protruding pair. A number of M-shaped three-dimensional nano-structures are formed by removing the mask layer. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer.

摘要翻译： 提供一种制造发光二极管的方法。 该方法包括以下步骤。 提供了一种发光二极管芯片，其中发光二极管芯片包括按顺序堆叠在一起的第一半导体层，有源层和第二半导体层。 图案化的掩模层位于第一半导体层的表面上，其中图案化掩模层包括多个并排排列的条形突出结构，并且在每个两个相邻的突出结构之间限定狭缝以暴露部分 第一半导体层。 蚀刻第一半导体层的暴露部分以形成突出的一对。 通过去除掩模层形成多个M形的三维纳米结构。 第一电极与第一半导体层电连接。 第二电极与第二半导体层电连接。

公开(公告)号：US08871533B2

公开(公告)日：2014-10-28

申请号：US13556279

申请日：2012-07-24

申请人： Yuan-Hao Jin ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Yuan-Hao Jin ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： H01L21/00

CPC分类号： H01L31/035281 ,  H01L31/042 ,  H01L31/043 ,  H01L31/047 ,  H01L31/056 ,  H01L31/068 ,  H01L31/1804 ,  H01L2924/0002 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

摘要： A solar cell making method includes steps of making a round P-N junction preform by (a) stacking a P-type silicon layer and a N-type silicon layer on top of each other, and (b) forming a P-N junction near an interface between the P-type silicon layer and the N-type silicon layer, wherein the round P-N junction preform defines a first surface and a second surface; forming a first electrode preform on the first surface and forming a second electrode preform on the second surface, thereby forming a round solar cell preform; and forming a photoreceptive surface with the P-N junction exposed on the photoreceptive surface by cutting the round solar cell preform into a plurality of arc shaped solar cells, the photoreceptive surface being on a curved surface of the arc shaped solar cell and being configured to receive incident light beams.

摘要翻译： 一种太阳能电池制造方法包括以下步骤：通过（a）在彼此顶部堆叠P型硅层和N型硅层来制造圆形PN结预成型件，以及（b）在接合点之间形成PN结， 所述P型硅层和所述N型硅层，其中所述圆形PN结预制件限定第一表面和第二表面; 在所述第一表面上形成第一电极预制件，并在所述第二表面上形成第二电极预制件，从而形成圆形太阳能电池预制件; 以及通过将所述圆形太阳能电池预制件切割成多个弧形太阳能电池而形成具有通过将所述圆形太阳能电池预制件切割成多个弧形太阳能电池的所述PN结暴露在所述感光表面上的感光面，所述感光表面位于所述弧形太阳能电池的弯曲表面上， 光束。

公开(公告)号：US08778709B2

公开(公告)日：2014-07-15

申请号：US13479229

申请日：2012-05-23

申请人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Shou-Shan Fan

发明人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Shou-Shan Fan

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/0066 ,  H01L33/06 ,  H01L33/22 ,  H01L33/24

摘要： A method for making light emitting diode includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is located to cover the entire surface of the second semiconductor layer which is away from the active layer.

摘要翻译： 制造发光二极管的方法包括以下步骤。 提供基板。 在衬底的表面上生长第一半导体层。 图案化的掩模层位于第一半导体层的表面上，并且图案化掩模层包括多个棒状突出结构，在每个两个相邻的突出结构之间限定狭缝以暴露第一半导体层的一部分。 暴露的第一半导体层被蚀刻以形成突出的一对。 通过去除图案化掩模层形成多个三维纳米结构。 在三维纳米结构的数量上依次生长有源层和第二半导体层。 第一电极与第一半导体层电连接。 第二电极被定位成覆盖远离有源层的第二半导体层的整个表面。