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    Apparatus And Method Of Measuring Roughness And Other Parameters Of A Structure
    81.
    发明申请
    Apparatus And Method Of Measuring Roughness And Other Parameters Of A Structure 有权
    测量结构的粗糙度和其他参数的装置和方法

    公开(公告)号：US20130182263A1

    公开(公告)日：2013-07-18

    申请号：US13740464

    申请日：2013-01-14

    Applicant: KLA-TENCOR CORPORATION

    Inventor： Andrei V. Shchegrov ,  Gregory Brady ,  Kevin Peterlinz

    IPC: G01B9/02

    CPC classification number: G01B9/02 ,  G01B11/24 ,  G01B2210/56

    Abstract: Systems and methods are presented to enhance and isolate residual signals indicative of the speckle field based on measurements taken by optically based metrology systems. Structural irregularities such as roughness and topographical errors give rise to light scattered outside of the specularly reflected component of the diffracted light. The scattered light interferes constructively or destructively with the specular component in a high numerical aperture illumination and detection system to form a speckle field. Various methods of determining residual signals indicative of the speckle field are presented. Furthermore, various methods of determining structural irregularities based on analysis of the residual signals are presented. In various embodiments, illumination with a high degree of spatial coherence is provided over any of a wide range of angles of incidence, multiple polarization channels, and multiple wavelength channels. In addition, diffracted light is collected over a wide range of angles of detection.

    Abstract translation: 提出了系统和方法，以基于光学测量系统所采取的测量来增强和分离指示散斑场的残留信号。 诸如粗糙度和形貌错误的结构不规则导致散射在衍射光的镜面反射分量之外的光。 散射光在高数值孔径照明和检测系统中与镜面分量建设性或破坏性地干涉以形成斑点。 提出了确定表示斑点的残余信号的各种方法。 此外，提出了基于剩余信号分析确定结构不规则性的各种方法。 在各种实施例中，在宽范围的入射角，多个极化通道和多个波长通道中的任何一个上提供具有高度空间相干性的照明。 另外，在宽范围的检测角度收集衍射光。

    Semiconductor metrology based on hyperspectral imaging
    83.
    发明授权
    Semiconductor metrology based on hyperspectral imaging 有权

    公开(公告)号：US10801953B2

    公开(公告)日：2020-10-13

    申请号：US16245695

    申请日：2019-01-11

    Applicant: KLA-Tencor Corporation

    Inventor： David Y. Wang ,  Alexander Buettner ,  Stilian Ivanov Pandev ,  Emanuel Saerchen ,  Andrei V. Shchegrov ,  Barry Blasenheim

    IPC: G01J3/28 ,  G01N21/3563 ,  H01L21/66 ,  G01N21/21

    Abstract: Methods and systems for performing semiconductor measurements based on hyperspectral imaging are presented herein. A hyperspectral imaging system images a wafer over a large field of view with high pixel density over a broad range of wavelengths. Image signals collected from a measurement area are detected at a number of pixels. The detected image signals from each pixel are spectrally analyzed separately. In some embodiments, the illumination and collection optics of a hyperspectral imaging system include fiber optical elements to direct illumination light from the illumination source to the measurement area on the surface of the specimen under measurement and fiber optical elements to image the measurement area. In another aspect, a fiber optics collector includes an image pixel mapper that couples a two dimensional array of collection fiber optical elements into a one dimensional array of pixels at the spectrometer and the hyperspectral detector.

    Semiconductor Metrology Based On Hyperspectral Imaging
    84.
    发明申请
    Semiconductor Metrology Based On Hyperspectral Imaging 审中-公开

    公开(公告)号：US20200225151A1

    公开(公告)日：2020-07-16

    申请号：US16245695

    申请日：2019-01-11

    Applicant: KLA-Tencor Corporation

    Inventor： David Y. Wang ,  Alexander Buettner ,  Stilian Ivanov Pandev ,  Emanuel Saerchen ,  Andrei V. Shchegrov ,  Barry Blasenheim

    IPC: G01N21/3563 ,  G01J3/28 ,  H01L21/66 ,  G01N21/21

    Abstract: Methods and systems for performing semiconductor measurements based on hyperspectral imaging are presented herein. A hyperspectral imaging system images a wafer over a large field of view with high pixel density over a broad range of wavelengths. Image signals collected from a measurement area are detected at a number of pixels. The detected image signals from each pixel are spectrally analyzed separately. In some embodiments, the illumination and collection optics of a hyperspectral imaging system include fiber optical elements to direct illumination light from the illumination source to the measurement area on the surface of the specimen under measurement and fiber optical elements to image the measurement area. In another aspect, a fiber optics collector includes an image pixel mapper that couples a two dimensional array of collection fiber optical elements into a one dimensional array of pixels at the spectrometer and the hyperspectral detector.

    Hybrid metrology for patterned wafer characterization
    85.
    发明授权
    Hybrid metrology for patterned wafer characterization 有权

    公开(公告)号：US10712145B2

    公开(公告)日：2020-07-14

    申请号：US15787789

    申请日：2017-10-19

    Applicant: KLA-Tencor Corporation

    Inventor： Boxue Chen ,  Andrei Veldman ,  Alexander Kuznetsov ,  Andrei V. Shchegrov

    IPC: G01B11/02 ,  G01B15/00 ,  G01N21/95 ,  G01N21/956 ,  G01N23/225 ,  G01N23/201 ,  H01L21/66 ,  G01N23/2251

    Abstract: Methods and systems for evaluating the geometric characteristics of patterned structures are presented. More specifically, geometric structures generated by one or multiple patterning processes are measured by two or more metrology systems in accordance with a hybrid metrology methodology. A measurement result from one metrology system is communicated to at least one other metrology systems to increase the measurement performance of the receiving system. Similarly, a measurement result from the receiving metrology system is communicated back to the sending metrology system to increase the measurement performance of the sending system. In this manner, measurement results obtained from each metrology system are improved based on measurement results received from other cooperating metrology systems. In some examples, metrology capability is expanded to measure parameters of interest that were previously unmeasurable by each metrology system operating independently. In other examples, measurement sensitivity is improved and parameter correlation is reduced.

    Overlay metrology using multiple parameter configurations
    86.
    发明授权
    Overlay metrology using multiple parameter configurations 有权

    公开(公告)号：US10401738B2

    公开(公告)日：2019-09-03

    申请号：US15667401

    申请日：2017-08-02

    Applicant: KLA-Tencor Corporation

    Inventor： Andrew V. Hill ,  Andrei V. Shchegrov ,  Amnon Manassen ,  Noam Sapiens

    IPC: G02B3/00 ,  G03F7/20 ,  G01B11/14 ,  G01N21/47 ,  G01N21/84 ,  G02B27/10 ,  G02B27/42

    Abstract: An overlay metrology system includes an overlay metrology tool configurable to generate overlay signals with a plurality of recipes and further directs an illumination beam to an overlay target and collects radiation emanating from the overlay target in response to the at least a portion of the illumination beam to generate the overlay signal with the particular recipe. The overlay metrology system further acquires two or more overlay signals for a first overlay target using two or more unique recipes, subsequently acquires two or more overlay signals for a second overlay target using the two or more unique recipes, determines candidate overlays for the first and second overlay targets based on the two or more overlay signals for each target, and determines output overlays for the first and second overlay targets based on the two or more candidate overlays for each target.

    Signal response metrology for scatterometry based overlay measurements
    87.
    发明授权
    Signal response metrology for scatterometry based overlay measurements 有权

    公开(公告)号：US10352876B2

    公开(公告)日：2019-07-16

    申请号：US14704840

    申请日：2015-05-05

    Applicant: KLA—Tencor Corporation

    Inventor： Andrei V. Shchegrov ,  Stilian Ivanov Pandev ,  Jonathan M. Madsen ,  Alexander Kuznetsov ,  Walter Dean Mieher

    IPC: G06N20/00 ,  G01N21/95 ,  G01B11/27

    Abstract: Methods and systems for creating a measurement model based only on measured training data are presented. The trained measurement model is then used to calculate overlay values directly from measured scatterometry data. The measurement models receive scatterometry signals directly as input and provide overlay values as output. In some embodiments, overlay error is determined from measurements of design rule structures. In some other embodiments, overlay error is determined from measurements of specialized target structures. In a further aspect, the measurement model is trained and employed to measure additional parameters of interest, in addition to overlay, based on the same or different metrology targets. In some embodiments, measurement data from multiple targets, measurement data collected by multiple metrologies, or both, is used for model building, training, and measurement. In some embodiments, an optimization algorithm automates the measurement model building and training process.

    Methods And Systems For Semiconductor Metrology Based On Polychromatic Soft X-Ray Diffraction
    90.
    发明申请
    Methods And Systems For Semiconductor Metrology Based On Polychromatic Soft X-Ray Diffraction 审中-公开

    公开(公告)号：US20190017946A1

    公开(公告)日：2019-01-17

    申请号：US16030849

    申请日：2018-07-09

    Applicant: KLA-Tencor Corporation

    Inventor： Daniel Wack ,  Oleg Khodykin ,  Andrei V. Shchegrov ,  Alexander Kuznetsov ,  Nikolay Artemiev ,  Michael Friedmann

    IPC: G01N23/201 ,  G01N23/20008 ,  H01L21/66 ,  H01L21/67

    Abstract: Methods and systems for performing measurements of semiconductor structures based on high-brightness, polychromatic, reflective small angle x-ray scatterometry (RSAXS) metrology are presented herein. RSAXS measurements are performed over a range of wavelengths, angles of incidence, and azimuth angles with small illumination beam spot size, simultaneously or sequentially. In some embodiments, RSAXS measurements are performed with x-ray radiation in the soft x-ray (SXR) region at grazing angles of incidence in the range of 5-20 degrees. In some embodiments, the x-ray illumination source size is 10 micrometers or less, and focusing optics project the source area onto a wafer with a demagnification factor of 0.2 or less, enabling an incident x-ray illumination spot size of less than two micrometers. In another aspect, active focusing optics project programmed ranges of illumination wavelengths, angles of incidence, and azimuth angles, or any combination thereof, onto a metrology area, either simultaneously or sequentially.

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