Abstract:
Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.
Abstract translation:公开了形成电容器的电容器和方法,其包括内部导电金属电容器电极和外部导电金属电容器电极。 电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间,并且具有不大于150埃的厚度。 公开了厚度和关系的材料的各种组合,其相互之间可以实现和导致电介质区域的介电常数k至少为35,而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / cm 2 + 1.1V。
Abstract:
In a system and method for controlled user tracking, a mobile device is provided for transmitting an identification signal, and a reader unit, which is statically located at a location, is provided for receiving the identification signal and transmitting to a surveillance control unit, in response to receipt of the identification signal, either the received identification signal or another signal that identifies the mobile device, for logging by the surveillance control unit of a presence of the mobile device at the location, where the mobile device and/or the reader unit is configured to transmit at least one surveillance control message for control of surveillance at the location.
Abstract:
Select devices including an open volume that functions as a high bandgap material having a low dielectric constant are disclosed. The open volume may provide a more nonlinear, asymmetric I-V curve and enhanced rectifying behavior in the select devices. The select device may comprise, for example, a metal-insulator-insulator-metal (MIIM) device. Various methods may be used to form select devices and memory systems including such select devices. Memory devices and electronic systems include such select devices.
Abstract:
Systems and methods are provided for managing a plurality of applications comprising application instances running on a plurality of computer servers. A system for managing application includes an application scheduler. The application scheduler receives at least one policy for managing the applications over the computer servers. The application scheduler also receives usage information indicating performance of the applications and the computer servers. The application scheduler then applies the at least one policy to the usage information to determine whether policy violations exist. The application scheduler then determines and executes a modification action of the applications in response to the policy violation.
Abstract:
A hybrid localization method and a wireless network that performs the method are disclosed herein. In an embodiment of a hybrid localization technique, one or more sensor nodes in the network switch between different localization techniques depending on location area conditions. This technique chooses the most accurate localization technique for the given location area conditions, and thus potentially provides the best possible location accuracy for those conditions. A representative set of simulations and experiments verify the potential performance improvement realized with embodiments of the hybrid localization technique.
Abstract:
A method and system to acknowledge a multicast message includes informing each node in a network about each multicast group to which it belongs, a relative position in each multicast group to which it belongs, and a group size of each multicast group to which it belongs, transmitting the multicast message, and transmitting, by each node in the multicast group, an acknowledgment in an assigned slot, which is determined by the relative position.
Abstract:
Described examples include a resistor having a substrate having a non-conductive surface and a patterned polysilicon layer on the non-conductive surface, the patterned polysilicon layer including polycrystalline silicon wherein at least 90% of the grains in the polycrystalline silicon are 30 nm or smaller. The resistor also has a first terminal in conductive contact with the patterned polysilicon layer and a second terminal in conductive contact with the polysilicon layer and spaced from the first contact.
Abstract:
Select devices for memory cell applications and methods of forming the same are described herein. As an example, one or more non-ohmic select devices can include at least two tunnel barrier regions formed between a first metal material and a second metal material, and a third metal material formed between each of the respective at least two tunnel barrier regions. The non-ohmic select device is a two terminal select device that supports bi-directional current flow therethrough.
Abstract:
Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.
Abstract translation:公开了形成电容器的电容器和方法,其包括内部导电金属电容器电极和外部导电金属电容器电极。 电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间,并且具有不大于150埃的厚度。 公开了厚度和关系的材料的各种组合,其相互之间可以实现和导致电介质区域的介电常数k至少为35,而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / cm 2 + 1.1V。
Abstract:
Some embodiments include memory cells which contain, in order; a first electrode material, a first metal oxide material, a second metal oxide material, and a second electrode material. The first metal oxide material has at least two regions which differ in oxygen concentration relative to one another. One of the regions is a first region and another is a second region. The first region is closer to the first electrode material than the second region, and has a greater oxygen concentration than the second region. The second metal oxide material includes a different metal than the first metal oxide material. Some embodiments include methods of forming memory cells in which oxygen is substantially irreversibly transferred from a region of a metal oxide material to an oxygen-sink material. The oxygen transfer creates a difference in oxygen concentration within one region of the metal oxide material relative to another.