公开(公告)号：US07328259B2

公开(公告)日：2008-02-05

申请号：US10703683

申请日：2003-11-07

申请人： Bhaskar Srinivasan ,  Matthias Eichstaedt ,  Swami Nathan

发明人： Bhaskar Srinivasan ,  Matthias Eichstaedt ,  Swami Nathan

IPC分类号： G06F15/173 ,  G06F15/16

CPC分类号： G06F9/4856

摘要： Systems and methods are provided for managing a plurality of applications comprising application instances running on a plurality of computer servers. A system for managing application includes an application scheduler. The application scheduler receives at least one policy for managing the applications over the computer servers. The application scheduler also receives usage information indicating performance of the applications and the computer servers. The application scheduler then applies the at least one policy to the usage information to determine whether policy violations exist. The application scheduler then determines and executes a modification action of the applications in response to the policy violation.

摘要翻译： 提供了用于管理多个应用的​​系统和方法，所述应用包括在多个计算机服务器上运行的应用程序实例。 用于管理应用的系统包括应用调度器。 应用程序调度器通过计算机服务器接收至少一个用于管理应用程序的策略。 应用调度器还接收指示应用和计算机服务器的性能的使用信息。 应用调度器然后将至少一个策略应用于使用信息以确定是否存在策略违规。 然后，应用程序调度器响应于策略违例来确定并执行应用的修改动作。

公开(公告)号：US08787840B2

公开(公告)日：2014-07-22

申请号：US11432074

申请日：2006-05-10

申请人： Bhaskar Srinivasan ,  Abtin Keshavarzian ,  Dhananjay Lal

发明人： Bhaskar Srinivasan ,  Abtin Keshavarzian ,  Dhananjay Lal

IPC分类号： H04B7/00

CPC分类号： H04W52/0245 ,  H04W84/18 ,  Y02D70/00

摘要： A method of reducing an energy consumption of a wireless network, the method including periodically entering a sleep mode by a receiver node, broadcasting a signal simultaneously across a wide band frequency range, upon waking up from the sleep mode, listening by the receiver node to only a first narrow part of the wide band frequency range, the receiver node subsequently either returning to sleep if a signal strength of the broadcasted signal is less than a predefined signal strength threshold, or staying awake for an additional period of time if the signal strength of the broadcasted signal is greater than the predefined signal strength threshold.

摘要翻译： 一种降低无线网络的能量消耗的方法，所述方法包括接收机节点周期性地进入睡眠模式，在从睡眠模式唤醒时在宽频带范围内同时广播信号，由接收机节点收听 只有宽带频率范围的第一窄部分，如果广播信号的信号强度小于预定信号强度阈值，则接收机节点随后返回睡眠，或者如果信号强度 的广播信号大于预定信号强度阈值。

公开(公告)号：US08498156B2

公开(公告)日：2013-07-30

申请号：US13554278

申请日：2012-07-20

申请人： Gurtej S. Sandhu ,  Bhaskar Srinivasan

发明人： Gurtej S. Sandhu ,  Bhaskar Srinivasan

IPC分类号： G11C16/04 ,  H01L29/788

CPC分类号： G11C16/0416 ,  G11C16/0483

摘要： Memory cell structures and methods are described herein. One or more memory cells include a transistor having a charge storage node, a dielectric material positioned between the charge storage node and a channel region of the transistor, the channel region positioned between a source region and a drain region, and a first electrode of a diode coupled to the charge storage node.

摘要翻译： 本文描述了存储单元结构和方法。 一个或多个存储单元包括具有电荷存储节点的晶体管，位于电荷存储节点和晶体管的沟道区之间的电介质材料，位于源区和漏区之间的沟道区，以及位于源区和漏区之间的第一电极 耦合到电荷存储节点的二极管。

公开(公告)号：US20130005080A1

公开(公告)日：2013-01-03

申请号：US13608992

申请日：2012-09-10

申请人： John Smythe ,  Bhaskar Srinivasan ,  Ming Zhang

发明人： John Smythe ,  Bhaskar Srinivasan ,  Ming Zhang

IPC分类号： H01L21/26 ,  H01L21/44 ,  H01L21/06

CPC分类号： H01L29/66136 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324 ,  H01L21/823425 ,  H01L21/823814 ,  H01L27/10873 ,  H01L27/24 ,  H01L29/665 ,  H01L29/6659

摘要： Some embodiments include methods in which microwave radiation is used to activate dopant and/or increase crystallinity of semiconductor material during formation of a semiconductor construction. In some embodiments, the microwave radiation has a frequency of about 5.8 gigahertz, and a temperature of the semiconductor construction does not exceed about 500° C. during the exposure to the microwave radiation.

摘要翻译： 一些实施例包括在形成半导体结构期间使用微波辐射来激活掺杂剂和/或增加半导体材料的结晶度的方法。 在一些实施例中，微波辐射具有约5.8千兆赫的频率，并且在暴露于微波辐射期间半导体构造的温度不超过约500℃。

公开(公告)号：US08203179B2

公开(公告)日：2012-06-19

申请号：US12949558

申请日：2010-11-18

申请人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Bhaskar Srinivasan ,  John Smythe

发明人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Bhaskar Srinivasan ,  John Smythe

IPC分类号： H01L29/788

CPC分类号： H01L21/31691 ,  H01L21/28273 ,  H01L21/3142 ,  H01L29/42332 ,  H01L29/7881

摘要： Devices are disclosed, such as those having a memory cell. The memory cell includes an active area formed of a semiconductor material; a first dielectric over the semiconductor material; a second dielectric comprising a material having a perovskite structure over the first dielectric; a third dielectric over the second dielectric; and a gate electrode over the third dielectric.

摘要翻译： 公开了诸如具有存储器单元的器件。 存储单元包括由半导体材料形成的有源区; 半导体材料上的第一电介质; 第二电介质，其包括在所述第一电介质上方具有钙钛矿结构的材料; 在所述第二电介质上的第三电介质; 以及位于第三电介质上的栅电极。

公开(公告)号：US08008162B2

公开(公告)日：2011-08-30

申请号：US12274181

申请日：2008-11-19

申请人： Bhaskar Srinivasan ,  Gurtej S. Sandhu

发明人： Bhaskar Srinivasan ,  Gurtej S. Sandhu

IPC分类号： H01L21/20

CPC分类号： H01L29/88 ,  H01L21/3205 ,  H01L27/1021 ,  Y10S438/957

摘要： Select devices including an open volume that functions as a high bandgap material having a low dielectric constant are disclosed. The open volume may provide a more nonlinear, asymmetric I-V curve and enhanced rectifying behavior in the select devices. The select devices may comprise, for example, a metal-insulator-insulator-metal (MIIM) diode. Various methods may be used to form select devices and memory systems including such select devices. Memory devices and electronic systems include such select devices.

摘要翻译： 公开了包括用作具有低介电常数的高带隙材料的开放体积的装置。 开放体积可以在选择装置中提供更非线性的非对称I-V曲线和增强的整流行为。 选择装置可以包括例如金属 - 绝缘体 - 绝缘体 - 金属（MIIM）二极管。 可以使用各种方法来形成包括这种选择装置的选择装置和存储器系统。 存储器件和电子系统包括这样的选择器件。

公开(公告)号：US07941157B2

公开(公告)日：2011-05-10

申请号：US11274584

申请日：2005-11-15

申请人： Bhaskar Srinivasan ,  Sharmila Ravula

发明人： Bhaskar Srinivasan ,  Sharmila Ravula

IPC分类号： H04W24/00 ,  H04L12/28

CPC分类号： H04L41/12 ,  G01S5/0263 ,  G01S5/0289 ,  H04W64/00 ,  H04W84/18

摘要： A hybrid localization method and a wireless network that performs the method are disclosed herein. In an embodiment of a hybrid localization technique, one or more sensor nodes in the network switch between different localization techniques depending on location area conditions. This technique chooses the most accurate localization technique for the given location area conditions, and thus potentially provides the best possible location accuracy for those conditions. A representative set of simulations and experiments verify the potential performance improvement realized with embodiments of the hybrid localization technique.

摘要翻译： 本文公开了执行该方法的混合定位方法和无线网络。 在混合定位技术的实施例中，网络中的一个或多个传感器节点根据位置区域条件在不同的定位技术之间切换。 该技术为给定的位置区域条件选择最精确的定位技术，因此潜在地为这些条件提供最佳位置精度。 一组代表性的模拟和实验验证了利用混合定位技术的实施方案实现的潜在性能改进。

公开(公告)号：US20110089413A1

公开(公告)日：2011-04-21

申请号：US12580013

申请日：2009-10-15

申请人： Gurtej Sandhu ,  Bhaskar Srinivasan

发明人： Gurtej Sandhu ,  Bhaskar Srinivasan

IPC分类号： H01L29/12 ,  H01L21/329

CPC分类号： H01L29/24 ,  H01L27/24 ,  H01L45/00

摘要： A diode and memory device including the diode, where the diode includes a conductive portion and another portion formed of a first material that has characteristics allowing a first decrease in a resistivity of the material upon application of a voltage to the material, thereby allowing current to flow there through, and has further characteristics allowing a second decrease in the resistivity of the first material in response to an increase in temperature of the first material.

摘要翻译： 包括二极管的二极管和存储器件，其中二极管包括导电部分和由第一材料形成的另一部分，该第一材料具有允许在向材料施加电压时第一次降低材料的电阻率的特性，从而允许电流 流过其中，并且具有允许第一材料的电阻率响应于第一材料的温度升高而第二次降低的特征。

公开(公告)号：US20100315760A1

公开(公告)日：2010-12-16

申请号：US12483474

申请日：2009-06-12

申请人： Rishikesh Krishnan ,  John Smythe ,  Vishwanath Bhat ,  Noel Rocklein ,  Bhaskar Srinivasan ,  Jeff Hully ,  Chris Carlson

发明人： Rishikesh Krishnan ,  John Smythe ,  Vishwanath Bhat ,  Noel Rocklein ,  Bhaskar Srinivasan ,  Jeff Hully ,  Chris Carlson

IPC分类号： H01G4/10

CPC分类号： H01L28/56 ,  H01G4/10 ,  H01L27/108

摘要： Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.

摘要翻译： 公开了形成电容器的电容器和方法，其包括内部导电金属电容器电极和外部导电金属电容器电极。 电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间，并且具有不大于150埃的厚度。 公开了厚度和关系的材料的各种组合，其相互之间可以实现和导致电介质区域的介电常数k至少为35，而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / cm 2 + 1.1V。

公开(公告)号：US20100258903A1

公开(公告)日：2010-10-14

申请号：US12421916

申请日：2009-04-10

申请人： Bhaskar Srinivasan ,  Vassil Antonov ,  John Smythe

发明人： Bhaskar Srinivasan ,  Vassil Antonov ,  John Smythe

IPC分类号： H01L27/10 ,  B05D5/12

CPC分类号： H01L28/75 ,  C23C16/404 ,  C23C16/409 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/56 ,  H01G4/33 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/0228 ,  H01L28/56 ,  H01L28/65

摘要： Strontium ruthenium oxide provides an effective interface between a ruthenium conductor and a strontium titanium oxide dielectric. Formation of the strontium ruthenium oxide includes the use of atomic layer deposition to form strontium oxide and subsequent annealing of the strontium oxide to form the strontium ruthenium oxide. A first atomic layer deposition of strontium oxide is preformed using water as an oxygen source, followed by a subsequent atomic layer deposition of strontium oxide using ozone as an oxygen source.

摘要翻译： 钌氧化钌提供钌导体和锶钛氧化物电介质之间的有效界面。 锶氧化钌的形成包括使用原子层沉积形成氧化锶，随后退火氧化锶以形成氧化锶锶。 使用水作为氧源来进行氧化锶的第一原子层沉积，然后使用臭氧作为氧源，随后用氧化锶沉积氧化锶。