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124 条记录 (耗时 0.034 秒)

    Light-emitting apparatus and fabrication method of the same
    82.
    发明授权
    Light-emitting apparatus and fabrication method of the same 有权
    发光装置及其制造方法

    公开(公告)号：US07453094B2

    公开(公告)日：2008-11-18

    申请号：US10662508

    申请日：2003-09-16

    申请人： Toru Takayama ,  Takuya Tsurume ,  Yuugo Goto

    发明人： Toru Takayama ,  Takuya Tsurume ,  Yuugo Goto

    IPC分类号： H01L27/15

    CPC分类号： H01L51/5253 ,  H01L27/3244 ,  H01L2251/5315

    摘要： The present invention is to use a film containing fluoroplastics that is capable of forming into a lamination as a protective film for protecting a light-emitting device against moisture or gas such as oxygen so as to prevent of deterioration of the light-emitting device easier and improve reliability of the light-emitting device greater than the conventional light-emitting apparatus. In the present invention, another film can be stacked on the film containing fluoroplastics by forming irregularities by means of the surface preparation on the film containing fluoroplastics or by controlling the content of fluoroplastics in the film containing fluoroplastics. In addition, in the case that another film is stacked on the film containing fluoroplastics by controlling the content of fluoroplastics, the content of fluoroplastics can be controlled by means of forming the film containing fluoroplastics by sputtering using sequentially a plurality of targets that has different contents of fluoroplastics and metallic oxides.

    摘要翻译： 本发明是使用含氟塑料的膜，其能够形成层压作为用于保护发光装置免受湿气或气体如氧气的保护膜，以防止发光装置的劣化更容易，以及 提高了发光装置的可靠性，比传统的发光装置大。 在本发明中，通过在包含氟塑料的膜上的表面处理或通过控制含有氟塑料的膜中的氟塑料的含量，通过形成不规则性，可以将另一种膜堆叠在含氟塑料的膜上。 此外，在通过控制氟塑料的含量将另一薄膜堆叠在含有氟塑料的薄膜的情况下，可以通过依次使用具有不同含量的多个靶进行溅射来形成含有氟塑料的薄膜来控制氟塑料的含量 的氟塑料和金属氧化物。

    Method of fabricating semiconductor device and method of processing substrate
    83.
    发明授权
    Method of fabricating semiconductor device and method of processing substrate 失效
    制造半导体器件的方法和处理衬底的方法

    公开(公告)号：US5492843A

    公开(公告)日：1996-02-20

    申请号：US282598

    申请日：1994-07-29

    申请人： Hiroki Adachi ,  Yuugo Goto ,  Hongyong Zhang ,  Toru Takayama

    发明人： Hiroki Adachi ,  Yuugo Goto ,  Hongyong Zhang ,  Toru Takayama

    IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L21/324

    CPC分类号： H01L27/1214 ,  H01L21/02422 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1262 ,  H01L27/1277 ,  H01L29/66757 ,  Y10S148/016 ,  Y10S438/974

    摘要： Method of fabricating a semiconductor device. A glass substrate such as Corning 7059 is used as a substrate. A bottom film is formed. Then, the substrate is annealed above the strain point of the glass substrate. The substrate is then slowly cooled below the strain point. Thereafter, a silicon film is formed, and a TFT is formed. The aforementioned anneal and slow cooling reduce shrinkage of the substrate created in later thermal treatment steps. This makes it easy to perform mask alignments. Furthermore, defects due to misalignment of masks are reduced, and the production yield is enhanced. In another method, a glass substrate made of Corning 7059 is also used as a substrate. The substrate is annealed above the strain point. Then, the substrate is rapidly cooled below the strain point. Thereafter, a bottom film is formed, and a TFT is fabricated. The aforementioned anneal and slow cooling reduce shrinkage of the substrate created in later thermal treatment steps. Thus, less cracks are created in the active layer of the TFT and in the bottom film. This improves the production yield. During heating of the substrate, it is held substantially horizontal to reduce warpage, distortions, and waviness of the substrate.

    摘要翻译： 制造半导体器件的方法 使用诸如Corning 7059的玻璃基板作为基板。 形成底部薄膜。 然后，将基板在玻璃基板的应变点之上退火。 然后将基材缓慢冷却至应变点以下。 之后，形成硅膜，形成TFT。 上述退火和缓慢冷却减少了后续热处理步骤中产生的基板的收缩。 这使得轻松执行掩模对齐。 此外，由于掩模的未对准而导致的缺陷减少，生产率提高。 在另一种方法中，还使用由Corning 7059制成的玻璃基板作为基板。 衬底在应变点之上退火。 然后，将基材快速冷却到应变点以下。 然后，形成底膜，制作TFT。 上述退火和缓慢冷却减少了后续热处理步骤中产生的基板的收缩。 因此，在TFT的有源层和底部膜中产生较少的裂纹。 这提高了产量。 在加热基材期间，其保持基本水平，以减少基材的翘曲，变形和波纹。

    Light-emitting apparatus
    85.
    发明授权
    Light-emitting apparatus 有权
    发光装置

    公开(公告)号：US07268487B2

    公开(公告)日：2007-09-11

    申请号：US10662357

    申请日：2003-09-16

    申请人： Shunpei Yamazaki ,  Toru Takayama ,  Takuya Tsurume ,  Yuugo Goto

    发明人： Shunpei Yamazaki ,  Toru Takayama ,  Takuya Tsurume ,  Yuugo Goto

    IPC分类号： H05B33/12

    CPC分类号： H01L51/529 ,  H01L27/3244 ,  H01L51/5246 ,  H01L51/5253

    摘要： The present invention is to solve the problems of heat release and a metal material corrosion due to fluorine that are arisen in the case of using a film containing fluoroplastics (Teflon®) as a protective film for a light-emitting device. In the present invention, an inorganic film is formed after forming a light-emitting device, and a film containing fluoroplastics is formed thereon for avoiding contact with a metal material for forming the light-emitting device, as a result, a metal material corrosion due to fluorine in the film containing fluoroplastics can be prevented. In addition, the inorganic insulating film has a function of preventing fluorine in the film containing fluoroplastics from reacting to the metal material (barrier property), in addition, the inorganic insulating film is formed of a material having high heat conductivity for releasing heat generated in a light-emitting device.

    摘要翻译： 本发明是为了解决在使用含有氟塑料（Teflon）的膜作为发光元件的保护膜的情况下产生的放热和金属材料腐蚀的问题。 在本发明中，在形成发光装置之后形成无机膜，并且在其上形成含有氟塑料的膜，以避免与用于形成发光装置的金属材料接触，结果导致金属材料腐蚀 可以防止含氟塑料的膜中的氟。 此外，无机绝缘膜具有防止含氟塑料的膜与金属材料反应的氟（阻隔性）的功能，另外，无机绝缘膜由具有高导热性的材料形成，用于释放在 发光装置。

    Semiconductor device
    90.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08227851B2

    公开(公告)日：2012-07-24

    申请号：US12952766

    申请日：2010-11-23

    申请人： Tomoyuki Aoki ,  Koji Dairiki ,  Yuugo Goto

    发明人： Tomoyuki Aoki ,  Koji Dairiki ,  Yuugo Goto

    IPC分类号： H01L27/112

    CPC分类号： H01L27/13 ,  G06K19/07749 ,  H01L21/6835 ,  H01L23/5227 ,  H01L23/552 ,  H01L23/576 ,  H01L23/585 ,  H01L27/105 ,  H01L27/11509 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/1203 ,  H01L27/124 ,  H01L27/1266 ,  H01L29/78618 ,  H01L2221/6835 ,  H01L2221/68368 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/30105 ,  H01Q1/2208 ,  H01L2924/00

    摘要： It is an object of the invention to provide semiconductor devices which can protect privacy of consumers or holders of commercial products and control the communication range according to use, even when the semiconductor device which can exchange data without contact is mounted on the commercial products. A semiconductor device of the invention includes an element group including a plurality of transistors over a substrate; a first conductive film functioning as an antenna over the element group; a second conductive film surrounding the first conductive film; an insulating film covering the first and second end portions; and a third conductive film over the insulating film. The first conductive film is provided in the shape of a coil, and each end portion of the first conductive film is connected to the element group. First and second end portions of the second conductive film are not connected to each other.

    摘要翻译： 本发明的目的是提供可以保护消费者或商业产品持有人的隐私的半导体器件，并且即使当可以将交换数据而没有接触的半导体器件安装在商业产品上时，也可以根据使用来控制通信范围。 本发明的半导体器件包括在衬底上包括多个晶体管的元件组; 用作元件组上的天线的第一导电膜; 围绕所述第一导电膜的第二导电膜; 覆盖所述第一和第二端部的绝缘膜; 和绝缘膜上的第三导电膜。 第一导电膜设置为线圈形状，并且第一导电膜的每个端部连接到元件组。 第二导电膜的第一端部和第二端部彼此不连接。