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公开(公告)号:US12204770B2
公开(公告)日:2025-01-21
申请号:US17730992
申请日:2022-04-27
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Sujeet Ayyapureddi
Abstract: Apparatuses, systems, and methods for managing access to metadata stored at a memory. To manage access to metadata, a mode register is configured to receive a metadata enable setting and to provide a metadata enable signal based on the metadata enable setting. A metadata access control circuit configured to receive a column address identifying a particular column to be accessed within a memory array. The metadata access control circuit blocks access to a column corresponding to the column address when the column address matches one of a plurality of particular column addresses designated for storage of metadata and the metadata enable signal has a first value, and permits access to a column corresponding to the column address when the column address is different than every one of the a plurality of particular column addresses designated for storage of metadata or the metadata enable signal has a second value.
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公开(公告)号:US20240404574A1
公开(公告)日:2024-12-05
申请号:US18678630
申请日:2024-05-30
Applicant: Micron Technology, Inc.
Inventor: Sujeet Ayyapureddi
IPC: G11C11/00 , G11C11/4072 , G11C11/4078 , G11C16/20 , G11C16/22
Abstract: To ensure proper functioning of a memory component, the memory cells may be initialized to a known value before the memory device is used. The known values are termed the “background pattern.” The memory cells may also be reset to the background pattern to scrub data memory for security. Typically, standard write operations are used to write the background pattern. As discussed herein, multiple addresses on a single word line can be written to simultaneously. As also discussed herein, when the same data is written to multiple word lines, the step of copying the data to the sense amplifiers may be performed once instead of repeated for each write command, further reducing the time consumed by writing background patterns to a memory array.
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公开(公告)号:US12160986B2
公开(公告)日:2024-12-03
申请号:US17144300
申请日:2021-01-08
Applicant: Micron Technology, Inc.
Inventor: Sujeet Ayyapureddi
IPC: H01L27/12 , H01L29/786 , H01L49/02 , H10B12/00
Abstract: Systems, methods and apparatus are provided for decoupling capacitors for an array of vertically stacked memory cells. Embodiments provide that the decoupling capacitors are electrically coupled to a power bus.
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公开(公告)号:US20240296095A1
公开(公告)日:2024-09-05
申请号:US18588402
申请日:2024-02-27
Applicant: Micron Technology, Inc.
Inventor: Sujeet Ayyapureddi
IPC: G06F11/10
CPC classification number: G06F11/1076
Abstract: Apparatuses, systems, and methods for read commands with different levels of error correction code (ECC) capability. A memory receives a first type of read command and reads data with a first level of ECC and receives a second type of read command and reads the data with a second level of ECC. For example, single error correction (SEC) may be used as part of the first type of read command and more errors may be detected/corrected as part of the second type of read command. A controller may read data using the first type of read command and if a signal is received indicating that an error was detected may read the data again using the second type of read command.
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公开(公告)号:US12067270B2
公开(公告)日:2024-08-20
申请号:US17946518
申请日:2022-09-16
Applicant: Micron Technology, Inc.
Inventor: Yang Lu , Sujeet Ayyapureddi , Edmund J. Gieske , Cagdas Dirik , Ameen D. Akel , Elliott C. Cooper-Balis , Amitava Majumdar , Robert M. Walker , Danilo Caraccio
IPC: G06F3/06
CPC classification number: G06F3/0632 , G06F3/0604 , G06F3/0679
Abstract: Systems, methods, and apparatus for memory device security and row hammer mitigation are described. A control mechanism may be implemented in a front-end and/or a back-end of a memory sub-system to refresh rows of the memory. A row activation command having a row address at control circuitry of a memory sub-system and incrementing a first count of a row counter corresponding to the row address stored in a content addressable memory (CAM) of the memory sub-system may be received. Control circuitry may determine whether the first count is greater than a row hammer threshold (RHT) minus a second count of a CAM decrease counter (CDC); the second count may be incremented each time the CAM is full. A refresh command to the row address may be issued when a determination is made that the first count is greater than the RHT minus the second count.
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公开(公告)号:US20240248796A1
公开(公告)日:2024-07-25
申请号:US18625539
申请日:2024-04-03
Applicant: Micron Technology, Inc.
Inventor: Sujeet Ayyapureddi
IPC: G06F11/10
CPC classification number: G06F11/106
Abstract: Apparatuses, systems, and methods for per row error correct and scrub (pRECS) information. There may be pRECS information associated with each row, and it may reflect a number of codewords stored along that row which were determined to include an error during error correct and scrub (ECS) operations. The memory may store the pRECS information in the memory array, for example, each row may store the pRECS information associated with that row.
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公开(公告)号:US12014797B2
公开(公告)日:2024-06-18
申请号:US17731024
申请日:2022-04-27
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Sujeet Ayyapureddi
CPC classification number: G11C7/1039 , G06F12/06 , G11C7/1012 , G11C7/1048 , G11C7/1069 , G11C7/1096
Abstract: Apparatuses, systems, and methods for managing storage and retrieval of metadata at a memory. A metadata column address generator, during an metadata access operation, is configured to decode a subset of less than all of the bits of the column address to determine a metadata column address and a metadata column plane address corresponding to a particular one of column planes of a memory array. A column decoder is configured to facilitate a double cycle access operation to write data to or retrieve data from the plurality of column planes based on the column address and to write metadata to or retrieve metadata from a particular column corresponding to the metadata column address of the particular one of the column planes corresponding to the column plane address.
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88.
公开(公告)号:US20240160524A1
公开(公告)日:2024-05-16
申请号:US18504342
申请日:2023-11-08
Applicant: Micron Technology, Inc.
Inventor: Sujeet Ayyapureddi , Scott E. Smith
IPC: G06F11/10
CPC classification number: G06F11/1044
Abstract: Apparatuses, systems, and methods for single-pass access of ECC information, metadata information, or combinations thereof. The memory array includes a number of column planes and an extra column plane. A memory device may be set in an ×4 single-pass operational mode. In this mode, the memory may store data in a selected ones of the column planes, and metadata may be stored in the extra column plane. An error correction code circuit (ECC) may store parity bits associated with the data and metadata in non-selected ones of the column planes. In this manner, the data, metadata, and parity may be accessed as part of a single access of the memory array.
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公开(公告)号:US11915775B2
公开(公告)日:2024-02-27
申请号:US17449297
申请日:2021-09-29
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Jack Riley , Scott Smith , Christian Mohr , Gary Howe , Joshua Alzheimer , Yoshinori Fujiwara , Sujeet Ayyapureddi , Randall Rooney
CPC classification number: G11C29/4401 , G11C29/18 , G11C29/46 , G11C29/76 , G11C29/787 , G11C2029/1202
Abstract: Embodiments of the disclosure are drawn to apparatuses and methods for bad row mode. The memory may prevent proper access operations (e.g., read operations) from being performed on a selected bad row of the memory as part of a bad row mode. For example, the memory may store a bad row address and when an access address matches the bad row address, may suppress one or more signals, change data read from the address, or combinations thereof. The bad row mode may be used to provide a positive control for post package repair (PPR) operations on the memory. A controller may enter the memory into bad row mode and then test the memory to determine if the selected bad row can be located and repaired via PPR.
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公开(公告)号:US20240063794A1
公开(公告)日:2024-02-22
申请号:US17890568
申请日:2022-08-18
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Sujeet Ayyapureddi
IPC: H03K19/00 , H03K19/08 , H03K19/17736
CPC classification number: H03K19/0005 , H03K19/0813 , H03K19/17744
Abstract: Apparatuses, systems, and methods for memory initiated calibration. The memory includes a termination circuit with a tunable resistor and a calibration detection circuit with a replica tunable resistor. The calibration detection circuit measures a resistance of the replica tunable resistor and provides a calibration request signal if the resistance is outside a tolerance. Responsive to the calibration request signal, a controller of the memory schedules the memory for a calibration operation.
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