公开(公告)号：US07709394B2

公开(公告)日：2010-05-04

申请号：US11687738

申请日：2007-03-19

申请人： Hidenori Miyoshi ,  Kenji Ishikawa ,  Yukio Takigawa ,  Yoshihiro Nakata ,  Hideki Tateishi

发明人： Hidenori Miyoshi ,  Kenji Ishikawa ,  Yukio Takigawa ,  Yoshihiro Nakata ,  Hideki Tateishi

IPC分类号： H01L21/302

CPC分类号： H01L21/02063 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826

摘要： A method for processing a substrate having an insulation film and a metal layer thereon comprises the steps of supplying a carboxylic acid anhydride to the substrate, and heating the substrate during the step of supplying the carboxylic acid anhydride to the substrate.

摘要翻译： 一种用于处理具有绝缘膜和金属层的基板的方法，包括以下步骤：向基材供应羧酸酐，并在将羧酸酐供应到基材的步骤期间加热基材。

公开(公告)号：US20090309196A1

公开(公告)日：2009-12-17

申请号：US12545596

申请日：2009-08-21

申请人： Tadahiro Imada ,  Yoshihiro Nakata

发明人： Tadahiro Imada ,  Yoshihiro Nakata

IPC分类号： H01L29/06 ,  C07F7/08 ,  C09D5/00 ,  H05K1/03 ,  H01L21/31

CPC分类号： C09D183/04 ,  C08G77/045 ,  C08G77/26 ,  C08G77/28 ,  C08G77/30 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2224/45144 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/10253 ,  C08L83/00 ,  H01L2924/00 ,  H01L2224/48

摘要： A surface-hydrophobicized film is provided which is in contact with an insulating film, and has a higher hydrophobicity than the insulating film at the time of the contact, and which is in contact, on an opposite side of the surface-hydrophobicized film, with wiring, and contains at least one atom selected from the group consisting of sulfur atoms, phosphorus atoms and nitrogen atoms. Semiconductor devices with wiring layers having a low leakage current, a high EM resistance and a high TDDB resistance can be manufactured by using the film.

摘要翻译： 提供与绝缘膜接触的表面疏水化膜，并且在与表面疏水化膜的相对侧上的接触时接触时具有比绝缘膜更高的疏水性，与 并且含有至少一个选自硫原子，磷原子和氮原子的原子。 通过使用该膜，可以制造具有低漏电流，高电阻电阻和高TDDB电阻的布线层的半导体器件。

公开(公告)号：US20090163039A1

公开(公告)日：2009-06-25

申请号：US12314279

申请日：2008-12-08

申请人： Shirou Ozaki ,  Yoshihiro Nakata ,  Ei Yano

发明人： Shirou Ozaki ,  Yoshihiro Nakata ,  Ei Yano

IPC分类号： H01L21/31

CPC分类号： H01L21/31633 ,  C09D183/14 ,  C09D183/16 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31695

摘要： A method for fabricating a semiconductor device utilizing the step of forming a first insulating film of a porous material over a substrate; the step of forming on the first insulating film a second insulating film containing a silicon compound containing Si—CH3 bonds by 30-90%, and the step of irradiating UV radiation with the second insulating film formed on the first insulating film to cure the first insulating film. Thus, UV radiation having the wavelength which eliminates CH3 groups is sufficiently absorbed by the second insulating film, whereby the first insulating film is highly strengthened with priority by the UV cure, and the first insulating film can have the film density increased without having the dielectric constant increased.

公开(公告)号：US07541296B2

公开(公告)日：2009-06-02

申请号：US11171318

申请日：2005-07-01

申请人： Tamotsu Owada ,  Hirofumi Watatani ,  Yoshihiro Nakata ,  Shirou Ozaki ,  Shun-ichi Fukuyama

发明人： Tamotsu Owada ,  Hirofumi Watatani ,  Yoshihiro Nakata ,  Shirou Ozaki ,  Shun-ichi Fukuyama

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L21/02282 ,  C23C16/45523 ,  C23C16/50 ,  H01L21/02123 ,  H01L21/0234 ,  H01L21/316 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L2224/05

摘要： Disclosed is a method for effectively forming a Low-k insulating film. The method comprises the steps of: spin-coating on an underlying layer a precursor solution formed by dispersing Low-k materials in a solvent to form a coating film, subjecting the coating film to a baking treatment under heating for about several minutes at a temperature near a boiling point of the solvent, forming, on the coating film after the baking treatment, an SiC barrier film using a CVD method, and subjecting the coating film to a hydrogen plasma treatment through the barrier film continuously using the same CVD apparatus as used in forming the barrier film without taking out the coating film from the CVD apparatus.

摘要翻译： 公开了一种有效地形成Low-k绝缘膜的方法。 该方法包括以下步骤：在底层上旋转涂覆通过将低k材料分散在溶剂中而形成涂层膜形成的前体溶液，使涂膜在温度下加热约几分钟的烘烤处理 接近溶剂的沸点，在烘烤处理后的涂膜上形成使用CVD法的SiC阻挡膜，并使用与所使用的相同的CVD装置连续地通过阻挡膜对涂膜进行氢等离子体处理 在不从CVD装置中取出涂膜的情况下形成阻挡膜。

公开(公告)号：US20080314709A1

公开(公告)日：2008-12-25

申请号：US12078198

申请日：2008-03-27

申请人： Keiji Ishikawa ,  Yasuo Tabuchi ,  Michiyasu Nosaka ,  Yoshihiro Nakata ,  Takayuki Suzuki

发明人： Keiji Ishikawa ,  Yasuo Tabuchi ,  Michiyasu Nosaka ,  Yoshihiro Nakata ,  Takayuki Suzuki

IPC分类号： F16D7/00

CPC分类号： F16H55/36 ,  F16D9/08

摘要： A power transmission apparatus comprises a pulley mounted rotatably on a casing of a rotary device, a hub coupled to the pulley by fitting between depressions and protrusions, a power shutoff member for preventing excessive torque between a rotary shaft and the hub, and an engaging device for engaging the hub and the pulley each other. The engaging device includes a first stepped portion formed radially on the outer periphery of the hub and a second stepped portion formed radially on the inner peripheral wall of a rim of the pulley in such a manner as to engage the first stepped portion in the axial direction.

摘要翻译： 动力传递装置包括可旋转地安装在旋转装置的壳体上的皮带轮，通过配合凹陷和突起而联接到滑轮的轮毂，用于防止旋转轴和轮毂之间的过大扭矩的动力切断构件和接合装置 用于将轮毂和滑轮彼此接合。 接合装置包括径向形成在轮毂的外周上的第一台阶部分和径向地形成在轮的轮缘的内周壁上的第二阶梯部分，以使得第一阶梯部分在轴向上接合 。

公开(公告)号：US07235866B2

公开(公告)日：2007-06-26

申请号：US11205128

申请日：2005-08-17

申请人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

发明人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

IPC分类号： H01L23/58 ,  H01L23/48

CPC分类号： C09D183/04 ,  C09D183/16 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76837 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/31663 ,  C08L83/00 ,  H01L2924/00

摘要： A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.

摘要翻译： 低介电膜形成材料含有溶解在溶剂中的硅氧烷树脂和聚碳硅烷。 通过使用该溶液，形成含有与硅氧烷树脂结合的硅氧烷树脂和聚碳硅烷的低电介质膜。 提供了适用于层间绝缘膜材料的低介电膜材料。 还提供了具有低介电常数膜和高可靠性的半导体器件。

公开(公告)号：US07170177B2

公开(公告)日：2007-01-30

申请号：US11115407

申请日：2005-04-27

申请人： Yoshihiro Nakata ,  Katsumi Suzuki ,  Iwao Sugiura ,  Ei Yano

发明人： Yoshihiro Nakata ,  Katsumi Suzuki ,  Iwao Sugiura ,  Ei Yano

IPC分类号： H01L23/48

CPC分类号： H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/00

摘要： A disclosed semiconductor apparatus includes a substrate, a first insulating layer formed on the substrate, the first insulating layer including a Cu wiring part, and a second insulating layer formed on the substrate, the second insulating layer including a Cu via plug part electrically connected to the Cu wiring part. The first insulating layer is a porous insulating film having an elastic modulus of 5 GPa or more and a hardness of 0.6 GPa or more, and the second insulating layer has an elastic modulus of no less than 10 GPa and a hardness no less than 1 GPa.

摘要翻译： 所公开的半导体装置包括基板，形成在基板上的第一绝缘层，包括Cu布线部分的第一绝缘层和形成在基板上的第二绝缘层，第二绝缘层包括Cu经由插塞部分，电连接到 Cu接线部分。 第一绝缘层是具有5GPa以上的弹性模量和0.6GPa以上的硬度的多孔绝缘膜，第二绝缘层的弹性模量不小于10GPa，硬度不小于1GPa 。

公开(公告)号：US20060022357A1

公开(公告)日：2006-02-02

申请号：US11205128

申请日：2005-08-17

申请人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

发明人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

IPC分类号： H01L23/29 ,  H01L21/31

CPC分类号： C09D183/04 ,  C09D183/16 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76837 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/31663 ,  C08L83/00 ,  H01L2924/00

摘要： A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.

公开(公告)号：US06727515B2

公开(公告)日：2004-04-27

申请号：US10102723

申请日：2002-03-22

申请人： Yoshihiro Nakata ,  Katsumi Suzuki ,  Iwao Sugiura ,  Ei Yano

发明人： Yoshihiro Nakata ,  Katsumi Suzuki ,  Iwao Sugiura ,  Ei Yano

IPC分类号： H01L3524

CPC分类号： H01L21/02126 ,  C09D183/14 ,  C09D183/16 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76807 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： Porous insulation films 28, 40, 50 are formed of an insulation forming material including a silicon compound having a skeleton containing C—C bonds, a pore forming compound which is decomposed or evaporated by a heat treatment, and a solvent which dissolves the silicon compound with the pore forming compound, whereby the porous insulation film can have good mechanical strength and low dielectric constant.

摘要翻译： 多孔绝缘膜28,40,50由包含具有含有CC键的骨架的硅化合物，通过热处理分解或蒸发的成孔化合物的绝缘形成材料和溶解硅化合物的溶剂形成， 多孔绝缘膜可以具有良好的机械强度和低介电常数。

公开(公告)号：US06613834B2

公开(公告)日：2003-09-02

申请号：US09797865

申请日：2001-03-05

申请人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

发明人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

IPC分类号： C08L8304

CPC分类号： C09D183/04 ,  C09D183/16 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76837 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/31663 ,  C08L83/00 ,  H01L2924/00

摘要： A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.