公开(公告)号：US07837791B2

公开(公告)日：2010-11-23

申请号：US12153726

申请日：2008-05-23

申请人： Hiroki Murakami ,  Masahiko Okui ,  Hiroshi Asano

发明人： Hiroki Murakami ,  Masahiko Okui ,  Hiroshi Asano

IPC分类号： C30B15/22

CPC分类号： C30B29/06 ,  C30B15/203

摘要： A silicon single crystal wafer for a particle monitor is presented, which wafer has an extremely small amount in the surface density of light point defects and is capable of still maintaining a small surface density even after repeating the SC-1. The wafer is prepared by slicing a silicon single crystal ingot including an area in which crystal originated particles are generated, and the surface density of particles having a size of not less than 0.12 mum is not more than 15 counts/cm2 after repeating the SC-1. More preferably, a silicon single crystal wafer having a nitrogen concentration of 1×1013 1×1015 atoms/cm3 provides a surface density of not more than 1 counts/cm2 for the particles having a diameter of not less than 0.12 mum even after repeating the SC-1. Hence, a high quality wafer optimally used for a particle monitor can be obtained and a very small number of defects in the wafer make it possible to produce devices.

摘要翻译： 提出了一种用于粒子监测器的硅单晶晶片，该晶片在光点缺陷的表面密度中具有非常小的量，并且即使在重复SC-1之后也能够保持较小的表面密度。 通过对包含产生结晶起始粒子的区域的硅单晶锭进行切片来制作晶片，并且在重复SC-层之后，尺寸不小于0.12μm的颗粒的表面密度不超过15个计数/ cm 2， 1。 更优选的是，氮浓度为1×1013×1015原子/ cm3的硅单晶晶片，即使重复使用了直径不小于0.12μm的颗粒，表面密度也不超过1个/ cm 2 SC-1。 因此，可以获得最佳地用于粒子监测器的高品质晶片，并且晶片中的非常少量的缺陷使得可以生产器件。

公开(公告)号：US20100007244A1

公开(公告)日：2010-01-14

申请号：US12497758

申请日：2009-07-06

申请人： Katsumi Fujimoto ,  Hiroshi Asano

发明人： Katsumi Fujimoto ,  Hiroshi Asano

IPC分类号： H02N2/12 ,  H02N2/14 ,  H01L41/22

CPC分类号： H02N2/163 ,  H02N2/22 ,  Y10T29/42

摘要： A piezoelectric motor that includes a rotor and a stator having a surface on which a driving member that is in contact with the rotor for rotating the rotor is disposed. The stator includes a stator body, a plurality of piezoelectric elements disposed on a surface of the stator body, and an electrode wiring plate integrally formed with the stator body. The piezoelectric elements are electrically connected to a plurality of electrodes formed on the electrode wiring plate through a plurality of wiring lines. The wiring lines are constituted by an electroconductive film extending from a surface of the stator body to the electrodes.

摘要翻译： 一种压电马达，其包括转子和定子，所述定子具有表面，与所述转子接触的驱动构件设置在所述表面上，用于旋转所述转子。 定子包括定子体，设置在定子体的表面上的多个压电元件和与定子体一体形成的电极配线板。 压电元件通过多条布线与形成在电极布线板上的多个电极电连接。 布线由从定子体的表面延伸到电极的导电膜构成。

公开(公告)号：USD594669S1

公开(公告)日：2009-06-23

申请号：US29331864

申请日：2009-02-03

申请人： Hiroshi Asano

设计人： Hiroshi Asano

公开(公告)号：US20080265205A1

公开(公告)日：2008-10-30

申请号：US12065419

申请日：2006-09-01

申请人： Junhui Oh ,  Hiroshi Asano ,  Katsunobu Hori

发明人： Junhui Oh ,  Hiroshi Asano ,  Katsunobu Hori

IPC分类号： C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/3212

摘要： A polishing composition contains a protective film forming agent, an oxidant, and an etching agent. The protective film forming agent includes at least one type of compound selected from benzotriazole and a benzotriazole derivative and at least one type of compound selected from the compounds represented by the general formula ROR′COOH and a general formula ROR′OPO3H2 where R represents an alkyl group or an alkylphenyl group, R′ represents a polyoxyethylene group, polyoxypropylene group, or poly(oxyethylene/oxypropylene) group. The pH of the polishing composition is 8 or more. The polishing composition is suitably used in polishing for forming wiring of a semiconductor device.

摘要翻译： 抛光组合物含有保护膜形成剂，氧化剂和蚀刻剂。 保护膜形成剂包括选自苯并三唑和苯并三唑衍生物中的至少一种化合物和选自由通式ROR'COOH表示的化合物和通式ROR'OPO 3的至少一种化合物， 其中R表示烷基或烷基苯基，R'表示聚氧乙烯基，聚氧丙烯基或聚（氧乙烯/氧丙烯）基。 抛光组合物的pH为8以上。 抛光组合物适合用于形成半导体器件的布线的抛光。

公开(公告)号：US20080257472A1

公开(公告)日：2008-10-23

申请号：US11955809

申请日：2007-12-13

申请人： Hiroshi Asano

发明人： Hiroshi Asano

IPC分类号： H01B13/32

CPC分类号： C04B37/006 ,  B32B18/00 ,  B32B2311/08 ,  B32B2311/09 ,  C04B35/472 ,  C04B35/491 ,  C04B35/493 ,  C04B37/021 ,  C04B41/80 ,  C04B2235/3227 ,  C04B2235/3251 ,  C04B2235/3267 ,  C04B2235/3272 ,  C04B2235/656 ,  C04B2237/346 ,  C04B2237/348 ,  C04B2237/40 ,  C04B2237/408 ,  C04B2237/704 ,  C04B2237/706 ,  H05K1/0306 ,  H05K3/0011 ,  H05K3/0097 ,  H05K3/1291 ,  H05K2201/0191 ,  H05K2203/1126 ,  H05K2203/1536 ,  Y10T156/1105 ,  Y10T156/1111

摘要： In a method for manufacturing ceramic plates, a Pd paste which does not diffuse into ceramic is formed in a metal paste forming step; metal films each having a thickness such that ceramic layers to be formed after firing are not connected to each other in the lamination direction are formed on surfaces of ceramic green sheets using the Pd paste in a metal film forming step; following a laminate forming step, a firing treatment at a firing temperature, which is a high temperature at which no glass component remains on surfaces of the ceramic layers after the firing and which is equal to or lower than a decomposition temperature of a ceramic material forming the ceramic layers, is performed for a laminate in a firing step; oxygen present at the interfaces between the ceramic layers and the metal layers is removed by immersing a sintered body in n-butyl alcohol in a separation step so as to separate the ceramic layers and the metal layers. Accordingly, ceramic plates having a very small thickness can be manufactured without causing any damage thereto and with high efficiency and can be easily applied to laminate type electronic components.

摘要翻译： 在陶瓷板的制造方法中，在金属糊剂形成工序中形成不扩散到陶瓷中的Pd糊料， 在金属膜形成工序中，使用Pd膏在陶瓷生片的表面上形成均匀的厚度的烧成后的陶瓷层在层叠方向上不连接的厚度的金属膜， 在层叠形成工序之后，在烧成温度下进行烧成温度的烧成处理，该烧成温度是烧成后的陶瓷层的表面上不残留有玻璃成分的高温，其等于或低于形成陶瓷材料的分解温度 在烧成工序中对层叠体进行陶瓷层的制造; 通过在分离步骤中将烧结体浸渍在正丁醇中以分离陶瓷层和金属层来除去存在于陶瓷层和金属层之间的界面处的氧。 因此，可以制造具有非常小的厚度的陶瓷板，而不会对其造成任何损害并且高效率并且可以容易地应用于层压型电子部件。

公开(公告)号：US20080236476A1

公开(公告)日：2008-10-02

申请号：US12153726

申请日：2008-05-23

申请人： Hiroki Murakami ,  Masahiko Okui ,  Hiroshi Asano

发明人： Hiroki Murakami ,  Masahiko Okui ,  Hiroshi Asano

IPC分类号： C30B15/00

CPC分类号： C30B29/06 ,  C30B15/203

摘要： A silicon single crystal wafer for a particle monitor is presented, which wafer has an extremely small amount in the surface density of light point defects and is capable of still maintaining a small surface density even after repeating the SC-1. The wafer is prepared by slicing a silicon single crystal ingot including an area in which crystal originated particles are generated, and the surface density of particles having a size of not less than 0.12 mum is not more than 15 counts/cm2 after repeating the SC-1. More preferably, a silicon single crystal wafer having a nitrogen concentration of 1×1013 1×1015 atoms/cm3 provides a surface density of not more than 1 counts/cm2 for the particles having a diameter of not less than 0.12 mum even after repeating the SC-1. Hence, a high quality wafer optimally used for a particle monitor can be obtained and a very small number of defects in the wafer make it possible to produce devices.

摘要翻译： 提出了一种用于粒子监测器的硅单晶晶片，该晶片在光点缺陷的表面密度中具有非常小的量，并且即使在重复SC-1之后也能够保持较小的表面密度。 通过对包括产生结晶起始粒子的区域的硅单晶锭进行切片来制作晶片，并且尺寸不小于0.12μm的颗粒的表面密度不超过15个/ cm 2， / SUP>重复SC-1。 更优选地，氮浓度为1×10 13/15 15原子/ cm 3的硅单晶晶片提供不超过1×10 15原子/ cm 3的表面密度 即使在重复SC-1之后，直径不小于0.12μm的颗粒的1个计数/ cm 2。 因此，可以获得最佳地用于粒子监测器的高品质晶片，并且晶片中的非常少量的缺陷使得可以生产器件。

公开(公告)号：US20050204849A1

公开(公告)日：2005-09-22

申请号：US11069548

申请日：2005-03-02

申请人： Hideo Yamamoto ,  Hiroshi Asano

发明人： Hideo Yamamoto ,  Hiroshi Asano

IPC分类号： B25J19/00 ,  A01K89/02 ,  B25J9/10

CPC分类号： B25J9/101 ,  Y10T74/20305 ,  Y10T74/2063

摘要： A mechanical stopper offering a relative rotation range exceeding 360°, scarcely generating abrasion powder and the like and having a simple structure is provided. In the stopper apparatus, provided in a rotation axis section wherein a relative rotation is carried out between two members 2 and 4 around one rotation axis 3, for restricting the rotation angle of one member 4 with respect to the other member 2, a contact piece 26 is provided on the above-mentioned one member 4, two support members 22 and 23 are provided standing on the above-mentioned other member 2 with a clearance therebetween, a band-shaped elastic member 24 is layed across between the above-mentioned two support members 22 and 23, and the contact piece 26 is made contact with the elastic member 24 to stop the rotation of the one member 4.

摘要翻译： 提供相对旋转范围超过360°的机械塞子，几乎不产生磨耗粉末等并且具有简单的结构。 在止动装置中，设置在围绕一个旋转轴线3的两个构件2和4之间进行相对旋转的旋转轴部分中，用于限制一个构件4相对于另一个构件2的旋转角度， 如图26所示，在上述一个构件4上设置有两个支撑构件22和23，两个支撑构件22和23设置在上述另一构件2上，间隙为间隙，带状弹性构件24横跨上述两个 支撑构件22和23，并且接触片26与弹性构件24接触以停止一个构件4的旋转。

公开(公告)号：US06838016B2

公开(公告)日：2005-01-04

申请号：US09985490

申请日：2001-11-05

申请人： Kenji Sakai ,  Hiroshi Asano ,  Tadahiro Kitamura ,  Koji Ohno ,  Katsuyoshi Ina

发明人： Kenji Sakai ,  Hiroshi Asano ,  Tadahiro Kitamura ,  Koji Ohno ,  Katsuyoshi Ina

IPC分类号： B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/321 ,  H01L21/768 ,  C09K13/00 ,  C09K13/06 ,  H01L21/302

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/7684

摘要： A polishing composition comprising the following components (a) to (g): (a) an abrasive which is at least one member selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide and titanium oxide, (b) a polyalkyleneimine, (c) at least one member selected from the group consisting of guinaldic acid and its derivatives, (d) at least one member selected from the group consisting of glycine, α-alanine, histidine and their derivatives, (e) at least one member selected from the group consisting of benzotriazole and its derivatives, (f) hydrogen peroxide, and (g) water.

摘要翻译： 一种抛光组合物，其包含以下组分（a）至（g）：（a）至少一种选自二氧化硅，氧化铝，氧化铈，氧化锆和氧化钛的组分的研磨剂，（b） 聚亚烷基亚胺，（c）选自桂皮酸及其衍生物的至少一种，（d）选自甘氨酸，α-丙氨酸，组氨酸及其衍生物中的至少一种，（e） 选自苯并三唑及其衍生物的组中的至少一种，（f）过氧化氢和（g）水。

公开(公告)号：US06767400B2

公开(公告)日：2004-07-27

申请号：US10130671

申请日：2002-09-24

申请人： Takayuki Kubo ,  Fumio Kawahigashi ,  Hiroshi Asano ,  Shinichiro Miki ,  Manabu Nishimoto

发明人： Takayuki Kubo ,  Fumio Kawahigashi ,  Hiroshi Asano ,  Shinichiro Miki ,  Manabu Nishimoto

IPC分类号： C30B1520

CPC分类号： C30B15/14 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： In the CZ process using a cooling member surrounding a single crystal, the cooling member is permitted to effectively serve to increase a pulling speed. Cracks of the single crystal due to excessive cooling are prevented to occur. A high crystal quality is acquired. In order to realize these objects, the temperature of the inner peripheral surface of the cooling member 6 opposing to the outer peripheral surface of the single crystal 4 is restricted to 500° C. or below, even in the lower end, the temperature of which becomes the highest. To achieve this restriction, the thickness T of the cooling member 5 is 10 to 50 mm. The height H of the cooling member 6 is 0.1 to 1.5 times the diameter D of the single crystal 4.

摘要翻译： 在使用围绕单晶的冷却构件的CZ工艺中，允许冷却构件有效地用于增加拉制速度。 防止由于过度冷却导致的单晶的裂纹发生。 获得高质量的晶体。 为了实现这些目的，与单晶4的外周面相对的冷却部件6的内周面的温度即使在下端也被限制在500℃以下，其温度 成为最高的。 为了达到上述限制，冷却部件5的厚度T为10〜50mm。 冷却部件6的高度H为单晶4的直径D的0.1〜1.5倍。

公开(公告)号：US06740160B2

公开(公告)日：2004-05-25

申请号：US10105634

申请日：2002-03-26

申请人： Takayuki Kubo ,  Hiroshi Asano ,  Fumio Kawahigashi ,  Akira Tsujino

发明人： Takayuki Kubo ,  Hiroshi Asano ,  Fumio Kawahigashi ,  Akira Tsujino

IPC分类号： C30B3500

CPC分类号： C30B15/14 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： In a high rate pulling with a cooler 10 surrounding a single crystal 8, steam explosion by leakage from the cooler 10 is prevented. Flow rates La, Lb of cooling water are measured by flowmeters 14a, 14b on a cooling water inflow side and cooling water outflow side of the cooler 10. When flow rate difference &Dgr;L (La−Lb) determined from the flow rates La, Lb exceeds 20 cc/minute, open/close valves 15a, 15b, 15c are operated to stop water supply to the cooler 10 and drain outward the cooing water in the cooler 10.

摘要翻译： 在围绕单晶8的冷却器10的高速率牵引中，防止从冷却器10泄漏的蒸汽爆炸。 通过冷却水流入侧的流量计14a，14b和冷却器10的冷却水流出侧测量冷却水的流量La，Lb。当根据流量La，Lb求出的流量差ΔL（La-Lb）超过 操作20cc /分钟，打开/关闭阀门15a，15b，15c停止向冷却器10供水并向外排出冷却器10中的冷却水。