公开(公告)号：US06838016B2

公开(公告)日：2005-01-04

申请号：US09985490

申请日：2001-11-05

申请人： Kenji Sakai ,  Hiroshi Asano ,  Tadahiro Kitamura ,  Koji Ohno ,  Katsuyoshi Ina

发明人： Kenji Sakai ,  Hiroshi Asano ,  Tadahiro Kitamura ,  Koji Ohno ,  Katsuyoshi Ina

IPC分类号： B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/321 ,  H01L21/768 ,  C09K13/00 ,  C09K13/06 ,  H01L21/302

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/7684

摘要： A polishing composition comprising the following components (a) to (g): (a) an abrasive which is at least one member selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide and titanium oxide, (b) a polyalkyleneimine, (c) at least one member selected from the group consisting of guinaldic acid and its derivatives, (d) at least one member selected from the group consisting of glycine, α-alanine, histidine and their derivatives, (e) at least one member selected from the group consisting of benzotriazole and its derivatives, (f) hydrogen peroxide, and (g) water.

摘要翻译： 一种抛光组合物，其包含以下组分（a）至（g）：（a）至少一种选自二氧化硅，氧化铝，氧化铈，氧化锆和氧化钛的组分的研磨剂，（b） 聚亚烷基亚胺，（c）选自桂皮酸及其衍生物的至少一种，（d）选自甘氨酸，α-丙氨酸，组氨酸及其衍生物中的至少一种，（e） 选自苯并三唑及其衍生物的组中的至少一种，（f）过氧化氢和（g）水。

公开(公告)号：US06440186B1

公开(公告)日：2002-08-27

申请号：US09928996

申请日：2001-08-15

申请人： Kenji Sakai ,  Hiroshi Asano ,  Tadahiro Kitamura ,  Katsuyoshi Ina

发明人： Kenji Sakai ,  Hiroshi Asano ,  Tadahiro Kitamura ,  Katsuyoshi Ina

IPC分类号： C09G102

CPC分类号： C09K3/1463 ,  C09G1/02 ,  C09K3/1409 ,  C23F3/06

摘要： A polishing composition comprising: (a) an abrasives (b) a compound to form a chelate with copper ions (c) a compound to provide a protective layer-forming function to a copper layer, (d) hydrogen peroxide, and (e) water, wherein the abrasive of component (a) has a primary particle size within a range of from 50 to 120 nm.

摘要翻译： 一种抛光组合物，包括：（a）研磨剂（b）与铜离子形成螯合物的化合物（c）向铜层提供保护层形成功能的化合物，（d）过氧化氢，和（e） 水，其中组分（a）的研磨剂的初级粒度在50至120nm的范围内。

公开(公告)号：US06773476B2

公开(公告)日：2004-08-10

申请号：US10200173

申请日：2002-07-23

申请人： Kenji Sakai ,  Kazusei Tamai ,  Tadahiro Kitamura ,  Tsuyoshi Matsuda ,  Katsuyoshi Ina

发明人： Kenji Sakai ,  Kazusei Tamai ,  Tadahiro Kitamura ,  Tsuyoshi Matsuda ,  Katsuyoshi Ina

IPC分类号： C09G102

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  C23F3/06

摘要： A polishing composition comprising: (a) at least one abrasive selected from the group consisting of silicon dioxide and aluminum oxide, (b) at least one organic compound selected from the group consisting of a polyethylene oxide, a polypropylene oxide, a polyoxyethylene alkyl ether, a polyoxypropylene alkyl ether, a polyoxyethylenepolyoxypropylene alkyl ether and a polyoxyalkylene addition polymer having a C≡C triple bond, represented by the formula (1): wherein each of R1 to R6 is H or a C1-10 alkyl group, each of X and Y is an ethyleneoxy group or a propyleneoxy group, and each of m and n is a positive number of from 1 to 20, (c) at least one polishing accelerating compound selected from the group consisting of citric acid, oxalic acid, tartaric acid, glycine, &agr;-alanine and histidine, (d) at least one anticorrosive selected from the group consisting of benzotriazole, benzimidazole, triazole, imidazole and tolyltriazole, (e) hydrogen peroxide, and (f) water.

摘要翻译： 一种抛光组合物，其包含：（a）至少一种选自二氧化硅和氧化铝的研磨剂，（b）至少一种选自聚环氧乙烷，聚环氧丙烷，聚氧乙烯烷基醚 ，聚氧亚丙基烷基醚，聚氧乙烯聚氧丙烯烷基醚和具有C = C三键的聚氧化烯加成聚合物，由式（1）表示：其中R 1至R 6各自为H或C 1-10烷基，X Y是乙烯氧基或丙烯氧基，m和n分别为1〜20的正数，（c）至少一种选自柠檬酸，草酸，酒石酸 ，甘氨酸，α-丙氨酸和组氨酸，（d）至少一种选自苯并三唑，苯并咪唑，三唑，咪唑和甲苯基三唑的防腐剂，（e）过氧化氢和（f）水。

公开(公告)号：US06814766B2

公开(公告)日：2004-11-09

申请号：US10214176

申请日：2002-08-08

申请人： Koji Ohno ,  Kenji Sakai ,  Katsuyoshi Ina

发明人： Koji Ohno ,  Kenji Sakai ,  Katsuyoshi Ina

IPC分类号： C09G102

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C23F3/06 ,  H01L21/3212

摘要： A polishing composition for polishing a semiconductor device having at least a tungsten film and an insulating film, which comprises the following components (a) to (d): (a) silicon dioxide, (b) periodic acid, (c) at least one pH controlling agent selected from the group consisting of ammonia, potassium hydroxide, sodium hydroxide, ammonium periodate, potassium periodate and sodium periodate, and (d) water.

摘要翻译： 一种用于研磨至少具有钨膜和绝缘膜的半导体器件的抛光组合物，其包含以下组分（a）至（d）：（a）二氧化硅，（b）高碘酸，（c）至少一种 选自氨，氢氧化钾，氢氧化钠，高碘酸铵，高碘酸钾和高碘酸钠的pH控制剂，和（d）水。

公开(公告)号：US07189684B2

公开(公告)日：2007-03-13

申请号：US10476717

申请日：2003-03-04

申请人： Koji Ohno ,  Chiyo Horikawa ,  Kenji Sakai ,  Kazusei Tamai ,  Katsuyoshi Ina

发明人： Koji Ohno ,  Chiyo Horikawa ,  Kenji Sakai ,  Kazusei Tamai ,  Katsuyoshi Ina

IPC分类号： C09K13/00

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463

摘要： A polishing composition capable of satisfactorily polishing a semiconductor. The first polishing composition of the present invention includes silicon dioxide, at least one component selected from periodic acids and salts thereof, at least one component selected from tetraalkyl ammonium hydroxides and tetraalkyl ammonium chlorides, hydrochloric acid, and water, and contains substantially no iron. The second polishing composition of the present invention includes a predetermined amount of fumed silica, a predetermined amount of at least one component selected from periodic acids and salts thereof, a tetraalkyl ammonium salt represented by the following general formula (1), at least one component selected from ethylene glycol and propylene glycol, and water. The pH of the second polishing composition is greater than or equal to 1.8 and is less than 4.0.

摘要翻译： 能够令人满意地研磨半导体的抛光组合物。 本发明的第一种抛光组合物包括二氧化硅，选自周期酸及其盐中的至少一种组分，至少一种选自四烷基氢氧化铵和四烷基氯化铵的组分，盐酸和水，并且基本上不含铁。 本发明的第二抛光组合物包含预定量的热解法二氧化硅，预定量的选自周期酸及其盐中的至少一种组分，由以下通式（1）表示的四烷基铵盐，至少一种组分 选自乙二醇和丙二醇，和水。 第二抛光组合物的pH值大于或等于1.8，小于4.0。

公开(公告)号：US06849099B2

公开(公告)日：2005-02-01

申请号：US10674318

申请日：2003-09-30

申请人： Koji Ohno ,  Chiyo Horikawa ,  Kenji Sakai ,  Katsuyoshi Ina

发明人： Koji Ohno ,  Chiyo Horikawa ,  Kenji Sakai ,  Katsuyoshi Ina

IPC分类号： B24B37/00 ,  C09C1/68 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/321 ,  C09G1/04

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/3212

摘要： There is provided a polishing composition that reduces erosion and is used in a final polishing step of a semiconductor device manufacturing process. The polishing composition contains colloidal silica, a periodic acid compound, ammonia, ammonium nitrate and water and its pH is 1.8 to 4.0.

摘要翻译： 提供了减少腐蚀并用于半导体器件制造工艺的最终抛光步骤中的抛光组合物。 抛光组合物含有胶体二氧化硅，高碘酸化合物，氨，硝酸铵和水，其pH为1.8〜4.0。

公开(公告)号：US06679929B2

公开(公告)日：2004-01-20

申请号：US10046394

申请日：2002-01-16

申请人： Hiroshi Asano ,  Kenji Sakai ,  Katsuyoshi Ina

发明人： Hiroshi Asano ,  Kenji Sakai ,  Katsuyoshi Ina

IPC分类号： C09G102

CPC分类号： C09G1/02 ,  H01L21/3212

摘要： A polishing composition comprising the following components (a) to (g): (a) at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide and titanium oxide, (b) an aliphatic carboxylic acid, (c) at least one basic compound selected from the group consisting of an ammonium salt, an alkali metal salt, an alkaline earth metal salt, an organic amine compound and a quaternary ammonium salt, (d) at least one polishing accelerating compound selected from the group consisting of citric acid, oxalic acid, tartaric acid, glycine, &agr;-alanine and histidine, (e) at least one anticorrosive selected from the group consisting of benzotriazole, benzimidazole, triazole, imidazole and tolyltriazole, (f) hydrogen peroxide, and (g) water.

摘要翻译： 一种抛光组合物，其包含以下组分（a）至（g）：（a）至少一种选自二氧化硅，氧化铝，氧化铈，氧化锆和氧化钛的研磨剂，（b）脂族羧酸 ，（c）至少一种选自铵盐，碱金属盐，碱土金属盐，有机胺化合物和季铵盐的碱性化合物，（d）至少一种选择的研磨加速化合物 来自由柠檬酸，草酸，酒石酸，甘氨酸，α-丙氨酸和组氨酸组成的组，（e）至少一种选自苯并三唑，苯并咪唑，三唑，咪唑和甲苯基三唑的防腐剂，（f）过氧化氢 ，（g）水。

公开(公告)号：US06565619B1

公开(公告)日：2003-05-20

申请号：US10263846

申请日：2002-10-04

申请人： Hiroshi Asano ,  Kenji Sakai ,  Katsuyoshi Ina

发明人： Hiroshi Asano ,  Kenji Sakai ,  Katsuyoshi Ina

IPC分类号： C09K314

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/3212

摘要： A polishing composition comprising: (a) colloidal silica having a positively charged surface, (b) colloidal silica having a negatively charged surface, (c) at least one acid selected from the group consisting of nitric acid, hydrochloric acid, sulfuric acid, lactic acid, acetic acid, oxalic acid, citric acid, malic acid, succinic acid, butyric acid and malonic acid, (d) at least one anticorrosive selected from the group consisting of benzotriazole, benzimidazole, triazole, imidazole, tolyltriazole and their derivatives, and (e) water.

摘要翻译： 1.一种抛光组合物，其特征在于，具有：（a）具有带正电荷的表面的胶体二氧化硅，（b）具有带负电荷的表面的胶体二氧化硅，（c）至少一种选自硝酸，盐酸，硫酸，乳酸 酸，乙酸，草酸，柠檬酸，苹果酸，琥珀酸，丁酸和丙二酸，（d）至少一种选自苯并三唑，苯并咪唑，三唑，咪唑，甲苯基三唑及其衍生物的防腐剂，以及 （e）水。

公开(公告)号：US06797626B2

公开(公告)日：2004-09-28

申请号：US10331070

申请日：2002-12-27

申请人： Noriko Miyairi ,  Yasuo Inada ,  Tsuyoshi Hasegawa ,  Yuji Terashima ,  Kenji Sakai ,  Tadahiro Kitamura ,  Takahiro Umeda

发明人： Noriko Miyairi ,  Yasuo Inada ,  Tsuyoshi Hasegawa ,  Yuji Terashima ,  Kenji Sakai ,  Tadahiro Kitamura ,  Takahiro Umeda

IPC分类号： H01L21302

CPC分类号： B24B37/30 ,  C09G1/02 ,  H01L21/3212 ,  H05K3/26 ,  H05K3/383 ,  H05K3/4644 ,  H05K2203/025 ,  H05K2203/121

摘要： The method of polishing a copper layer of a substrate is capable of improving a stock removal rate, etc. The method comprises the steps of: supplying a substrate onto an polishing pad of an polishing plate with a copper layer facing the polishing pad; pressing the substrate onto the polishing pad, with a backing pad, by a press head; relatively rotating the press head with respect to the polishing plate, with supplying polishing slurry onto the polishing pad. The backing pad is made of a material whose Asker C hardness is 75-95 and whose compressibility is 10% or less. The polishing slurry includes a chelating agent for chelating copper, an etching agent for etching the surface of copper layer, an oxidizing agent for oxidizing the surface of copper layer, and water.

摘要翻译： 抛光基板的铜层的方法能够提高原料去除率等。该方法包括以下步骤：将基板供给到具有面向抛光垫的铜层的抛光板的抛光垫上; 用衬垫将衬底用衬垫压入抛光垫上; 相对于抛光板相对地旋转压头，同时将抛光浆料供应到抛光垫上。 衬垫由Asker C硬度为75-95且压缩率为10％以下的材料制成。 抛光浆料包括用于螯合铜的螯合剂，用于蚀刻铜层表面的蚀刻剂，用于氧化铜层表面的氧化剂和水。

公开(公告)号：US08779830B2

公开(公告)日：2014-07-15

申请号：US13802576

申请日：2013-03-13

申请人： Takaki Nakashima ,  Motoki Imanishi ,  Kenji Sakai

发明人： Takaki Nakashima ,  Motoki Imanishi ,  Kenji Sakai

IPC分类号： H03L5/00

CPC分类号： H03K17/063 ,  H03K2217/0063

摘要： A voltage conversion mask signal generation circuit generates a first main signal and a first mask signal by converting an output signal of the first transistor to a low-side voltage, and generating a second main signal and a second mask signal by converting an output signal of the second transistor to a low-side voltage. A mask signal generation circuit generating a third mask signal with higher sensitivity than the first and second mask signals with respect to a fluctuation in the high-side reference potential. A mask logical circuit generating a fourth mask signal by performing a AND operation between the first mask signal and the second mask signal, and masking the first and second main signals with the third and fourth mask signals; and a SR flip flop circuit generating the output signal from the masked first and second main signals.

摘要翻译： 电压转换掩模信号产生电路通过将第一晶体管的输出信号转换为低侧电压来产生第一主信号和第一屏蔽信号，并且通过将第一主信号和第二屏蔽信号的输出信号 第二晶体管为低端电压。 掩模信号生成电路相对于高侧基准电位的波动产生比第一和第二掩模信号高的灵敏度的第三掩模信号。 一种掩模逻辑电路，通过在第一屏蔽信号和第二屏蔽信号之间执行“与”运算，并用第三和第四屏蔽信号屏蔽第一和第二主信号来产生第四屏蔽信号; 以及SR触发器电路，从被掩蔽的第一和第二主信号产生输出信号。