摘要:
A projection optical unit for a projection display apparatus, which displays an image upon a projection surface, obliquely, includes a front lens group disposed in a direction from an image display element to a projection surface, a rear lens group, and a reflection mirror formed so that a curvature of a portion for reflecting a light beam incident upon a lower end portion of the projection surface is larger than a curvature of a portion for reflecting a light beam incident upon an upper end of the projection surface. An optical axis of the front lens group and the rear lens group is more inclined with respect to a direction of the portion of the reflection mirror for reflecting the light beam incident upon the lower end portion of the projection surface than a normal line direction of the image display element.
摘要:
An object of the invention is to carry out the flux method with improved work efficiency while maintaining the purity of flux at high level and saving flux material cost. The sodium-purifying apparatus includes a sodium-holding-and-management apparatus for maintaining purified sodium (Na) in a liquid state. Liquid sodium is supplied into a sodium-holding-and-management apparatus through a liquid-sodium supply piping maintained at 100° C. to 200° C. The sodium-holding-and-management apparatus further has an argon-gas-purifying apparatus for controlling the condition of argon (Ar) gas that fills the internal space thereof. Thus, by opening and closing a faucet at desired timing, purified liquid sodium (Na) supplied from the sodium-purifying apparatus can be introduced into a crucible as appropriate via the liquid-sodium supply piping, the sodium-holding-and-management apparatus, and the piping.
摘要:
A projection-type display apparatus, comprises a front lens group having a plural number of lenses, each having rotationally symmetric surface configuration, a rear lens group, being disposed in rear of the front lens group, including a refractive lens for diverting a light and having a rotationally symmetric surface configuration, and a plural number of free curved surface lenses, each having a rotationally asymmetric free curved surface configuration, and a reflection mirror, being disposed in rear of the rear lens group, having a convex configuration into a direction of reflection of light and a rotationally asymmetric free curved surface configuration, at least in a part thereof.
摘要:
A projection display is capable of suppressing both the trapezoidal distortion of an enlarged image projected on a screen by oblique projection and aberrations resulting from oblique projection and includes a projection optical system provided with lenses that can be easily manufactured and assembled. The projection optical system for obliquely projecting an image formed by a display device on the screen includes a free curved lens having a rotationally asymmetric free curved surface. The free curved lens has fringing parts having outlines of a shape coinciding with an arc of a circle having the center on the optical axis of the free curved lens.
摘要:
In a method for driving a micro mirror such as MEMS mirror and a display apparatus using the method, there are provided a mirror driving unit for driving the micro mirror which operates in a resonant mode and a nonresonant mode, a driving-condition setting unit for setting a mirror driving condition, a switching unit for switching on/off a mirror driving signal in the nonresonant mode, and a look-up table for indicating the relationship of a mirror response with respect to the driving condition already known in advance. The switching unit controls the transmission of the nonresonant-mode mirror driving signal while grasping the mirror response state with respect to the mirror driving signal, thereby finely increasing and decreasing a driving torque for the micro mirror. This fine increase and decrease allows the micro mirror to be fluctuated stably, and a further enhancement in the fluctuation rate.
摘要:
A light emitting element having a light emitting element portion formed of a group III nitride-based compound semiconductor and having a layer to emit light. The light emitting element portion is formed by lifting off a substrate by wet etching after the light emitting element portion is grown on the substrate. The light emitting element portion has a lift-off surface that is kept substantially intact as it is formed in growing the light emitting element portion on the substrate.
摘要:
A semiconductor device having an AlGaN—GaN heterojunction structure including an AlGaN layer and a GaN layer which device exhibits no changes over time in sheet resistance.As shown in FIG. 1, in a semiconductor device having an AlGaN—GaN heterojunction structure including an AlGaN layer 1 and a GaN layer 2, when the Al molar fraction of AlGaN (x %) and the thickness of the AlGaN layer (y nm) satisfy the relations: x+y
摘要翻译:具有包括AlGaN层和GaN层的AlGaN-GaN异质结结构的半导体器件,该器件在薄层电阻上随时间呈现不变化。 如图所示。 如图1所示,在具有包括AlGaN层1和GaN层2的AlGaN-GaN异质结结构的半导体器件中,当AlGaN的Al摩尔分数(x%)和AlGaN层的厚度(ynm)满足以下关系时: x + y <55,25 <= x <= 40,y> = 10,y小于临界厚度,从而在AlGaN层中不产生裂纹。 因此,本发明提供一种半导体器件,尽管Al摩尔分数高,实际上其表面电阻几乎没有随时间变化。
摘要:
A thermoplastic resin composition that has high chemical resistance, excellent appearance of a molded product thereof, and, as a surface layer material, good adhesion to a base material resin, particularly a PS resin or its waste resin, and that can provide a composite molded product having excellent processibility (for example, chipping resistance) and high durability (for example, heat-cycle resistance), and a composite molded product including the thermoplastic resin composition as a surface layer material. A thermoplastic resin composition that includes 100 parts by mass of a first vinyl (co)polymer (I) that is produced by (co)polymerization of at least one monomer component selected from the group consisting of aromatic vinyl compounds, vinyl cyanide compounds, and other vinyl monomers copolymerizable with these compounds, and 1 to 100 parts by mass of a vinyl copolymer (II) that is produced by copolymerization of a vinyl cyanide compound and another vinyl monomer copolymerizable with the vinyl cyanide compound and in which the content of the vinyl cyanide compound component in an acetone soluble fraction of the copolymer ranges from 0.1% to 15% by mass.
摘要:
The invention provides a group III nitride semiconductor manufacturing system which is free from interruption to rotation of a rotational shaft. The group III nitride semiconductor manufacturing system has a reacting vessel having an opening, a crucible disposed in an interior of the reaction vessel and containing a melt including at least a group III metal and an alkali metal, a holding unit supporting the crucible and having a rotational shaft extending from the interior of the reaction vessel to an exterior of the reaction vessel through the opening, a rotational shaft cover covering a part of the rotational shaft positioned at the exterior of the reacting vessel and connected to the reacting vessel at the opening, a rotational driving unit disposed at an outside of the reacting vessel and regulating the rotational shaft and a supply pipe connected to the rotational shaft cover and supplying a gas including at least nitrogen into a gap between the rotational shaft and the rotational shaft cover, wherein the gas and the melt react to grow a group III nitride semiconductor crystal.
摘要:
A method of forming a low temperature-grown buffer layer having the steps of: placing a Ga2O3 substrate in a MOCVD apparatus; providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350° C. to 550° C.; and supplying a source gas having two or more of TMG, TMA and NH3 onto the Ga2O3 substrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the Ga2O3 substrate.
摘要翻译:一种形成低温生长缓冲层的方法,具有以下步骤:将Ga 2 O 3衬底放置在MOCVD装置中; 在MOCVD装置中提供H 2气氛,并设定气氛温度为350℃至550℃的缓冲层生长条件。 并在缓冲层生长条件下将具有TMG,TMA和NH3两种以上的源气体供给到Ga 2 O 3衬底上,以在Ga 2 O 3衬底上形成低温生长缓冲层。