公开(公告)号：US20180012536A1

公开(公告)日：2018-01-11

申请号：US15641709

申请日：2017-07-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideaki Shishido

IPC: G09G3/20 ,  H01L29/786 ,  G09G3/36 ,  H01L27/32 ,  G02F1/133 ,  H01L27/12 ,  G02F1/1333 ,  G06F3/041

CPC classification number: G09G3/2092 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/133553 ,  G02F1/133555 ,  G02F2001/133354 ,  G02F2001/133567 ,  G02F2201/44 ,  G02F2203/01 ,  G02F2203/02 ,  G02F2203/09 ,  G06F3/041 ,  G06F3/0412 ,  G06F3/0416 ,  G06F2203/04103 ,  G09G3/3225 ,  G09G3/3648 ,  G09G2300/0426 ,  G09G2300/0876 ,  G09G2310/0291 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/281 ,  H01L27/3211 ,  H01L27/323 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3267 ,  H01L27/3276 ,  H01L29/7869

Abstract: A display device with a narrow bezel is provided. The display device includes a pixel circuit and a driver circuit provided on one plane. The driver circuit includes a selection circuit and a buffer circuit. The buffer circuit includes a first transistor and a second transistor. Sources of the first and second transistors are electrically connected with each other. Drains of the first and second transistors are electrically connected with each other. Gates of the first and second transistors are electrically connected with each other. The first transistor and the second transistor are stacked so that the direction of the current flow in the first transistor is parallel to that in the second transistor.

公开(公告)号：US09806099B2

公开(公告)日：2017-10-31

申请号：US15275687

申请日：2016-09-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Hideaki Shishido ,  Jun Koyama

IPC: H01L29/12 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L29/7869

Abstract: A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.

公开(公告)号：US09722090B2

公开(公告)日：2017-08-01

申请号：US14741961

申请日：2015-06-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideaki Shishido ,  Satoru Saito ,  Yukinori Shima ,  Daisuke Kurosaki ,  Junichi Koezuka ,  Shunpei Yamazaki

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/24 ,  H01L29/06 ,  H01L29/04 ,  H01L29/417 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/04 ,  H01L29/0692 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696

Abstract: A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor film, a first gate electrode, a second gate electrode, a first conductive film, and a second conductive film. The first gate electrode is electrically connected to the second gate electrode. The first conductive film and the second conductive film function as a source electrode and a drain electrode. The oxide semiconductor film includes a first region that overlaps with the first conductive film, a second region that overlaps with the second conductive film, and a third region that overlaps with a gate electrode and the third conductive film. The first region includes a first edge that is opposed to the second region. The second region includes a second edge that is opposed to the first region. The length of the first edge is shorter than the length of the second edge.

公开(公告)号：US09583739B2

公开(公告)日：2017-02-28

申请号：US14252033

申请日：2014-04-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiharu Hirakata ,  Mika Jikumaru ,  Yusuke Kubota ,  Daisuke Kubota ,  Tetsuji Ishitani ,  Hideaki Shishido

IPC: H01L33/38 ,  H01L51/52 ,  H01L27/32

CPC classification number: H01L51/5281 ,  H01L27/322 ,  H01L27/3246 ,  H01L27/3258 ,  H01L33/38 ,  H01L51/5209 ,  H01L51/5218 ,  H01L51/5225 ,  H01L51/525 ,  H01L2251/5315 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a light-emitting device where reflective electrodes are regularly arranged, occurrence of interference fringes due to reflection of light reflected by the reflective electrode is inhibited. A surface of the reflective electrode of a light-emitting element is provided with a plurality of depressions. The shapes of the plurality of depressions are different from each other and do not have rotational symmetry. Irregularity of the surface shape of the reflective electrode is increased, which inhibits interference of light reflected by the reflective electrode. To form the plurality of depressions in the surface of the reflective electrode, for example, a surface of an insulating layer that is a base of the reflective electrode is made uneven. Reflecting the surface shape of the insulating layer, the reflective electrode has an uneven surface.

Abstract translation: 在反射电极规则排列的发光装置中，抑制由反射电极反射的光的反射引起的干涉条纹的发生。 发光元件的反射电极的表面设置有多个凹部。 多个凹部的形状彼此不同，不具有旋转对称性。 反射电极的表面形状的不规则性增加，这抑制了由反射电极反射的光的干涉。 为了在反射电极的表面形成多个凹陷，例如，使作为反射电极的基底的绝缘层的表面不均匀。 反射绝缘层的表面形状，反射电极具有不平坦的表面。

公开(公告)号：US09449574B2

公开(公告)日：2016-09-20

申请号：US14049300

申请日：2013-10-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroyuki Miyake ,  Hideaki Shishido ,  Seiko Inoue

IPC: G09G3/36 ,  G02F1/1368

CPC classification number: G09G3/3696 ,  G02F1/1368 ,  G09G3/3614 ,  G09G3/3648 ,  G09G3/3688 ,  G09G2320/0219

Abstract: In a video voltage comparator circuit, an average of first video voltages applied to pixel electrodes of pixels in the second-half rows in a k-th frame period (k is a natural number) is compared with an average of second video voltages applied to pixel electrodes of pixels in the first-half rows in a (k+1)th frame period for each row. In an overdrive voltage switching circuit, when a difference obtained from the comparison in the video voltage comparator circuit is greater than or equal to a threshold value, the overdrive voltage in the (k+1)th frame period is switched to a first overdrive voltage, and when the difference obtained from the comparison in the video voltage comparator circuit is less than the threshold value, the overdrive voltage in the (k+1)th frame period is switched to a second overdrive voltage lower than the first overdrive voltage.

Abstract translation: 在视频电压比较器电路中，将施加到第k帧周期（k为自然数）的后半行像素的像素电极的第一视频电压的平均值与施加到 在每行的第（k + 1）帧周期中的前半行中的像素的像素电极。 在过驱动电压切换电路中，当从视频电压比较器电路的比较得到的差大于或等于阈值时，将第（k + 1）帧周期中的过驱动电压切换为第一过驱动电压 ，并且当从视频电压比较器电路中的比较得到的差小于阈值时，将第（k + 1）帧周期中的过驱动电压切换到低于第一过驱动电压的第二过驱动电压。

公开(公告)号：US20160071918A1

公开(公告)日：2016-03-10

申请号：US14933745

申请日：2015-11-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideaki Shishido

IPC: H01L27/32 ,  H01L29/786

CPC classification number: H01L27/3276 ,  G09G3/3208 ,  G09G3/3225 ,  G09G3/3233 ,  G09G3/3291 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2310/0262 ,  G09G2320/043 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78672

Abstract: To provide a display device and a driving method thereof, where variations in the threshold voltage of transistors can be compensated and thus variations in luminance of light-emitting elements can be suppressed. In a first period, initialization is performed; in a second period, a voltage based on the threshold voltage of a first transistor is held in first and second storage capacitors; in a third period, a voltage based on a video signal voltage and the threshold voltage of the first transistor is held in the first and second storage capacitors; and in a fourth period, voltages held in the first and second storage capacitors are applied to a gate terminal of the first transistor to supply a current to a light-emitting element, so that the light-emitting element emits light. Through the operation process, a current obtained by compensating variations in the threshold voltage of the first transistor can be supplied to the light-emitting element, thereby variations in luminance can be suppressed.

公开(公告)号：US20140070209A1

公开(公告)日：2014-03-13

申请号：US14023295

申请日：2013-09-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Hideaki Shishido ,  Jun Koyama

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L29/7869

Abstract: A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.

Abstract translation: 提供一种半导体装置，其包括在提高开口率的同时增加充电容量的电容器。 此外，提供消耗更少功率的半导体器件。 一种晶体管，其包括透光半导体膜，在一对电极之间设置有电介质膜的电容器，设置在所述透光半导体膜上的绝缘膜和第一透光性导电膜， 包括在绝缘膜上。 电容器包括用作一个电极的第一透光导电膜，用作电介质的绝缘膜和面向第一透光导电膜的第二透光导电膜，绝缘膜位于其间并具有功能 作为另一个电极。 第二透光导电膜形成在与晶体管的透光半导体膜相同的表面上，并且是含有掺杂剂的金属氧化物膜。

公开(公告)号：US20140034954A1

公开(公告)日：2014-02-06

申请号：US13957819

申请日：2013-08-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Hideaki Shishido ,  Jun Koyama ,  Daisuke Matsubayashi ,  Keisuke Murayama

IPC: H01L27/12

CPC classification number: H01L27/1255 ,  G02F1/1339 ,  G02F1/134363 ,  G02F1/13454 ,  G02F1/13458 ,  G02F1/136204 ,  G02F1/136209 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/134372 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2201/40 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3265 ,  H01L29/7869

Abstract: To provide a semiconductor device including a capacitor whose charge capacity is increased without reducing the aperture ratio. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor where a dielectric film is provided between a pair of electrodes, an insulating film provided over the light-transmitting semiconductor film, and a light-transmitting conductive film provided over the insulating film. In the capacitor, a metal oxide film containing at least indium (In) or zinc (Zn) and formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the light-transmitting conductive film serves as the other electrode, and the insulating film provided over the light-transmitting semiconductor film serves as the dielectric film.

Abstract translation: 提供一种包括电容器的半导体器件，其电容量增加而不降低开口率。 半导体器件包括：晶体管，包括透光半导体膜，电容器，其中电介质膜设置在一对电极之间;绝缘膜设置在透光半导体膜上;以及透光导电膜， 绝缘膜。 在电容器中，与晶体管中的透光性半导体膜相同的表面上形成至少含有铟（In）或锌（Zn）的金属氧化物膜作为一个电极，透光性导电膜作为 设置在透光半导体膜上的绝缘膜用作电介质膜。

公开(公告)号：US12212873B2

公开(公告)日：2025-01-28

申请号：US18024084

申请日：2021-09-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yusuke Negoro ,  Hideaki Shishido

IPC: H04N25/79 ,  H04N25/77 ,  H04N25/78

Abstract: The present invention relates to a highly functional imaging device that can be manufactured through a small number of steps. The imaging device is formed in such a manner that a first stacked body in which a plurality of devices are stacked and a second stacked body in which a plurality of devices are stacked are bonded to each other. For example, a pixel circuit, a driver circuit of a pixel, and the like can be provided in the first stacked body, and a reading circuit of the pixel circuit, a memory circuit, a driver circuit of the memory circuit, and the like can be provided in the second stacked body. With these structures, the imaging device which is small can be formed. Furthermore, wiring delay or the like can be prevented by stacking circuits, so that high-speed operation can be performed.

公开(公告)号：US12089459B2

公开(公告)日：2024-09-10

申请号：US17603067

申请日：2020-04-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidetomo Kobayashi ,  Hideaki Shishido ,  Takayuki Ikeda ,  Shuichi Katsui

IPC: H10K59/131 ,  H10K59/121 ,  H10K59/65

CPC classification number: H10K59/131 ,  H10K59/1213 ,  H10K59/1216 ,  H10K59/65

Abstract: A display apparatus with low power consumption and high image quality is provided. The display apparatus includes a light-emitting element, a first transistor, a second transistor, a third transistor, a first capacitor, and a second capacitor. Preferably, one electrode of the light-emitting element is electrically connected to one of a source and a drain of the first transistor; the one electrode of the light-emitting element is electrically connected to one electrode of the first capacitor; a gate of the first transistor is electrically connected to one of a source and a drain of the second transistor; the gate of the first transistor is electrically connected to one electrode of the second capacitor; the other electrode of the second capacitor is electrically connected to the other electrode of the first capacitor; and the other electrode of the second capacitor is electrically connected to one of a source and a drain of the third transistor.