公开(公告)号：US07070657B1

公开(公告)日：2006-07-04

申请号：US09418818

申请日：1999-10-15

申请人： David Cheung ,  Joe Feng ,  Judy H. Huang ,  Wai-Fan Yau

发明人： David Cheung ,  Joe Feng ,  Judy H. Huang ,  Wai-Fan Yau

IPC分类号： C23C16/52 ,  C23F1/00 ,  H01L21/306

CPC分类号： G03F7/091

摘要： This invention provides a stable process for depositing an antireflective layer. Helium gas is used to lower the deposition rate of plasma-enhanced silane oxide, silane oxynitride, and silane nitride processes. Helium is also used to stabilize the process, so that different films can be deposited. The invention also provides conditions under which process parameters can be controlled to produce antireflective layers with varying optimum refractive index, absorptive index, and thickness for obtaining the desired optical behavior.

摘要翻译： 本发明提供一种用于沉积抗反射层的稳定方法。 氦气用于降低等离子体增强硅烷氧化物，硅氮氧化物和氮化硅工艺的沉积速率。 氦也用于稳定工艺，使得可以沉积不同的膜。 本发明还提供了可以控制工艺参数以产生具有变化的最佳折射率，吸收指数和厚度以获得所需光学行为的抗反射层的条件。

公开(公告)号：US20060127495A1

公开(公告)日：2006-06-15

申请号：US11345769

申请日：2006-01-19

申请人： David Cheung

发明人： David Cheung

IPC分类号： A61K35/34

CPC分类号： A01N1/02 ,  A01N1/0226 ,  A61K38/39 ,  A61L27/3604 ,  A61L27/3687

摘要： The invention relates to a method of treatment of collagenous connective tissue removed from a donor for implant into a recipient which is re-habited or re-colonized by host cells without an immune rejection and inflammatory reaction. After removal from the donor, the tissue is trimmed and thereafter soaked in a cold stabilizing solution having a temperature range of 4 to 10 degrees centigrade. The tissue is then soaked at a predetermined temperature in a polyglycol, salt, hydrogen peroxide, and phosphate buffer first solution of predetermined quantities and concentrations and of sufficient ionic strength to permit ground substances to dissociate such that the collagen fibers remain stable. The tissue is then soaked in an alcohol and water solution at a predetermined temperature for a sufficient period of time to remove the residue of the first solution. Following the removal of the residue, the tissue is soaked at a predetermined temperature in a third solution of an anti-inflammatory agent, an anti-thrombic agent, alcohol, and water or sequentially in an anti-inflammatory agent, alcohol, and water solution, and then in an anti-thrombic agent, alcohol and water solution and thereafter stored.

摘要翻译： 本发明涉及一种治疗从供体移出的胶原结缔组织的方法，用于植入到受体中，其被宿主细胞重新吸收或重新定植而没有免疫排斥和炎症反应。 从供体中取出后，对组织进行修整，然后将其浸泡在温度范围为4至10摄氏度的冷稳定溶液中。 然后将组织在预定温度下浸入预定量和浓度的聚二醇，盐，过氧化氢和磷酸盐缓冲液第一溶液中并具有足够的离子强度，以使研磨物质解离，使得胶原纤维保持稳定。 然后将组织在预定温度下在醇和水溶液中浸泡足够的时间以除去第一溶液的残余物。 除去残留物后，将组织在预定温度下在抗炎剂，抗血栓剂，酒精和水的第三溶液中浸泡，或依次在抗炎剂，酒精和水溶液中浸泡 ，然后在抗血栓剂，酒精和水溶液中储存。

公开(公告)号：US06743737B2

公开(公告)日：2004-06-01

申请号：US10226717

申请日：2002-08-22

申请人： Wai-Fan Yau ,  David Cheung ,  Nasreen Gazala Chopra ,  Yung-Cheng Lu ,  Robert Mandal ,  Farhad Moghadam

发明人： Wai-Fan Yau ,  David Cheung ,  Nasreen Gazala Chopra ,  Yung-Cheng Lu ,  Robert Mandal ,  Farhad Moghadam

IPC分类号： H01L2131

CPC分类号： H01L21/02211 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3125 ,  H01L21/31633 ,  H01L21/76807

摘要： A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10 W to about 500 W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.

摘要翻译： 用于沉积低介电常数膜的方法和装置包括沉积氧化硅基膜，优选通过有机硅化合物和氧化气体以约10W至约500W的低RF功率水平反应，暴露基于氧化硅的 膜与水或疏水赋予性表面活性剂如六甲基二硅氮烷，并在升高的温度下固化氧化硅基膜。 可以在单独的微波室中增加氧化气体的离解，以有助于控制沉积膜的碳含量。 氧化硅系膜的耐湿性提高。

公开(公告)号：US06596655B1

公开(公告)日：2003-07-22

申请号：US09957681

申请日：2001-09-19

申请人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

发明人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

IPC分类号： H01L2131

CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2221/1031 ,  Y10T428/24926 ,  Y10T428/31663

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, dimethylsilane, (CH3)2SiH2, or 1,1,3,3-tetramethyl-disiloxane, (CH3)2—SiH—O—SiH—(CH3)2, and nitrous oxide, N2O, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10% to 30% of the duty cycle.

公开(公告)号：US06511909B1

公开(公告)日：2003-01-28

申请号：US09370371

申请日：1999-08-09

申请人： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

发明人： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

IPC分类号： H01L214763

CPC分类号： H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76837

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

摘要翻译： 一种通过有机硅烷化合物和氧化性气体反应沉积低介电常数膜的方法和装置。 氧化的有机硅烷膜具有优异的阻挡性能，用作与其它电介质层相邻的衬垫层或盖层。 氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。 通过甲基硅烷，CH 3 SiH 3和N 2 O的反应制备优选的氧化有机硅烷膜。

公开(公告)号：US06287990B1

公开(公告)日：2001-09-11

申请号：US09162915

申请日：1998-09-29

申请人： David Cheung ,  Wai-Fan Yau ,  Robert R. Mandal

发明人： David Cheung ,  Wai-Fan Yau ,  Robert R. Mandal

IPC分类号： C23C16505

CPC分类号： H01L21/76832 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76835 ,  H01L2221/1031

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.

摘要翻译： 一种用于通过有机硅烷或有机硅氧烷化合物和氧化性气体以10-250W的低RF功率水平反应沉积低介电常数膜的方法和装置。氧化的有机硅烷或有机硅氧烷膜具有良好的阻挡性能，用作衬垫 或盖层邻近其它电介质层。 氧化的有机硅烷或有机硅氧烷膜也可用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。 优选的氧化有机硅烷膜通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O以约10至200W的RF功率水平或约20至250的RF功率水平反应来制备 W占用周期的10-30％。

公开(公告)号：US06245690B1

公开(公告)日：2001-06-12

申请号：US09187460

申请日：1998-11-04

申请人： Wai-Fan Yau ,  David Cheung ,  Nasreen Gazala Chopra ,  Yung-Cheng Lu ,  Robert Mandal ,  Farhad Moghadam

发明人： Wai-Fan Yau ,  David Cheung ,  Nasreen Gazala Chopra ,  Yung-Cheng Lu ,  Robert Mandal ,  Farhad Moghadam

IPC分类号： C23C1640

CPC分类号： H01L21/02211 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3125 ,  H01L21/31633 ,  H01L21/76807

摘要： A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10 W to about 500 W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.

摘要翻译： 用于沉积低介电常数膜的方法和装置包括沉积氧化硅基膜，优选通过有机硅化合物和氧化气体以约10W至约500W的低RF功率水平反应，暴露基于氧化硅的 膜与水或疏水赋予性表面活性剂如六甲基二硅氮烷，并在升高的温度下固化氧化硅基膜。 可以在单独的微波室中增加氧化气体的离解，以有助于控制沉积膜的碳含量。 氧化硅系膜的耐湿性提高。

公开(公告)号：US06209484B1

公开(公告)日：2001-04-03

申请号：US09551021

申请日：2000-04-17

申请人： Judy H. Huang ,  Wai-Fan Yau ,  David Cheung ,  Chan-Lon Yang

发明人： Judy H. Huang ,  Wai-Fan Yau ,  David Cheung ,  Chan-Lon Yang

IPC分类号： C23C1600

CPC分类号： C23C16/308 ,  C23C16/345 ,  C23C16/52 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76829

摘要： A method and apparatus for depositing an etch stop layer. The method begins by introducing process gases into a processing chamber in which a substrate is disposed. An etch stop layer is then deposited over the substrate. An overlying layer is then deposited over the etch stop layer. The etch stop layer substantially protects underlying materials from the etchants used in patterning the overlying layer. Moreover, the etch stop layer also possesses advantageous optical characteristics, making it suitable for use as an antireflective coating in the patterning of layers underlying the etch stop layer.

摘要翻译： 一种沉积蚀刻停止层的方法和装置。 该方法开始于将工艺气体引入其中设置衬底的处理室中。 然后在衬底上沉积蚀刻停止层。 然后将上覆层沉积在蚀刻停止层上。 蚀刻停止层基本上保护用于图案化上覆层的蚀刻剂的下层材料。 此外，蚀刻停止层还具有有利的光学特性，使其适合用作在蚀刻停止层下面的图案图案中的抗反射涂层。

公开(公告)号：US6072227A

公开(公告)日：2000-06-06

申请号：US114682

申请日：1998-07-13

申请人： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

发明人： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

IPC分类号： C23C16/40 ,  H01L21/316 ,  H01L21/768 ,  H01L23/58

CPC分类号： H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76837

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas at a low RF power level from 20-200 W. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH.sub.3 SiH.sub.3, and nitrous oxide, N.sub.2 O, at a pulsed RF power level from 50-200 W during 10-30% of the duty cycle.

摘要翻译： 一种通过有机硅烷化合物和氧化气体在20-200W的低RF功率水平下反应沉积低介电常数膜的方法和装置。氧化的有机硅烷膜具有优异的阻挡性能，用作衬垫或盖 层相邻的其它电介质层。 氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。 优选的氧化有机硅烷膜通过甲基硅烷，CH 3 SiH 3和一氧化二氮N 2 O在占空比的10-30％期间以50-200W的脉冲RF功率水平反应来制备。

公开(公告)号：US5908672A

公开(公告)日：1999-06-01

申请号：US950923

申请日：1997-10-15

申请人： Choon Kun Ryu ,  Judy H. Huang ,  David Cheung

发明人： Choon Kun Ryu ,  Judy H. Huang ,  David Cheung

IPC分类号： C23C16/34 ,  C23C16/40 ,  H01L21/3105 ,  H01L21/316

CPC分类号： H01L21/02131 ,  C23C16/345 ,  C23C16/401 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31051 ,  H01L21/31629 ,  Y10S438/958

摘要： A planarized passivation layer is described. A planarized passivation layer of the present invention preferably includes a fluorosilicate glass (FSG) layer and a silicon nitride layer. The FSG layer is preferably deposited using triethoxyfluorosilane (TEFS) and tetraethoxyorthosilicate (TEOS). The inclusion of fluorine in the process chemistry provides good gap-fill characteristics in the film thus formed. The TEFS-based process employed by the present invention employs a low deposition rate, on the order of less than about 4500 .ANG./min, and preferably above 3000 .ANG./min, when depositing the FSG layer. The use of low deposition rate results in a positively sloped profile, preventing the formation of voids during the deposition of the FSG layer and the silicon nitride layer.

摘要翻译： 描述了平坦化的钝化层。 本发明的平坦化钝化层优选包括氟硅酸盐玻璃（FSG）层和氮化硅层。 FSG层优选使用三乙氧基氟硅烷（TEFS）和原硅酸四乙酯（TEOS）沉积。 在工艺化学中包含氟在由此形成的膜中提供良好的间隙填充特性。 当沉积FSG层时，本发明采用的基于TEFS的方法使用低沉积速率，小于约4500安培/分钟，优选高于3000安培/分钟。 使用低沉积速率导致正倾斜的轮廓，防止在沉积FSG层和氮化硅层期间形成空隙。