Optical writer and image forming apparatus including same
    82.
    发明授权
    Optical writer and image forming apparatus including same 有权
    光学写入器和包括它的成像设备

    公开(公告)号:US08711195B2

    公开(公告)日:2014-04-29

    申请号:US13439999

    申请日:2012-04-05

    IPC分类号: B41J27/00

    CPC分类号: B41J2/473 G02B26/123

    摘要: An optical writer includes a light source, an optical part, a housing, and an elastically deformable retainer. The light source projects light against a target. The optical part is disposed on a light path between the light source and the target. The housing houses the light source and the optical part. The elastically deformable retainer is detachably fixed to the housing and includes a plurality of contact portions on an inner surface of the retainer to hold the optical part. The retainer elastically deforms to separate at least one of the contact portions from other contact portions to hold the optical part by the plurality of contact portions.

    摘要翻译: 光学写入器包括光源,光学部件,壳体和可弹性变形的保持器。 光源对目标投射光。 光学部件设置在光源和靶之间的光路上。 外壳容纳光源和光学部件。 可弹性变形的保持器可拆卸地固定到壳体并且包括在保持器的内表面上的多个接触部分以保持光学部件。 保持器弹性变形以将至少一个接触部分与其它接触部分分离,以通过多个接触部分保持光学部件。

    Electronic system for converting DC voltage into AC voltage
    83.
    发明授权
    Electronic system for converting DC voltage into AC voltage 失效
    将直流电压转换成交流电压的电子系统

    公开(公告)号:US08687327B2

    公开(公告)日:2014-04-01

    申请号:US13227724

    申请日:2011-09-08

    IPC分类号: H02H7/12

    CPC分类号: B60L15/007 Y02T10/645

    摘要: An electronic system has IGBT, on driving FET and off driving FET connected with the gate of the IGBT, and a control circuit. The on driving FET in an on state supplies electric charge to the IGBT gate. The off driving FET in an on state releases the charge from the GET gate. The control circuit controls each of the on FETs according to a driving signal to be set in the on and off states every switching period of time and to control the voltage at the IGBT gate. When on-failure occurs in the on driving FET set in the on state so as to keep the on driving FET in the on state in spite of control of the control circuit, the control circuit controls a controlled element other than the off driving FET to set the IGBT in the off state.

    摘要翻译: 电子系统具有IGBT,与IGBT的栅极连接的驱动FET和截止驱动FET以及控制电路。 接通状态下的导通状态FET向IGBT栅极供给电荷。 导通状态的关断驱动FET从GET门释放电荷。 控制电路根据驱动信号控制每个导通FET,每个开关周期被设置为导通和截止状态,并且控制IGBT栅极处的电压。 当处于导通状态的导通驱动FET中的故障发生时,尽管控制电路的控制,导通驱动FET保持导通状态,但是控制电路控制除了关断驱动FET以外的受控元件 将IGBT置于关闭状态。

    Vehicle guidance device, vehicle guidance method, and vehicle guidance program
    84.
    发明授权
    Vehicle guidance device, vehicle guidance method, and vehicle guidance program 有权
    车辆引导装置,车辆引导方法和车辆引导程序

    公开(公告)号:US08666646B2

    公开(公告)日:2014-03-04

    申请号:US13510443

    申请日:2010-12-02

    IPC分类号: G08G1/16

    CPC分类号: G08G1/163 G08G1/167

    摘要: A vehicle guidance device includes: an inter- vehicle distance specification unit that specifies an inter-vehicle distance, which is an inter-vehicle distance in a prescribed lane, between vehicles up to a reference point of a lane change; a recommended section specification unit that ,based on the specified inter-vehicle distance, specifies a recommended section in which a lane change to the prescribed lane should be made before reaching the reference point; and a communication unit that, based on the specified recommended section, outputs guidance information pertaining to the lane change to the prescribed lane.

    摘要翻译: 车辆引导装置包括:车辆间距离指定单元,其指定在车道之间的车辆间距离,所述车辆间距离是车道间变化的参考点之间的车辆间距离; 推荐部分规格单元,根据指定的车间距离,指定在到达参考点之前应进行到规定车道的车道更换的推荐部分; 以及通信单元,根据指定的推荐部分,将与车道改变有关的引导信息输出到规定车道。

    Semiconductor device and method for driving the same
    85.
    发明授权
    Semiconductor device and method for driving the same 有权
    半导体装置及其驱动方法

    公开(公告)号:US08575610B2

    公开(公告)日:2013-11-05

    申请号:US13213673

    申请日:2011-08-19

    IPC分类号: H01L33/00

    摘要: An object is to alleviate the concentration of an electric field in a semiconductor device. A gate electrode and a drain electrode are provided not to overlap with each other, and an electric-field control electrode is provided between the gate electrode and the drain electrode over a top surface. Insulating layers are provided between the gate electrode and a semiconductor layer and between the electric-field control electrode and the semiconductor layer, and the insulating layer provided between the electric-field control electrode and the semiconductor layer has a larger thickness than the insulating layer provided between the gate electrode and the semiconductor layer. Further, when the semiconductor device is driven, the potential of the electric-field control electrode may be higher than or equal to a source potential and lower than a gate potential, and for example, connection between the electric-field control electrode and the source potential enables such a structure.

    摘要翻译: 目的是减轻半导体器件中的电场的集中。 栅极电极和漏极电极被设置为不彼此重叠,并且电场控制电极在顶表面上设置在栅电极和漏电极之间。 绝缘层设置在栅电极和半导体层之间以及电场控制电极和半导体层之间,并且设置在电场控制电极和半导体层之间的绝缘层具有比所提供的绝缘层更大的厚度 在栅电极和半导体层之间。 此外,当半导体器件被驱动时,电场控制电极的电位可以高于或等于源极电位并且低于栅极电位,并且例如电场控制电极和源极之间的连接 潜力可以实现这样的结构。

    RECHARGEABLE ELECTRIC DEVICE
    86.
    发明申请
    RECHARGEABLE ELECTRIC DEVICE 审中-公开
    可充电电器

    公开(公告)号:US20130169217A1

    公开(公告)日:2013-07-04

    申请号:US13807671

    申请日:2011-06-13

    IPC分类号: H02J7/00

    摘要: Under a control by a controller (14), a rechargeable electric device makes a full charge display to display on a display unit (15) that a secondary battery (11) is fully charged, after a start of charging the secondary battery (11) in a case where either when a count value of a counter reaches a first predetermined value (C1) corresponding to the full charge of the secondary battery (11), or when a duty ratio of switching signals which make an on/off control of a switching element (131) becomes smaller than or equal to a predetermined value (D) corresponding to the charge current obtained at a time of the full charge of the secondary battery (11).

    摘要翻译: 在控制器(14)的控制下,在二次电池(11)开始充电之后,可再充电电子装置进行充满电显示,以在二次电池(11)完全充电的显示单元(15)上显示, 在计数器的计数值达到与二次电池(11)的全部电荷对应的第一预定值(C1)的情况下,或当对二次电池(11)的开/关控制的开关信号的占空比 开关元件(131)变得小于或等于对应于在二次电池(11)的完全充电时获得的充电电流的预定值(D)。

    POWER CONVERSION APPARATUS
    87.
    发明申请
    POWER CONVERSION APPARATUS 有权
    功率转换装置

    公开(公告)号:US20130039097A1

    公开(公告)日:2013-02-14

    申请号:US13568433

    申请日:2012-08-07

    IPC分类号: H02M3/335

    摘要: A power conversion apparatus capable of suppressing adverse effects of noise caused by crossing of wiring patterns on a wiring board mounting the apparatus thereon. The apparatus includes a transformer, a switching element connected to the transformer, a feedback rectification circuit, and a control circuit operable to control the switching element in response to a DC voltage from the feedback rectification circuit. A first wiring pattern electrically connecting the feedback rectification circuit and the control circuit is formed in one of two surface regions of the wiring board separated by an imaginary line running through a junction of the first wiring pattern and the feedback rectification circuit and a junction of the first wiring pattern and the control circuit, and a second wiring pattern electrically connecting the control circuit and the switching element is formed outside an area enclosed by the imaginary line and the first wiring pattern.

    摘要翻译: 一种电力转换装置,其能够抑制在其上安装该装置的布线板上的布线图案的交叉引起的噪声的不利影响。 该装置包括变压器,连接到变压器的开关元件,反馈整流电路和可操作以响应来自反馈整流电路的直流电压来控制开关元件的控制电路。 电连接反馈整流电路和控制电路的第一布线图案形成在布线板的两个表面区域之一中,该布线板由通过第一布线图案和反馈整流电路的结的假想线分开, 第一布线图案和控制电路,以及电连接控制电路和开关元件的第二布线图案形成在由虚线和第一布线图案包围的区域之外。

    Apparatus for detecting malfunctions of electromagnetic brakes of robot
    89.
    发明授权
    Apparatus for detecting malfunctions of electromagnetic brakes of robot 有权
    用于检测机器人电磁制动器故障的装置

    公开(公告)号:US08126593B2

    公开(公告)日:2012-02-28

    申请号:US12379422

    申请日:2009-02-20

    IPC分类号: B60L7/00

    摘要: An apparatus is provided for detecting a malfunction occurring in an electromagnetic brake of a robot. In the apparatus, the main relay and the sub-relay are controlled to open the main contact and the sub-contact when the robot is activated. Detecting is then made whether or not the main contact is malfunctioning, by monitoring an energized state of the main contact. Activation of the robot is stopped when the main contact is malfunctioning and the main relay is controlled to close the main contact for a given period of time when that the main contact is operating normally. Detecting is further made as to whether or not the sub-contact is malfunctioning, by monitoring an energized state of the sub-contact The activation of the robot is stopped when the sub-contact is malfunctioning and the main relay is controlled to close the main contact when the sub-contact is operating normally.

    摘要翻译: 提供一种用于检测在机器人的电磁制动器中发生故障的装置。 在该装置中,当机器人被激活时,主继电器和副继电器被控制以打开主触点和副触点。 然后通过监视主触点的通电状态来检测主触点是否发生故障。 当主接触器正常运行时,主接触器发生故障并且主继电器被控制以关闭主接触器一段给定的时间段时,机器人的激活被停止。 通过监视副接点的通电状态,进一步检测副接点是否发生故障。当副接点发生故障时,机器人的启动停止,主继电器被控制以闭合主接点 当子接触器正常工作时接触。

    SEMICONDUCTOR DEVICE
    90.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20110089419A1

    公开(公告)日:2011-04-21

    申请号:US12907722

    申请日:2010-10-19

    IPC分类号: H01L29/786 H01L29/78

    摘要: An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.

    摘要翻译: 目的是提供一种存储器件,其包括可通过具有低截止电流的薄膜晶体管无故障地操作的存储元件。 提供了一种存储器件,其中包括至少一个包括氧化物半导体层的薄膜晶体管的存储元件被布置为矩阵。 包括氧化物半导体层的薄膜晶体管具有高场效应迁移率和低截止电流,因此可以有利地操作而没有问题。 此外,可以降低功耗。 由于存储器件和像素可以形成在一个衬底上,所以这种存储器件在包括氧化物半导体层的薄膜晶体管被设置在显示器件的像素中的情况下是特别有效的。