公开(公告)号：US4733950A

公开(公告)日：1988-03-29

申请号：US939438

申请日：1986-12-04

申请人： Yoneharu Takubo ,  Yasutaka Horibe ,  Nobue Yamanishi ,  Eiji Fujii ,  Hideyuki Okinaka

发明人： Yoneharu Takubo ,  Yasutaka Horibe ,  Nobue Yamanishi ,  Eiji Fujii ,  Hideyuki Okinaka

IPC分类号： G02F1/055

CPC分类号： G02F1/0555

摘要： A display apparatus using a light-transmitting ceramic plate having an electrooptic effect known as Kerr effect is disclosed. The ceramic plate is placed between two parallel polarizers having a same axis of polarization. A transparent flexible sheet faces a surface of the ceramic plate. The flexible sheet has a plurality of transparent striped electrodes on a surface facing the surface of the ceramic plate. The striped electrodes are locally brought into contact with the surface of the ceramic plate by a pressure applied by a pressure application head which is either always or intermittently pressed onto the flexible sheet. The pressure application head is movable in a direction parallel to the striped electrodes for scanning.

摘要翻译： 公开了一种使用具有称为克尔效应的电光效应的透光陶瓷板的显示装置。 将陶瓷板放置在具有相同的偏振轴的两个平行的偏振器之间。 透明柔性片面对陶瓷板的表面。 柔性片在与陶瓷板的表面相对的表面上具有多个透明条纹状电极。 条状电极通过施加在压力施加头上的压力局部地与陶瓷板的表面接触，压力施加头总是或间歇地压在柔性片上。 压力施加头可以在与条状电极平行的方向上移动以进行扫描。

公开(公告)号：US08414187B2

公开(公告)日：2013-04-09

申请号：US13207940

申请日：2011-08-11

申请人： Michihito Ueda ,  Hiroyuki Tanaka ,  Yukihiro Kaneko ,  Eiji Fujii

发明人： Michihito Ueda ,  Hiroyuki Tanaka ,  Yukihiro Kaneko ,  Eiji Fujii

IPC分类号： G01K7/01 ,  G01J5/00

CPC分类号： H01L37/02 ,  G01K7/36

摘要： A temperature sensor includes first and second lower electrodes, a ferroelectric layer having polarization, a semiconductor layer; and first to third upper electrodes. The second upper electrode is interposed between the first upper electrode and the third upper electrode in a plan view. The semiconductor layer includes a first channel disposed between the first upper electrode and the second upper electrode, and a second channel disposed between the second upper electrode and the third upper electrode. The ferroelectric layer includes a first ferroelectric part disposed below the first channel and a second ferroelectric part disposed below the second channel. A polarization direction of the first ferroelectric part is opposite to a polarization direction of the second first ferroelectric part. The temperature is calculated based on the output voltage from the second upper electrode and the voltage applied to the first upper electrode.

摘要翻译： 温度传感器包括第一和第二下部电极，具有极化的铁电体层，半导体层; 和第一至第三上电极。 第二上电极在平面图中插入在第一上电极和第三上电极之间。 半导体层包括设置在第一上电极和第二上电极之间的第一通道和设置在第二上电极和第三上电极之间的第二通道。 铁电层包括设置在第一通道下方的第一铁电体部分和设置在第二通道下方的第二铁电体部分。 第一铁电体部的偏振方向与第二第一强电介质部的偏振方向相反。 基于来自第二上电极的输出电压和施加到第一上电极的电压来计算温度。

公开(公告)号：US08304803B2

公开(公告)日：2012-11-06

申请号：US13283985

申请日：2011-10-28

申请人： Hiroyuki Tanaka ,  Nobuaki Nagao ,  Takahiro Hamada ,  Eiji Fujii

发明人： Hiroyuki Tanaka ,  Nobuaki Nagao ,  Takahiro Hamada ,  Eiji Fujii

IPC分类号： H01L21/00

CPC分类号： H01L33/42 ,  H01L33/32

摘要： A light-emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film, the n-type single-crystalline ITO transparent film is in contact with the n-type single-crystalline ZnO transparent film, and the p-side electrode is in connected with the n-type single-crystalline ZnO transparent film. The n-type single-crystalline ITO transparent film contains Ga, a molar ratio of Ga/(In+Ga) being not less than 0.08 and not more than 0.5. Thickness of the n-type single-crystalline ITO transparent film is not less than 1.1 nm and not more than 55 nm.

摘要翻译： 发光二极管包括堆叠在其中的n型氮化物半导体层，多量子阱，p型氮化物半导体层，窗口电极层，p侧电极和n侧电极 订购。 窗口电极层包括n型单晶ITO透明膜和n型单晶ZnO透明膜。 p型氮化物半导体层与n型单晶ITO透明膜接触，n型单晶ITO透明膜与n型单晶ZnO透明膜接触，p型 侧电极与n型单晶ZnO透明膜连接。 n型单晶ITO透明膜含有Ga，Ga /（In + Ga）的摩尔比不小于0.08且不大于0.5。 n型单晶ITO透明膜的厚度不小于1.1nm且不大于55nm。

公开(公告)号：US20120043524A1

公开(公告)日：2012-02-23

申请号：US13284294

申请日：2011-10-28

申请人： Hiroyuki TANAKA ,  Nobuaki Nagao ,  Takahiro Hamada ,  Eiji Fujii

发明人： Hiroyuki TANAKA ,  Nobuaki Nagao ,  Takahiro Hamada ,  Eiji Fujii

IPC分类号： H01L33/06

CPC分类号： H01L33/42 ,  H01L2933/0083 ,  H01L2933/0091

摘要： An light emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well layer, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The n-side electrode is electrically connected to the n-type nitride semiconductor layer. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film. The light-emitting diode further comprises a plurality of single-crystalline ZnO rods formed on the n-type single-crystalline ZnO transparent film. The respective lower portions of the single-crystalline ZnO rods have a shape of an inverted taper, which sharpens from the single-crystalline n-type ZnO transparent film toward the n-type nitride semiconductor layer.

摘要翻译： 发光二极管包括堆叠在其中的n型氮化物半导体层，多量子阱层，p型氮化物半导体层，窗口电极层，p侧电极和n侧电极 订购。 n侧电极与n型氮化物半导体层电连接。 窗口电极层包括n型单晶ITO透明膜和n型单晶ZnO透明膜。 p型氮化物半导体层与n型单晶ITO透明膜接触。 发光二极管还包括形成在n型单晶ZnO透明膜上的多个单晶ZnO棒。 单晶ZnO棒的各自的下部具有从单晶n型ZnO透明膜朝向n型氮化物半导体层而锐化的倒锥形。

公开(公告)号：US07312558B2

公开(公告)日：2007-12-25

申请号：US11097924

申请日：2005-04-01

申请人： Satoru Fujii ,  Takeshi Kamada ,  Atsushi Tomozawa ,  Eiji Fujii

发明人： Satoru Fujii ,  Takeshi Kamada ,  Atsushi Tomozawa ,  Eiji Fujii

IPC分类号： H01L41/187 ,  H01L41/04 ,  H01L41/16

CPC分类号： B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  G01C19/5607 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/316

摘要： In a piezoelectric element, a cubic or tetragonal orientation control layer (15) is provided on a first electrode layer (14), and formed on the orientation control layer (15) is a piezoelectric layer (16) having a rhombohedral or tetragonal crystalline structure and made of lead zirconate titanate to which a Pb-containing complex perovskite compound expressed by the chemical formula Pb(AaBb)O3 has been added in an amount that is from 1 mol % to 50 mol %. The piezoelectric layer (16) is formed so that the crystal grains thereof become columnar grains which extend in the thickness direction of the piezoelectric layer (16) and in which the ratio of the average cross-sectional diameter to the length is from 1/50 to 1/14.

摘要翻译： 在压电元件中，在第一电极层（14）上设置立方或四方取向控制层（15），并且在取向控制层（15）上形成具有菱形或四边形晶体结构的压电层（16） 并由化学式Pb（A a B b B b）O 3表示的含Pb复合钙钛矿化合物的锆钛酸铅制成， 的添加量为1摩尔％〜50摩尔％。 形成压电体层16，使其晶粒成为在压电体层16的厚度方向上延伸的柱状晶粒，其平均截面直径与长度的比率为1/50 到1/14。

公开(公告)号：US07306965B2

公开(公告)日：2007-12-11

申请号：US11064999

申请日：2005-02-25

申请人： Hideo Torii ,  Eiji Fujii ,  Taku Hirasawa ,  Atsushi Tomozawa

发明人： Hideo Torii ,  Eiji Fujii ,  Taku Hirasawa ,  Atsushi Tomozawa

IPC分类号： H01L21/00

CPC分类号： C01B13/0251 ,  C25D1/003

摘要： A first electrode thin film is formed on an upper surface of the oxygen ion conductive thin film so as to have a through hole. A resistor is formed on part of the upper surface of the oxygen conductive thin film located in the through hole. Thus, the oxygen ion conductive thin film can be directly heated by the resistor, so that oxygen ions can be speedily transferred with a low power. Therefore, the oxygen ion conductivity of the oxygen ion conductive thin film can be improved.

摘要翻译： 第一电极薄膜形成在氧离子传导性薄膜的上表面上以具有通孔。 在位于通孔中的导电薄膜的上表面的一部分上形成电阻器。 因此，可以通过电阻器直接加热氧离子传导性薄膜，能够以低功率快速地转移氧离子。 因此，能够提高氧离子传导性薄膜的氧离子传导性。

公开(公告)号：US07288456B2

公开(公告)日：2007-10-30

申请号：US11169040

申请日：2005-06-29

申请人： Toyoji Ito ,  Eiji Fujii ,  Kazuo Umeda

发明人： Toyoji Ito ,  Eiji Fujii ,  Kazuo Umeda

IPC分类号： H01L21/336

CPC分类号： H01L27/11502 ,  H01L27/105 ,  H01L27/10852 ,  H01L27/10894 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor device includes: a lower hydrogen-barrier film; a capacitor formed on the lower hydrogen-barrier film and including a lower electrode, a capacitive insulating film, and an upper electrode; an interlayer dielectric film formed so as to cover the periphery of the capacitor; and an upper hydrogen-barrier film covering the top and lateral portions of the capacitor. An opening, which exposes the lower hydrogen-barrier film where the lower hydrogen-barrier film is located around the capacitor, and which is tapered and flares upward, is formed in the interlayer dielectric film, and the upper hydrogen-barrier film is formed along the lateral and bottom faces of the opening, and is in contact with the lower hydrogen-barrier film in the opening.

公开(公告)号：US07193756B2

公开(公告)日：2007-03-20

申请号：US10997143

申请日：2004-11-24

申请人： Akiko Murata ,  Eiji Fujii ,  Hideo Torii

发明人： Akiko Murata ,  Eiji Fujii ,  Hideo Torii

IPC分类号： G02B5/32 ,  B41J2/045

CPC分类号： B41J2/14233 ,  B41J2/14282 ,  B41J2202/03 ,  H01L41/0815 ,  H01L41/094 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/316

摘要： A piezoelectric element includes a first electrode film; a piezoelectric layered film including a first piezoelectric thin film formed on the first electrode film and a second piezoelectric thin film formed on the first piezoelectric thin film; and a second electrode film formed on the second piezoelectric thin film. Each of the first and second piezoelectric thin films is an aggregate of columnar grains grown unidirectionally along the thickness direction of the piezoelectric layered film. The Pb content of the first piezoelectric thin film is smaller than the Pb content of the second piezoelectric thin film. A columnar grain of the second piezoelectric thin film has a larger average cross-sectional diameter than an average cross-sectional diameter of a columnar grain of the first piezoelectric thin film. A ratio of the thickness of the piezoelectric layered film to the average cross-sectional diameter of the second piezoelectric thin film is not less than 20 and not more than 60.

摘要翻译： 压电元件包括​​第一电极膜; 压电层叠膜，包括形成在第一电极膜上的第一压电薄膜和形成在第一压电薄膜上的第二压电薄膜; 以及形成在第二压电薄膜上的第二电极膜。 第一和第二压电薄膜中的每一个是沿着压电层叠膜的厚度方向单向生长的柱状晶粒的集合体。 第一压电薄膜的Pb含量小于第二压电薄膜的Pb含量。 第二压电薄膜的柱状晶粒的平均截面直径大于第一压电薄膜的柱状晶粒的平均截面直径。 压电层叠膜的厚度与第二压电薄膜的平均截面直径的比率不小于20并且不大于60。

公开(公告)号：US07185540B2

公开(公告)日：2007-03-06

申请号：US11409469

申请日：2006-04-21

申请人： Hideo Torii ,  Eiji Fujii ,  Atsushi Tomozawa ,  Akiko Murata ,  Ryoichi Takayama ,  Taku Hirasawa

发明人： Hideo Torii ,  Eiji Fujii ,  Atsushi Tomozawa ,  Akiko Murata ,  Ryoichi Takayama ,  Taku Hirasawa

IPC分类号： G01P9/04 ,  H01L41/047 ,  H01L41/083

CPC分类号： G01P15/0922 ,  B41J2/14233 ,  B41J2/14282 ,  B41J2002/1425 ,  B41J2202/03 ,  G01C19/5607 ,  H01L41/0477 ,  H01L41/0815 ,  H01L41/094 ,  H01L41/0973 ,  H01L41/316 ,  H01L41/319

摘要： In a piezoelectric element 20, a first electrode layer 2 made of an alloy of at least one metal selected from the group consisting of cobalt, nickel, iron, manganese and copper and a noble metal is formed on a silicon substrate 1, and a piezoelectric layer 3 made of a rhombohedral or tetragonal perovskite oxide (e.g., PZT) is formed on the first electrode layer 2 so that the piezoelectric layer 3 is preferentially oriented along the (001) plane.

摘要翻译： 在压电元件20中，在硅基板1上形成由选自钴，镍，铁，锰和铜中的至少一种金属和贵金属构成的第一电极层2， 在第一电极层2上形成由菱方或四方钙钛矿氧化物（例如PZT）制成的层3，使得压电层3优先沿（001）面取向。

公开(公告)号：US20060187272A1

公开(公告)日：2006-08-24

申请号：US11409469

申请日：2006-04-21

申请人： Hideo Torii ,  Eiji Fujii ,  Atsushi Tomozawa ,  Akiko Murata ,  Ryoichi Takayama ,  Taku Hirasawa

发明人： Hideo Torii ,  Eiji Fujii ,  Atsushi Tomozawa ,  Akiko Murata ,  Ryoichi Takayama ,  Taku Hirasawa

IPC分类号： B41J2/045

CPC分类号： G01P15/0922 ,  B41J2/14233 ,  B41J2/14282 ,  B41J2002/1425 ,  B41J2202/03 ,  G01C19/5607 ,  H01L41/0477 ,  H01L41/0815 ,  H01L41/094 ,  H01L41/0973 ,  H01L41/316 ,  H01L41/319

摘要： In a piezoelectric element 20, a first electrode layer 2 made of an alloy of at least one metal selected from the group consisting of cobalt, nickel, iron, manganese and copper and a noble metal is formed on a silicon substrate 1, and a piezoelectric layer 3 made of a rhombohedral or tetragonal perovskite oxide (e.g., PZT) is formed on the first electrode layer 2 so that the piezoelectric layer 3 is preferentially oriented along the (001) plane.