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    Ferroelectric capacitor and a method for manufacturing thereof
    81.
    发明授权
    Ferroelectric capacitor and a method for manufacturing thereof 失效
    铁电电容器及其制造方法

    公开(公告)号：US06454914B1

    公开(公告)日：2002-09-24

    申请号：US08812059

    申请日：1997-02-20

    申请人： Takashi Nakamura

    发明人： Takashi Nakamura

    IPC分类号： C23C1434

    CPC分类号： H01L21/32051 ,  H01L21/76841 ,  H01L27/0805 ,  H01L28/55 ,  H01L28/56 ,  H01L28/60 ,  H01L28/65 ,  H01L28/75

    摘要： An object of the present invention is to provide a ferroelectric capacitor which shows excellent ferroelectricity. A silicon oxidation layer 4, a lower electrode 12, a ferroelectric layer 8 and an upper electrode 15 are formed on a silicon substrate 2. The lower electrode 12 is made of palladium oxide. Also, the upper electrode 15 is made by palladium oxide, since palladium oxide prevents leakage of oxygen contained in the ferroelectric layer 8. Thus, the ferroelectric capacitor of the present invention offers excellent ferroelectricity can be realized.

    摘要翻译： 本发明的目的是提供一种显示出优异的铁电性的铁电电容器。 在硅衬底2上形成硅氧化层4，下电极12，铁电层8和上电极15.下电极12由氧化钯制成。 此外，上电极15由氧化钯制成，因为氧化钯防止铁电层8中所含的氧的泄漏。因此，本发明的强电介质电容器可以实现优异的铁电性。

    Active matrix LCD with pixels alternately overlapped with data lines
    82.
    发明授权
    Active matrix LCD with pixels alternately overlapped with data lines 有权
    有源矩阵LCD与像素交替重叠的数据线

    公开(公告)号：US06259493B1

    公开(公告)日：2001-07-10

    申请号：US09325538

    申请日：1999-06-04

    申请人： Takashi Nakamura ,  Yasuyuki Hanazawa ,  Kohei Nagayama

    发明人： Takashi Nakamura ,  Yasuyuki Hanazawa ,  Kohei Nagayama

    IPC分类号： G02F11343

    CPC分类号： G02F1/136286 ,  G02F1/136213 ,  G02F2203/02

    摘要： Not only a signal line (27a) but also an adjacent signal line (27b) partly oppose a reflection pixel electrode (50a) through an insulating film to be capacitively coupled to the electrode. The area of that portion (27a1) of the signal line (27a) which opposes the reflection pixel electrode (50a) is almost equal to that of that portion (27b2) of the signal line (27b) which oppose the pixel electrode (50a). Therefore, the influence of the signal potential of the signal line (27a) on the reflection pixel electrode (50a) through capacitive coupling is nearly equal to that of the signal potential of the signal line (27b) on the reflection pixel electrode (50a) through capacitive coupling. Luminance differences between adjacent pixels (50a and 50b; 50b and 50c, . . . ) are reduced, thereby preventing crosstalk.

    摘要翻译： 不仅信号线（27a），而且邻近的信号线（27b）部分地通过绝缘膜与反射像素电极（50a）相对电容耦合到电极。 与反射像素电极（50a）相对的信号线（27a）的部分（27a1）的面积大致等于与像素电极（50a）相对的信号线（27b）的部分（27b2）的面积， 。 因此，通过电容耦合，信号线（27a）的信号电位对反射像素电极（50a）的影响与反射像素电极（50a）上的信号线（27b）的信号电位的影响几乎相等， 通过电容耦合。 相邻像素（50a和50b; 50b和50c之间的亮度差）减小，从而防止串扰。

    Linear shuttle motor assembly and a controller therefor
    83.
    发明授权
    Linear shuttle motor assembly and a controller therefor 有权
    直线电机组件及其控制器

    公开(公告)号：US06239517B1

    公开(公告)日：2001-05-29

    申请号：US09507667

    申请日：2000-02-22

    申请人： Takashi Nakamura ,  Toshio Hiki

    发明人： Takashi Nakamura ,  Toshio Hiki

    IPC分类号： B41J2300

    CPC分类号： B41J25/006 ,  H02K33/16

    摘要： A linear shuttle motor assembly used for reciprocally moving a printer head includes a rotor and a stator having the same mass. A loud, i.e., the printer head, is connected to the stator and a counter balance to the rotor. The rotor and the stator are driven to reciprocally move in mutually opposite directions. A 180 degree phase synchronizing mechanism is used to synchronize phases of the rotor and the stator. The mechanism is fixed to a housing and connected to the rotor and the stator. By this configuration, the amount of power transmission loss is reduced to a minimum, which improves energy conversion efficiency.

    摘要翻译： 用于往复移动打印头的线性往复马达组件包括具有相同质量的转子和定子。 大声的，即打印头，连接到定子和与转子的平衡。 驱动转子和定子在相互相反的方向上往复运动。 180度相位同步机构用于同步转子和定子的相位。 该机构固定在壳体上并连接到转子和定子上。 通过这种配置，将电力传输损失量减少到最小，这提高了能量转换效率。

    Ferroelectric capacitor and a method for manufacturing thereof
    84.
    发明授权
    Ferroelectric capacitor and a method for manufacturing thereof 失效

    公开(公告)号：US06229168B1

    公开(公告)日：2001-05-08

    申请号：US09435935

    申请日：1999-11-09

    申请人： Takashi Nakamura

    发明人： Takashi Nakamura

    IPC分类号： H01L2976

    CPC分类号： H01L27/11502 ,  H01G4/008 ,  H01G4/228 ,  H01G4/33 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/75

    摘要： It is an object of the present invention to provide a ferroelectric capacitor which maintains high ferroelecticity. A silicon oxide layer 2, a lower electrode 12, a ferroelectric layer 8 and an upper electrode 10 are formed on a silicon substrate 2. The lower electrode 12 is formed by an alloy layer made of iridium and platinum. The alloy layer of the lower electrode 12 can be formed under appropriate lattice constant correspond with a kind and composition of the ferroelectric layer 8. So that, a ferroelectric layer having excellent ferroelectricity can be obtained. Also, it is possible to prevent vacancy of oxygen in the ferroelectric layer 8.

    Metal ferroelectric silicon field effect transistor memory
    86.
    发明授权
    Metal ferroelectric silicon field effect transistor memory 失效
    金属铁电硅场效应晶体管存储器

    公开(公告)号：US06128212A

    公开(公告)日：2000-10-03

    申请号：US069214

    申请日：1998-04-29

    申请人： Takashi Nakamura ,  Yuichi Nakao

    发明人： Takashi Nakamura ,  Yuichi Nakao

    IPC分类号： H01L21/8247 ,  G11C11/22 ,  H01L21/8246 ,  H01L27/105 ,  H01L29/788 ,  H01L29/792

    CPC分类号： G11C11/22

    摘要： On the surface of a semiconductor substrate between a source region and a drain region formed on the semiconductor substrate, an insulating layer, a conductive thin film used as a floating electrode, a ferroelectric thin film and a conductive thin film used as a control electrode are successively formed. Writing or erasing is performed by causing a potential difference between the control electrode and the semiconductor substrate to reverse the polarization of the ferroelectric thin film.

    摘要翻译： 在形成于半导体基板上的源极区域与漏极区域之间的半导体衬底的表面上，使用绝缘层，用作浮动电极的导电薄膜，铁电薄膜和用作控制电极的导电薄膜， 先后形成。 通过使控制电极和半导体衬底之间的电位差反转铁电薄膜的极化来进行写入或擦除。

    Ferroelectric memory device and a method of manufacturing thereof
    88.
    发明授权
    Ferroelectric memory device and a method of manufacturing thereof 有权
    铁电存储器件及其制造方法

    公开(公告)号：US6097058A

    公开(公告)日：2000-08-01

    申请号：US235714

    申请日：1999-01-22

    申请人： Takashi Nakamura ,  Yoshikazu Fujimori

    发明人： Takashi Nakamura ,  Yoshikazu Fujimori

    IPC分类号： H01L21/8247 ,  H01B3/12 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792

    CPC分类号： H01L29/78391

    摘要： A ferroelectric layer having a low dielectric constant which is used for a ferroelectric memory element is provided. Also, the ferroelectric layer having a high melting point used for the ferroelectric memory element is provided. An FET 20 has a stacked structure including a gate oxidation layer 24, a floating gate 26, a ferroelectric layer 28, and a control gate 30 deposited on a channel region CH in that order, the channel region CH being formed in a semiconductor substrate 22 made of silicon. The ferroelectric layer 28 consists of a thin film made of a mixed crystal composed of Sr.sub.2 (Ta.sub.1-x Nb.sub.x).sub.2 O.sub.7. The crystal structure of both Sr.sub.2 Nb.sub.2 O.sub.7 and Sr.sub.2 Ta.sub.2 O.sub.7 is pyramid quadratic structure, and their lattice constants are similar to each other. Their relative dielectric constants are low, and their melting points are high. Curie temperature related with their ferroelectricity is, however, too high in Sr.sub.2 Nb.sub.2 O.sub.7 and too low in Sr.sub.2 Ta.sub.2 O.sub.7. In order to overcome the discrepancies, the ferroelectric layer 28 having desired curie temperature is formed with a mixed crystal made of Sr.sub.2 (Ta.sub.1-x Nbx).sub.2 O.sub.7.

    摘要翻译： 提供了用于铁电存储元件的具有低介电常数的铁电层。 此外，提供了用于铁电存储元件的具有高熔点的铁电层。 FET20具有堆叠结构，该层叠结构包括依次形成在沟道区CH上的栅氧化层24，浮栅26，强电介质层28和控制栅极30，沟道区CH形成在半导体衬底22中 由硅制成 铁电层28由由Sr2（Ta1-xNbx）2O7构成的混合晶体构成的薄膜构成。 Sr2Nb2O7和Sr2Ta2O7的晶体结构是金字塔二次结构，其晶格常数相似。 它们的相对介电常数低，熔点高。 然而，与Sr2Nb2O7相比，其与铁电相关的居里温度太高，Sr2Ta2O7过低。 为了克服差异，具有希望的居里温度的铁电体层28由Sr2（Ta1-xNbx）2O7制成的混合晶体形成。