公开(公告)号：US20120184108A1

公开(公告)日：2012-07-19

申请号：US13437221

申请日：2012-04-02

申请人： Keiji Ishibashi ,  Hidenori Mikami ,  Naoki Matsumoto

发明人： Keiji Ishibashi ,  Hidenori Mikami ,  Naoki Matsumoto

IPC分类号： H01L21/302

CPC分类号： H01L21/02021 ,  C30B29/403 ,  C30B33/00 ,  H01L24/32 ,  H01L33/0075 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/12042 ,  Y10S438/928 ,  Y10S438/959 ,  Y10S438/977 ,  H01L2924/00014 ,  H01L2924/00

摘要： A nitride semiconductor wafer is planar-processed by grinding a bottom surface of the wafer, etching the bottom surface by, e.g., KOH for removing a bottom process-induced degradation layer, chamfering by a rubber whetstone bonded with 100 wt %-60 wt % #3000-#600 diamond granules and 0 wt %-40 wt % oxide granules, grinding and polishing a top surface of the wafer, etching the top surface for eliminating a top process-induced degradation layer and maintaining a 0.5 μm-10 μm thick edge process-induced degradation layer.

公开(公告)号：US08101523B2

公开(公告)日：2012-01-24

申请号：US12940733

申请日：2010-11-05

申请人： Keiji Ishibashi ,  Hidenori Mikami ,  Naoki Matsumoto

发明人： Keiji Ishibashi ,  Hidenori Mikami ,  Naoki Matsumoto

IPC分类号： H01L21/302

CPC分类号： H01L21/02021 ,  C30B29/403 ,  C30B33/00 ,  H01L24/32 ,  H01L33/0075 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/12042 ,  Y10S438/928 ,  Y10S438/959 ,  Y10S438/977 ,  H01L2924/00014 ,  H01L2924/00

摘要： A nitride semiconductor wafer is planar-processed by grinding a bottom surface of the wafer, etching the bottom surface by, e.g., KOH for removing a bottom process-induced degradation layer, chamfering by a rubber whetstone bonded with 100 wt %-60 wt % #3000-#600 diamond granules and 0 wt %-40 wt % oxide granules, grinding and polishing a top surface of the wafer, etching the top surface for eliminating a top process-induced degradation layer and maintaining a 0.5 μm-10 μm thick edge process-induced degradation layer.

摘要翻译： 氮化物半导体晶片通过研磨晶片的底面进行平面加工，例如通过KOH去除底部工艺诱导的降解层，蚀刻底面，通过与100重量％-60重量％粘合的橡胶砂轮倒角， ＃3000-＃600金刚石颗粒和0重量％-40重量％的氧化物颗粒，研磨和抛光晶片的顶表面，蚀刻顶表面以消除顶部工艺诱导的降解层并保持0.5μm-10μm厚 边缘过程诱导的降解层。

公开(公告)号：US07981216B2

公开(公告)日：2011-07-19

申请号：US10907023

申请日：2005-03-16

申请人： Keiji Ishibashi ,  Masahiko Tanaka ,  Akira Kumagai ,  Manabu Ikemoto ,  Katsuhisa Yuda

发明人： Keiji Ishibashi ,  Masahiko Tanaka ,  Akira Kumagai ,  Manabu Ikemoto ,  Katsuhisa Yuda

IPC分类号： C23C16/505

CPC分类号： C23C16/45574 ,  C23C16/452 ,  C23C16/45565

摘要： A vacuum processing apparatus, including a reactor and a partitioning plate having a plurality of through-holes through which radicals are allowed to pass and separating the reactor into a plasma generating space and a substrate process space, the process, such as a film deposition process, being carried out on a substrate placed in the substrate process space by delivering a gas into the plasma generating space for generating a plasma, producing radicals with the plasma thus generated, and delivering the radicals through the plurality of through-holes on the partitioning plate into the substrate process space. The partitioning plate includes a partitioning body having a plurality of through-holes and a control plate disposed on the plasma generating space side of the partitioning body and having radical passage holes in the positions corresponding to the plurality of through-holes on the partitioning plate.

摘要翻译： 一种真空处理装置，包括反应器和具有多个通孔的分隔板，通过该通孔使自由基通过所述通孔并将反应器分离成等离子体产生空间和基板处理空间，所述方法如成膜方法 通过将气体输送到等离子体产生空间中以产生等离子体，在由此产生的等离子体产生自由基的同时在放置在基板处理空间中的基板上进行，并且通过分隔板上的多个通孔输送自由基 进入基板工艺空间。 分隔板包括具有多个通孔的分隔体和设置在分隔体的等离子体产生空间侧的控制板，并且在与分隔板上的多个通孔对应的位置具有自由通过孔。

公开(公告)号：US20110133207A1

公开(公告)日：2011-06-09

申请号：US13016497

申请日：2011-01-28

申请人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L29/20

CPC分类号： C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02024 ,  H01L33/16 ,  H01L33/32

摘要： A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate (1) is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface (3) is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface (3) is not more than 3×1013; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface (3) is not more than 3×1013, and a haze level of the surface (3) is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface (3) is not more than 2×1014, and a haze level of the surface (3) is not more than 5 ppm.

摘要翻译： 可以形成能够形成质量良好的外延生长层的III族氮化物衬底及其制造方法。 GaN衬底（1）是以下之一：III族氮化物衬底，其中每平方厘米表面（3）的酸性材料的原子数不大于2×1014，并且硅原子数 每平方厘米的表面（3）不大于3×1013; III族氮化物衬底，其中每平方厘米表面（3）的硅原子数不大于3×1013，并且表面（3）的雾度不大于5ppm; 和III族氮化物衬底，其中每平方厘米表面（3）的酸性材料的原子数不大于2×1014，并且表面（3）的雾度水平不大于5ppm。

公开(公告)号：US07901960B2

公开(公告)日：2011-03-08

申请号：US12445681

申请日：2007-10-09

申请人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L21/00

CPC分类号： C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02024 ,  H01L33/16 ,  H01L33/32

摘要： A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface is not more than 3×1013; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface is not more than 3×1013, and a haze level of the surface is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid, material per square centimeter of a surface is not more than 2×1014, and a haze level of the surface is not more than 5 ppm.

摘要翻译： 可以形成能够形成质量良好的外延生长层的III族氮化物衬底及其制造方法。 GaN衬底是以下之一：III族氮化物衬底，其中每平方厘米表面的酸性材料的原子数不大于2×1014，并且每平方厘米表面的硅原子数 不超过3×1013; III族氮化物衬底，其中每平方厘米表面的硅原子数不大于3×1013，并且表面的雾度不大于5ppm; 和III族氮化物衬底，其中酸的原子数，每平方厘米表面的材料不大于2×1014，并且表面的雾度不大于5ppm。

公开(公告)号：US07883775B2

公开(公告)日：2011-02-08

申请号：US10566633

申请日：2003-11-12

申请人： Katsuo Kazahaya ,  Shigetaka Kawai ,  Yasushi Matsumoto ,  Keiji Ishibashi ,  Takahiro Imai

发明人： Katsuo Kazahaya ,  Shigetaka Kawai ,  Yasushi Matsumoto ,  Keiji Ishibashi ,  Takahiro Imai

IPC分类号： B32B9/00

CPC分类号： C23C16/27 ,  B23G5/06 ,  B23G2200/26 ,  B23G2225/08 ,  B23G2225/16 ,  B23G2225/28 ,  C23C16/0218 ,  Y10T428/30

摘要： The invention provides a diamond coated tool having an excellent cutting performance, wear resistance, adhesion resistance and work surface roughness in combination and a method of producing such a tool.A diamond coated tool comprising a substrate and a diamond coating formed on the surface of the substrate, wherein said substrate is made of a cemented carbide or a cermet, diamond grains constituting a growth surface of said diamond coating has an average grain size of about 1.5 micrometers or below, said diamond coating has a thickness ranging from about 0.1 micrometer to 20 micrometers, and said diamond coating has an average surface roughness Ra ranging from about 0.01 micrometer to 0.2 micrometer. Such a diamond coated tool can be obtained by carburizing the substrate consisting of a cemented carbide or a cermet, and growing up a diamond coating thereon.

摘要翻译： 本发明提供了具有优异的切削性能，耐磨性，耐粘附性和工作表面粗糙度的金刚石涂层工具的组合以及制造这种工具的方法。 一种金刚石涂层工具，包括在基底表面上形成的基底和金刚石涂层，其中所述基底由硬质合金或金属陶瓷制成，构成所述金刚石涂层的生长表面的金刚石晶粒的平均晶粒尺寸为约1.5 所述金刚石涂层具有约0.1微米至20微米的厚度，并且所述金刚石涂层的平均表面粗糙度Ra为约0.01微米至0.2微米。 这种金刚石涂层工具可以通过将由硬质合金或金属陶瓷组成的基材渗碳并在其上生长金刚石涂层来获得。

公开(公告)号：US07851381B2

公开(公告)日：2010-12-14

申请号：US11806317

申请日：2007-05-31

申请人： Keiji Ishibashi ,  Takayuki Nishiura ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Takayuki Nishiura ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L21/304 ,  B24D3/02 ,  B24B57/00

CPC分类号： H01L21/02024 ,  C09G1/02 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02052 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2924/1305 ,  Y10S438/959 ,  H01L2924/00014 ,  H01L2924/00

摘要： A surface treatment method for a nitride crystal is a surface treatment method of chemically and mechanically polishing a surface of the nitride crystal. Oxide abrasive grains are used. The abrasive grains have a standard free energy of formation of at least −850 kJ/mol as a converted value per 1 mole of oxygen molecules and have a Mohs hardness of at least 4. The surface treatment method efficiently provides, for efficiently obtaining a nitride crystal substrate that can be used for a semiconductor device, the nitride crystal having the smooth and high-quality surface formed thereon.

摘要翻译： 用于氮化物晶体的表面处理方法是对氮化物晶体的表面进行化学和机械抛光的表面处理方法。 使用氧化物磨粒。 研磨颗粒具有至少为-850kJ / mol的标准自由能，作为每1摩尔氧分子的转化值，Mohs硬度至少为4。表面处理方法有效地提供了有效地获得氮化物 可用于半导体器件的晶体衬底，其上形成有平滑和高质量表面的氮化物晶体。

公开(公告)号：US20100270649A1

公开(公告)日：2010-10-28

申请号：US12812697

申请日：2009-02-16

申请人： Keiji Ishibashi ,  Hidenori Mikami ,  Naoki Matsumoto

发明人： Keiji Ishibashi ,  Hidenori Mikami ,  Naoki Matsumoto

IPC分类号： H01L29/20

CPC分类号： H01L21/02021 ,  C30B29/403 ,  C30B33/00 ,  H01L24/32 ,  H01L33/0075 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/12042 ,  Y10S438/928 ,  Y10S438/959 ,  Y10S438/977 ,  H01L2924/00014 ,  H01L2924/00

摘要： A nitride semiconductor wafer is planar-processed by grinding a bottom surface of the wafer, etching the bottom surface by, e.g., KOH for removing a bottom process-induced degradation layer, chamfering by a rubber whetstone bonded with 100 wt %-60 wt % #3000-#600 diamond granules and 0 wt %-40 wt % oxide granules, grinding and polishing a top surface of the wafer, etching the top surface for eliminating a top process-induced degradation layer and maintaining a 0.5 μm-10 μm thick edge process-induced degradation layer.

摘要翻译： 氮化物半导体晶片通过研磨晶片的底面进行平面加工，例如通过KOH去除底部工艺诱导的降解层，蚀刻底面，通过与100重量％-60重量％粘合的橡胶砂轮倒角， ＃3000-＃600金刚石颗粒和0重量％-40重量％的氧化物颗粒，研磨和抛光晶片的顶表面，蚀刻顶表面以消除顶部工艺诱导的降解层并保持0.5μm-10μm厚 边缘过程诱导的降解层。

公开(公告)号：US20090126629A1

公开(公告)日：2009-05-21

申请号：US12285566

申请日：2008-10-08

申请人： Akira Kumagai ,  Keiji Ishibashi ,  Masahiko Tanaka

发明人： Akira Kumagai ,  Keiji Ishibashi ,  Masahiko Tanaka

IPC分类号： B05C11/00 ,  C23C16/54

CPC分类号： C23C16/45574 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32449

摘要： A film-forming system comprising a vacuum chamber and an electroconductive partition plate dividing said vacuum chamber into a plasma generating space provided with a high-frequency electrode and a film-forming treatment space provided with a substrate-retaining mechanism for holding a substrate mounted thereon. A gas for generating desired active species by discharge plasma is introduced into the plasma generating space. Said desired active species are supplied to the film-forming treatment space through a plurality of penetration holes formed in the electroconductive partition plate for communicating the plasma generating space with the film-forming treatment space. Said electroconductive partition plate has a first internal space separated from the plasma generating space and communicating with the film-forming treatment space via a plurality of material gas diffusion holes. A material gas is introduced from the outside into said first internal space and supplied into the film-forming treatment space through a plurality of said material gas diffusion holes. Said electroconductive partition plate further has a second internal space separated from said first internal space and communicating with said film-forming treatment space via a plurality of gas diffusion holes. A gas other than said material gas is introduced from the outside into said second internal space. A film is deposited on the substrate by a reaction between said active species and said material gas supplied to said film-forming treatment space.

摘要翻译： 一种膜形成系统，包括真空室和将所述真空室分成具有高频电极的等离子体产生空间和成膜处理空间的导电隔板，所述膜形成处理空间设置有用于保持其上安装的基板的基板保持机构 。 用于通过放电等离子体产生所需活性物质的气体被引入到等离子体产生空间中。 所述活性物质通过形成在导电隔板中的多个穿透孔供给到成膜处理空间，用于使等离子体产生空间与成膜处理空间连通。 所述导电隔板具有与等离子体产生空间分离的第一内部空间，并经由多个原料气体扩散孔与成膜处理空间连通。 原材料气体从外部引入到所述第一内部空间中，并通过多个所述原料气体扩散孔供入到成膜处理空间中。 所述导电隔板还具有与所述第一内部空间分离的第二内部空间，并且经由多个气体扩散孔与所述成膜处理空间连通。 除了所述材料气体以外的气体从外部引入到所述第二内部空间。 通过所述活性物质与供应到所述成膜处理空间的所述原料气体之间的反应将膜沉积在基底上。

公开(公告)号：US20090078564A1

公开(公告)日：2009-03-26

申请号：US12208557

申请日：2008-09-11

申请人： Keiji Ishibashi ,  Yoshiaki Daigo

发明人： Keiji Ishibashi ,  Yoshiaki Daigo

IPC分类号： C23C14/00

CPC分类号： C23C14/3407 ,  C23C14/165

摘要： A target structure is provided which enables sputtering of gallium or gallium-containing material in a molten state to be achieved even when the film deposition rate is increased by increasing the input electric power. A sputtering apparatus including such a target structure is also provided. The target structure includes: a holding section formed from a metal material; and gallium or gallium-containing material placed on the holding section, wherein a surface of the holding section which forms an interface with the gallium or gallium-containing material is formed thereon with a thin film having an angle of contact of not more than 30° to the gallium or gallium-containing material in a molten state. The sputtering apparatus includes this target structure.

摘要翻译： 提供了一种目标结构，即使当通过增加输入电力来提高成膜速率时，也能够实现熔融状态下的镓或镓的材料的溅射。 还提供了包括这种靶结构的溅射装置。 目标结构包括：由金属材料形成的保持部; 放置在保持部上的含镓或镓的材料，其中与含镓或镓的材料形成界面的保持部的表面上形成有接触角不大于30°的薄膜 在熔融状态下与镓或镓的材料接触。 溅射装置包括该目标结构。