公开(公告)号：US08199443B2

公开(公告)日：2012-06-12

申请号：US12073491

申请日：2008-03-06

申请人： Junichi Ito ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiro Fuji

发明人： Junichi Ito ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiro Fuji

IPC分类号： G11B5/39

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3932 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

摘要： A magneto-resistance effect element includes: a first magnetic layer of which a first magnetization is fixed in one direction; a second magnetic layer of which a second magnetization is fixed in one direction; a spacer layer located between the first magnetic layer and the second magnetic layer and made of at least one selected from the group consisting of an oxide, a nitride, an oxynitride and a metal; and a current bias generating portion, which is located adjacent to the spacer layer, for applying a bias magnetic field to the spacer layer.

摘要翻译： 磁阻效应元件包括：在一个方向上固定第一磁化的第一磁性层; 第二磁性层，其在一个方向上固定第二磁化强度; 位于第一磁性层和第二磁性层之间并由选自氧化物，氮化物，氧氮化物和金属中的至少一种构成的间隔层; 以及电位偏置产生部分，其位于与间隔层相邻的位置，用于向间隔层施加偏置磁场。

公开(公告)号：US08199429B2

公开(公告)日：2012-06-12

申请号：US12076440

申请日：2008-03-18

申请人： Hiromi Yuasa ,  Tomoko Taguchi ,  Hideaki Fukuzawa

发明人： Hiromi Yuasa ,  Tomoko Taguchi ,  Hideaki Fukuzawa

IPC分类号： G11B5/31 ,  G11B5/465

CPC分类号： G11B5/314 ,  G11B5/02 ,  G11B5/1278 ,  G11B5/3163 ,  G11B2005/0002

摘要： A magnetic recording head includes: a main magnetic pole containing a ferromagnetic layer; a main magnetic pole-magnetization fixing portion containing an antiferromagnetic layer in contact with at least one side surface of the main magnetic pole; a heater for heating at least the main magnetic pole so that a magnetic interaction between the main magnetic pole and the main magnetic pole-magnetization fixing portion can be decreased; and a magnetic field generator for generating a magnetic field so as to direct a magnetization of the main magnetic pole in one direction.

摘要翻译： 磁记录头包括：含有铁磁层的主磁极; 主磁极固定部，其包含与所述主磁极的至少一个侧面接触的反铁磁层; 用于加热至少主磁极的加热器，使得能够减小主磁极和主磁极固定部之间的磁相互作用; 以及用于产生磁场以引导主磁极在一个方向上的磁化的磁场发生器。

公开(公告)号：US20110265325A1

公开(公告)日：2011-11-03

申请号：US13135620

申请日：2011-07-11

申请人： Kunliang Zhang ,  Min Li ,  Yue Liu ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Kunliang Zhang ,  Min Li ,  Yue Liu ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： H01B19/00

CPC分类号： H01F41/307 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3106 ,  G11B5/313 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49227

摘要： A novel CCP scheme is disclosed for a CPP-GMR sensor in which an amorphous metal/alloy layer such as Hf is inserted between a lower Cu spacer and an oxidizable layer such as Al, Mg, or AlCu prior to performing a pre-ion treatment (PIT) and ion assisted oxidation (IAO) to transform the amorphous layer into a first metal oxide template and the oxidizable layer into a second metal oxide template both having Cu metal paths therein. The amorphous layer promotes smoothness and smaller grain size in the oxidizable layer to minimize variations in the metal paths and thereby improves dR/R, R, and dR uniformity by 50% or more. An amorphous Hf layer may be used without an oxidizable layer, or a thin Cu layer may be inserted in the CCP scheme to form a Hf/PIT/IAO or Hf/Cu/Al/PIT/IAO configuration. A double PIT/IAO process may be used as in Hf/PIT/IAO/Al/PIT/IAO or Hf/PIT/IAO/Hf/PIT/IAO schemes.

公开(公告)号：US07808330B2

公开(公告)日：2010-10-05

申请号：US12027650

申请日：2008-02-07

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

IPC分类号： H01L29/82 ,  B32B7/02

CPC分类号： H03B15/006 ,  B82Y25/00 ,  G01S7/006 ,  G01S7/35 ,  G01S13/345 ,  G01S2013/936 ,  H01F10/3259 ,  H01F10/329 ,  Y10T428/24942

摘要： A high-frequency oscillator includes a high-frequency oscillation element having a magnetization pinned layer whose magnetization direction is pinned substantially in one direction, an oscillation layer formed of a magnetic material which generates a high-frequency oscillation phenomenon when a current is supplied, an intermediate layer provided between the magnetization pinned layer and the oscillation layer, the intermediate layer having an insulation layer and current paths which pass through the insulation layer in a thickness direction, and a pair of electrodes which supply a current perpendicularly to a plane of a stacked film including the magnetization pinned layer, the intermediate layer and the oscillation layer.

摘要翻译： 高频振荡器包括：高频振荡元件，具有磁化被钉扎层，其磁化方向基本上被固定在一个方向上;振动层，其由在供应电流时产生高频振荡现象的磁性材料形成， 中间层设置在磁化被钉扎层和振荡层之间，中间层具有绝缘层和沿厚度方向穿过绝缘层的电流路径，以及一对电极，其垂直于堆叠的平面提供电流 膜包括磁化固定层，中间层和振荡层。

公开(公告)号：US07602592B2

公开(公告)日：2009-10-13

申请号：US11441351

申请日：2006-05-26

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

IPC分类号： G11B5/39

CPC分类号： G11B5/3929 ,  G11B5/3903 ,  G11B5/3932 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/3263 ,  H01F10/3272 ,  H01L27/224 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistive element includes at least three metallic magnetic layers, connection layers each provided between the metallic magnetic layers, and electrodes which supply a current perpendicularly to a plane of a stack of the metallic magnetic layers and the connection layers. A magnetization direction of a lowermost or uppermost metallic magnetic layer of the metallic magnetic layers is pinned, and a magnetization direction of an intermediate metallic magnetic layer is twisted such that magnetization directions of the lowermost and the uppermost metallic magnetic layers are made substantially orthogonal to each other at zero external field.

摘要翻译： 磁阻元件包括至少三个金属磁性层，各自设置在金属磁性层之间的连接层以及垂直于金属磁性层和连接层的堆叠平面提供电流的电极。 金属磁性层的最下层或最上层的金属磁性层的磁化方向被钉扎，并且中间金属磁性层的磁化方向被扭曲使得最下层和最上面的金属磁性层的磁化方向基本上与每个 其他在零外场。

公开(公告)号：US07525776B2

公开(公告)日：2009-04-28

申请号：US11269878

申请日：2005-11-09

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Katsuhiko Koui ,  Hitoshi Iwasaki

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Katsuhiko Koui ,  Hitoshi Iwasaki

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3929 ,  H01F10/3259 ,  H01L27/224 ,  H01L27/228

摘要： A magnetoresistive element has a magnetization pinned layer a magnetization direction of which is substantially pinned in one direction, a magnetization free layer a magnetization direction of which varies depending on an external field, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating the insulating layer, the magnetization pinned layer or magnetization free layer located under the spacer layer comprising crystal grains separated by grain boundaries extending across a thickness thereof, in which, supposing that an in-plane position of one end of each of the crystal grains is set to 0 and an in-plane position of a grain boundary adjacent to the other end of the crystal grain is set to 100, the current path corresponding the crystal grain is formed on a region in a range between 20 and 80 of the in-plane position.

摘要翻译： 磁阻元件具有磁化固定层，其磁化方向基本上被固定在一个方向上，磁化自由层的磁化方向根据外部磁场而变化，并且包括绝缘层的间隔层设置在磁化被钉扎层 以及穿过绝缘层的磁化自由层和电流路径，位于间隔层下方的磁化固定层或磁化自由层，其包含由跨过其厚度延伸的晶界分离的晶粒，其中，假设面内位置 将每个晶粒的一端设定为0，将与晶粒的另一端相邻的晶界的面内位置设定为100，在晶粒的区域形成与晶粒对应的电流路径 范围在平面内的20到80之间。

公开(公告)号：US20090080109A1

公开(公告)日：2009-03-26

申请号：US12213417

申请日：2008-06-19

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/187 ,  G11B5/00

CPC分类号： G11B5/66 ,  B82Y10/00 ,  G11B5/02 ,  G11B5/314 ,  G11B5/3983 ,  G11B5/743 ,  G11B5/746 ,  G11B5/82 ,  G11B2005/0002 ,  G11B2005/0024

摘要： A magnetic recording device includes: a magnetic recording medium containing a plurality of recording layers; a magnetic recording head for conducting magnetic writing of information in the magnetic recording medium; and a magnetic reproducing head for conducting magnetic reading out of the information from the magnetic recording medium; wherein the magnetic recording head includes a high frequency oscillator for magnetically assisting the magnetic writing of the information so as to change a magnetization of at least one of the plurality of recording layers of the magnetic recording medium, thereby recording a plurality of information different from one another in the magnetic recording medium commensurate with a total amount of magnetization of the plurality of recording layers.

摘要翻译： 磁记录装置包括：包含多个记录层的磁记录介质; 用于在磁记录介质中进行信息磁写入的磁记录头; 以及磁记录头，用于从磁记录介质的信息中进行磁读出; 其特征在于，所述磁记录头包括用于磁辅助所述信息的磁写入的高频振荡器，以便改变所述磁记录介质的所述多个记录层中的至少一个的磁化，从而记录与所述磁记录介质不同的多个信息 磁记录介质中的另一个与多个记录层的总磁化量相称。

公开(公告)号：US07471492B2

公开(公告)日：2008-12-30

申请号：US10895844

申请日：2004-07-22

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Susumu Hashimoto ,  Hitoshi Iwasaki

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Susumu Hashimoto ,  Hitoshi Iwasaki

IPC分类号： G11B5/127

CPC分类号： H01F10/324 ,  B82Y25/00 ,  G11B5/3906 ,  H01F10/3259 ,  H01F10/3268

摘要： A magnetoresistive element has a first magnetic layer and a second magnetic layer separate from each other, the first magnetic layer and the second magnetic layer each having a magnetization whose direction is substantially pinned, and a non-magnetic conductive layer formed in contact with the first magnetic layer and the second magnetic layer and electrically connecting the first and second magnetic layers, the non-magnetic conductive layer forming a path of spin-polarized electrons from one of the magnetic layer to the other magnetic layer, the non-magnetic conductive layer comprising a portion located between the first magnetic layer and the second magnetic layer, the portion being a sensing area.

摘要翻译： 磁阻元件具有彼此分离的第一磁性层和第二磁性层，第一磁性层和第二磁性层各自具有方向基本上被钉扎的磁化，以及形成为与第一磁性层接触的非磁性导电层 磁性层和第二磁性层，并且电连接第一和第二磁性层，非磁性导电层形成自旋极化电子的路径从一个磁性层到另一个磁性层，非磁性导电层包括 位于第一磁性层和第二磁性层之间的部分，该部分是感测区域。

公开(公告)号：US07289305B2

公开(公告)日：2007-10-30

申请号：US11074643

申请日：2005-03-09

申请人： Hiromi Fuke ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Susumu Hashimoto ,  Hitoshi Iwasaki

发明人： Hiromi Fuke ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Susumu Hashimoto ,  Hitoshi Iwasaki

IPC分类号： G11B5/127

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/325

摘要： A magnetoresistive element has a magnetization pinned layer, a nonmagnetic spacer layer including a stack of a nonmagnetic metal layer, a resistance increasing layer and another nonmagnetic metal layer, a magnetization free layer having an fcc crystal structure, a cap layer having an fcc, an hcp, or a bcc crystal structure and having an interatomic distance between nearest neighbors greater than that of the magnetization free layer, and a pair of electrodes configured to provide a sense current in a direction substantially perpendicular to planes of the magnetization pinned layer, the nonmagnetic spacer layer, and the magnetization free layer.

摘要翻译： 磁阻元件具有磁化固定层，包括非磁性金属层的堆叠的非磁性间隔层，电阻增加层和另一非磁性金属层，具有fcc晶体结构的无磁化层，具有fcc的盖层， hcp或bcc晶体结构，并且具有大于无磁化层的最近相邻物体之间的原子间距离;以及一对电极，被配置为在基本垂直于磁化钉扎层的平面的方向上提供感测电流，非磁性 间隔层和无磁化层。

公开(公告)号：US06754053B2

公开(公告)日：2004-06-22

申请号：US10108472

申请日：2002-03-29

申请人： Masatoshi Yoshikawa ,  Masashi Sahashi ,  Katsuhiko Koi ,  Hitoshi Iwasaki ,  Hiromi Yuasa ,  Hideaki Fukuzawa

发明人： Masatoshi Yoshikawa ,  Masashi Sahashi ,  Katsuhiko Koi ,  Hitoshi Iwasaki ,  Hiromi Yuasa ,  Hideaki Fukuzawa

IPC分类号： G11B5127

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3143 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3254 ,  H01F41/325

摘要： A magnetoresistance effect film including a magnetically pinned layer, a non-magnetic intermediate layer and a magnetically free layer has sidewall layers covering at least side surfaces of the magnetically pinned layer and the non-magnetic intermediate layer. The sidewall layers are made of a high-resistance oxide, nitride, fluoride, boride, sulfide or carbide having a specular reflection effect against conduction electrons, thereby to prevent non-elastic scattering of electrons and missing of spin information on side surfaces of the magnetoresistance effect film.

摘要翻译： 包括磁性钉扎层，非磁性中间层和无磁性层的磁阻效应膜具有覆盖磁性被钉扎层和非磁性中间层的至少侧面的侧壁层。 侧壁层由具有对传导电子的镜面反射效应的高电阻氧化物，氮化物，氟化物，硼化物，硫化物或碳化物制成，从而防止电子的非弹性散射和在磁阻的侧表面上缺少自旋信息 效果片。