摘要:
The invention provides a method of forming a coating film by forming in sequence a pigmented base coat and a clear top coat on a substrate followed by finishing by the two-coat one-bake technique, the method being characterized by using, as a coating composition for pigmented base coat formation, a composition comprising, as essential components thereof,(1) an OH-containing resin,(2) an amino resin,(3) a polyorganosiloxane(4) a flaky metal powder and/or a mica powder, and( 5 ) an organic solvent,and using, as a coating composition for clear top coat formation, a composition comprising, as essential components thereof,(1) an OH-containing base resin which further contains at least one group selected from the class consisting of a silanol group and a hydrolyzable group bound directly to a silicon atom,( 2 ) an amino resin, and( 3 ) an organic solvent.
摘要:
Disclosed is a composition curable at a low temperature and characterized in that the composition comprises:(a) a nonaqueous dispersion of a particulate polymer insoluble in an organic liquid and prepared by polymerizing a radical-polymerizable unsaturated monomer in the organic liquid in the presence of a dispersion stabilizer resin, the stabilizer resin being at least one of a copolymer comprising as its monomer components an oxirane-containing vinyl monomer and an alkoxysilane-containing vinyl monomer and a vinyl copolymer comprising as its monomer components a polysiloxane macromonomer and an oxirane-containing vinyl monomer,(b) a chelate compound admixed with a nonaqueous dispersion.
摘要:
Disclosed is a resin composition curable at a low temperature and characterized in that the composition comprises:(a) at least one of a copolymer comprising as its monomer components an oxirane-containing vinyl monomer and an alkoxysilane-containing vinyl monomer and a vinyl copolymer comprising at its monomer components a polysiloxane macromonomer and an oxirane-containing vinyl monomer,(b) a chelate compound, and(c) a compound having a number average molecular weight of up to about 1,000 and containing at least two alicyclic oxirane groups in the molecule.
摘要:
A nonvolatile memory device comprising a plurality of memory cells composed of insulated gate-type field effect semiconductor elements, terminals for applying a writing voltage and a reading voltage to said plurality of memory cells, wirings for connecting in common insulated gate-type field effect transistor elements of said plurality of memory cells, and resistance elements or MISFET's which are connected between the wirings and the terminals, wherein said resistance elements or MISFET's are composed of a polycrystalline silicon film or a single crystal silicon film formed on the field insulation film.
摘要:
A distributor-type fuel injection pump for an internal combustion engine, having an injection timing control device for controlling the fuel injection timing by a timer piston displaceable in response to change of the fuel pressure within a suction space of the pump filled with fuel having a pressure variable as a function of the rotational speed of the engine. The pump housing has drain passage means formed in a partition wall thereof partitioning the injection timing control device from the suction space and in the timer piston, and communicating the suction space with a zone under a lower pressure, to always drain fuel within the suction space to the lower pressure zone during the operation of the pump. Therefore, a desired fuel injection timing characteristic substantially free of a hysteresis can be obtained within a predetermined rotational speed region of the engine.
摘要:
A fuel injection advance angle control member (28) and a fuel control member (52) are manually and simultaneously controllable to increase the fuel injection angle and the volume of fuel injection, before an engine is started. A knob (112) is located in a position accessible for manipulation. A wire (110) connects the knob (112) to cams (102, 82) which are associated with the fuel injection advance angle control member (28) and the fuel control member (52), respectively. The connection between the knob (112) and the cam (102) includes a spring (210, 300) which is yieldable when the knob (112) is pulled, so that a reaction force counteracting the pulling effort is reduced to promote manipulation with a minimum of effort. Upon an engine start, the resilient force accumulated in the spring (210, 300) is released to move the member (28) to a desired advanced angle position through the cam (102).
摘要:
A semiconductor device has a passivation layer disposed on a semiconductor body having at least one circuit element therein. This layer is made of a silicon nitride material containing 0.8-5.9 weight-% of H, together with 61-70 weight-% of Si, 25-37 weight-% of N and up to 0.6 weight-% of O and has a density of 2.9-3.05 gr/cm.sup.3.
摘要:
A process for forming a metallic paint film comprising(a) coating on a substrate surface a metallic paint containing as a vehicle component a modified vinyl-type copolymer obtained by copolymerizing 5-75 weight % of cellulose acetate butyrate with 95-25 weight % of a monomeric component consisting of one or more vinyl-type monomers,(b) if necessary, coating a thermosetting resin-type clear topcoating while said coated metallic paint film is in the unhardened state and(c) then baking the paint film.
摘要:
A method for fabricating a semiconductor device is disclosed, which comprises forming a first polycrystalline silicon film containing an impurity such as phosphorus or boron on the surface of a silicon oxide film, forming an impurity-free second polycrystalline silicon film contiguous to the first polycrystalline silicon film, diffusing the impurity contained in the first polycrystalline silicon film into the second polycrystalline silicon film to form an impurity-containing region, and oxidizing the impurity-containing region to electrically separate the first and second polycrystalline silicon films from each other by the resulting oxide.
摘要:
A thermoelectric conversion material having excellent thermoelectric performance over a wide temperature range, and a thermoelectric conversion module providing excellent junctions between thermoelectric conversion materials and electrodes. An R-T-M-X-N thermoelectric conversion material has a structure expressed by the following formula: RrTt-mMmXx-nNn (0≤r≤1, 3≤t−m≤5, 0≤m≤0.5, 10≤x≤15, 0≤n≤2), where R represents three or more elements selected from the group consisting of rare earth elements, alkali metal elements, alkaline-earth metal elements, group 4 elements, and group 13 elements, T represents at least one element selected from Fe and Co, M represents at least one element selected from the group consisting of Ru, Os, Rh, Ir, Ni, Pd, Pt, Cu, Ag, and Au, X represents at least one element selected from the group consisting of P, As, Sb, and Bi, and N represents at least one element selected from Se and Te.