公开(公告)号：US08470672B2

公开(公告)日：2013-06-25

申请号：US13220756

申请日：2011-08-30

申请人： Takeshi Endo ,  Shinichiro Miyahara ,  Tomoo Morino ,  Masaki Konishi ,  Hirokazu Fujiwara ,  Jun Morimoto ,  Tsuyoshi Ishikawa ,  Takashi Katsuno ,  Yukihiko Watanabe

发明人： Takeshi Endo ,  Shinichiro Miyahara ,  Tomoo Morino ,  Masaki Konishi ,  Hirokazu Fujiwara ,  Jun Morimoto ,  Tsuyoshi Ishikawa ,  Takashi Katsuno ,  Yukihiko Watanabe

IPC分类号： H01L21/336 ,  H01L21/265

CPC分类号： H01L29/7813 ,  H01L21/30604 ,  H01L21/3065 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66068

摘要： A method of manufacturing a semiconductor device includes forming a drift layer on a substrate; forming a base layer on the drift layer; forming a trench to penetrate the base layer and to reach the drift layer; rounding off a part of a shoulder corner and a part of a bottom corner of the trench; covering an inner wall of the trench with an organic film; implanting an impurity to a surface portion of the base layer; forming a source region by activating the implanted impurity; and removing the organic film after the source region is formed, in which the substrate, the drift layer, the base layer and the source region are made of silicon carbide, and the implanting and the activating of the impurity are performed under a condition that the trench is covered with the organic film.

摘要翻译： 制造半导体器件的方法包括在衬底上形成漂移层; 在漂移层上形成基层; 形成沟槽以穿透基层并到达漂移层; 将沟槽的一部分肩部角落和底角的一部分倒圆; 用有机膜覆盖沟槽的内壁; 将杂质注入基层的表面部分; 通过激活注入的杂质形成源区; 在形成源极区域之后除去有机膜，其中基板，漂移层，基极层和源极区域由碳化硅构成，并且杂质的注入和活化在 沟槽被有机膜覆盖。

公开(公告)号：US08324704B2

公开(公告)日：2012-12-04

申请号：US12659853

申请日：2010-03-23

申请人： Takeo Yamamoto ,  Takeshi Endo ,  Eiichi Okuno ,  Hirokazu Fujiwara ,  Masaki Konishi ,  Takashi Katsuno ,  Yukihiko Watanabe

发明人： Takeo Yamamoto ,  Takeshi Endo ,  Eiichi Okuno ,  Hirokazu Fujiwara ,  Masaki Konishi ,  Takashi Katsuno ,  Yukihiko Watanabe

IPC分类号： H01L29/24 ,  H01L29/47 ,  H01L21/04

CPC分类号： H01L29/47 ,  H01L21/0465 ,  H01L21/0495 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66143 ,  H01L29/872

摘要： A silicon carbide semiconductor device with a Schottky barrier diode includes a first conductivity type silicon carbide substrate, a first conductivity type silicon carbide drift layer on a first surface of the substrate, a Schottky electrode forming a Schottky contact with the drift layer, and an ohmic electrode on a second surface of the substrate. The Schottky electrode includes an oxide layer in direct contact with the drift layer. The oxide layer is made of an oxide of molybdenum, titanium, nickel, or an alloy of at least two of these elements.

摘要翻译： 具有肖特基势垒二极管的碳化硅半导体器件包括第一导电型碳化硅衬底，在衬底的第一表面上的第一导电型碳化硅漂移层，与漂移层形成肖特基接触的肖特基电极和欧姆 电极在基板的第二表面上。 肖特基电极包括与漂移层直接接触的氧化物层。 氧化物层由钼，钛，镍或这些元素中的至少两种的合金的氧化物制成。

公开(公告)号：US08249311B2

公开(公告)日：2012-08-21

申请号：US11971746

申请日：2008-01-09

申请人： Takeshi Endo ,  Seiichiro Mori

发明人： Takeshi Endo ,  Seiichiro Mori

IPC分类号： G06K9/00

CPC分类号： G01N33/4972

摘要： In order to provide an alcohol test device which can keep evidence that an identical person has been surely tested in an alcohol test, the alcohol test device includes an alcohol test unit which measures alcohol concentration from breath exhaled by a subject; a drinking determination unit which determines whether or not the subject is in a drunken state on the basis of a measurement result of the alcohol test unit; a camera unit which photographs a face image of the subject when the breath is exhaled into the alcohol test unit; a face authentication identical person determination unit which compares a face image photographed by the camera unit with a face image of the subject himself (herself) preliminarily photographed, and performs identical person authentication which determines whether or not the subject is the identical person; a result control unit which edits combining a result of identical person authentication by the face authentication identical person determination unit and a result of drinking determination by the drinking determination unit; and a result display unit which displays a result edited by the result control unit.

摘要翻译： 为了提供一种酒精测试装置，其可以在酒精测试中证明相同的人已被确定地进行测试，该酒精测试装置包括一个酒精测试单元，其测量受试者呼出的呼吸中的酒精浓度; 饮酒确定单元，其基于所述酒精测试单元的测量结果来确定所述对象是否处于醉酒状态; 当呼吸呼出到酒精测试单元中时照相对象的脸部图像的相机单元; 面部认证相同人确定单元，其将由相机单元拍摄的面部图像与被摄体的自己的脸部图像进行比较，并执行确定对象是否是相同人物的相同人物认证; 结果控制单元，其通过面部认证相同人确定单元编辑相同人认证的结果和由饮酒确定单元进行饮酒确定的结果; 以及显示由结果控制单元编辑的结果的结果显示单元。

公开(公告)号：US20120159206A1

公开(公告)日：2012-06-21

申请号：US13314656

申请日：2011-12-08

申请人： Takeshi Endo ,  Daisuke Kawamoto

发明人： Takeshi Endo ,  Daisuke Kawamoto

IPC分类号： G06F1/26

CPC分类号： G06F1/30 ,  G06F1/1635 ,  H01M2/1022 ,  H01M2/20 ,  H01M10/46

摘要： Disclosed herein is an information processor, including: a detecting portion detecting connection between a battery pack and an information processor main body, and outputting connection information to the battery pack; a power source circuit to which an electric power is supplied from the battery pack acquiring the connection information; a manipulation portion adapted to be manipulated by a user; and a stopping portion outputting un-connection information to the battery pack when the manipulation portion is manipulated, and stopping output of the connection information even when the connection is detected by the detecting portion.

摘要翻译： 这里公开了一种信息处理器，包括：检测部分，检测电池组和信息处理器主体之间的连接，并将连接信息输出到电池组; 电源电路，从所述电池组提供从其获取所述连接信息的电力; 适于由用户操纵的操纵部分; 以及当所述操作部被操纵时，将未连接信息输出到所述电池组的停止部，以及即使当所述检测部检测到所述连接时，也停止所述连接信息的输出。

公开(公告)号：US08133787B2

公开(公告)日：2012-03-13

申请号：US12071718

申请日：2008-02-26

申请人： Takeshi Endo

发明人： Takeshi Endo

IPC分类号： H01L21/8234

CPC分类号： H01L29/66068 ,  H01L21/049 ,  H01L29/045 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/1608 ,  H01L29/51 ,  H01L29/78 ,  H01L29/7828 ,  H01L29/7838 ,  Y10S438/931

摘要： A SiC semiconductor device having a MOS structure includes: a SiC substrate; a channel region providing a current path; first and second impurity regions on upstream and downstream sides of the current path, respectively; and a gate on the channel region through the gate insulating film. The channel region for flowing current between the first and second impurity regions is controlled by a voltage applied to the gate. An interface between the channel region and the gate insulating film has a hydrogen concentration equal to or greater than 4.7×1020 cm−3. The interface provides a channel surface having a (000-1)-orientation surface.

摘要翻译： 具有MOS结构的SiC半导体器件包括：SiC衬底; 提供电流路径的信道区域; 分别在电流路径的上游侧和下游侧的第一和第二杂质区域; 以及通过栅极绝缘膜的沟道区上的栅极。 用于在第一和第二杂质区域之间流动电流的沟道区域由施加到栅极的电压来控制。 沟道区域和栅极绝缘膜之间的界面的氢浓度等于或大于4.7×1020cm-3。 界面提供具有（000-1）取向表面的通道表面。

公开(公告)号：US08116006B2

公开(公告)日：2012-02-14

申请号：US12008480

申请日：2008-01-11

申请人： Yoshie Shimizu ,  Yasushi Tanijiri ,  Takeshi Endo ,  Tetsuya Noda

发明人： Yoshie Shimizu ,  Yasushi Tanijiri ,  Takeshi Endo ,  Tetsuya Noda

IPC分类号： G02B27/14 ,  G09G5/00

CPC分类号： G02B27/0172 ,  G02B5/30 ,  G02B5/32 ,  G02B27/0103 ,  G02B2027/0112 ,  G02B2027/0174 ,  G02B2027/0178 ,  G03H2001/2231

摘要： The light directed from a light source to a concave mirror and the light directed from a display device to an eyepiece optical system are intersected by each other in a layout. This allows the light source, the concave mirror, and the display device to be arranged in compactness adjacent to the eyepiece optical system without increasing the optical power of an illumination optical system. As the result, the apparatus can easily be minimized in the thickness or the overall size. A hologram optical element is provided where the relationship between the wavelength range Δλ1 at half of the diffraction efficiency of each of the three primary colors of the light in the hologram optical element and the wavelength range Δλ2 at half of the intensity of each of the three primary colors of the light emitted from the light source is defined by Δλ1

摘要翻译： 从光源引导到凹面镜的光和从显示装置指向目镜光学系统的光在布局中彼此相交。 这允许光源，凹面镜和显示装置在与目镜光学系统相邻的紧凑状态下布置，而不增加照明光学系统的光功率。 结果，该装置可以容易地在厚度或整体尺寸上最小化。 提供了一种全息光学元件，其中全息光学元件中的光的三原色中的每一种的衍射效率的一半的波长范围＆Dgr;λ1与波长范围＆Dgr;λ2之间的关系为强度的一半 从光源发射的光的三原色中的每一个由＆Dgr;λ1<＆Dgr;λ2定义。 因此，从光源发射的光的R，G和B颜色中的每一个的期望波长的分量可以通过全息光学元件的作用被衍射，然后被引导到观察者的瞳孔。 这允许在颜色再现区域中增加图像并且提高质量，而与时分模式下的显示装置无关。

公开(公告)号：US07999982B2

公开(公告)日：2011-08-16

申请号：US12126105

申请日：2008-05-23

申请人： Takeshi Endo ,  Yoshie Shimizu

发明人： Takeshi Endo ,  Yoshie Shimizu

IPC分类号： G03H1/00 ,  G02B5/32 ,  G09G5/00

CPC分类号： G03H1/04 ,  G02B5/32 ,  G02B27/0103 ,  G02B27/1073 ,  G02B27/1086 ,  G02B2027/0109 ,  G02B2027/0123 ,  G03H2001/0439 ,  G03H2001/2231 ,  G03H2222/55

摘要： A volume-phase reflection hologram optical element is fabricated by exposing a hologram photosensitive material to two coherent light beams. One exposure light beam has an axis-asymmetric wavefront, and the other exposure light beam has focus points different in the optical axis direction (Z-direction) between on a plane (ZX-plane) including one of two directions (X- and Y-directions) mutually perpendicular on a sectional plane perpendicular to that light beam and on a plane (YZ-plane) including the other of those two directions. Thus, an image display apparatus is realized in which at the time of reproduction, the component of a predetermined wavelength of the image light diffraction-reflected by the hologram optical element is focused at positions different in the optical axis direction between on the ZX-plane and on the YZ-plane, offering different image viewing characteristics between in the X- and Y-directions.

摘要翻译： 通过将全息图感光材料曝光于两个相干光束来制造体积相位反射全息光学元件。 一个曝光光束具有轴非对称波前，另一个曝光光束在包括两个方向之一的平面（ZX平面）上的光轴方向（Z方向）上具有不同的焦点（X和Y 二维）在垂直于该光束的截面上和在包括这两个方向中的另一个的平面（YZ-平面）上相互垂直。 因此，实现了一种图像显示装置，其中在再现时，由全息光学元件衍射反射的图像光的预定波长的分量被聚焦在Z轴平面上的光轴方向上不同的位置 并且在YZ平面上，在X和Y方向之间提供不同的图像观看特性。

公开(公告)号：US07825449B2

公开(公告)日：2010-11-02

申请号：US12289624

申请日：2008-10-30

申请人： Naohiro Suzuki ,  Yuuichi Takeuchi ,  Takeshi Endo ,  Eiichi Okuno ,  Toshimasa Yamamoto

发明人： Naohiro Suzuki ,  Yuuichi Takeuchi ,  Takeshi Endo ,  Eiichi Okuno ,  Toshimasa Yamamoto

IPC分类号： H01L29/94 ,  H01L21/04 ,  H01L29/68

CPC分类号： H01L29/7813 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/47 ,  H01L29/66068 ,  H01L29/7391 ,  H01L29/7397 ,  H01L29/7828

摘要： An SiC semiconductor device and a related manufacturing method are disclosed having a structure provided with a p+-type deep layer formed in a depth equal to or greater than that of a trench to cause a depletion layer between at a PN junction between the p+-type deep layer and an n−-type drift layer to extend into the n−-type drift layer in a remarkable length, making it difficult for a high voltage, resulting from an adverse affect arising from a drain voltage, to enter a gate oxide film. This results in a capability of minimizing an electric field concentration in the gate oxide film, i.e., an electric field concentration occurring at the gate oxide film at a bottom wall of the trench.

摘要翻译： 公开了一种SiC半导体器件和相关制造方法，其具有设置有等于或大于沟槽深度形成的p +型深层的结构，以在p +型之间的PN结处引起耗尽层 深层和n型漂移层以非常长的长度延伸到n型漂移层中，使得由于漏极电压引起的不利影响导致的高电压难以进入栅极氧化膜 。 这导致使栅极氧化膜中的电场浓度最小化的能力，即在沟槽的底壁处的栅极氧化膜处发生的电场浓度。

公开(公告)号：US07808003B2

公开(公告)日：2010-10-05

申请号：US12285351

申请日：2008-10-02

申请人： Takeshi Endo ,  Eiichi Okuno

发明人： Takeshi Endo ,  Eiichi Okuno

IPC分类号： H01L29/15 ,  H01L31/0312

CPC分类号： H01L29/7802 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/7828 ,  H01L29/8083 ,  H01L29/861 ,  H01L29/872

摘要： A silicon carbide semiconductor device is disclosed. The silicon carbide semiconductor device includes a substrate; a drift layer having a first conductivity type and located on a first surface of the substrate; and a vertical type semiconductor element. The vertical type semiconductor element includes: an impurity layer having a second conductivity type, and located in a surface portion of the drift layer; and a first conductivity type region located in the drift layer, spaced away from the impurity layer, located closer to the substrate than the impurity layer, and having an impurity concentration higher than the drift layer.

摘要翻译： 公开了一种碳化硅半导体器件。 碳化硅半导体器件包括衬底; 具有第一导电类型且位于所述基板的第一表面上的漂移层; 和垂直型半导体元件。 垂直型半导体元件包括：具有第二导电类型的杂质层，并且位于漂移层的表面部分中; 以及位于漂移层中的离开杂质层的第一导电类型区域，位于比杂质层更靠近衬底的位置，并且具有高于漂移层的杂质浓度。

公开(公告)号：US20100110865A1

公开(公告)日：2010-05-06

申请号：US12606705

申请日：2009-10-27

申请人： Takeshi Endo ,  Hiroshi Hatano ,  Tetsuya Noda ,  Kazutaka Noguchi ,  Hiroyuki Matsuda ,  Shigeru Yamasaki

发明人： Takeshi Endo ,  Hiroshi Hatano ,  Tetsuya Noda ,  Kazutaka Noguchi ,  Hiroyuki Matsuda ,  Shigeru Yamasaki

IPC分类号： G11B7/135 ,  G11B23/03

CPC分类号： G11B7/083 ,  G11B7/0065 ,  G11B7/082 ,  G11B7/1362

摘要： An optical information recording and reproducing apparatus relating to the invention employs a two-beam interference method. In the optical information recording and reproducing apparatus, a moving device moves an information recording medium between a recording and reproducing position and a retracting position, and a mirror moves together with the information recording medium. When the information recording medium moves to the recording and reproducing position, the mirror moves to a position which is displaced from the at least one of the reference beam and the information beam. When the information recording medium moves to the retracting position, the mirror moves to a position where the mirror can reflect the at least one of the reference beam and the information beam toward a detector for detecting a deviation of the at least one of the reference beam and the information beam.

摘要翻译： 本发明的光信息记录再现装置采用双光束干涉法。 在光学信息记录和再现装置中，移动装置在记录和再现位置与缩回位置之间移动信息记录介质，并且反射镜与信息记录介质一起移动。 当信息记录介质移动到记录和再现位置时，反射镜移动到从参考光束和信息光束中的至少一个偏移的位置。 当信息记录介质移动到缩回位置时，反射镜移动到反射镜可以将参考光束和信息光束中的至少一个反射到检测器的位置，用于检测参考光束中的至少一个的偏差 和信息光束。