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公开(公告)号：US20040008995A1
公开(公告)日：2004-01-15
申请号：US10614277
申请日：2003-07-08
发明人： Haruyoshi Ono , Isao Baba
IPC分类号： H04B010/12
CPC分类号： H04B10/572 , H04B10/564
摘要： An optical communication module includes: a laser light emitting unit that emits laser light; a temperature control unit that controls the temperature of the laser light emitting unit; a power intensity control unit that controls the power intensity of the laser light emitted from the laser light emitting unit; and a setting value storage unit that stores a setting value determined from an optimum power intensity that maintains a predetermined wavelength and satisfies predetermined temperature conditions and predetermined power intensity conditions, and from an optimum temperature that maintains the predetermined wavelength and satisfies the predetermined temperature conditions and the predetermined power intensity conditions. In this optical communication module, the temperature control unit and the power intensity control unit control the temperature and the power intensity of the laser light emitting unit, based on the setting value stored in the setting value storage unit.
摘要翻译： 光通信模块包括：发射激光的激光发射单元; 温度控制单元，控制激光发射单元的温度; 功率强度控制单元，其控制从所述激光发射单元发射的激光的功率强度; 以及设定值存储单元，其存储从保持预定波长并满足预定温度条件和预定功率强度条件的最佳功率强度确定的设定值以及从保持预定波长并满足预定温度条件的最佳温度， 预定功率强度条件。 在该光通信模块中，温度控制单元和功率强度控制单元根据存储在设定值存储单元中的设定值来控制激光发光单元的温度和功率强度。
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公开(公告)号：US20030185257A1
公开(公告)日：2003-10-02
申请号：US10349035
申请日：2003-01-23
发明人： Shinya Suzuki , Hiromitsu Kawamura
IPC分类号： H01S003/10 , H01S003/00 , H01S005/00
CPC分类号： H01S5/042 , H01S5/0265 , H01S5/0683
摘要： An optical semiconductor device includes an element in which a laser diode and an optical modulator are integrated, and a circuit that sets a common node of the laser diode and the optical modulator at a reference potential different from a ground potential and drives the laser diode and the optical modulator in opposite directions with respect to the reference potential.
摘要翻译： 光学半导体器件包括其中集成有激光二极管和光调制器的元件，以及将激光二极管和光调制器的公共节点设置在不同于地电位的参考电位并驱动激光二极管的电路， 光调制器相对于参考电位相反。
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公开(公告)号：US20030183864A1
公开(公告)日：2003-10-02
申请号：US10396461
申请日：2003-03-26
发明人： Naoyuki Miyazawa
IPC分类号： H01L029/00 , H01L027/108
CPC分类号： H01L27/0805
摘要： A device includes a transistor, and two interdigital capacitors. The transistor is located on an imaginary extension line aligned with a common electrode of the two interdigital capacitors.
摘要翻译： 器件包括晶体管和两个交指电容器。 晶体管位于与两个指数间电容器的公共电极对准的虚拟延伸线上。
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公开(公告)号：US20030053761A1
公开(公告)日：2003-03-20
申请号：US10244757
申请日：2002-09-17
发明人： Taketo Kawano , Koichi Iwaida , Atsushi Ugai
IPC分类号： G02B006/36
CPC分类号： G02B6/3835 , G02B6/3887
摘要： An optical device includes a rigid pipe provided to cover the outer peripheries of a fixing joint portion and an optical fiber. The tip portion of the rigid pipe has a gap for providing flexibility between the optical fiber and the tip portion. Therefore, the rigid pipe suppresses bending of the optical fiber to avoid concentration of stress in the fixing joint portion for fixing the optical fiber to an optical unit section, thereby avoiding breakage of the optical fiber in the fixing joint portion.
摘要翻译： 光学装置包括设置成覆盖固定接合部分和光纤的外周的刚性管。 刚性管的尖端部分具有用于在光纤和尖端部分之间提供柔性的间隙。 因此，刚性管抑制光纤的弯曲，以避免在用于将光纤固定到光学单元部分的固定接合部分中的应力集中，从而避免光纤在固定接合部分中的断裂。
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公开(公告)号：US20030052413A1
公开(公告)日：2003-03-20
申请号：US10241522
申请日：2002-09-12
发明人： Takahisa Kawai
IPC分类号： H01L023/48
CPC分类号： H03H9/0542 , H01L23/647 , H01L24/48 , H01L24/49 , H01L2224/05599 , H01L2224/16 , H01L2224/16225 , H01L2224/45099 , H01L2224/48137 , H01L2224/49175 , H01L2224/85399 , H01L2924/00014 , H01L2924/09701 , H01L2924/1305 , H01L2924/181 , H01L2924/19041 , H01L2924/19107 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H03H9/0547 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2924/00012
摘要： A semiconductor device includes a SAW device chip. The SAW device chip is provided on a passive element chip in which a passive element circuit including a transmission line is formed on a semi-insulating compound substrate having one surface set to have a ground potential electrode. In the semiconductor device, even when the width of the transmission line is increased, a high characteristic impedance can be maintained by increasing the thickness of the substrate. This can reduce the resistance of the transmission line and can facilitate matching with the SAW device.
摘要翻译： 半导体器件包括SAW器件芯片。 SAW器件芯片设置在无源元件芯片上，其中包括传输线的无源元件电路形成在具有设置为具有接地电位电极的一个表面的半绝缘复合衬底上。 在半导体器件中，即使传输线的宽度增加，也可以通过增加衬底的厚度来保持高特性阻抗。 这可以降低传输线的电阻，并且可以有助于与SAW器件的匹配。
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公开(公告)号：US20030001678A1
公开(公告)日：2003-01-02
申请号：US10175497
申请日：2002-06-20
发明人： Shigemi Miyazawa
IPC分类号： H03F003/08
摘要： A semiconductor amplifier circuit comprises a transimpedance amplifier for amplifying an input signal; a by-pass transistor connected between an input terminal of the transimpedance amplifier and the ground potential; a first resistor, one end of the first resistor being connected to an output terminal of the transimpedance amplifier; a capacitor connected between the other end of the first resistor and the ground potential; a second resistor connected between the other end of the first resistor and the gate of the by-pass transistor via an inverter; and a differential amplifier having a signal input terminal connected to the output terminal of the transimpedance amplifier and a reference-voltage input terminal connected to the other end of the first resistor.
摘要翻译： 半导体放大器电路包括用于放大输入信号的跨阻放大器; 连接在跨阻放大器的输入端和地电位之间的旁路晶体管; 第一电阻器，第一电阻器的一端连接到跨阻放大器的输出端子; 连接在第一电阻器的另一端和地电位之间的电容器; 连接在所述第一电阻器的另一端和旁通晶体管的栅极之间的第二电阻器，经由反相器; 以及差分放大器，其具有连接到跨阻放大器的输出端子的信号输入端子和连接到第一电阻器的另一端的基准电压输入端子。
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公开(公告)号：US20020172243A1
公开(公告)日：2002-11-21
申请号：US10143945
申请日：2002-05-14
发明人： Haruyoshi Ono , Isao Baba
IPC分类号： H01S003/13 , H01S003/04
CPC分类号： H01S5/0014 , H01S5/0612 , H01S5/06812 , H01S5/0687
摘要： In the semiconductor laser module testing device, a temperature control power source changes a temperature of a wavelength locker module, and a wavelength monitoring bias circuit detects an output of a wavelength monitor in the changed temperature range and computes a correlation between a temperature of a semiconductor laser and a wavelength of light output therefrom. Moreover, the wavelength of the output light is locked by controlling the temperature of the wavelength locker module while feeding back the output of the wavelength monitor by a wavelength feedback circuit based on the obtained correlation between the temperature and the wavelength.
摘要翻译： 在半导体激光器模块测试装置中，温度控制电源改变波长锁定器模块的温度，并且波长监视偏置电路在改变的温度范围内检测波长监视器的输出，并且计算半导体的温度之间的相关性 激光和从其输出的光的波长。 此外，通过基于获得的温度和波长之间的相关性，通过波长反馈电路反馈波长监视器的输出来控制波长锁定模块的温度来锁定输出光的波长。
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88.发明申请公开(公告)号：US20020140088A1
公开(公告)日：2002-10-03
申请号：US10084921
申请日：2002-03-01
发明人： Yoshio Aoki , Yutaka Mimino , Osamu Baba , Muneharu Gotoh
IPC分类号： H01L023/34
CPC分类号： H01L23/522 , H01L23/66 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor integrated circuit has a 3-dimmensional interconnection line structure for high-speed operation. One aspect of the present invention, there is provided a monolithic microwave integrated circuit (MMIC) having a 3-dimmensional tournament tree shaped multilayer interconnection lines, wherein a single electric feeding point on a top surface of the MMIC is divided, layer by layer, into plural electrodes on the semiconductor substrate of the MMIC via a plurality of laminated interconnection layers and vertical interconnection layers therebetween shaped like a tournament tree.
摘要翻译： 半导体集成电路具有用于高速操作的3维互连线结构。 本发明的一个方面提供了一种具有三维比赛树形多层互连线的单片微波集成电路（MMIC），其中，MMIC的顶表面上的单个馈电点逐层分割， 通过多个层压互连层和其间形成像锦标赛树的垂直互连层，在MMIC的半导体衬底上形成多个电极。
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公开(公告)号：US20020140007A1
公开(公告)日：2002-10-03
申请号：US10100061
申请日：2002-03-19
发明人： Kazuyuki Sakamoto
IPC分类号： H01L021/44 , H01L021/4763 , H01L029/80 , H01L031/112
CPC分类号： H01L23/4821 , H01L23/5221 , H01L2924/0002 , H01L2924/00
摘要： A protective pattern is formed on a semiconductor substrate in a shape covering a circuit region and exposing an air bridge connecting portion, a metallic film and an insulating film are formed to cover the protective pattern, the metallic film and the insulating film are patterned to form air bridge wiring and an air bridge protective film covering the air bridge wiring, and thereafter, the protective pattern is removed to form a hollow between the air bridge wiring and the circuit region.
摘要翻译： 在覆盖电路区域的形状的半导体基板上形成保护图案，露出气桥连接部，形成金属膜和绝缘膜以覆盖保护图案，将金属膜和绝缘膜图案化以形成 空气桥接线和覆盖空气桥接线的空气桥保护膜，然后去除保护图案，以在空气桥接线和电路区域之间形成中空。
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公开(公告)号：US20020139993A1
公开(公告)日：2002-10-03
申请号：US10090614
申请日：2002-03-06
发明人： Yoshio Aoki , Yutaka Mimino , Osamu Baba , Muneharu Gotoh
IPC分类号： H01L031/072 , H01L031/109 , H01Q001/48
CPC分类号： H01Q1/526 , H01L23/552 , H01L2924/0002 , H01Q1/48 , H01Q9/0407 , H01L2924/00
摘要： In a high frequency semiconductor device, a shield plate which is connected to the ground potential is provided above an MMIC structure including line conductors, with an insulating interlayer provided therebetween. By using the shield plate to shield the MMIC, interference caused by external electromagnetic waves or leakage of electromagnetic waves to the exterior can be reduced in a chip alone.
摘要翻译： 在高频半导体器件中，连接到地电势的屏蔽板设置在包括线导体的MMIC结构之上，其间设置有绝缘夹层。 通过使用屏蔽板来屏蔽MMIC，可以仅在芯片中减少由外部电磁波引起的干扰或电磁波泄漏到外部的干扰。
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