Diffraction order controlled overlay metrology
    81.
    发明申请
    Diffraction order controlled overlay metrology 有权
    衍射顺序控制重叠度量

    公开(公告)号:US20060197951A1

    公开(公告)日:2006-09-07

    申请号:US11363755

    申请日:2006-02-27

    CPC classification number: G03F9/7049 G03F7/70633 G03F9/7088

    Abstract: In one embodiment, a system for imaging an acquisition target or an overlay or alignment semiconductor target is disclosed. The system includes a beam generator for directing at least one incident beam having a wavelength λ towards a periodic target having structures with a specific pitch p. A plurality of output beams are scattered from the periodic target in response to the at least one incident beam. The system further includes an imaging lens system for passing only a first and a second output beam from the target. The imaging system is adapted such that the angular separation between the captured beams, λ, and the pitch are selected to cause the first and second output beams to form a sinusoidal image. The system also includes a sensor for imaging the sinusoidal image or images, and a controller for causing the beam generator to direct the at least one incident beam towards the periodic target or targets, and for analyzing the sinusoidal image or images. In one application the detector detects a sinusoidal image of an acquisition target with the same pitch as the designed target and the controller analyzes the pitch of the sinusoidal image compared to design data to determine whether the target has been successfully acquired. In a second application a first and second periodic target that each have a specific pitch p are imaged so that the detector detects a first sinusoidal image of the first target and a second sinusoidal image of the second target and the controller analyzes the first and second sinusoidal image to determine whether the first and second targets have an overlay or alignment error.

    Abstract translation: 在一个实施例中,公开了一种用于对采集目标或覆盖或对准半导体目标进行成像的系统。 该系统包括用于将具有波长λ的至少一个入射光束朝向具有特定间距p的结构的周期性目标引导的光束发生器。 响应于至少一个入射光束,多个输出光束从周期性靶标散射。 该系统还包括用于仅从目标通过第一和第二输出光束的成像透镜系统。 成像系统被适配成使得捕获的光束λ和间距之间的角度间隔被选择为使得第一和第二输出光束形成正弦图像。 该系统还包括用于对正弦图像或图像进行成像的传感器,以及控制器,用于使光束发生器将至少一个入射光束引向周期性目标或目标,并用于分析正弦图像或图像。 在一个应用中,检测器以与设计目标相同的间距检测采集目标的正弦图像,并且控制器分析与设计数据相比的正弦图像的间距,以确定目标是否已被成功获取。 在第二应用中,每个具有特定间距p的第一和第二周期性目标成像,使得检测器检测第一目标的第一正弦图像和第二目标的第二正弦图像,并且控制器分析第一和第二正弦曲线 图像以确定第一和第二目标是否具有覆盖或对齐错误。

    Method and apparatus using microscopic and interferometric based detection
    82.
    发明授权
    Method and apparatus using microscopic and interferometric based detection 有权
    使用基于微观和干涉测量的检测方法和装置

    公开(公告)号:US07095507B1

    公开(公告)日:2006-08-22

    申请号:US10673058

    申请日:2003-09-26

    CPC classification number: G01B11/2441 G01N21/95607

    Abstract: An integrated interferometric and intensity based microscopic inspection system inspects semiconductor samples. A switchable illumination module provides illumination switchable between interferometric inspection and intensity based microscopic inspection modes. Complex field information is generated from interference image signals received at a sensor. Intensity based signals are used to perform the microscopic inspection. The system includes at least one illumination source for generating an illumination beam and an integrated interferometric microscope module for splitting the illumination beam into a test beam directed to the semiconductor sample and a reference beam directed to a tilted reference mirror. The beams are combined to generate an interference image at an image sensor. The tilted reference mirror is tilted with respect to the reference beam that is incident on the mirror to thereby generate fringes in the interference image. The system also includes an image sensor for acquiring the interference image from the inteferometric microscope module and intensity signals from the microscopic inspection image.

    Abstract translation: 集成的干涉测量和强度显微镜检查系统检查半导体样品。 可切换照明模块提供可在干涉检查和基于强度的显微镜检查模式之间切换的照明。 复杂场信息是从传感器接收的干扰图像信号产生的。 使用基于强度的信号进行显微镜检查。 该系统包括用于产生照明光束的至少一个照明源和用于将照明光束分成指向半导体样品的测试光束和指向倾斜参考反射镜的参考光束的集成干涉显微镜模块。 光束被组合以在图像传感器处产生干涉图像。 倾斜的参考反射镜相对于入射在反射镜上的参考光束倾斜,从而在干涉图像中产生条纹​​。 该系统还包括用于从该超微量显微镜模块获取干涉图像的图像传感器和来自显微镜检查图像的强度信号。

    Variable illuminator and speckle buster apparatus
    83.
    发明申请
    Variable illuminator and speckle buster apparatus 有权
    可变照明器和斑点破碎装置

    公开(公告)号:US20060152810A1

    公开(公告)日:2006-07-13

    申请号:US11055893

    申请日:2005-02-11

    Applicant: Damon Kvamme

    Inventor: Damon Kvamme

    Abstract: Disclosed is an apparatus for illuminating a sample. In one embodiment, this apparatus includes a laser for outputting an incident laser beam towards a sample and a first diffractive element having a plurality of diffraction pattern portions. The first diffractive element is movable so that each of its diffraction pattern portions can be selectively positioned in the incident beam's path and the diffraction pattern portions of the first diffractive element are designed to cause the incident beam to have different spatial illumination profiles at a pupil plane of the incident beam while reducing effects caused by the incident beam's coherence. The apparatus further includes an illumination profile element configured to spatially distribute light at an illumination plane of the incident beam and a plurality of illumination optical elements for directing the incident beam towards the sample. In a specific implementation, each of the first diffractive element's diffractive pattern portions is an annular section that is selectively positionable in the incident beam's path and the first diffractive element is rotatable so as to position different cells of its selected annular section into the incident beam's path to thereby reduce effects caused by the incident beam's coherence.

    Abstract translation: 公开了一种用于照亮样品的装置。 在一个实施例中,该装置包括用于向样本输出入射激光束的激光器和具有多个衍射图案部分的第一衍射元件。 第一衍射元件是可移动的,使得其每个衍射图案部分可以选择性地定位在入射光束的路径中,并且第一衍射元件的衍射图案部分被设计成使入射光束在光瞳面处具有不同的空间照度分布 的入射光束,同时减少由入射光束的一致性引起的影响。 该装置还包括配置成在入射光束的照明平面处空间分布光的照明轮廓元件和用于将入射光束引向样品的多个照明光学元件。 在具体实现中,第一衍射元件的衍射图案部分中的每一个是可选择性地定位在入射光束的路径中的环形部分,并且第一衍射元件可旋转,以便将其选定的环形部分的不同单元定位成入射光束的路径 从而减少由入射光束的一致性引起的影响。

    Apparatus and methods for semiconductor IC failure detection

    公开(公告)号:US07067335B2

    公开(公告)日:2006-06-27

    申请号:US10264625

    申请日:2002-10-02

    CPC classification number: H01L22/34 G01N21/9501 G01R31/2644 G01R31/307

    Abstract: An improved voltage contrast test structure is disclosed. In general terms, the test structure can be fabricated in a single photolithography step or with a single reticle or mask. The test structure includes substructures which are designed to have a particular voltage potential pattern during a voltage contrast inspection. For example, when an electron beam is scanned across the test structure, an expected pattern of intensities are produced and imaged as a result of the expected voltage potentials of the test structure. However, when there is an unexpected pattern of voltage potentials present during the voltage contrast inspection, this indicates that a defect is present within the test structure. To produce different voltage potentials, a first set of substructures are coupled to a relatively large conductive structure, such as a large conductive pad, so that the first set of substructures charges more slowly than a second set of substructures that are not coupled to the relatively large conductive structure. Mechanisms for fabricating such a test structure are also disclosed. Additionally, searching mechanisms for quickly locating defects within such a test structure, as well as other types of voltage contrast structures, during a voltage contrast inspection are also provided.

    Test patterns for optical measurements on multiple binary gratings
    85.
    发明授权
    Test patterns for optical measurements on multiple binary gratings 有权
    用于多个二进制光栅上的光学测量的测试图案

    公开(公告)号:US07049844B1

    公开(公告)日:2006-05-23

    申请号:US11007140

    申请日:2004-12-08

    Applicant: Carlos Ygartua

    Inventor: Carlos Ygartua

    CPC classification number: H01L22/34

    Abstract: A film stack adapted to enable optical readings on a film stack. Multiple gratings layers are disposed within transparent layers, and include a topmost grating layer, a bottommost grating layer, and at least one intervening grating layer. Each one of the grating layers have a pitch between substantially opaque portions of the grating layer and substantially transparent portions of the grating layer. The substantially opaque portions of the bottommost grating layer are laterally disposed at an offset from the substantially opaque portions of the topmost grating layer. The substantially opaque portions of the at least one intervening grating layer are laterally disposed between the opaque portions of the bottommost grating layer and the substantially opaque portions of the topmost grating layer.

    Abstract translation: 适用于使胶片堆叠上的光学读数的胶片堆叠。 多个光栅层设置在透明层内,并且包括最顶层的光栅层,最下面的光栅层和至少一个中间的光栅层。 每个光栅层在光栅层的基本上不透明的部分和光栅层的基本上透明的部分之间具有间距。 最下面的光栅层的基本上不透明的部分横向设置在与最顶层光栅层的基本上不透明的部分偏移处。 至少一个中间光栅层的基本上不透明的部分横向设置在最下面的光栅层的不透明部分和最上面的光栅层的基本上不透明的部分之间。

    Full swath analysis
    86.
    发明申请
    Full swath analysis 有权
    全幅分析

    公开(公告)号:US20060106580A1

    公开(公告)日:2006-05-18

    申请号:US11314627

    申请日:2005-12-21

    CPC classification number: G06T7/0004 G06T2207/30148

    Abstract: An inspection system for detecting anomalies on a substrate. The inspection system has a sensor array for generating image data. A first high speed network is coupled to the sensor array and receives and communicates the image data. An array of process nodes is coupled to the first high speed network, and receives and processes the image data to produce anomaly reports. Each of the process nodes has an amount of memory that is sufficient to receive image data representing a plurality of dice on an integrated circuit wafer, and each of the process nodes performs analysis on the plurality of dice. Each process node has an interface card coupled to the first high speed network, that receives the image data from the first high speed network and formats the image data according to a high speed interface bus protocol. A high speed interface bus is coupled to the interface card, receives the image data from the interface card. A computer is coupled to the high speed interface bus, and receives the image data from the high speed interface bus and processes the image data according to an algorithm, to produce the anomaly report. A second high speed network is coupled to the process nodes, and receives the anomaly reports from the process nodes. A job manager is coupled to the second high speed network, and receives the anomaly reports from the process nodes and sends information to the process nodes to coordinate the processing of the image data in the array of process nodes.

    Abstract translation: 用于检测基板上的异常的检查系统。 检查系统具有用于生成图像数据的传感器阵列。 第一高速网络耦合到传感器阵列并接收并传送图像数据。 一系列过程节点耦合到第一高速网络,并接收和处理图像数据以产生异常报告。 每个处理节点具有足以接收表示集成电路晶片上的多个骰子的图像数据的存储器量,并且每个处理节点对多个骰子执行分析。 每个处理节点具有耦合到第一高速网络的接口卡,其接收来自第一高速网络的图像数据,并且根据高速接口总线协议格式化图像数据。 高速接口总线耦合到接口卡,从接口卡接收图像数据。 计算机耦合到高速接口总线,并从高速接口总线接收图像数据,并根据算法对图像数据进行处理,以产生异常报告。 第二高速网络耦合到进程节点,并从进程节点接收异常报告。 作业管理器耦合到第二高速网络,并且从进程节点接收异常报告,并向进程节点发送信息以协调处理节点阵列中的图像数据的处理。

    Multiple design database layer inspection
    87.
    发明授权
    Multiple design database layer inspection 有权
    多设计数据库层检查

    公开(公告)号:US07027635B1

    公开(公告)日:2006-04-11

    申请号:US10193965

    申请日:2002-07-10

    CPC classification number: G06T7/001 G03F1/30 G03F1/50 G03F1/84 G06T2207/30148

    Abstract: Techniques that use the design databases used in each of the expose/etch steps during construction of phase shift masks are described. A model or reference image is rendered, accounting for systematic variations, from the design databases to represent what a layer of the PSM should look like after processing. The reference image is compared to an optically acquired image of a specimen phase shift mask to find defects. The technique of the present invention can be used to inspect EAPSM, APSM and tritone masks. The technique inspects all layers in one pass and is therefore more efficient.

    Abstract translation: 描述了在构造相移掩模期间使用在每个曝光/蚀刻步骤中使用的设计数据库的技术。 渲染来自设计数据库的模型或参考图像,以计算系统的变化,以表示处理后的PSM层的外观。 将参考图像与样本相移掩模的光学获取图像进行比较以发现缺陷。 本发明的技术可用于检查EAPSM,APSM和三色面罩。 该技术在一次通过中检查所有层,因此效率更高。

    Full swath analysis
    88.
    发明授权
    Full swath analysis 有权
    全幅分析

    公开(公告)号:US07024339B1

    公开(公告)日:2006-04-04

    申请号:US10967838

    申请日:2004-10-18

    CPC classification number: G06T7/0004 G06T2207/30148

    Abstract: An inspection system for detecting anomalies on a substrate. A first network is coupled to a sensor array and communicates image data. Process nodes are coupled to the first network, and processes the data to produce reports. Each process node has an interface card that formats the data for a high speed interface bus that is coupled to the interface card. A computer receives and processes the data to produce the anomaly report. A second network receives the anomaly reports from the process nodes. A job manager is coupled to the second network, and receives the anomaly reports from the process nodes and sends information to the process nodes to coordinate the processing of the data in the process nodes.

    Abstract translation: 用于检测基板上的异常的检查系统。 第一网络耦合到传感器阵列并传送图像数据。 过程节点耦合到第一个网络,并处理数据以产生报告。 每个进程节点都有一个接口卡,格式化耦合到接口卡的高速接口总线的数据。 计算机接收并处理数据以产生异常报告。 第二个网络从进程节点接收异常报告。 作业管理器耦合到第二网络,并且从进程节点接收异常报告,并向进程节点发送信息以协调处理节点中的数据的处理。

    Concurrent measurement and cleaning of thin films on silicon-on-insulator (SOI)
    90.
    发明授权
    Concurrent measurement and cleaning of thin films on silicon-on-insulator (SOI) 有权
    同时测量和清洁绝缘体上硅(SOI)上的薄膜

    公开(公告)号:US07006222B2

    公开(公告)日:2006-02-28

    申请号:US10339518

    申请日:2003-01-08

    Inventor: Shankar Krishnan

    CPC classification number: G01J4/00 G01B11/06 G01B11/065

    Abstract: A system for performing single wavelength ellipsometry (SWE) on a thin film on a multi-layer substrate such as silicon-on-insulator (SOI) applies a measurement beam having an absorption distance less than the thickness of the superficial layer of the multi-layer substrate. For example, for an SOI substrate, the measurement beam is selected to have a wavelength that results in an absorption distance that is less than the superficial silicon layer thickness. The system can include a cleaning laser to provide concurrent cleaning to enhance measurement accuracy without negatively impacting throughput. The measurement beam source can be configured to provide a measurement beam at one wavelength and a cleaning beam at a longer wavelength, so that the absorption depth of the measurement beam is less than the superficial layer thickness while the absorption depth of the cleaning beam is greater than the superficial layer thickness.

    Abstract translation: 在诸如绝缘体上硅(SOI)的多层基板上的薄膜上执行单波长椭偏仪(SWE)的系统应用具有小于多层膜的表层的厚度的吸收距离的测量光束, 层基板。 例如,对于SOI衬底,测量光束被选择为具有导致小于表面硅层厚度的吸收距离的波长。 该系统可以包括清洁激光器以提供同时清洁以提高测量精度,而不会不利地影响生产量。 测量光束源可以被配置为提供一个波长的测量光束和较长波长的清洁光束,使得测量光束的吸收深度小于表面层厚度,而清洁光束的吸收深度更大 比表面层厚度。

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