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公开(公告)号：US12041800B2
公开(公告)日：2024-07-16
申请号：US17777384
申请日：2020-11-11
发明人： Takuro Kanemura , Yusuke Negoro
IPC分类号： H10K39/32
CPC分类号： H10K39/32
摘要： An imaging device having a color imaging function and an infrared imaging function is provided. The imaging device has a structure in which a first photoelectric conversion device and a second photoelectric conversion device are stacked, and the second photoelectric conversion device generates electric charge by absorbing infrared light and transmits light having a wavelength of a higher energy than that of infrared light. The first photoelectric conversion device is positioned to overlap with the second photoelectric conversion device, and generates electric charge by absorbing light (visible light) passing through the second photoelectric conversion device. Thus, a subpixel for color imaging and a subpixel for infrared imaging can be positioned to overlap with each other, and an infrared imaging function can be added without a decrease in the definition of color imaging.
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公开(公告)号：US12041366B2
公开(公告)日：2024-07-16
申请号：US17911193
申请日：2021-03-15
IPC分类号： H04N25/78 , H04N25/705 , H04N25/77
CPC分类号： H04N25/705 , H04N25/77 , H04N25/78
摘要： An imaging device having a function of processing an image is provided. The imaging device has an additional function such as image processing, can hold analog data obtained by an image capturing operation in a pixel, and can extract data obtained by multiplying the analog data by a predetermined weight coefficient. Difference data between adjacent light-receiving devices can be obtained in a pixel, and data on luminance gradient can be obtained. When the data is taken in a neural network or the like, inference of distance data or the like can be performed. Since enormous volume of image data in the state of analog data can be held in pixels, processing can be performed efficiently.
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公开(公告)号：US12040653B2
公开(公告)日：2024-07-16
申请号：US17283689
申请日：2019-10-15
发明人： Munehiro Kozuma , Takayuki Ikeda , Takanori Matsuzaki , Kei Takahashi , Mayumi Mikami , Shunpei Yamazaki
IPC分类号： H02J7/00 , G11C11/401 , H01L27/06 , H01M10/0525 , H01M10/42 , H01M10/48 , H01M10/613 , H01M10/615 , H01M10/625 , H01M10/633
CPC分类号： H02J7/007194 , G11C11/401 , H01M10/0525 , H01M10/425 , H01M10/4257 , H01M10/48 , H01M10/486 , H01M10/613 , H01M10/615 , H01M10/625 , H01M10/633 , H02J7/0029 , H02J7/0047 , H01L27/0629 , H01M2010/4271 , H01M2220/20
摘要： The safety is ensured in such a manner that with an abnormality detection system of a secondary battery, abnormality of a secondary battery is detected, for example, a phenomenon that lowers the safety of the secondary battery is detected early, and a user is warned or the use of the secondary battery is stopped. The abnormality detection system of the secondary battery determines whether the temperature of the secondary battery is within a temperature range in which normal operation can be performed on the basis of temperature data obtained with a temperature sensor. In the case where the temperature of the secondary battery is high, a cooling device is driven by a control signal from the abnormality detection system of the secondary battery. The abnormality detection system of the secondary battery includes at least a memory means. The memory means has a function of holding an analog signal and includes a transistor using an oxide semiconductor for a semiconductor layer.
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公开(公告)号：US12040333B2
公开(公告)日：2024-07-16
申请号：US18022329
申请日：2021-08-17
发明人： Satoshi Yoshimoto , Koji Kusunoki , Kazunori Watanabe , Susumu Kawashima , Marina Hiyama , Motoharu Saito
CPC分类号： H01L27/1248 , G09G3/20 , G09G2300/0426 , G09G2310/0286 , G09G2310/0291 , G09G2310/08 , G09G2330/021
摘要： A highly functional semiconductor device is provided. The semiconductor device includes a first transistor and a second transistor. The first transistor includes a first semiconductor layer, a first gate electrode, a first electrode, and a second electrode. The second transistor includes a second semiconductor layer, a second gate electrode, a third electrode, and a fourth electrode. The first gate electrode and the second gate electrode are connected to each other, and the second electrode and the third electrode are connected to each other. A first insulating layer, a second insulating layer, and a second semiconductor layer are stacked over the first semiconductor layer. The first insulating layer is less likely to diffuse hydrogen than the second insulating layer. The second insulating layer contains oxide, the first semiconductor layer contains polycrystalline silicon, and the second semiconductor layer contains a metal oxide. The first transistor is a p-channel transistor and the second transistor is an n-channel transistor.
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85.发明公开公开(公告)号：US20240237425A9
公开(公告)日：2024-07-11
申请号：US18548186
申请日：2022-02-24
发明人： Ryota HODO , Shinya SASAGAWA , Yoshikazu HIURA , Takahiro FUJIE
IPC分类号： H10K59/122 , H10K59/12 , H10K59/35
CPC分类号： H10K59/122 , H10K59/1201 , H10K59/353
摘要： A high-definition and high-resolution display apparatus is provided. A conductive film, a first layer, and a first sacrificial layer are formed. The first layer and the first sacrificial layer are processed to expose part of the conductive film. A second layer and a second sacrificial layer are formed over the first sacrificial layer and the conductive film. The second layer and the second sacrificial layer are processed to expose part of the conductive film. The conductive film is processed to form a first pixel electrode overlapping with the first sacrificial layer and a second pixel electrode overlapping with the second sacrificial layer. Two insulating films covering at least a side surface of the first pixel electrode, a side surface of the second pixel electrode, a side surface of the first layer, a side surface of the second layer, a side surface and a top surface of the first sacrificial layer, and a side surface and atop surface of the second sacrificial layer are formed. The two insulating films are processed to form a sidewall covering at least the side surface of the first pixel electrode and the side surface of the first layer. The first sacrificial layer and the second sacrificial layer are removed. A common electrode is formed over the first layer and the second layer.
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公开(公告)号：US20240237374A9
公开(公告)日：2024-07-11
申请号：US18278199
申请日：2022-02-24
发明人： Hiromichi GODO , Yoshiyuki KUROKAWA , Kouhei TOYOTAKA , Kazuki TSUDA , Satoru OHSHITA , Hidefumi RIKIMARU
IPC分类号： H10K39/34 , G06F3/01 , G09G3/3208 , H10K59/65
CPC分类号： H10K39/34 , G06F3/013 , G09G3/3208 , H10K59/65 , G09G2330/021 , G09G2354/00 , G09G2360/14
摘要： An electronic device having an eye tracking function is provided. The electronic device includes a display device and an optical system. The display device includes a first light-emitting element, a second light-emitting element, a sensor portion, and a driver circuit portion. The sensor portion includes a light-receiving element. The first light-emitting element has a function of emitting infrared light or visible light. The second light-emitting element has a function of emitting light of a color different from that of light emitted from the first light-emitting element. When the first light-emitting element emits infrared light, the light-receiving element has a function of detecting the infrared light that is emitted from the first light-emitting element and reflected by an eyeball of a user. When the first light-emitting element emits visible light, the light-receiving element has a function of detecting the visible light that is emitted from the first light-emitting element and reflected by the eyeball of the user. The first light-emitting element and the second light-emitting element are placed in one layer. The layer where the first light-emitting element and the second light-emitting element are positioned overlaps with the sensor portion.
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公开(公告)号：US20240234432A1
公开(公告)日：2024-07-11
申请号：US18616403
申请日：2024-03-26
IPC分类号： H01L27/12 , H01L21/02 , H01L29/24 , H01L29/66 , H01L29/786
CPC分类号： H01L27/1225 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1218 , H01L27/124 , H01L27/127 , H01L29/24 , H01L29/66969 , H01L29/78633 , H01L29/78645 , H01L29/78648 , H01L29/78654 , H01L29/7869 , H01L29/78696
摘要： An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.
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公开(公告)号：US20240231756A9
公开(公告)日：2024-07-11
申请号：US18278451
申请日：2022-02-24
IPC分类号： G06F7/523 , G06F7/50 , G09G3/3208 , G11C11/405 , H10B12/00 , H10K59/121
CPC分类号： G06F7/523 , G06F7/50 , G09G3/3208 , G11C11/405 , H10B12/00 , H10K59/1213 , H10K59/1216
摘要： A semiconductor device with a novel structure is provided. The semiconductor device includes a cell array performing a product-sum operation of a first layer and a product-sum operation of a second layer in an artificial neural network, a first circuit from which first data is input to the cell array, and a second circuit to which second data is output from the cell array. The cell array includes a plurality of cells. The cell array includes a first region and a second region. In a first period, the first region is supplied with the t-th (t is a natural number greater than or equal to 2) first data from the first circuit and outputs the t-th second data according to the product-sum operation of the first layer to the second circuit. In the first period, the second region is supplied with the (t+1)-th first data from the first circuit and outputs the (t+1)-th second data according to the product-sum operation of the second layer to the first circuit.
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公开(公告)号：US12034064B2
公开(公告)日：2024-07-09
申请号：US17111838
申请日：2020-12-04
IPC分类号： H01L29/66 , H01L21/46 , H01L27/12 , H01L29/786
CPC分类号： H01L29/66969 , H01L21/46 , H01L27/1225 , H01L29/7869
摘要： It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.
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公开(公告)号：US20240224698A1
公开(公告)日：2024-07-04
申请号：US18557142
申请日：2022-04-15
发明人： Daiki NAKAMURA , Kenichi OKAZAKI , Rai SATO
IPC分类号： H10K59/38
CPC分类号： H10K59/38
摘要： A high-resolution or high-definition display apparatus is provided. The display apparatus includes a first light-emitting element, a second light-emitting element, a first color filter, and a second color filter; the first light-emitting element and the second light-emitting element each have the capability to emit white light; the first color filter and the second color filter have the capability to transmit light of the respective colors in light emitted from the light-emitting elements; the first light-emitting element includes a first pixel electrode, a first EL layer over the first pixel electrode, and a common electrode over the first EL layer; the second light-emitting element includes a second pixel electrode over an insulating layer, a second EL layer over the second pixel electrode, and the common electrode over the second EL layer; the first light-emitting element includes a region where an angle between the side surface of the first pixel electrode and the bottom surface of the first pixel electrode is greater than or equal to 60° and less than or equal to 140°; and the ratio (T1/T2) of a thickness T1 of the first pixel electrode to a thickness T2 of the first EL layer is greater than or equal to 0.5.
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