公开(公告)号：US20180033553A1

公开(公告)日：2018-02-01

申请号：US15548992

申请日：2016-01-28

Applicant: CAVENDISH KINETICS, INC.

Inventor： Robertus Petrus VAN KAMPEN ,  Roberto GADDI ,  Richard L. KNIPE

IPC: H01G4/005 ,  H01H1/00

CPC classification number: H01G4/005 ,  B81B2201/016 ,  H01H1/0036 ,  H01H59/0009 ,  H01H2001/0057 ,  H01H2001/0084

Abstract: The present disclosure generally relates to a MEMS DVC utilizing one or more MIM capacitors located in the anchor of the DVC and an Ohmic contact located on the RF-electrode. The MIM capacitor in combination with the ohmic MEMS device ensures that a stable capacitance for the MEMS DVC is achieved with applied RF power.

公开(公告)号：US20170301493A1

公开(公告)日：2017-10-19

申请号：US15458444

申请日：2017-03-14

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Mark Bachman ,  Guann-Pyng Li ,  Yang Zhang ,  Minfeng Wang

IPC: H01H50/32 ,  H01H50/00 ,  H01H50/44 ,  H01H50/58

CPC classification number: H01H50/32 ,  B81B3/0054 ,  B81B2201/016 ,  H01H1/0036 ,  H01H50/005 ,  H01H50/44 ,  H01H50/58 ,  H01H2001/0042

Abstract: Micro-electromagnetically actuated latched miniature relay switches formed from laminate layers comprising a spring and magnet, electromagnetic coils, magnetic latching material, and transmission line with contacts. Preferably the miniature relay switches transmit up to about 50 W of DC or AC line power, and carry up to about 10 A of load current, with an overall volume of less than about 100 mm3. In addition to switching large power, the device preferably requires less than 3 V to actuate, and has a latching feature that retains the switch state after actuation without the need for external applied voltage or current.

公开(公告)号：US09593007B2

公开(公告)日：2017-03-14

申请号：US14519772

申请日：2014-10-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. Jahnes ,  Anthony K. Stamper

IPC: H04R31/00 ,  B81B3/00 ,  B81C1/00 ,  G06F17/50 ,  B81B7/00 ,  H01L41/113 ,  H01L41/09

CPC classification number: B81B3/001 ,  B81B3/0021 ,  B81B3/0059 ,  B81B3/0072 ,  B81B7/0006 ,  B81B7/008 ,  B81B2201/016 ,  B81B2203/0163 ,  B81C1/00015 ,  B81C1/0015 ,  B81C1/00476 ,  G06F17/5045 ,  H01L41/094 ,  H01L41/1134 ,  H01L41/1138 ,  Y10T29/49002 ,  Y10T29/49005 ,  Y10T29/4908 ,  Y10T29/49121

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. A wiring layer is formed on a substrate comprising actuator electrodes and a contact electrode. A MEMS beam is formed above the wiring layer and at least one spring is formed and attached to at least one end of the MEMS beam. At least one spring has a predetermined spring constant based on a coefficient of thermal expansion (CTE) mismatch between materials of the MEMS structure and the spring. Additionally, an array of mini-bumps is formed between the wiring layer and the MEMS beam. A size of a space between fixed actuator electrodes or dummy actuators is determined based on a lateral shift of the MEMS beam.

Abstract translation: 提供微机电系统（MEMS）结构，制造方法和设计结构。 在包括致动器电极和接触电极的基板上形成布线层。 在布线层上方形成有MEMS光束，并且形成至少一个弹簧并将其连接到MEMS光束的至少一端。 基于MEMS结构的材料与弹簧之间的热膨胀系数（CTE）失配，至少一个弹簧具有预定的弹簧常数。 此外，在布线层和MEMS光束之间形成微小凸起阵列。 基于MEMS梁的横向偏移来确定固定致动器电极或虚拟致动器之间的空间的大小。

公开(公告)号：US09488162B2

公开(公告)日：2016-11-08

申请号：US14022604

申请日：2013-09-10

Applicant: FUJITSU LIMITED

Inventor： Osamu Toyoda

IPC: H01L41/09 ,  F03G7/06 ,  H01G5/16 ,  B81B3/00 ,  C25D7/00 ,  H02N1/00 ,  H01L41/318 ,  H01H59/00 ,  H01H1/00

CPC classification number: F03G7/065 ,  B81B3/0072 ,  B81B3/0086 ,  B81B2201/016 ,  B81B2201/0221 ,  C25D7/00 ,  H01G5/16 ,  H01H59/0009 ,  H01H2001/0084 ,  H01L41/0926 ,  H01L41/0933 ,  H01L41/0973 ,  H01L41/318 ,  H02N1/006

Abstract: An electronic device includes a substrate, an electrode formed on the substrate, and a movable portion provided above the electrode, the movable portion being elastically deformable, in which the movable potion includes a shape memory alloy film.

Abstract translation: 电子设备包括基板，形成在基板上的电极和设置在电极上方的可移动部分，可移动部分可弹性变形，可移动部分包括形状记忆合金膜。

公开(公告)号：US09006797B2

公开(公告)日：2015-04-14

申请号：US14041983

申请日：2013-09-30

Applicant: International Business Machines Corporation

Inventor： Hanyi Ding ,  Qizhi Liu ,  Anthony K. Stamper

IPC: H01L29/84 ,  H01H1/00 ,  B81B7/00 ,  G06F17/50 ,  H01P1/12

CPC classification number: H01H1/0036 ,  B81B7/0006 ,  B81B2201/016 ,  G06F17/5063 ,  G06F17/5068 ,  H01P1/127

Abstract: A micro-electro-mechanical system (MEMS), methods of forming the MEMS and design structures are provided. The method includes forming a coplanar waveguide (CPW) comprising a signal electrode and a pair of electrodes on a substrate. The method includes forming a first sacrificial material over the CPW, and a wiring layer over the first sacrificial material and above the CPW. The method includes forming a second sacrificial material layer over the wiring layer, and forming insulator material about the first sacrificial material and the second sacrificial material. The method includes forming at least one vent hole in the insulator material to expose portions of the second sacrificial material, and removing the first and second sacrificial material through the vent hole to form a cavity structure about the wiring layer and which exposes the signal line and pair of electrodes below the wiring layer. The vent hole is sealed with sealing material.

Abstract translation: 提供了微机电系统（MEMS），形成MEMS和设计结构的方法。 该方法包括在衬底上形成包括信号电极和一对电极的共面波导（CPW）。 该方法包括在CPW上形成第一牺牲材料，以及在第一牺牲材料上方和CPW上方的布线层。 该方法包括在布线层上形成第二牺牲材料层，以及围绕第一牺牲材料和第二牺牲材料形成绝缘体材料。 所述方法包括在所述绝缘体材料中形成至少一个通气孔以暴露所述第二牺牲材料的部分，以及通过所述通气孔去除所述第一和第二牺牲材料以形成围绕所述布线层的空腔结构，并且暴露所述信号线和 一对电极在布线层下方。 通气孔用密封材料密封。

公开(公告)号：US08859318B2

公开(公告)日：2014-10-14

申请号：US13696569

申请日：2010-05-07

Applicant: Afshin Ziaei ,  Matthieu Le Baillif

Inventor： Afshin Ziaei ,  Matthieu Le Baillif

IPC: H01L21/00 ,  H01L27/14 ,  B81C1/00 ,  H01H59/00

CPC classification number: B81C1/00246 ,  B81B2201/016 ,  B81C2203/0735 ,  H01H59/0009

Abstract: Methods of fabrication of electronic modules comprise, on the one hand, power electronic components fabricated on a substrate made of gallium nitride (GaN) and, on the other hand, micro-switches using electrostatic activation of the MEMS (Micro Electro Mechanical System) type. The electronic components and the micro-switches are fabricated on a single gallium nitride substrate and the fabrication method comprises at least the following steps: fabrication of the power components on the gallium nitride substrate; deposition of a first common passivation layer on said components and on the substrate; fabrication of the micro-switches on said substrate.

Abstract translation: 电子模块的制造方法一方面包括制造在由氮化镓（GaN）制成的衬底上的功率电子部件，另一方面，使用使用MEMS（微机电系统）型的静电激活的微型开关 。 电子部件和微型开关被制造在单个氮化镓衬底上，并且制造方法至少包括以下步骤：制造氮化镓衬底上的功率部件; 在所述组件和衬底上沉积第一公共钝化层; 所述基板上的微型开关的制造。

公开(公告)号：US08592876B2

公开(公告)日：2013-11-26

申请号：US13342689

申请日：2012-01-03

Applicant: Hanyi Ding ,  Qizhi Liu ,  Anthony K. Stamper

Inventor： Hanyi Ding ,  Qizhi Liu ,  Anthony K. Stamper

IPC: H01L29/80

CPC classification number: H01H1/0036 ,  B81B7/0006 ,  B81B2201/016 ,  G06F17/5063 ,  G06F17/5068 ,  H01P1/127

Abstract: A micro-electro-mechanical system (MEMS), methods of forming the MEMS and design structures are provided. The method comprises forming a coplanar waveguide (CPW) comprising a signal electrode and a pair of electrodes on a substrate. The method comprises forming a first sacrificial material over the CPW, and a wiring layer over the first sacrificial material and above the CPW. The method comprises forming a second sacrificial material layer over the wiring layer, and forming insulator material about the first sacrificial material and the second sacrificial material. The method comprises forming at least one vent hole in the insulator material to expose portions of the second sacrificial material, and removing the first and second sacrificial material through the vent hole to form a cavity structure about the wiring layer and which exposes the signal line and pair of electrodes below the wiring layer. The vent hole is sealed with sealing material.

Abstract translation: 提供了微机电系统（MEMS），形成MEMS和设计结构的方法。 该方法包括在衬底上形成包括信号电极和一对电极的共面波导（CPW）。 该方法包括在CPW上形成第一牺牲材料，以及在第一牺牲材料上方和CPW上方的布线层。 该方法包括在布线层上形成第二牺牲材料层，以及围绕第一牺牲材料和第二牺牲材料形成绝缘体材料。 该方法包括在绝缘体材料中形成至少一个通气孔以暴露第二牺牲材料的部分，以及通过通气孔去除第一和第二牺牲材料，以形成围绕布线层的空腔结构，并使信号线和 一对电极在布线层下方。 通气孔用密封材料密封。

公开(公告)号：US20130271805A1

公开(公告)日：2013-10-17

申请号：US13864430

申请日：2013-04-17

Applicant: Nikon Corporation

Inventor： Hiroshi KONISHI ,  Junji SUZUKI

IPC: G02B26/08

CPC classification number: G02B26/08 ,  B81B3/0086 ,  B81B2201/016 ,  H01G5/16 ,  H01G5/18 ,  H01L23/5223 ,  H01L27/0808 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: An electronic element includes a fixed portion, and a movable portion which is movable with respect to the fixed portion and which is provided to generate a spring force to make restoration to a predetermined position. The fixed portion is provided with a first driving electrode and a first signal electrode. The movable portion is provided with a second driving electrode and a second signal electrode. An electrostatic force is generated between the first driving electrode and the second driving electrode by a voltage applied therebetween so that the electrostatic force resists against the spring force; and the first and second driving electrodes and the first and second signal electrodes are arranged so that the electrostatic force is generated in a direction in which a spacing distance between the first and second signal electrodes is widened.

Abstract translation: 电子元件包括固定部分和可相对于固定部分移动并且被设置成产生弹簧力以使其恢复到预定位置的可动部分。 固定部设置有第一驱动电极和第一信号电极。 可动部设置有第二驱动电极和第二信号电极。 通过施加在第一驱动电极和第二驱动电极之间的电压产生静电力，使得静电力抵抗弹簧力; 并且第一和第二驱动电极以及第一和第二信号电极被布置成使得在第一和第二信号电极之间的间隔距离变宽的方向产生静电力。

公开(公告)号：US08553455B2

公开(公告)日：2013-10-08

申请号：US11528712

申请日：2006-09-27

Applicant: Sandip Tiwari ,  Chung Woo Kim

Inventor： Sandip Tiwari ,  Chung Woo Kim

IPC: G11C11/34

CPC classification number: H01L27/115 ,  B81B3/0072 ,  B81B2201/016 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/14 ,  G11C2213/17 ,  G11C2213/77 ,  H01H9/547 ,  H01H59/0009 ,  H01H61/0107 ,  H01L21/28273 ,  H01L27/112 ,  H01L29/66825 ,  H01L29/785

Abstract: Mechanical devices having bistable positions are utilized to form switches and memory devices. The devices are actuatable to different positions and may be coupled to a transistor device in various configurations to provide memory devices. Actuation mechanisms include electrostatic methods and heat. In one form, the mechanical device forms a gate for a field effect transistor. In a further form, the device may be a switch that may be coupled to the transistor in various manners to affect its electrical characteristics when on and off. The memory switch in one embodiment comprises side walls formed with tensile or compressive films. A cross point switch is formed from a plurality of intersecting conductive rows and columns of conductors. Actuatable switches are positioned between each intersection of the rows and columns such that each intersection is independently addressable.

Abstract translation: 利用具有双稳态位置的机械装置来形成开关和存储装置。 这些器件可被驱动到不同的位置，并且可以以各种配置耦合到晶体管器件以提供存储器件。 致动机制包括静电法和热量。 在一种形式中，机械装置形成用于场效应晶体管的栅极。 在另一种形式中，器件可以是开关，其可以以各种方式耦合到晶体管，以便在接通和断开时影响其电特性。 在一个实施例中的存储器开关包括由拉伸或压缩膜形成的侧壁。 交叉点开关由多个交叉的导电行和导体列形成。 可执行开关位于行和列的每个交叉点之间，使得每个交叉点可独立寻址。

公开(公告)号：US08546712B2

公开(公告)日：2013-10-01

申请号：US13203624

申请日：2010-03-04

Applicant: Martijn Goossens ,  Hilco Suy ,  Peter Gerard Steeneken ,  Jozef Thomas Martinus van Beek

Inventor： Martijn Goossens ,  Hilco Suy ,  Peter Gerard Steeneken ,  Jozef Thomas Martinus van Beek

IPC: H01H57/00

CPC classification number: B81B3/0078 ,  B81B2201/014 ,  B81B2201/016 ,  H01G5/011 ,  H01G5/16

Abstract: A MEMS device comprises first and second opposing electrode arrangements (22,28), wherein the second electrode arrangement (28) is electrically movable to vary the electrode spacing between facing sides of the first and second electrode arrangements. At least one of the facing sides has a non-flat surface with at least one peak and at least one trough. The height of the peak and depth of the trough is between 0.01t and 0.1t where t is the thickness of the movable electrode.

Abstract translation: MEMS器件包括第一和第二相对电极布置（22,28），其中第二电极布置（28）可电可移动以改变第一和第二电极布置的相对侧之间的电极间距。 至少一个相对侧具有具有至少一个峰和至少一个槽的非平坦表面。 槽的高度和深度在0.01t到0.1t之间，其中t是可动电极的厚度。