公开(公告)号：US20130087764A1

公开(公告)日：2013-04-11

申请号：US13674568

申请日：2012-11-12

Applicant: Samsung Electro-mechanics Co., Ltd.

Inventor： Joon-seop KWAK ,  Kyo-yeol LEE ,  Jae-hee CHO ,  Su-hee CHAE

IPC: H01L33/04

CPC classification number: H01L33/04 ,  B82Y20/00 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/382 ,  H01L33/46 ,  H01L33/641 ,  H01L2933/0016 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/0217 ,  H01S5/024 ,  H01S5/02461 ,  H01S5/02476 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/34333 ,  Y10S438/928

Abstract: A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer.

Abstract translation: 提供一种GaN基III-V族氮化物半导体发光器件及其制造方法。 在GaN基III-V族氮化物半导体发光器件中，包括面向相反方向或相同方向的第一和第二电极，其间具有耐高压衬底和用于发光或发光的材料层，第二电极直接接触 最外层的材料层通过高阻基板的蚀刻区域露出。 可以在高阻基板的底部上形成导热层以覆盖最外层材料层的暴露区域。

公开(公告)号：US08326098B2

公开(公告)日：2012-12-04

申请号：US12400154

申请日：2009-03-09

Applicant: Fabien Mandorlo ,  Jean-Marc Fedeli ,  Pedro Rojo-Romeo

Inventor： Fabien Mandorlo ,  Jean-Marc Fedeli ,  Pedro Rojo-Romeo

IPC: G02B6/26 ,  H01S3/06 ,  H01S3/083

CPC classification number: H01S5/1075 ,  H01S5/021 ,  H01S5/0218 ,  H01S5/0422 ,  H01S5/0424 ,  H01S5/0425

Abstract: The invention concerns a gallery mode microdisc system for an electrically pumped optical source, the microdisc (1) being formed on one face of a substrate (2), the lower part of the microdisc being provided with an electrical contact referred to as the lower contact (4), the upper part of the microdisc being provided with an electrical contact referred to as the upper contact (6), the upper part of the microdisc being covered with a protective layer (3) of electrically insulating material, the central part (5) of the microdisc being electrically neutralized in order to prevent the passage of an electric current in said central part.

Abstract translation: 本发明涉及一种用于电泵浦光源的照相模式微盘系统，该微盘（1）形成在一基板（2）的一个面上，该微盘的下部设有一电触头， （4）中，微盘的上部设有被称为上触点（6）的电触点，微型盘的上部被电绝缘材料的保护层（3）覆盖，中心部分 5）的微电极被电中和，以防止电流通过所述中心部分。

公开(公告)号：US08183649B2

公开(公告)日：2012-05-22

申请号：US12723544

申请日：2010-03-12

Applicant: Christopher L. Chua ,  Zhihong Yang

Inventor： Christopher L. Chua ,  Zhihong Yang

IPC: H01L27/14 ,  H01L29/82 ,  H01L29/84

CPC classification number: H01S5/18308 ,  H01L33/007 ,  H01L33/145 ,  H01S5/0213 ,  H01S5/0424 ,  H01S5/32341 ,  H01S5/423 ,  H01S2304/04

Abstract: A buried aperture in a nitride light emitting device is described. The aperture is formed in an aperture layer, typically an amorphous or polycrystalline material over an active layer that includes a nitride material. The aperture layer material typically also includes nitride. The aperture layer is etched to create an aperture which is filled with a conducting material by epitaxial regrowth. The amorphous layer is crystallized forming an electrically resistive material during or before regrowth. The conducting aperture in the electrically resistive material is well suited for directing current into a light emitting region of the active layer.

Abstract translation: 描述了氮化物发光器件中的埋入孔。 孔径形成在包括氮化物材料的有源层上的孔层中，通常为非晶或多晶材料。 孔层材料通常还包括氮化物。 蚀刻孔径层以产生通过外延再生长填充导电材料的孔。 在再生长期间或之前，非晶层结晶形成电阻材料。 电阻材料中的导电孔径非常适合于将电流引导到有源层的发光区域中。

公开(公告)号：US20110227116A1

公开(公告)日：2011-09-22

申请号：US13129115

申请日：2009-10-21

Applicant: Shinichi Saito ,  Masahiro Aoki ,  Nobuyuki Sugii ,  Katsuya Oda ,  Toshiki Sugawa

Inventor： Shinichi Saito ,  Masahiro Aoki ,  Nobuyuki Sugii ,  Katsuya Oda ,  Toshiki Sugawa

IPC: H01L33/34 ,  H01L33/60 ,  H01L31/028 ,  H01L31/18

CPC classification number: H01S5/3201 ,  H01L31/103 ,  H01L31/1808 ,  H01S5/0208 ,  H01S5/021 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/0424 ,  H01S5/1032 ,  H01S5/1231 ,  H01S5/125 ,  H01S5/3223 ,  Y02E10/50

Abstract: An object of the present invention is to provide a germanium laser diode that can be easily formed on a substrate such as silicon by using a normal silicon process and can emit light efficiently. A germanium light-emitting device according to the present invention is a germanium laser diode characterized in that tensile strain is applied to single-crystal germanium serving as a light-emitting layer to be of a direct transition type, a thin semiconductor layer made of silicon, germanium or silicon-germanium is connected adjacently to both ends of the germanium light-emitting layer, the thin semiconductor layer has a certain degree of thickness capable of preventing the occurrence of quantum confinement effect, another end of the thin semiconductor layer is connected to a thick electrode doped with impurities at a high concentration, the electrode is doped to a p type and an n type, a waveguide is formed so as not to be in direct contact with the electrode, and a mirror is formed at an end of the waveguide.

Abstract translation: 本发明的目的是提供一种可以通过使用普通硅工艺容易地在诸如硅的衬底上形成的锗激光二极管，并且能够有效发光。 根据本发明的锗发光器件是锗激光二极管，其特征在于将拉伸应变施加到作为直接转变型的发光层的单晶锗，由硅制成的薄半导体层 ，锗或锗锗与锗发光层的两端相邻连接，薄型半导体层具有能够防止量子限制效应发生的一定程度的厚度，薄半导体层的另一端与 以高浓度掺杂有杂质的厚电极，电极被掺杂成ap型和n型，形成波导以不与电极直接接触，并且在波导的端部形成反射镜 。

公开(公告)号：US07764852B2

公开(公告)日：2010-07-27

申请号：US11888015

申请日：2007-07-30

Applicant: Michael Renne Ty Tan ,  Shih-Yuan Wang ,  Duncan Stewart ,  David A. Fattal

Inventor： Michael Renne Ty Tan ,  Shih-Yuan Wang ,  Duncan Stewart ,  David A. Fattal

IPC: G02B6/26

CPC classification number: H01S5/1075 ,  B82Y20/00 ,  G02B6/12007 ,  H01S5/026 ,  H01S5/0424 ,  H01S5/1032 ,  H01S5/1042 ,  H01S5/34306

Abstract: Various embodiments of the present invention are related to microresonator systems and to methods of fabricating the microresonator systems. In one embodiment, a microresonator system comprises a substrate having a top surface layer and at least one waveguide embedded in the substrate and positioned adjacent to the top surface layer of the substrate. The microresonator system also includes a microresonator having a top layer, an intermediate layer, a bottom layer, a peripheral region, and a peripheral coating. The bottom layer of the microresonator is attached to and in electrical communication with the top surface layer of the substrate. The microresonator is positioned so that at least a portion of the peripheral region is located above the at least one waveguide. The peripheral coating covers at least a portion of the peripheral surface and has a relatively lower index of refraction than the top, intermediate, and bottom layers of the microresonator.

Abstract translation: 本发明的各种实施例涉及微谐振器系统和制造微谐振器系统的方法。 在一个实施例中，微谐振器系统包括具有顶表面层和嵌入在衬底中的至少一个波导并且邻近衬底的顶表面层定位的衬底的衬底。 微谐振器系统还包括具有顶层，中间层，底层，周边区域和外围涂层的微谐振器。 微谐振器的底层附着到衬底的顶表面层并与其电连通。 定位微谐振器使得周边区域的至少一部分位于至少一个波导的上方。 周边涂层覆盖周边表面的至少一部分，并且具有比微谐振器的顶层，中间层和底层更低的折射率。

公开(公告)号：US07603016B1

公开(公告)日：2009-10-13

申请号：US11801766

申请日：2007-04-30

Applicant: Richard A. Soref

Inventor： Richard A. Soref

IPC: G02B6/10

CPC classification number: G02B6/1225 ,  B82Y20/00 ,  G02F1/025 ,  G02F2001/0157 ,  G02F2201/063 ,  G02F2201/58 ,  G02F2202/32 ,  H01L31/165 ,  H01L31/173 ,  H01S5/0265 ,  H01S5/0424 ,  H01S5/3223

Abstract: A CMOS compatible ten-gigabit-per-second region nano-waveguide included photonic communication link apparatus of low energy use per transmitted bit. An embodiment of the link includes an electrically pumped laser, an electro absorption modulator and a photodetector for the 1.5 to 2.0 micrometer infrared spectral region; omission of the separate electro absorption modulator is additionally disclosed. Each of these three nano-scale elements preferably includes active semiconductor crystal material situated in a preferably Silicon resonator within a nano-strip waveguide. The resonator is defined by dispersed resonator mirrors having tapered separation distance one dimensional photonic crystal lattice apertures of oxide holes or slots. Each of the three devices may be a semiconductor heterodiode pumped or controlled by laterally disposed wings enclosing the resonator to form a lateral PIN heterodiode for current injection or high E-field generation depending on bias and composition conditions selected.

Abstract translation: CMOS兼容的十吉比特每秒区域纳米波导包括每个传输位的低能量使用的光子通信链路装置。 链路的实施例包括电泵浦激光器，电吸收调制器和用于1.5至2.0微米红外光谱区域的光电检测器; 另外公开了省略分离的电吸收调制器。 这三个纳米级元件中的每一个优选地包括位于纳米条波导内的优选硅谐振器中的有源半导体晶体材料。 谐振器由具有锥形分离距离的分散的谐振器反射镜定义为氧化物孔或狭缝的一维光子晶格点阵孔。 三个装置中的每一个可以是由侧向设置的翼状物泵送或控制的半导体异质二极管，所述翅片围绕谐振器以形成用于电流注入的侧向PIN异二极管或者根据所选择的偏置和组成条件的高电场产生。

公开(公告)号：US07502401B2

公开(公告)日：2009-03-10

申请号：US11187477

申请日：2005-07-22

Applicant: Jeffrey N. Miller ,  Scott W. Corzine ,  David P. Bour

Inventor： Jeffrey N. Miller ,  Scott W. Corzine ,  David P. Bour

IPC: H01S5/00

CPC classification number: B82Y20/00 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/18383 ,  H01S5/2203 ,  H01S5/341 ,  H01S5/3428 ,  H01S5/34333 ,  H01S2304/12

Abstract: The present invention provides a VCSEL system comprising forming a first mirror, forming a vertical cavity on the first mirror, the vertical cavity including integrated multiple gain regions and forming a transverse p/n junction laterally to the integrated multiple gain regions, wherein forward biasing the transverse p/n junction causes photon emission in the integrated multiple gain regions.

Abstract translation: 本发明提供了一种VCSEL系统，包括形成第一反射镜，在第一反射镜上形成垂直空腔，垂直空腔包括集成的多增益区域，并横向形成横向p / n接合到集成的多增益区域，其中向前偏置 横向p / n结在整合的多增益区域中引起光子发射。

公开(公告)号：US20080087876A1

公开(公告)日：2008-04-17

申请号：US11632934

申请日：2005-08-02

Applicant: Geoffrey Nash ,  John Henry Jefferson ,  keith Nash

Inventor： Geoffrey Nash ,  John Henry Jefferson ,  keith Nash

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L33/02 ,  H01L33/20 ,  H01S5/0424

Abstract: A lateral junction semiconductor device and method for fabricating the same comprising the steps of taking a semiconductor structure having a stack formed by a plurality of layers of semiconductor material arranged in a series of substantially parallel planes, the semiconductor material within a first layer having an excess of charge carriers of a first polarity at a first concentration, and selectively removing semiconductor material from the first layer to a depth which varies along a first direction substantially parallel with the planes of the layers within the structure, so as to provide a gradation of the concentration of charge carriers of first polarity within an active layer along the first direction. A photon source comprising said lateral junction semiconductor device.

Abstract translation: 一种横向结半导体器件及其制造方法，包括以下步骤：获取半导体结构，所述半导体结构具有由布置在一系列基本上平行的平面中的多层半导体材料形成的叠层，所述半导体材料在第一层内具有过量的 的具有第一浓度的第一极性的电荷载体，并且将半导体材料从第一层选择性地移除到沿着基本上平行于结构内的层的平面的第一方向变化的深度，以便提供 沿着第一方向在有源层内的第一极性的电荷载流子的浓度。 一种包括所述横向结半导体器件的光子源。

公开(公告)号：US20080029757A1

公开(公告)日：2008-02-07

申请号：US11599197

申请日：2006-11-14

Applicant: Lawrence West ,  Francisco Leon

Inventor： Lawrence West ,  Francisco Leon

IPC: H01L29/06

CPC classification number: H01S5/0424 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/0218 ,  H01S5/22 ,  H01S5/305 ,  H01S5/343

Abstract: A semiconductor device including: a quantum well having photon emission energy level, the quantum well having at least one active layer and two barrier layers, one disposed above the active layer and one disposed below the active layer; and injection regions for injecting electrons into the quantum well, wherein the electrons are cool electrons with respect to the active layer of the quantum well.

Abstract translation: 一种半导体器件，包括：具有光子发射能级的量子阱，所述量子阱具有至少一个有源层和两个势垒层，一个设置在有源层上方，一个设置在有源层下面; 以及用于将电子注入量子阱的注入区域，其中电子相对于量子阱的有源层为冷电子。

公开(公告)号：US07271418B2

公开(公告)日：2007-09-18

申请号：US10948215

申请日：2004-09-24

Applicant: Jin-Wei Shi ,  Jinn-Kong Sheu

Inventor： Jin-Wei Shi ,  Jinn-Kong Sheu

IPC: H01L27/15 ,  H01L31/12 ,  H01L31/153 ,  H01L33/00

CPC classification number: H01S5/227 ,  B82Y20/00 ,  H01L33/08 ,  H01L33/32 ,  H01S5/0424 ,  H01S5/2206 ,  H01S5/3095 ,  H01S5/34333

Abstract: The present invention is a semiconductor apparatus for white light generation and amplification, where, under different current bias, white light can be generated steadily and evenly by folding up multi-wavelength quantum wells and by side-injecting a current. And, the white light can be excited out electronically without mingling with a fluorescent powder so that the cost for sealing is reduced. Because the light is directly excited out by electricity to prevent from energy loss during fluorescence transformation, the light generation efficiency of the present invention is far greater than that of the traditional phosphorus mingled with light-emitting diode of white light. Besides, concerning the characteristics of the white light, the spectrum of the white light can be achieved by adjusting the structure and/or the number of the quantum wells while preventing from being limited by the atomic emission lines of the fluorescent powder.

Abstract translation: 本发明是一种用于白光发生和放大的半导体装置，其中在不同的电流偏压下，通过折叠多波长量子阱并通过侧注射电流可以稳定和均匀地产生白光。 而且，白光可以以电子方式激发而不与荧光粉混合，从而降低了密封成本。 由于光被电力直接激发以防止在荧光变换期间的能量损失，所以本发明的发光效率远远大于与白光发光二极管混合的传统磷的发光效率。 此外，关于白光的特性，白光的光谱可以通过调整量子阱的结构和/或数量同时防止受到荧光粉的原子发射线的限制而实现。