Dual-layer metal for flat panel display
    81.
    发明授权
    Dual-layer metal for flat panel display 有权
    双层金属用于平板显示

    公开(公告)号:US06225732B1

    公开(公告)日:2001-05-01

    申请号:US09437346

    申请日:1999-11-09

    Abstract: A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a cathodic structure which is formed within an active area on a backplate. The cathodic structure includes a row metal composed of strips of aluminum overlain by a layer of cladding material. The use of aluminum and cladding material to form row metal gives row metal segments which are highly conductive due to the high conductivity of aluminum. By using a suitable cladding material and processing steps, a bond between the aluminum and the cladding material is formed which has good electrical conductivity. In one embodiment, tantalum is used as a cladding material. Tantalum forms a bond with the overlying resistive layer which has good electrical conductivity. Thus, the resulting structure has very high electrical conductivity through the aluminum layer and high conductivity into the resistive layer.

    Abstract translation: 平板显示器和平板显示器的形成方法。 在一个实施例中,平板显示器包括形成在背板上的有效区域内的阴极结构。 阴极结构包括由覆盖材料层覆盖的铝条构成的行金属。 使用铝和包层材料形成行金属,由于铝的高导电性而导致高导电性的行金属片段。 通过使用合适的覆层材料和加工步骤,形成铝和包层材料之间的结合,其具有良好的导电性。 在一个实施例中,钽用作包层材料。 钽与具有良好导电性的上覆电阻层形成键。 因此,所得结构通过铝层具有非常高的导电性,并且在电阻层中具有高导电性。

    Field emission device with buffer layer and method of making
    82.
    发明授权
    Field emission device with buffer layer and method of making 失效
    具有缓冲层的场致发射器件及其制造方法

    公开(公告)号:US06211608B1

    公开(公告)日:2001-04-03

    申请号:US09096085

    申请日:1998-06-11

    CPC classification number: H01J1/3044 H01J31/127 H01J2201/30403

    Abstract: A field emission device is disclosed having a buffer layer positioned between an underlying cathode conductive layer and an overlying resistor layer. The buffer layer consists of substantially undoped amorphous silicon. Any pinhole defects or discontinuities that extend through the resistor layer terminate at the buffer layer, thereby preventing the problems otherwise caused by pinhole defects. In particular, the buffer layer prevents breakdown of the resistor layer, thereby reducing the possibility of short circuiting. The buffer layer further reduces the risk of delamination of various layers or other irregularities arising from subsequent processing steps. Also disclosed are methods of making and using the field emission device having the buffer layer.

    Abstract translation: 公开了一种场致发射器件,其具有位于下面的阴极导电层和上覆电阻层之间的缓冲层。 缓冲层由基本上未掺杂的非晶硅组成。 延伸通过电阻层的任何针孔缺陷或不连续性终止于缓冲层,从而防止由针孔缺陷引起的问题。 特别地,缓冲层防止了电阻层的破坏,从而降低了短路的可能性。 缓冲层进一步降低了由后续处理步骤引起的各种层的分层或其它不规则的风险。 还公开了制造和使用具有缓冲层的场致发射器件的方法。

    Lamp bulb with integral reflector
    83.
    发明授权
    Lamp bulb with integral reflector 失效
    灯泡与整体反射器

    公开(公告)号:US06181054B2

    公开(公告)日:2001-01-30

    申请号:US09380832

    申请日:1999-09-10

    Abstract: An improved electrodeless discharge lamp bulb includes an integral ceramic reflector as a portion of the bulb envelope. The bulb envelope further includes two pieces, a reflector portion or segment is cast quartz ceramic and a light transmissive portion is a clear fused silica. In one embodiment, the cast quartz ceramic segment includes heat sink fins or stubs providing an increased outside surface area to dissipate internal heat. In another embodiment, the quartz ceramic segment includes an outside surface fused to eliminate gas permeation by polishing.

    Abstract translation: 改进的无电极放电灯泡包括作为灯泡外壳的一部分的整体陶瓷反射器。 灯泡外壳还包括两个部件,反射器部分或部分是铸造石英陶瓷,透光部分是透明的熔融二氧化硅。 在一个实施例中,铸造石英陶瓷部分包括提供增加的外表面积以消散内部热量的散热片或短棒。 在另一个实施例中,石英陶瓷段包括熔融的外表面以通过抛光消除气体渗透。

    Buffered resist profile etch of a field emission device structure
    84.
    发明授权
    Buffered resist profile etch of a field emission device structure 失效
    场发射器件结构

    公开(公告)号:US06175184B1

    公开(公告)日:2001-01-16

    申请号:US09022763

    申请日:1998-02-12

    CPC classification number: H01J9/025 H01J1/3044

    Abstract: A method for forming an emitter tip for use in a field emission device. An emitter layer is provided over a substrate. The emitter layer is overlaid with a blanket dielectric which is in turn overlaid by a masking layer. In a first etching operation, a masking island and an underlying dielectric island are formed from the masking layer and the blanket dielectric, respectively. These islands serve as a masking structure during subsequent etching processes by which an emitter tip is formed from the emitter layer. Accordingly, a second etching operation is conducted, whereby an etch chemistry which exhibits both isotropic and anisotropic characteristics is used to remove a portion of the emitter layer by undercutting beneath the masking structure. A third etching operation is conducted, wherein the etch chemistry is substantially more anisotropic than the etch chemistry of the second etching operation. The second and third etches mobilize a portion of the masking layer and form an emitter tip from the emitter layer. The emitter tip has a substantially rectilinear vertical profile.

    Abstract translation: 一种用于形成用于场发射装置的发射极尖端的方法。 发射极层设置在衬底上。 发射极层覆盖有覆盖电介质,覆盖电介质又由掩模层覆盖。 在第一蚀刻操作中,分别从掩模层和覆盖电介质形成掩蔽岛和下面的电介质岛。 这些岛在随后的蚀刻工艺期间用作掩模结构,通过该掩模结构,发射极尖端由发射极层形成。 因此,进行第二蚀刻操作,由此使用表现出各向同性和各向异性特征的蚀刻化学品,以通过掩模结构下方的切割来去除发射极层的一部分。 进行第三蚀刻操作,其中蚀刻化学性质比第二蚀刻操作的蚀刻化学性质更为各向异性。 第二和第三蚀刻动员掩模层的一部分并从发射极层形成发射极尖端。 发射极尖端具有大致直线的垂直轮廓。

    Field emission device and method for fabricating the same
    87.
    发明授权
    Field emission device and method for fabricating the same 失效
    场发射装置及其制造方法

    公开(公告)号:US06809464B2

    公开(公告)日:2004-10-26

    申请号:US09754273

    申请日:2001-01-05

    Abstract: A field emission device (FED) and a method for fabricating the FED are provided. The FED includes micro-tips with nano-sized surface features. Due to the micro-tips as a collection of a large number of nano-tips, the FED is operable at low gate turn-on voltages with high emission current densities, thereby lowering power consumption.

    Abstract translation: 提供场发射装置(FED)和制造FED的方法。 FED包括具有纳米尺寸表面特征的微型尖端。 由于微尖作为大量纳米尖端的集合,所以FED可在具有高发射电流密度的低栅极导通电压下工作,从而降低功耗。

    Field emission cathode
    88.
    再颁专利
    Field emission cathode 有权
    场发射阴极

    公开(公告)号:USRE38561E1

    公开(公告)日:2004-08-03

    申请号:US10408871

    申请日:2003-04-08

    CPC classification number: B82Y10/00 H01J1/3042 H01J2201/30469

    Abstract: A field emission cathode device consisting of an electrically conducting material and with a narrow, rod-shaped geometry or a knife edge, to achieve a high amplification of the electric field strength is characterized in that the electron-emitting part of the field emission cathode at least partly has preferred cylindrical host molecules and/or compounds with host compounds and/or cylindrical atomic networks, possibly with end caps with diameters measuring in the nanometer range.

    Infrared lamp and procedure for heating material to be processed
    89.
    发明授权
    Infrared lamp and procedure for heating material to be processed 失效
    红外灯和加热材料加工程序

    公开(公告)号:US06765339B2

    公开(公告)日:2004-07-20

    申请号:US10301612

    申请日:2002-11-22

    CPC classification number: H01K1/14 H01K1/06 H05B3/0057 H05B3/009 H05B2203/032

    Abstract: An infrared lamp with a closed-off enveloping tube which encloses an emission source joined with contacts for a power supply in the form of a carbon ribbon which, extending in a direction of a long axis of the enveloping tube, determines an irradiation length of the infrared lamp in the sense of a higher irradiation output. The carbon ribbon has a length which is larger than the irradiation length by a factor of at least 1.5. With a procedure for heating a material to be processed using the infrared lamp, which makes possible short processing times in connection with a simultaneous high degree of energy efficiency, the infrared lamp may be operated such that its maximum emission lies within a wavelength range from 1.8 &mgr;m to 2.9 &mgr;m, and such that its power output comes to at least 15 Watts per cm3 of the volume enclosed by the enveloping tube over the irradiation length.

    Abstract translation: 具有闭合包络管的红外灯,其封闭与碳带的形式的电源的接触部连接的发射源,该碳带沿着包络管的长轴方向延伸,确定辐射源的照射长度 红外灯的意义在于较高的辐射输出。 碳带的长度大于照射长度至少1.5倍。 通过使用红外线加热待处理材料的方法,这使得可以在同时具有高能量效率的情况下缩短处理时间,红外灯可以被操作,使得其最大发射在1.8的波长范围内 妈妈到2.9um,并且使得其功率输出在包络管围绕照射长度的每cm 3 cm 3的体积中至少为15瓦。

    Lamp unit for a projector and a process for the light control thereof
    90.
    发明授权
    Lamp unit for a projector and a process for the light control thereof 有权
    用于投影仪的灯单元以及用于其控制的过程

    公开(公告)号:US06759793B2

    公开(公告)日:2004-07-06

    申请号:US09915537

    申请日:2001-07-27

    Applicant: Mituo Narita

    Inventor: Mituo Narita

    Abstract: A lamp unit with a light control function for the light emitted from this lamp unit, for which a high pressure mercury lamp is used which is filled with at least 0.15 mg/mm3 mercury and which has a hermetically enclosing arrangement, an essentially hermetically enclosing arrangement or an arrangement in which there is a flow path for actively flowing cooling air within. The lamp unit for a projector has a high pressure mercury lamp of the short arc type with a wall load of at least 1 W/mm2 which is filled with at least 0.15 mg/mm3 mercury, a concave reflector which surrounds this mercury lamp, a front cover which covers the front opening of this concave reflector, a cooling arrangement which can be controlled with respect to its cooling intensity for cooling of the concave reflector and/or the mercury lamp and a control device by which the power of the mercury lamp can be changed, the cooling and the control device being made such that, by controlling the two, a value in the range of 1

    Abstract translation: 一种用于从该灯单元发射的光的光控制功能的灯单元,其使用高压汞灯,其被填充至少0.15mg / mm 3汞并且具有气密包围的布置,基本上 气密封闭装置或其中存在用于主动流过冷却空气的流路的布置。 用于投影仪的灯单元具有短弧型的高压汞灯,其壁填充量至少为1W / mm 2,其填充有至少0.15mg / mm 3汞柱,凹反射器 围绕该水银灯,覆盖该凹面反射器的前开口的前盖,可以相对于冷却强度来控制的冷却装置,用于冷却凹面反射器和/或水银灯,以及控制装置, 可以改变水银灯的功率,使冷却和控制装置通过控制2来设定在1 <(WxG / V)的范围内的值,其中V(cm 3) )是凹面反射器的内部体积,W(W)是水银灯的额定功率,G(W / mm <2))是壁载荷。 此外,给出了这种灯单元的光控制处理。

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