Abstract:
A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a cathodic structure which is formed within an active area on a backplate. The cathodic structure includes a row metal composed of strips of aluminum overlain by a layer of cladding material. The use of aluminum and cladding material to form row metal gives row metal segments which are highly conductive due to the high conductivity of aluminum. By using a suitable cladding material and processing steps, a bond between the aluminum and the cladding material is formed which has good electrical conductivity. In one embodiment, tantalum is used as a cladding material. Tantalum forms a bond with the overlying resistive layer which has good electrical conductivity. Thus, the resulting structure has very high electrical conductivity through the aluminum layer and high conductivity into the resistive layer.
Abstract:
A field emission device is disclosed having a buffer layer positioned between an underlying cathode conductive layer and an overlying resistor layer. The buffer layer consists of substantially undoped amorphous silicon. Any pinhole defects or discontinuities that extend through the resistor layer terminate at the buffer layer, thereby preventing the problems otherwise caused by pinhole defects. In particular, the buffer layer prevents breakdown of the resistor layer, thereby reducing the possibility of short circuiting. The buffer layer further reduces the risk of delamination of various layers or other irregularities arising from subsequent processing steps. Also disclosed are methods of making and using the field emission device having the buffer layer.
Abstract:
An improved electrodeless discharge lamp bulb includes an integral ceramic reflector as a portion of the bulb envelope. The bulb envelope further includes two pieces, a reflector portion or segment is cast quartz ceramic and a light transmissive portion is a clear fused silica. In one embodiment, the cast quartz ceramic segment includes heat sink fins or stubs providing an increased outside surface area to dissipate internal heat. In another embodiment, the quartz ceramic segment includes an outside surface fused to eliminate gas permeation by polishing.
Abstract:
A method for forming an emitter tip for use in a field emission device. An emitter layer is provided over a substrate. The emitter layer is overlaid with a blanket dielectric which is in turn overlaid by a masking layer. In a first etching operation, a masking island and an underlying dielectric island are formed from the masking layer and the blanket dielectric, respectively. These islands serve as a masking structure during subsequent etching processes by which an emitter tip is formed from the emitter layer. Accordingly, a second etching operation is conducted, whereby an etch chemistry which exhibits both isotropic and anisotropic characteristics is used to remove a portion of the emitter layer by undercutting beneath the masking structure. A third etching operation is conducted, wherein the etch chemistry is substantially more anisotropic than the etch chemistry of the second etching operation. The second and third etches mobilize a portion of the masking layer and form an emitter tip from the emitter layer. The emitter tip has a substantially rectilinear vertical profile.
Abstract:
The present invention provides an electron emitting device including electrodes disposed with a space therebetween on a surface of a substrate, a carbon film disposed between the electrodes and connected to one of the electrodes, and a gap disposed between the carbon film and the other electrode. In the gap, the distance between the edge of the carbon film connected to one of the electrode and the edge of the other electrode at an upper position apart from the surface of the substrate is smaller than that at the surface of the substrate. The present invention also provides an electron source and an image display device each including the electron emitting device.
Abstract:
An emission device includes a plurality of electron emitter structures of varied geometry that have a conducting layer deposited thereon. The conducting layer has openings located at tunneling sites for each of the electron emitter structures. The tunneling sites facilitate electron emissions from each of the varied geometry electron emitter structures upon voltage biasing of the conducting layer relative to the electron emitter structures.
Abstract:
A field emission device (FED) and a method for fabricating the FED are provided. The FED includes micro-tips with nano-sized surface features. Due to the micro-tips as a collection of a large number of nano-tips, the FED is operable at low gate turn-on voltages with high emission current densities, thereby lowering power consumption.
Abstract:
A field emission cathode device consisting of an electrically conducting material and with a narrow, rod-shaped geometry or a knife edge, to achieve a high amplification of the electric field strength is characterized in that the electron-emitting part of the field emission cathode at least partly has preferred cylindrical host molecules and/or compounds with host compounds and/or cylindrical atomic networks, possibly with end caps with diameters measuring in the nanometer range.
Abstract:
An infrared lamp with a closed-off enveloping tube which encloses an emission source joined with contacts for a power supply in the form of a carbon ribbon which, extending in a direction of a long axis of the enveloping tube, determines an irradiation length of the infrared lamp in the sense of a higher irradiation output. The carbon ribbon has a length which is larger than the irradiation length by a factor of at least 1.5. With a procedure for heating a material to be processed using the infrared lamp, which makes possible short processing times in connection with a simultaneous high degree of energy efficiency, the infrared lamp may be operated such that its maximum emission lies within a wavelength range from 1.8 &mgr;m to 2.9 &mgr;m, and such that its power output comes to at least 15 Watts per cm3 of the volume enclosed by the enveloping tube over the irradiation length.
Abstract translation:具有闭合包络管的红外灯,其封闭与碳带的形式的电源的接触部连接的发射源,该碳带沿着包络管的长轴方向延伸,确定辐射源的照射长度 红外灯的意义在于较高的辐射输出。 碳带的长度大于照射长度至少1.5倍。 通过使用红外线加热待处理材料的方法,这使得可以在同时具有高能量效率的情况下缩短处理时间,红外灯可以被操作,使得其最大发射在1.8的波长范围内 妈妈到2.9um,并且使得其功率输出在包络管围绕照射长度的每cm 3 cm 3的体积中至少为15瓦。
Abstract:
A lamp unit with a light control function for the light emitted from this lamp unit, for which a high pressure mercury lamp is used which is filled with at least 0.15 mg/mm3 mercury and which has a hermetically enclosing arrangement, an essentially hermetically enclosing arrangement or an arrangement in which there is a flow path for actively flowing cooling air within. The lamp unit for a projector has a high pressure mercury lamp of the short arc type with a wall load of at least 1 W/mm2 which is filled with at least 0.15 mg/mm3 mercury, a concave reflector which surrounds this mercury lamp, a front cover which covers the front opening of this concave reflector, a cooling arrangement which can be controlled with respect to its cooling intensity for cooling of the concave reflector and/or the mercury lamp and a control device by which the power of the mercury lamp can be changed, the cooling and the control device being made such that, by controlling the two, a value in the range of 1
Abstract translation:一种用于从该灯单元发射的光的光控制功能的灯单元,其使用高压汞灯,其被填充至少0.15mg / mm 3汞并且具有气密包围的布置,基本上 气密封闭装置或其中存在用于主动流过冷却空气的流路的布置。 用于投影仪的灯单元具有短弧型的高压汞灯,其壁填充量至少为1W / mm 2,其填充有至少0.15mg / mm 3汞柱,凹反射器 围绕该水银灯,覆盖该凹面反射器的前开口的前盖,可以相对于冷却强度来控制的冷却装置,用于冷却凹面反射器和/或水银灯,以及控制装置, 可以改变水银灯的功率,使冷却和控制装置通过控制2来设定在1 <(WxG / V)的范围内的值,其中V(cm 3) )是凹面反射器的内部体积,W(W)是水银灯的额定功率,G(W / mm <2))是壁载荷。 此外,给出了这种灯单元的光控制处理。