公开(公告)号：US5300900A

公开(公告)日：1994-04-05

申请号：US940072

申请日：1992-09-03

Applicant: John V. Bellantoni

Inventor： John V. Bellantoni

IPC: G01S7/285 ,  H01P1/00 ,  H01P1/15 ,  H03G11/00 ,  H03G11/02 ,  H03G11/04 ,  H03K17/76 ,  H04B1/18 ,  H04B3/04

CPC classification number: H03G11/025

Abstract: High-frequency limiter and switch-limiter circuits having reduced insertion loss and improved recovery time are disclosed herein. The high-frequency switch-limiter includes at least one input port and a high-frequency signal path between the input port and a common arm. An input diode generates a first bias current in response to incidence upon the input port of high-energy signals in excess of a predefined power level. A set of protection diodes reflects the high-energy signals upon being switched to an ON state by a portion of the first bias current or by a second bias current, with the protection diodes being disposed to reflect signal energy propagated by the high-frequency signal paths when in the ON state and to pass signal energy propagated by the high-frequency signal paths when in an OFF state. Switching of the protection diodes between the ON and OFF states is expedited by modifying the impedance of a bias network included within a driver network, wherein the driver network is disposed to generate the second bias current in response to a switch control signal.

Abstract translation: 本文公开了具有降低的插入损耗和改进的恢复时间的高频限制器和开关限制器电路。 高频开关限幅器包括输入端口和公共臂之间的至少一个输入端口和高频信号路径。 输入二极管响应于超过预定功率电平的高能量信号的输入端口的入射而产生第一偏置电流。 一组保护二极管通过第一偏置电流的一部分被切换到导通状态或由第二偏置电流反映高能信号，其中保护二极管被设置为反射由高频信号传播的信号能量 处于导通状态的路径，并且当处于断开状态时传递由高频信号路径传播的信号能量。 通过修改包括在驱动器网络内的偏置网络的阻抗来加速保护二极管在ON和OFF状态之间的切换，其中驱动器网络被设置为响应于开关控制信号而产生第二偏置电流。

公开(公告)号：US5296825A

公开(公告)日：1994-03-22

申请号：US940515

申请日：1992-09-04

Applicant: Yoshiyasu Tsuruoka

Inventor： Yoshiyasu Tsuruoka

IPC: H03F1/02 ,  H01P1/00 ,  H01P1/20 ,  H03D9/02 ,  H03F3/20 ,  H03F3/60 ,  H01P5/00 ,  H03F3/19

CPC classification number: H03F3/601 ,  H01P1/2007 ,  H03D9/02

Abstract: In a bias circuit including a transmission line and an open stub for preventing a microwave signal from passing through, the lengths of the open stub and a transmission line between the open stub and main transmission line are near .lambda./4 but not equal to .lambda./4. A leakage signal caused by the above deviations is fed to a detector portion. In the above construction, circuit size of the bias circuit and the detector portion is minimized.

Abstract translation: 在包括用于防止微波信号通过的传输线和开口短路的偏置电路中，开路短路和开路短路与主传输线之间的传输线的长度接近（λ）/ 4但不等于 （λ）/ 4。 由上述偏差引起的泄漏信号被馈送到检测器部分。 在上述结构中，偏置电路和检测器部分的电路尺寸最小化。

公开(公告)号：US5258626A

公开(公告)日：1993-11-02

申请号：US902256

申请日：1992-06-22

Applicant: Andrew H. Suzuki ,  Joseph E. Brandelik

Inventor： Andrew H. Suzuki ,  Joseph E. Brandelik

IPC: H01L39/10 ,  H01L39/14 ,  H01P1/203 ,  H01L39/22 ,  H01B12/00 ,  H01P1/00

CPC classification number: H01P1/203 ,  H01L39/10 ,  Y10S505/701 ,  Y10S505/866

Abstract: A superconducting network which, through the use of optical illumination, can form a selectable array of superconducting microstrip transmission lines or other electrical elements. The invention uses optical illumination to produce quasiparticles which cause selected physical parts of the network to be electrically nonconductive and thereby define the nonilluminated conductor's shape, physical size, and electrical characteristics. Network reconfigurability to produce several different devices and functions from a single high or low temperature superconductive chip is a disclosed utilization of the invention. The employed optical illumination produces phase change within the superconducting material to provide specific chip architectures. Reconfiguring of the device characteristics is achieved by changing the optical input intensity, spatial orientation, wavelength or combinations of these factors. A plurality of delay line configurations are disclosed as examples.

Abstract translation: 通过使用光学照明可以形成可选择的超导微带传输线阵列或其他电气元件的超导网络。 本发明使用光学照明来产生使网络的选定物理部分不导电并因此限定非发光导体的形状，物理尺寸和电特性的准粒子。 本发明公开利用了从单个高温或低温超导芯片产生几种不同装置和功能的网络可重构性。 所采用的光学照明在超导材料内产生相变以提供特定的芯片架构。 通过改变光输入强度，空间取向，波长或这些因素的组合来实现器件特性的重新配置。 作为示例公开了多个延迟线配置。

公开(公告)号：US5218230A

公开(公告)日：1993-06-08

申请号：US751094

申请日：1991-08-28

Applicant: Masaya Tamamura ,  Yoshiro Morino

Inventor： Masaya Tamamura ,  Yoshiro Morino

IPC: H01L23/12 ,  H01L23/057 ,  H01L23/498 ,  H01L23/64 ,  H01P1/00 ,  H01P3/08

CPC classification number: H01L23/057 ,  H01L23/49822 ,  H01L23/64 ,  H01L24/49 ,  H01L2224/16 ,  H01L2224/32188 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/49171 ,  H01L2224/73253 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/16195 ,  H01L2924/3011 ,  H01L2924/30111

Abstract: An IC package comprising a dielectric package body for encapsulating the semiconductor chip (31) and including a bottom member (1), first and second dielectric annular members (3, 7) surrounding the semiconductor chip, and a cap member (10). A first portion of the upper surface of the first dielectric annular member (3) is covered by the second dielectric annular member and a second portion of the upper surface of the first dielectric annular member (3) is exposed, whereby a strip line (Za) is formed by the second conductor film (8), the electric conductor lines (5 and 6), and a first covered portion of the first conductor film (4), and a microstrip line (Zb) is formed by the electric conductor lines (5 and 6), and a second exposed portion of the first conductor film (4). A third conductor film (9a and 9b) to be grounded is provided in the first dielectric annular member (3) in correspondence with second exposed portion of the first dielectric annular member ( 3), which is closer to the conductor lines (5 and 6) than the first conductor film (4) and constituting, with the conductor lines, a further microstrip line (Zb).

Abstract translation: 一种IC封装，包括用于封装半导体芯片（31）并包括底部构件（1）的电介质封装主体，围绕半导体芯片的第一和第二介电环形构件（3,7）和盖构件（10）。 第一介电环形构件（3）的上表面的第一部分被第二介电环形构件覆盖，并且第一介电环形构件（3）的上表面的第二部分被暴露，由此将带状线（Za ）由第二导体膜（8），导电线（5和6）以及第一导体膜（4）的第一覆盖部分形成，并且微带线（Zb）由导电线 （5和6）和第一导体膜（4）的第二暴露部分。 与第一电介质环形构件（3）的第二暴露部分相对应地设置在第一电介质环形构件（3）中的要接地的第三导体膜（9a和9b），其更靠近导体线（5和 6）。 第三导体膜（9a，9b）将微带线（Zb）的阻抗与带状线（Za）的阻抗匹配。 还可以包括另外的导体（9c，14）以减小电源导线（5）的阻抗。

公开(公告)号：US5195710A

公开(公告)日：1993-03-23

申请号：US782471

申请日：1991-10-25

Applicant: Michel Remblier

Inventor： Michel Remblier

IPC: F16B1/02 ,  B23Q1/54 ,  F16B39/12 ,  H01J23/16 ,  H01J23/36 ,  H01P1/00 ,  H01Q1/12

CPC classification number: B23Q1/5462 ,  H01P1/00 ,  H01Q1/125

Abstract: A device for fixing a first element in three dimensions relative to a second element, the device including at least one connecting member extending between two connections. At least one of the connections is constituted by a fixing component of said member and at least one abutment component. The invention is particularly suitable for application to microwave beam transmission.

Abstract translation: 一种用于相对于第二元件三维固定第一元件的装置，该装置包括在两个连接之间延伸的至少一个连接件。 至少一个连接由所述构件的固定部件和至少一个邻接部件构成。 本发明特别适用于微波传输。

公开(公告)号：US5175521A

公开(公告)日：1992-12-29

申请号：US708530

申请日：1991-05-31

Applicant: Lawrence E. Larson

Inventor： Lawrence E. Larson

IPC: H01G5/14 ,  H01P1/00 ,  H01P1/203 ,  H01P3/08 ,  H01P5/04 ,  H01P7/08 ,  H02N1/00

CPC classification number: H01P1/20336 ,  H01P5/04 ,  H01P7/088 ,  H02N1/004

Abstract: A miniature, electrostatically actuated, variable impedance circuit element which is operably tunable in response to control signals. With integrated circuit, thin film processing a fixed circuit member is fabricated on a substrate and a movable circuit member is fabricated over the substrate and is movable relative to the fixed circuit member in response to electrostatic fields produced at armature tabs when the control signals are selectively applied to rows of control electrodes. Embodiments include a variable capacitor and a variable ring resonator.

公开(公告)号：US5014021A

公开(公告)日：1991-05-07

申请号：US476991

申请日：1990-02-08

Applicant: Ralston S. Robertson, Jr. ,  John N. Poelker

Inventor： Ralston S. Robertson, Jr. ,  John N. Poelker

IPC: H01P1/00 ,  H03B1/00 ,  H03B5/18 ,  H03B9/14

CPC classification number: H03B9/141 ,  H03B2009/126 ,  H03B2201/0208 ,  H03B9/146

Abstract: A voltage controlled oscillator having improved frequency linearization characteristics. A radial line, (top-hat) disc geometry in conjunction with a varactor diode are disposed in a broadband, ridged waveguide oscillator circuit to produce a frequency linearized voltage controlled oscillator. A negative resistance device is recessed into the ridged waveguide and coaxially coupled via an impedance transformer to the ridged waveguide cavity. The present invention uses a disc resonator in a ridged waveguide to transform the microwave impedance of a non-RF generating element, a varactor diode, to values which provide improved voltage controlled oscillator tuning linearity. The disc resonator or radial line is located above the varactor diode. The radial line transforms the microave impedance of the varactor diode to a new value which is then coupled into the ridged waveguide circuit and subsequently to the RF generating diode. The circuit impedance, which is a function of the varactor voltage, acts to linearize the frequency versus voltage characteristic of the diode. A comparison of the operation of the circuit with and without the radial line/tuning disc shows a 13:1 improvement in the frequency linearity. Experimental results show that the circuit configuration of the present invention is ideal for use in microwave and millimeter-wave voltage conrolled oscillators which require inherent frequency versus voltage linearity. Since the voltage controlled oscillator frequency linearity is a critical factor in phase locked loop performance, it is especially suited for use in microwave and millimeter-wave radar or communication systems which are frequency agile.

公开(公告)号：US4906957A

公开(公告)日：1990-03-06

申请号：US208424

申请日：1988-06-17

Applicant: William J. Wilson

Inventor： William J. Wilson

IPC: H01P1/00 ,  H05K1/02 ,  H05K1/18 ,  H05K3/34

CPC classification number: H01P1/00 ,  H05K1/0243 ,  H05K1/182 ,  H05K1/183 ,  H05K2201/0187 ,  H05K2201/09036 ,  H05K2201/10969 ,  H05K2203/0455 ,  H05K3/3421

Abstract: An electrical circuit interconnect system employs an electrically conductive enclosure (57) and cover (64) which completely encompasses, hermetically seals (54) and electrically isolates from the outside environment a component (18) mounted on first surface of an insulating substrate (16) of a microwave circiut (56). A plurality of conductors (12) mounted on the first surface of the insulating substrate (16) electrically connect the component (18) to the outside electrical circuitry by passing under a corresponding plurality of pass-through bores (58) within the base of the enclosure (57). Specifically, within each respective passthrough bore (58), a corresponding glass encased conductor (60 and 62) electrically connects each conductor (12) within the enclosure to a conductor outside of the enclosure (57). A plurality of conductor paths (66) extend through bores in the insulating substrate (16) to electrically connect the enclosure (57) to a circuit ground plane (14) located on a second surface, opposite to the first surface, of the insulating substrate (16 ).

Abstract translation: 电路互连系统采用完全包围的绝缘外壳（57）和覆盖物（64），其将绝缘基板（16）的第一表面上安装的部件（18）气密地密封（54）并与外部环境电隔离， 的微波电路（56）。 安装在绝缘基板（16）的第一表面上的多个导体（12）通过在相应的多个通孔（58）内通过相应的多个穿通孔（58）而将部件（18）与外部电路电连接 外壳（57）。 具体地，在每个相应的通气孔（58）内，对应的玻璃封装导体（60和62）将外壳内的每个导体（12）电连接到外壳（57）外部的导体。 多个导体路径（66）延伸穿过绝缘基板（16）中的孔，以将外壳（57）电连接到位于与第一表面相反的第二表面上的电路接地平面（14），绝缘基板 （16）。

公开(公告)号：US4853649A

公开(公告)日：1989-08-01

申请号：US151625

申请日：1988-02-02

Applicant: Kiyoharu Seino ,  Tadashi Takagi ,  Fumio Takeda ,  Yukio Ikeda

Inventor： Kiyoharu Seino ,  Tadashi Takagi ,  Fumio Takeda ,  Yukio Ikeda

IPC: H03F1/30 ,  H01L27/06 ,  H01P1/00 ,  H03F3/60

CPC classification number: H01L27/0605 ,  H03F3/607

Abstract: A distributed FET amplifier comprising an array of FET elements each having a gate terminal, a drain terminal and a source terminal. The gate terminals of the adjacent FET elements are connected by a first inductor, and the drain terminals of the adjacent FET elements are connected by a second inductor. Between the source terminals of each of the FET elements and the ground is connected a parallel circuit comprising a capacitor having a capacitance greater than the gate-source capacitance of the FET element and an impedance element connected in parallel to the capacitor for grounding the direct current. A bias voltage supply circuit for supplying a bias voltage to such as distributed amplifier is also disclosed.

Abstract translation: 一种分布式FET放大器，包括各自具有栅极端子，漏极端子和源极端子的FET元件阵列。 相邻FET元件的栅极端子通过第一电感器连接，并且相邻FET元件的漏极端子通过第二电感器连接。 在每个FET元件的源极端子和地之间连接有并联电路，该并联电路包括具有大于FET元件的栅极 - 源极电容的电容的电容器和与电容器并联连接的用于接地直流电的阻抗元件 。 还公开了一种用于向分布式放大器提供偏置电压的偏置电压供应电路。

公开(公告)号：US4810981A

公开(公告)日：1989-03-07

申请号：US58017

申请日：1987-06-04

Applicant: Dov Herstein

Inventor： Dov Herstein

IPC: H01P1/00 ,  H01P1/04 ,  H01P5/00

CPC classification number: H01P1/047 ,  H01P1/00

Abstract: This microwave assembly comprises a pair of microwave components and a stripline connecting device interconnecting the components. Each of the components comprises a conductive carrier defining a ground plane, dielectric material on the conductive carrier, and a conductor on the dielectric material having a projecting end portion. The stripline connecting device comprises: (a) a central conductor having conductive terminal portions at opposite ends thereof for respectively contacting the projecting end portions of the conductors of the microwave components, (b) two sections of dielectric material respectively located at opposite sides of the central conductor, and (c) two housing portions of conductive material defining a ground plane for the connecting device and located at opposite sides of the dielectric sections. The connecting device further includes fastening devices for clamping the housing portions together, with the dielectric sections sandwiched between the housing portions and with the terminal portions of the central conductor and the projecting end portions of the conductors of the microwave components sandwiched between the dielectric sections.

Abstract translation: 该微波组件包括一对微波部件和互连部件的带状线连接装置。 每个组件包括限定接地平面的导电载体，导电载体上的电介质材料，以及具有突出端部分的电介质材料上的导体。 带状线连接装置包括：（a）中心导体，其相对端部具有导电端子部分，用于分别接触微波部件的导体的突出端部，（b）分别位于 中心导体和（c）导电材料的两个壳体部分，其限定用于连接装置的接地平面并且位于电介质部分的相对侧。 连接装置还包括用于将壳体部分夹在一起的紧固装置，其中介电部分夹在壳体部分之间并与中心导体的端子部分和夹在介质部分之间的微波部件的导体的突出端部分夹在中间。