公开(公告)号：US4780890A

公开(公告)日：1988-10-25

申请号：US913050

申请日：1986-09-29

申请人： Michael G. Kane

发明人： Michael G. Kane

IPC分类号： H04J3/06 ,  H03K23/66 ,  H04L7/00

CPC分类号： H03K23/667

摘要： A pulse swallower 41 utilizes a local feedback loop (51 and 52) on its output flip-flop (49) enabling it to extinguish its high level output after one cycle of the clock signal being applied as an input. The other input to the pulse swallower is the swallow signal which initiates a pulse swallow cycle for eliminating a single clock pulse of the input clock (42) from appearing at the clock output (44). This configuration of a pulse swallower enables correct operation, or single pulse swallowing, to occur at frequencies of up to one-over-four.tau.(1/4.tau.) which is higher than that of conventional pulse swallowers.

摘要翻译： 脉冲吞咽器41在其输出触发器（49）上利用局部反馈回路（51和52），使得其能够在作为输入施加时钟信号的一个周期之后熄灭其高电平输出。 脉冲吞吐器的另一个输入是吞咽信号，其启动脉冲吞咽周期以消除输入时钟（42）的单个时钟脉冲，从而不在时钟输出（44）处出现。 脉冲吞咽的这种配置使得能够以高于常规脉冲吞咽的高达四分之一的tau（1/4 tau）的频率发生正确的操作或单次脉冲吞咽。

公开(公告)号：US4227036A

公开(公告)日：1980-10-07

申请号：US943487

申请日：1978-09-18

申请人： William Fitzgerald

发明人： William Fitzgerald

IPC分类号： H01L23/057 ,  H01L23/08 ,  H01L23/36 ,  H01L23/373 ,  H05K7/20

CPC分类号： H01L23/057 ,  H01L23/08 ,  H01L23/36 ,  H01L23/3735 ,  H01L2924/0002 ,  H01L2924/01079 ,  Y10T403/217

摘要： An improved ceramic-based package for electronic devices having a composite flange for heat dissipation comprising a layer of heat conducting metal having a thermal coefficient of expansion appreciably different from that of the base secured to the base and a second layer of metal secured to the first layer having a thermal coefficient of expansion approximately equal to that of the ceramic. In a preferred embodiment, the first layer is copper, and the second is molybdenum.

摘要翻译： 一种用于电子器件的改进的基于陶瓷的封装，其具有用于散热的复合凸缘，其包括导热金属层，所述导热金属的热膨胀系数与固定到所述基座的所述基座的热膨胀系数有明显不同，第二金属层固定到所述第一 其热膨胀系数大致等于陶瓷的热膨胀系数。 在优选的实施方案中，第一层是铜，第二层是钼。

公开(公告)号：US3651434A

公开(公告)日：1972-03-21

申请号：US3651434D

申请日：1969-04-30

申请人： MICROWAVE SEMICONDUCTOR CORP

发明人： MCGEOUGH PATRICK L ,  GILBERT GEORGE J ,  HENRIKSON DONALD F

IPC分类号： H01L23/04 ,  G02B5/20 ,  H01L21/60 ,  H01L23/02 ,  H01L23/12 ,  H01L23/66 ,  H01P3/08 ,  H05K1/18 ,  H05K9/00

CPC分类号： H01L24/85 ,  G02B5/20 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6644 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/49109 ,  H01L2224/49175 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01067 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/16195 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H01P3/08 ,  H01L2224/78 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/85399 ,  H01L2224/45015 ,  H01L2924/207

摘要： An hermetically sealed microwave package for holding a transistor or other microwave device has a multiplane terminal arrangement which facilitates use with strip transmission line. Input and output circuits are shielded to reduce mutual coupling, and degenerative coupling in the common or ground plane connection is largely avoided. The input and output circuits have a strip transmission line configuration and may be designed for impedance matching purposes. A thermally conductive path is provided from the mounting surface to the exterior, and a heat sink may readily be attached.

摘要翻译： 用于保持晶体管或其他微波器件的气密密封微波封装具有便于与带状传输线一起使用的多平面端子布置。 输入和输出电路被屏蔽以减少相互耦合，并且在很大程度上避免了在公共或接地平面连接中的退化耦合。 输入和输出电路具有条形传输线配置，并且可以被设计用于阻抗匹配目的。 从安装表面向外部提供导热路径，并且可以容易地附接散热器。

公开(公告)号：US4223336A

公开(公告)日：1980-09-16

申请号：US886479

申请日：1978-03-14

申请人： James W. Thompson

发明人： James W. Thompson

IPC分类号： H01L29/207 ,  H01L29/45 ,  H01L29/167 ,  H01L29/227

CPC分类号： H01L29/207 ,  H01L29/452

摘要： Ohmic contacts having reduced resistivity and enhanced current-carrying capability are fabricated in compound semiconductor devices by substantially saturating the compound semiconductor with two different impurities of the same conductivity type, the different impurities being respectively suitable for occupying the two different types of impurity sites available in the compound semiconductor. The result is a sufficient increase in available carriers that conductivity takes place primarily through field emission tunneling and is enhanced to a degree wholly disproportionate to the increase in the number of available carriers.

摘要翻译： 通过用相同导电类型的两种不同杂质基本上饱和化合物半导体，在化合物半导体器件中制造具有降低的电阻率和增加的载流能力的欧姆接触，不同的杂质分别适合于占据可用的两种不同类型的杂质位置 化合物半导体。 结果是可用载体的充分增加，导电性主要通过场致发射隧道发生，并且增强到与可用载体数量的增加完全不成比例的程度。

公开(公告)号：US4194174A

公开(公告)日：1980-03-18

申请号：US916904

申请日：1978-06-19

申请人： Michael F. DeLise

发明人： Michael F. DeLise

IPC分类号： H01C1/034 ,  H01C1/142 ,  H01C7/22 ,  H01C17/08 ,  H01C1/012

CPC分类号： H01C1/034 ,  H01C1/142 ,  H01C17/08 ,  H01C7/22

摘要： A ballasted finger electrode structure is fabricated on a substrate by the steps of depositing on the substrate a layer of resistive material, forming one or more dielectric regions on the resistive layer; and forming two or more finger electrode segments spaced apart over one or more of the dielectric regions but electrically connected by the resistive region underlying the dielectric region. The result is a finger electrode structure with a precisely defined length of resistive ballasting.

摘要翻译： 通过以下步骤在衬底上制造镇流指状电极结构：在电阻层上形成一层或多层电介质区域的步骤：在衬底上沉积一层电阻材料; 并且形成两个或更多个在一个或多个介电区域间隔开的指状电极段，但是通过电介质区域下方的电阻区域电连接。 结果是具有精确限定长度的电阻镇流器的手指电极结构。

公开(公告)号：US4161740A

公开(公告)日：1979-07-17

申请号：US849302

申请日：1977-11-07

申请人： Richard H. Frey

发明人： Richard H. Frey

IPC分类号： H01L21/60 ,  H01L23/482 ,  H01L23/66 ,  H01L29/72

CPC分类号： H01L24/81 ,  H01L23/4824 ,  H01L23/66 ,  H01L2224/16 ,  H01L2224/49175 ,  H01L2224/81801 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01033 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111

摘要： A transistor having small, closely spaced emitter and base contact areas and an active area capable of generating heat to be removed, is provided with an electrode structure comprising a finger electrode for connecting emitter or base contact areas with one or more bonding pads beside the active area and, electrically insulated from the finger electrode, a bonding plate electrode overlaying at least a portion of the active area for electrically contacting the base or emitter contact areas, respectively. This contact structure has reduced interconnection inductance and resistance, reduced MOS capacitance, and reduced thermal resistance. In addition, it provides a structure which is suitable for both conventional and flip chip mounting.

摘要翻译： 具有小的，紧密间隔的发射极和基极接触区域以及能够产生待除去热量的有源区域的晶体管设置有电极结构，该电极结构包括用于将发射极或基极接触区域与活性物体旁边的一个或多个接合焊盘连接的指状电极 区域，并且与指状电极电绝缘;覆盖有源区域的至少一部分的接合板电极，用于分别电接触基极或发射极接触区域。 该接触结构减少了互连电感和电阻，降低了MOS电容，降低了热阻。 此外，它提供了适用于常规和倒装芯片安装的结构。

公开(公告)号：US4200880A

公开(公告)日：1980-04-29

申请号：US891009

申请日：1978-03-28

申请人： Richard H. Frey

发明人： Richard H. Frey

IPC分类号： H01L23/66 ,  H01L27/02

CPC分类号： H01L23/66 ,  H01L24/49 ,  H01L2223/6644 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111

摘要： A microwave transistor having a base and an elongated collector is provided with an elongated, grounded, DC blocking capacitor co-extensive with the collector and the output capacitance (C.sub.ob) is tuned within the transistor package by distributing along the collector a plurality of inductive wire leads connecting the collector to the base through the DC blocking capacitor. Ground returns are provided by base connections to ground on both the input and output sides of the transistor. Such an arrangement provides isolation between input and output while uniformly distributing the reactance of the tuning elements across the entire active area. The result is an increased power output as compared to conventional shunt tuning arrangements.

摘要翻译： 具有基极和细长集电极的微波晶体管设置有与集电极共同扩展的细长的接地的隔直流电容器，并且通过沿着集电极分布多个感应导线，在晶体管封装内调节输出电容（Cob） 引线通过隔直流电容器将集电极连接到基极。 接地回路由晶体管的输入和输出侧的接地基极连接提供。 这种布置提供输入和输出之间的隔离，同时均匀地分布调谐元件的电抗跨整个有源区域。 与常规分流调谐装置相比，结果是增加的功率输出。

公开(公告)号：US3582726A

公开(公告)日：1971-06-01

申请号：US3582726D

申请日：1969-09-03

申请人： MICROWAVE SEMICONDUCTOR CORP

发明人： GILBERT GEORGE J ,  ROSENZWEIG RONALD

IPC分类号： H01L29/00 ,  H01L29/73 ,  H01L11/00 ,  H01L15/00

CPC分类号： H01L29/00 ,  H01L29/73

摘要： Emitter rows each having a plurality of discrete base areas spaced therealong alternate with rows of base material. Emitter contact areas extend through an insulating layer between discrete base areas. Base contact areas extend through the insulating layer to the discrete base areas and to spaced areas in the base rows, preferably in aligned columns. Advantageously the outer rows are base rows and opposite ends of the emitter rows are open ended.