公开(公告)号：US09275838B2

公开(公告)日：2016-03-01

申请号：US12552474

申请日：2009-09-02

申请人： Eller Y. Juco ,  Neungho Shin ,  Yunsang Kim ,  Andrew Bailey

发明人： Eller Y. Juco ,  Neungho Shin ,  Yunsang Kim ,  Andrew Bailey

IPC分类号： H01J37/32

CPC分类号： H01J37/32183 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32706 ,  H01J2237/334

摘要： An arrangement for controlling bevel etch rate during plasma processing within a processing chamber. The arrangement includes a power source and a gas distribution system. The arrangement also includes a lower electrode, which is configured at least for supporting a substrate. The arrangement further includes a top ring electrode positioned above the substrate and a bottom ring electrode positioned below the substrate. The arrangement yet also includes a first match arrangement coupled to the top ring electrode and configured at least for controlling current flowing through the top ring electrode to control amount of plasma available for etching at least a part of the substrate top edge. The arrangement yet further includes a second match arrangement configured to control the current flowing through the bottom ring electrode to control amount of plasma available for at least etching at least a part of the substrate bottom edge.

摘要翻译： 一种用于在处理室内的等离子体处理期间控制斜面蚀刻速率的装置。 该装置包括电源和气体分配系统。 该布置还包括下电极，其被配置为至少用于支撑衬底。 该布置还包括位于基板上方的顶环电极和位于基板下方的底环电极。 该布置还包括耦合到顶环电极并且被配置为至少用于控制流过顶环电极的电流以控制可用于蚀刻衬底顶部边缘的至少一部分的等离子体的第一匹配布置。 该装置还包括第二匹配装置，其被配置为控制流过底环电极的电流以控制可用于至少蚀刻至少一部分衬底底边缘的等离子体的量。

公开(公告)号：US08501283B2

公开(公告)日：2013-08-06

申请号：US12907149

申请日：2010-10-19

申请人： Neungho Shin ,  Patrick Chung ,  Yunsang Kim

发明人： Neungho Shin ,  Patrick Chung ,  Yunsang Kim

IPC分类号： H05H1/24

CPC分类号： H01L21/67069 ,  H01J37/32366 ,  H01J37/32376 ,  H01J37/32568 ,  H01L21/2007 ,  H01L21/30625 ,  H01L21/3083 ,  H01L21/67017

摘要： A method of film deposition using localized plasma to protect bevel edge of a wafer in a plasma chamber. The method includes adjusting an electrode gap between a movable electrode and a stationary electrode, the wafer being disposed on one of the movable electrode and the stationary electrode, to a gap distance configured to prevent plasma formation over a center portion of the wafer, the gap distance also dimensioned such that a plasma-sustainable condition around the bevel edge of the wafer is formed after the adjusting. The method also includes flowing deposition gas into the plasma chamber. The method includes maintaining, using a heater, a chuck temperature that is configured to facilitate film deposition on the bevel edge. The method further includes generating the localized plasma from the deposition gas for depositing a film on the bevel edge.

摘要翻译： 使用局部等离子体的膜沉积方法来保护等离子体室中的晶片的斜边缘。 该方法包括调整可动电极和固定电极之间的电极间隙，将晶片设置在可动电极和固定电极中的一个上，形成为防止等离子体在晶片的中心部分形成的间隙距离，间隙 距离也被确定为使得在调整之后形成围绕晶片的斜边缘的等离子体可持续状态。 该方法还包括将沉积气体流入等离子体室。 该方法包括使用加热器维持配置成有助于膜倾斜边缘上的膜沉积的卡盘温度。 该方法还包括从沉积气体产生局部等离子体，以便在斜面边缘上沉积膜。

公开(公告)号：US20120305189A1

公开(公告)日：2012-12-06

申请号：US13584646

申请日：2012-08-13

申请人： KeeChan Kim ,  Yunsang Kim ,  Andrew D. Bailey, III

发明人： KeeChan Kim ,  Yunsang Kim ,  Andrew D. Bailey, III

IPC分类号： C23F1/08

CPC分类号： H01L21/67069 ,  G01N21/68 ,  H01L21/67028 ,  H01L21/67253

摘要： A method for detecting plasma unconfinement in a reaction chamber during a bevel edge cleaning operation is provided. The method initiates with selecting a wavelength associated with expected by products of a bevel edge clean process. The method includes cleaning the bevel edge area of a substrate and monitoring the intensity of the selected wavelengths during the cleaning for deviation from a threshold wavelength intensity. The cleaning is terminated if the deviation from the threshold wavelength intensity exceeds a target deviation.

摘要翻译： 提供了一种用于在斜边清洁操作期间检测反应室中的等离子体无约束的方法。 该方法通过选择与倾斜边缘清洁过程的产品预期相关联的波长来启动。 该方法包括清洁衬底的斜边缘区域并在清洁期间监测所选波长的强度以偏离阈值波长强度。 如果偏离阈值波长强度超过目标偏差，则清除结束。

公开(公告)号：US08298433B2

公开(公告)日：2012-10-30

申请号：US12648264

申请日：2009-12-28

申请人： Hyungsuk Alexander Yoon ,  Yunsang Kim ,  Jason A. Ryder ,  Andrew D. Bailey, III

发明人： Hyungsuk Alexander Yoon ,  Yunsang Kim ,  Jason A. Ryder ,  Andrew D. Bailey, III

IPC分类号： C23F1/00 ,  H01L21/3065 ,  C23C16/505

CPC分类号： H01L21/02087 ,  H01J37/32541 ,  H01J37/3255 ,  H05H1/2406 ,  H05H2001/2412

摘要： A method for generating plasma for removing an edge polymer from a substrate is provided. The method includes providing a powered electrode assembly, which includes a powered electrode, a dielectric layer, and a wire mesh disposed between the powered electrode and the dielectric layer. The method also includes providing a grounded electrode assembly disposed opposite the powered electrode assembly to form a cavity wherein the plasma is generated. The wire mesh is shielded from the plasma by the dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the edge polymer. The method further includes introducing at least one inert gas and at least one process gas into the cavity. The method yet also includes applying an RF field to the cavity using the powered electrode to generate the plasma from the inert gas and process gas.

摘要翻译： 提供了一种用于从衬底除去边缘聚合物的等离子体的方法。 该方法包括提供一种动力电极组件，其包括供电电极，电介质层和布置在电源电极和电介质层之间的金属丝网。 该方法还包括提供与动力电极组件相对设置的接地电极组件，以形成其中产生等离子体的空腔。 当等离子体存在于空腔中时，金属丝网通过电介质层被屏蔽，等离子体在一端具有出口，用于提供等离子体以去除边缘聚合物。 该方法还包括将至少一种惰性气体和至少一种工艺气体引入空腔中。 该方法还包括使用动力电极将RF场施加到空腔，以从惰性气体和处理气体产生等离子体。

公开(公告)号：US20120074099A1

公开(公告)日：2012-03-29

申请号：US13300483

申请日：2011-11-18

申请人： Tong Fang ,  Yunsang Kim ,  Andrew D. Bailey, III ,  Olivier Rigoutat ,  George Stojakovic

发明人： Tong Fang ,  Yunsang Kim ,  Andrew D. Bailey, III ,  Olivier Rigoutat ,  George Stojakovic

IPC分类号： C23F1/00

CPC分类号： H01J37/32449 ,  H01J37/32091 ,  H01J2237/3341 ,  H01L21/02087

摘要： Methods for bevel edge etching are provided. One example method is for etching a film on a bevel edge of a substrate in a plasma etching chamber. The method includes providing the substrate on a substrate support in the plasma etching chamber. The plasma etching chamber has a top edge electrode and a bottom edge electrode disposed to surround the substrate support. Then flowing an etching process gas through a plurality of edge gas feeds disposed along a periphery of the gas delivery plate. The periphery of the gas deliver plate is oriented above the substrate support and the bevel edge of the substrate, and the flowing is further directed to a space between the top edge electrode and bottom edge electrode. And, flowing a tuning gas through a center gas feed of the gas delivery plate.

摘要翻译： 提供斜边蚀刻方法。 一种示例性方法是在等离子体蚀刻室中蚀刻衬底的斜边缘上的膜。 该方法包括将基板设置在等离子体蚀刻室中的基板支撑件上。 等离子体蚀刻室具有顶部边缘电极和设置成围绕基板支撑件的底部边缘电极。 然后使蚀刻处理气体流过沿着气体输送板的周边布置的多个边缘气体进料。 气体输送板的周边定位在基板支撑件和基板的斜边缘上方，并且流动进一步被引导到顶部边缘电极和底部边缘电极之间的空间。 并且，使调谐气体流过气体输送板的中心气体进料。

公开(公告)号：US07909960B2

公开(公告)日：2011-03-22

申请号：US11440561

申请日：2006-05-24

申请人： Yunsang Kim ,  Andrew D. Bailey, III

发明人： Yunsang Kim ,  Andrew D. Bailey, III

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32532 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32862

摘要： Improved mechanisms of removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and etch byproducts on substrate backside and chamber interior is provided to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. An exemplary plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode surrounding a substrate support in the plasma processing chamber, wherein the substrate support is configured to receive the substrate and the bottom edge electrode and the substrate support are electrically isolated from each other by a bottom dielectric ring. The chamber also includes a top edge electrode surrounding a gas distribution plate opposing the substrate support, wherein the top edge electrode and the gas distribution plate are electrically isolated from each other by a top dielectric ring, and the top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate.

摘要翻译： 提供了去除蚀刻副产物，电介质膜和金属薄膜附近基板斜边缘的改进机理，以及衬底背面和腔室内部的蚀刻副产物，以避免聚合物副产物和沉积膜的堆积并提高工艺产率。 提供了一种构造成清洁衬底的斜边缘的示例性等离子体蚀刻处理室。 所述腔室包括围绕所述等离子体处理室中的衬底支撑件的底部边缘电极，其中所述衬底支撑件构造成接收所述衬底，并且所述底部边缘电极和所述衬底支撑件通过底部电介质环彼此电隔离。 该室还包括围绕与衬底支撑件相对的气体分配板的顶部边缘电极，其中顶部边缘电极和气体分配板通过顶部介电环彼此电隔离，并且顶部边缘电极和底部边缘电极 被配置为产生清洁等离子体以清洁基板的斜边缘。

公开(公告)号：US20080311758A1

公开(公告)日：2008-12-18

申请号：US11818621

申请日：2007-06-14

申请人： Andrew D. Bailey ,  Yunsang Kim

发明人： Andrew D. Bailey ,  Yunsang Kim

IPC分类号： H01L21/302 ,  H01L21/306

CPC分类号： H01J37/32385 ,  H01J37/321 ,  H01J37/32366 ,  H01J37/32706 ,  H01L21/02087 ,  H01L21/67069 ,  H01L21/6715

摘要： Apparatus and methods protect a central process exclusion region of a substrate during processing of an edge environ region of process performance. Removal of undesired materials is only from the edge environ region while the central device region is protected from damage. Field strengths are configured to protect the central region from charged particles from plasma in a process chamber and to foster removal of the undesired materials from only the edge environ region. A magnetic field is configured with a peak value adjacent to a border between the central and edge environ regions. A strong field gradient extends from the peak radially away from the border and away from the central region to repel the charged particles from the central region. The strength and location of the field are adjustable by axial relative movement of magnet sections, and flux plates are configured to redirect the field for desired protection.

摘要翻译： 装置和方法在处理工艺性能的边缘环境区域期间保护衬底的中心过程排除区域。 去除不需要的材料仅来自边缘环境区域，而中央设备区域被保护免受损坏。 场强被配置为保护中心区域免受处理室中的带电粒子等离子体的影响，并且仅促进从边缘环境区域移除不需要的材料。 磁场配置有与中央和边缘环境区域之间的边界相邻的峰值。 强场梯度从径向远离边界并远离中心区域从峰值延伸，以将带电粒子从中心区域排斥。 磁场的强度和位置可以通过磁体部分的轴向相对运动来调节，并且磁通板被配置为重定向磁场以达到期望的保护。

公开(公告)号：US20080190448A1

公开(公告)日：2008-08-14

申请号：US11672922

申请日：2007-02-08

申请人： Yunsang Kim ,  Andrew Bailey ,  Greg Sexton ,  Keechan Kim ,  Andras Kuthi

发明人： Yunsang Kim ,  Andrew Bailey ,  Greg Sexton ,  Keechan Kim ,  Andras Kuthi

IPC分类号： B08B6/00

CPC分类号： H01L21/02087

摘要： An apparatus for removing material on a bevel of a wafer is provided. A wafer support with a diameter that is less than the diameter of the wafer, wherein the wafer support is on a first side of the wafer, and wherein an outer edge of the wafer extends beyond the wafer support around the wafer is provided. An RF power source is electrically connected to the wafer. A central cover is spaced apart from the wafer support. A first electrically conductive ring is on the first side of and spaced apart from the wafer. A second electrically conductive ring is spaced apart from the wafer. An electrically conductive liner surrounds the outer edge of the wafer. A switch is between the liner and ground, allowing the liner to be switched from being grounded to floating.

摘要翻译： 提供了用于在晶片的斜面上去除材料的设备。 提供直径小于晶片直径的晶片支架，其中所述晶片支撑件位于所述晶片的第一侧上，并且其中所述晶片的外边缘延伸超过所述晶片支撑件围绕所述晶片。 RF电源电连接到晶片。 中心盖与晶片支撑件间隔开。 第一导电环位于晶片的第一侧并与晶片间隔开。 第二导电环与晶片间隔开。 导电衬套围绕晶片的外边缘。 开关在衬垫和接地之间，允许衬管从接地切换到浮动。

公开(公告)号：US20080050923A1

公开(公告)日：2008-02-28

申请号：US11510309

申请日：2006-08-25

申请人： Yunsang Kim ,  Andrew Bailey ,  Jack Chen

发明人： Yunsang Kim ,  Andrew Bailey ,  Jack Chen

IPC分类号： H01L21/461 ,  H01L21/302 ,  C03C25/68

CPC分类号： H01L21/02041 ,  H01L21/02087 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67069 ,  H01L21/6833

摘要： A method for etching a bevel edge of a substrate is provided. A patterned photoresist mask is formed over the etch layer. The bevel edge is cleaned comprising providing a cleaning gas comprising at least one of a CO2, CO, CxHy, H2, NH3, CxHyFz and a combination thereof, forming a cleaning plasma from the cleaning gas, and exposing the bevel edge to the cleaning plasma. Features are etched into the etch layer through the photoresist features and the photoresist mask is removed.

摘要翻译： 提供了蚀刻基板的斜边缘的方法。 在蚀刻层上形成图案化的光致抗蚀剂掩模。 所述斜边缘被清洁，包括提供清洁气体，所述清洁气体包括CO 2，CO，C，H，H，H， > 2，NH 3，C x H，Y z和它们的组合，形成 来自清洁气体的清洁等离子体，并将斜面边缘暴露于清洁等离子体。 通过光致抗蚀剂特征将特征蚀刻到蚀刻层中，并去除光致抗蚀剂掩模。

公开(公告)号：US20070048447A1

公开(公告)日：2007-03-01

申请号：US11461415

申请日：2006-07-31

申请人： Alan Lee ,  Andrew Bailey ,  William Thie ,  Yunsang Kim ,  Yezdi Dordi

发明人： Alan Lee ,  Andrew Bailey ,  William Thie ,  Yunsang Kim ,  Yezdi Dordi

IPC分类号： B05D3/10 ,  B05D1/32 ,  C23C16/00

CPC分类号： H05K3/184 ,  C23C18/1605 ,  C23C18/1642 ,  C23C18/1669 ,  C23C18/1879 ,  C23C18/1882 ,  C23C18/38 ,  C23C18/40 ,  H05K3/064 ,  H05K2203/0571 ,  H05K2203/072 ,  H05K2203/087

摘要： A method for forming copper on a substrate including inputting a copper source solution into a mixer, inputting a reducing solution into the mixer, mixing copper source solution and the reducing solution to form a plating solution having a pH of greater than about 6.5 and applying the plating solution to a substrate, the substrate including a catalytic layer wherein applying the plating solution to the substrate includes forming a catalytic layer, maintaining the catalytic layer in a controlled environment and forming copper on the catalytic layer. A system for forming copper structures is also disclosed.

摘要翻译： 一种在基板上形成铜的方法，包括将铜源溶液输入到混合器中，将还原溶液输入到混合器中，将铜源溶液和还原溶液混合以形成pH大于约6.5的电镀溶液， 电镀溶液到基板上，所述基板包括催化层，其中将所述电镀液施加到所述基板上包括形成催化剂层，将所述催化剂层保持在受控环境中并在所述催化层上形成铜。 还公开了一种用于形成铜结构的系统。