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    Large area plasma processing chamber with at-electrode RF matching
    1.
    发明授权
    Large area plasma processing chamber with at-electrode RF matching 有权
    大面积等离子体处理室，具有电极RF匹配

    公开(公告)号：US08691047B2

    公开(公告)日：2014-04-08

    申请号：US12948164

    申请日：2010-11-17

    Applicant: Carl A. Sorensen ,  John M. White ,  Jozef Kudela

    Inventor： Carl A. Sorensen ,  John M. White ,  Jozef Kudela

    IPC: C23C16/505 ,  H01L21/3065

    CPC classification number: H01J37/32577 ,  H01J37/32091 ,  H01J37/32183

    Abstract: A plasma processing system having at-electrode RF matching and a method for processing substrates utilizing the same is provided. In one embodiment, the plasma processing system includes a chamber body, the substrate support, an electrode, a lid assembly and an RF tuning element. A substrate support is disposed in a processing volume defined in the chamber body. The electrode is positioned above the substrate support and below a cover of the lid assembly. The RF tuning element is disposed between the cover and the electrode and is coupled to the electrode.

    Abstract translation: 提供具有电极射频匹配的等离子体处理系统以及利用该等离子体处理基板的方法。 在一个实施例中，等离子体处理系统包括室主体，衬底支撑件，电极，盖组件和RF调谐元件。 基板支撑件设置在室主体中限定的处理空间中。 电极位于衬底支撑件的上方并位于盖子组件的盖子的下面。 RF调谐元件设置在盖和电极之间并且耦合到电极。

    LINEAR PECVD APPARATUS
    2.
    发明申请
    LINEAR PECVD APPARATUS 审中-公开
    线性PECVD设备

    公开(公告)号：US20130206068A1

    公开(公告)日：2013-08-15

    申请号：US13764832

    申请日：2013-02-12

    Applicant: Jozef KUDELA ,  Suhail ANWAR ,  Carl A. SORENSEN ,  Douglas TRUONG ,  John M. WHITE

    Inventor： Jozef KUDELA ,  Suhail ANWAR ,  Carl A. SORENSEN ,  Douglas TRUONG ,  John M. WHITE

    IPC: C23C16/511

    CPC classification number: C23C16/511 ,  C23C16/54

    Abstract: The present invention generally relates to a linear PECVD apparatus. The apparatus is designed to process two substrates simultaneously so that the substrates share plasma sources as well as gas sources. The apparatus has a plurality of microwave sources centrally disposed within the chamber body of the apparatus. The substrates are disposed on opposite sides of the microwave sources with the gas sources disposed between the microwave sources and the substrates. The shared microwave sources and gas sources permit multiple substrates to be processed simultaneously and reduce the processing cost per substrate.

    Abstract translation: 本发明一般涉及线性PECVD装置。 该设备被设计成同时处理两个基板，使得基板共享等离子体源以及气体源。 该装置具有集中设置在该装置的室主体内的多个微波源。 基板设置在微波源的相对侧上，气源设置在微波源和基板之间。 共享的微波源和气源允许同时处理多个基板，并降低每个基板的加工成本。

    Remote inductively coupled plasma source for CVD chamber cleaning
    5.
    发明授权
    Remote inductively coupled plasma source for CVD chamber cleaning 有权
    用于CVD室清洁的远程感应耦合等离子体源

    公开(公告)号：US08075734B2

    公开(公告)日：2011-12-13

    申请号：US12114127

    申请日：2008-05-02

    Applicant: Carl A. Sorensen ,  Jozef Kudela

    Inventor： Carl A. Sorensen ,  Jozef Kudela

    IPC: C23C16/00 ,  H01L21/306

    CPC classification number: C23C16/4405 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32862 ,  H05H1/46

    Abstract: The present invention generally includes a remote plasma source and a method of generating a plasma in a remote plasma source. Cleaning gas may be ignited into a plasma in a remote location and then provided to the processing chamber. By flowing the cleaning gas outside of a cooled RF coil, a plasma may be ignited at either high or low pressure while providing a high RF bias to the coil. Cooling the RF coil may reduce sputtering of the coil and thus reduce undesirable contaminants from being fed to the processing chamber with the cleaning gas plasma. Reduced sputtering from the coil may extend the useful life of the remote plasma source.

    Abstract translation: 本发明通常包括远程等离子体源和在远程等离子体源中产生等离子体的方法。 清洁气体可以被点燃到远程位置的等离子体中，然后提供给处理室。 通过将清洁气体流过冷却的RF线圈外，可以在高压或低压下点燃等离子体，同时向线圈提供高RF偏压。 冷却RF线圈可以减少线圈的溅射，从而减少不期望的污染物从清洁气体等离子体送入处理室。 从线圈减少的溅射可延长远程等离子体源的使用寿命。

    Asymmetrical RF Drive for Electrode of Plasma Chamber
    6.
    发明申请
    Asymmetrical RF Drive for Electrode of Plasma Chamber 有权
    等离子室电极的非对称RF驱动

    公开(公告)号：US20090159423A1

    公开(公告)日：2009-06-25

    申请号：US12343519

    申请日：2008-12-24

    Applicant: Jozef Kudela ,  Carl A. Sorensen ,  Soo Young Choi ,  John M. White

    Inventor： Jozef Kudela ,  Carl A. Sorensen ,  Soo Young Choi ,  John M. White

    IPC: H05H1/00 ,  H01L21/3065 ,  B23H7/14

    CPC classification number: H01L21/02 ,  B44C1/227 ,  C23C16/513 ,  H01J37/32091 ,  H01J37/32577 ,  H01L21/02104

    Abstract: RF power is coupled to one or more RF drive points (50-56) on an electrode (20-28) of a plasma chamber such that the level of RF power coupled to the RF drive points (51-52, 55-56) on the half (61) of the electrode that is closer to the workpiece passageway (12) exceeds the level of RF power coupled to the RF drive points (53-54), if any, on the other half (62) of the electrode. Alternatively, RF power is coupled to one or more RF drive points on an electrode of a plasma chamber such that the weighted mean of the drive point positions is between the center (60) of the electrode and the workpiece passageway. The weighted mean is based on weighting each drive point position by the time-averaged level of RF power coupled to that drive point position. The invention offsets an increase in plasma density that otherwise would exist adjacent the end of the electrode closest to the passageway.

    Abstract translation: RF功率耦合到等离子体室的电极（20-28）上的一个或多个RF驱动点（50-56），使得耦合到RF驱动点（51-52,55-56）的RF功率的电平 更靠近工件通道（12）的电极的一半（61）超过了电极的另一半（62）上耦合到RF驱动点（53-54）的RF功率的水平（如果有的话） 。 或者，RF功率耦合到等离子体室的电极上的一个或多个RF驱动点，使得驱动点位置的加权平均值在电极的中心（60）和工件通道之间。 加权平均值基于通过耦合到该驱动点位置的RF功率的时间平均水平来加权每个驱动点位置。 本发明抵消等离子体密度的增加，否则其将邻近电极最靠近通道的端部存在。

    TIGHTLY FITTED CERAMIC INSULATOR ON LARGE AREA ELECTRODE
    10.
    发明申请
    TIGHTLY FITTED CERAMIC INSULATOR ON LARGE AREA ELECTRODE 有权
    在大面积电极上贴合陶瓷绝缘子

    公开(公告)号：US20110284100A1

    公开(公告)日：2011-11-24

    申请号：US13110184

    申请日：2011-05-18

    Applicant: JOZEF KUDELA ,  JONGHOON BAEK ,  JOHN M. WHITE ,  ROBIN TINER ,  SUHAIL ANWAR ,  GAKU FURUTA

    Inventor： JOZEF KUDELA ,  JONGHOON BAEK ,  JOHN M. WHITE ,  ROBIN TINER ,  SUHAIL ANWAR ,  GAKU FURUTA

    IPC: F16L3/00

    CPC classification number: B05B1/185 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32651 ,  Y10T137/6851

    Abstract: Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.

    Abstract translation: 本发明的实施例通常包括用于喷头组件的屏蔽框架组件和具有屏蔽框架组件的喷头组件，所述屏蔽框架组件包括紧密配合在真空处理室中的喷头周边周围的绝缘体。 在一个实施例中，喷头组件包括气体分配板和环绕气体分布板的周边边缘的多片框架组件。 多件式框架组件允许气体分配板的膨胀而不产生可能导致电弧的间隙。 在其它实施例中，绝缘体被定位成具有集中在位于其中的气体分配板的周边的电场，从而减少电弧电势。

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