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    Large area plasma processing chamber with at-electrode RF matching
    1.
    发明授权
    Large area plasma processing chamber with at-electrode RF matching 有权
    大面积等离子体处理室，具有电极RF匹配

    公开(公告)号：US08691047B2

    公开(公告)日：2014-04-08

    申请号：US12948164

    申请日：2010-11-17

    申请人： Carl A. Sorensen ,  John M. White ,  Jozef Kudela

    发明人： Carl A. Sorensen ,  John M. White ,  Jozef Kudela

    IPC分类号： C23C16/505 ,  H01L21/3065

    CPC分类号： H01J37/32577 ,  H01J37/32091 ,  H01J37/32183

    摘要： A plasma processing system having at-electrode RF matching and a method for processing substrates utilizing the same is provided. In one embodiment, the plasma processing system includes a chamber body, the substrate support, an electrode, a lid assembly and an RF tuning element. A substrate support is disposed in a processing volume defined in the chamber body. The electrode is positioned above the substrate support and below a cover of the lid assembly. The RF tuning element is disposed between the cover and the electrode and is coupled to the electrode.

    摘要翻译： 提供具有电极射频匹配的等离子体处理系统以及利用该等离子体处理基板的方法。 在一个实施例中，等离子体处理系统包括室主体，衬底支撑件，电极，盖组件和RF调谐元件。 基板支撑件设置在室主体中限定的处理空间中。 电极位于衬底支撑件的上方并位于盖子组件的盖子的下面。 RF调谐元件设置在盖和电极之间并且耦合到电极。

    Asymmetrical RF Drive for Electrode of Plasma Chamber
    3.
    发明申请
    Asymmetrical RF Drive for Electrode of Plasma Chamber 有权
    等离子室电极的非对称RF驱动

    公开(公告)号：US20090159423A1

    公开(公告)日：2009-06-25

    申请号：US12343519

    申请日：2008-12-24

    申请人： Jozef Kudela ,  Carl A. Sorensen ,  Soo Young Choi ,  John M. White

    发明人： Jozef Kudela ,  Carl A. Sorensen ,  Soo Young Choi ,  John M. White

    IPC分类号： H05H1/00 ,  H01L21/3065 ,  B23H7/14

    CPC分类号： H01L21/02 ,  B44C1/227 ,  C23C16/513 ,  H01J37/32091 ,  H01J37/32577 ,  H01L21/02104

    摘要： RF power is coupled to one or more RF drive points (50-56) on an electrode (20-28) of a plasma chamber such that the level of RF power coupled to the RF drive points (51-52, 55-56) on the half (61) of the electrode that is closer to the workpiece passageway (12) exceeds the level of RF power coupled to the RF drive points (53-54), if any, on the other half (62) of the electrode. Alternatively, RF power is coupled to one or more RF drive points on an electrode of a plasma chamber such that the weighted mean of the drive point positions is between the center (60) of the electrode and the workpiece passageway. The weighted mean is based on weighting each drive point position by the time-averaged level of RF power coupled to that drive point position. The invention offsets an increase in plasma density that otherwise would exist adjacent the end of the electrode closest to the passageway.

    摘要翻译： RF功率耦合到等离子体室的电极（20-28）上的一个或多个RF驱动点（50-56），使得耦合到RF驱动点（51-52,55-56）的RF功率的电平 更靠近工件通道（12）的电极的一半（61）超过了电极的另一半（62）上耦合到RF驱动点（53-54）的RF功率的水平（如果有的话） 。 或者，RF功率耦合到等离子体室的电极上的一个或多个RF驱动点，使得驱动点位置的加权平均值在电极的中心（60）和工件通道之间。 加权平均值基于通过耦合到该驱动点位置的RF功率的时间平均水平来加权每个驱动点位置。 本发明抵消等离子体密度的增加，否则其将邻近电极最靠近通道的端部存在。

    Guided Wave Applicator with Non-Gaseous Dielectric for Plasma Chamber
    4.
    发明申请
    Guided Wave Applicator with Non-Gaseous Dielectric for Plasma Chamber 有权
    用于等离子室的非气体介质的导波涂敷器

    公开(公告)号：US20130126331A1

    公开(公告)日：2013-05-23

    申请号：US13360652

    申请日：2012-01-27

    申请人： Jozef Kudela ,  Tsutomu Tanaka ,  Carl A. Sorensen ,  Suhail Anwar ,  John M. White

    发明人： Jozef Kudela ,  Tsutomu Tanaka ,  Carl A. Sorensen ,  Suhail Anwar ,  John M. White

    IPC分类号： H01P3/16 ,  H05H1/46 ,  H01L21/02

    CPC分类号： H01P3/16 ,  H01J37/32229 ,  H01L21/02 ,  H01L21/02104 ,  H05H1/46 ,  H05H2001/4622

    摘要： A guided wave applicator comprising two electrically conductive waveguide walls and a waveguide dielectric. The volume of the waveguide dielectric is composed of non-gaseous dielectric material and is positioned between the two waveguide walls. The waveguide dielectric includes first and second longitudinal ends and includes first, second, third and fourth sides extending longitudinally between the two longitudinal ends. The first waveguide wall is positioned so that it covers the first side of the waveguide dielectric, and the second waveguide wall is positioned so that it covers the second side of the waveguide dielectric. In operation, electrical power can be supplied to one or both longitudinal ends of the waveguide dielectric, whereby the power can be coupled to a plasma through the exposed sides of the waveguide dielectric.

    摘要翻译： 导波装置，其包括两个导电波导壁和波导电介质。 波导介质的体积由非气体电介质材料构成，并且位于两个波导壁之间。 波导电介质包括第一和第二纵向端部，并且包括在两个纵向端部之间纵向延伸的第一，第二，第三和第四侧面。 第一波导壁被定位成使得其覆盖波导电介质的第一侧，并且第二波导壁被定位成使得其覆盖波导电介质的第二侧。 在操作中，可以向波导介质的一个或两个纵向端提供电力，由此可以通过波导电介质的暴露侧将功率耦合到等离子体。

    METHOD AND APPARATUS FOR CONTROLLING PLASMA UNIFORMITY
    5.
    发明申请
    METHOD AND APPARATUS FOR CONTROLLING PLASMA UNIFORMITY 审中-公开
    用于控制等离子体均匀性的方法和装置

    公开(公告)号：US20090197015A1

    公开(公告)日：2009-08-06

    申请号：US12344210

    申请日：2008-12-24

    申请人： Jozef Kudela ,  Gaku Furuta ,  Carl A. Sorensen ,  Soo Young Choi ,  John M. White

    发明人： Jozef Kudela ,  Gaku Furuta ,  Carl A. Sorensen ,  Soo Young Choi ,  John M. White

    IPC分类号： C23C16/513

    CPC分类号： H01J37/32623 ,  C23C16/345 ,  C23C16/5096 ,  H01J37/32082

    摘要： Systems, methods, and apparatus involve a plasma processing chamber for depositing a film on a substrate. The plasma processing chamber includes a lid assembly having a ground plate, a backing plate, and a non-uniformity existing between the ground plate and the backing plate. The non-uniformity may interfere with RF wave uniformity and cause an impedance imbalance between portions of the ground plate and backing plate. The non-uniformity may include a structure or a reduced spacing of non-uniform surfaces. A reduced spacing of non-uniform surfaces may exist where a first distance between the ground plate and the backing plate at a first end is different from a second distance between the ground plate and the backing plate at a second end. The structure may be from 2 cm to 10 cm thick, cover from 20% to 50% of the backing plate, and be located away from a discontinuity existing inside the chamber.

    摘要翻译： 系统，方法和装置包括用于在基板上沉积膜的等离子体处理室。 等离子体处理室包括具有接地板，背板和存在于接地板和背板之间的不均匀性的盖组件。 不均匀性可能会干扰RF波均匀性，并导致接地板和背板的部分之间的阻抗不平衡。 不均匀性可以包括非均匀表面的结构或减小的间隔。 存在不均匀表面的减小的间隔，其中在第一端处的接地板和背板之间的第一距离在第二端处不同于接地板和背板之间的第二距离。 该结构可以是2cm至10cm厚，覆盖背板的20％至50％，并且位于远离存在于腔室内的不连续处。

    RF Bus and RF Return Bus for Plasma Chamber Electrode
    8.
    发明申请
    RF Bus and RF Return Bus for Plasma Chamber Electrode 有权
    射频总线和等离子腔室电极的RF返回总线

    公开(公告)号：US20100206483A1

    公开(公告)日：2010-08-19

    申请号：US12705600

    申请日：2010-02-13

    申请人： Carl A. Sorensen ,  Jozef Kudela ,  Robin L. Tiner ,  Suhail Anwar ,  John M. White

    发明人： Carl A. Sorensen ,  Jozef Kudela ,  Robin L. Tiner ,  Suhail Anwar ,  John M. White

    IPC分类号： C23F1/08 ,  C23C16/00 ,  C23C16/50

    CPC分类号： H01J37/32174 ,  H01J37/32091

    摘要： For coupling RF power from an RF input of a plasma chamber to the interior of a plasma chamber, an RF bus conductor is connected between the RF input and a plasma chamber electrode. In one embodiment, an RF return bus conductor is connected to an electrically grounded wall of the chamber, and the RF bus conductor and the RF return bus conductor have respective surfaces that are parallel and face each other. In another embodiment, the RF bus conductor has a transverse cross section having a longest dimension oriented perpendicular to the surface of the plasma chamber electrode that is closest to the RF bus conductor.

    摘要翻译： 为了将来自等离子体室的RF输入的RF功率耦合到等离子体室的内部，RF总线导体连接在RF输入端和等离子体室电极之间。 在一个实施例中，RF返回总线导体连接到室的电接地壁，并且RF总线导体和RF返回总线导体具有彼此平行并相对的相应表面。 在另一个实施例中，RF总线导体具有垂直于等离子体室电极表面的最长尺寸的横截面，其最接近RF总线导体。

    Guided wave applicator with non-gaseous dielectric for plasma chamber
    9.
    发明授权
    Guided wave applicator with non-gaseous dielectric for plasma chamber 有权
    带等离子体室的非气体介质的导波器

    公开(公告)号：US09397380B2

    公开(公告)日：2016-07-19

    申请号：US13360652

    申请日：2012-01-27

    申请人： Jozef Kudela ,  Tsutomu Tanaka ,  Carl A. Sorensen ,  Suhail Anwar ,  John M. White

    发明人： Jozef Kudela ,  Tsutomu Tanaka ,  Carl A. Sorensen ,  Suhail Anwar ,  John M. White

    IPC分类号： H01P3/16 ,  H01L21/02 ,  H05H1/46 ,  H01J37/32

    CPC分类号： H01P3/16 ,  H01J37/32229 ,  H01L21/02 ,  H01L21/02104 ,  H05H1/46 ,  H05H2001/4622

    摘要： A guided wave applicator comprising two electrically conductive waveguide walls and a waveguide dielectric. The volume of the waveguide dielectric is composed of non-gaseous dielectric material and is positioned between the two waveguide walls. The waveguide dielectric includes first and second longitudinal ends and includes first, second, third and fourth sides extending longitudinally between the two longitudinal ends. The first waveguide wall is positioned so that it covers the first side of the waveguide dielectric, and the second waveguide wall is positioned so that it covers the second side of the waveguide dielectric. In operation, electrical power can be supplied to one or both longitudinal ends of the waveguide dielectric, whereby the power can be coupled to a plasma through the exposed sides of the waveguide dielectric.

    摘要翻译： 导波装置，其包括两个导电波导壁和波导电介质。 波导介质的体积由非气体电介质材料构成，并且位于两个波导壁之间。 波导电介质包括第一和第二纵向端部，并且包括在两个纵向端部之间纵向延伸的第一，第二，第三和第四侧面。 第一波导壁被定位成使得其覆盖波导电介质的第一侧，并且第二波导壁被定位成使得其覆盖波导电介质的第二侧。 在操作中，可以向波导介质的一个或两个纵向端提供电力，由此可以通过波导电介质的暴露侧将功率耦合到等离子体。

    LARGE AREA PLASMA PROCESSING CHAMBER WITH AT-ELECTRODE RF MATCHING
    10.
    发明申请
    LARGE AREA PLASMA PROCESSING CHAMBER WITH AT-ELECTRODE RF MATCHING 有权
    大面积等离子体加工室与电极射频匹配

    公开(公告)号：US20110135844A1

    公开(公告)日：2011-06-09

    申请号：US12948164

    申请日：2010-11-17

    申请人： Carl A. Sorensen ,  John M. White ,  Jozef Kudela

    发明人： Carl A. Sorensen ,  John M. White ,  Jozef Kudela

    IPC分类号： C23C16/24 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  C23C16/509 ,  C23C16/52

    CPC分类号： H01J37/32577 ,  H01J37/32091 ,  H01J37/32183

    摘要： A plasma processing system having at-electrode RF matching and a method for processing substrates utilizing the same is provided. In one embodiment, the plasma processing system includes a chamber body, the substrate support, an electrode, a lid assembly and an RF tuning element. A substrate support is disposed in a processing volume defined in the chamber body. The electrode is positioned above the substrate support and below a cover of the lid assembly. The RF tuning element is disposed between the cover and the electrode and is coupled to the electrode.

    摘要翻译： 提供具有电极射频匹配的等离子体处理系统以及利用该等离子体处理基板的方法。 在一个实施例中，等离子体处理系统包括室主体，衬底支撑件，电极，盖组件和RF调谐元件。 基板支撑件设置在室主体中限定的处理空间中。 电极位于衬底支撑件的上方并位于盖子组件的盖子的下面。 RF调谐元件设置在盖和电极之间并且耦合到电极。