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    MAPPING CAVERNOUS NERVES DURING SURGERY
    1.
    发明申请
    MAPPING CAVERNOUS NERVES DURING SURGERY 审中-公开

    公开(公告)号：US20190254545A1

    公开(公告)日：2019-08-22

    申请号：US15901890

    申请日：2018-02-22

    申请人： Chang Wook Jeong ,  Keewon Kim

    发明人： Chang Wook Jeong ,  Keewon Kim

    IPC分类号： A61B5/04 ,  A61B5/0488 ,  A61B5/00

    摘要： Systems and methods for mapping a cavernous nerve near an organ. The system includes: one or more processors; and a memory that is communicatively coupled to the one or more processors and stores one or more sequences of instructions, which when executed by one or more processors causes steps to be performed comprising: applying an excitation signal to an electrode at a tip of an laparoscope, the tip being configured to contact a point on a tissue near an organ; responsive to the excitation signal, measuring a change in a signal from a pair of electrodes configured to be installed on the penis, the change in the signal being associated with an erectile function of the penis; and based on the change in the signal from the pair of electrodes, determining a distance between the point on the tissue and a cavernous nerve near the organ.

    Tool for minimally invasive surgery and method for using the same
    3.
    发明授权
    Tool for minimally invasive surgery and method for using the same 有权
    用于微创手术的工具及其使用方法

    公开(公告)号：US09241727B2

    公开(公告)日：2016-01-26

    申请号：US13058808

    申请日：2009-08-12

    申请人： Chang Wook Jeong

    发明人： Chang Wook Jeong

    IPC分类号： A61B17/00 ,  A61B17/29

    CPC分类号： A61B17/29 ,  A61B17/2909 ,  A61B2017/00738 ,  A61B2017/2901 ,  A61B2017/2906 ,  A61B2017/2908 ,  A61B2017/291 ,  A61B2017/2923 ,  A61B2017/2927

    摘要： A tool for minimally invasive surgery includes a main shaft, a first control shaft and a second control shaft, a first actuating shaft and a second actuating shaft, an adjustment handle, an end effector, a pitch control part, a first yaw control part and a second yaw control part, a pitch actuating part, a first yaw actuating part and a second yaw actuating part, and a pitch cable, a first yaw cable and a second yaw cable.

    摘要翻译： 用于微创手术的工具包括主轴，第一控制轴和第二控制轴，第一致动轴和第二致动轴，调节手柄，末端执行器，俯仰控制部分，第一偏转控制部分和 第二偏转控制部分，俯仰驱动部分，第一偏转驱动部分和第二偏转驱动部分，以及俯仰线缆，第一偏转线缆和第二偏转线缆。

    SURGICAL ROBOT SYSTEM FOR REALIZING SINGLE-PORT SURGERY AND MULTI-PORT SURGERY AND METHOD FOR CONTROLLING SAME
    4.
    发明申请
    SURGICAL ROBOT SYSTEM FOR REALIZING SINGLE-PORT SURGERY AND MULTI-PORT SURGERY AND METHOD FOR CONTROLLING SAME 审中-公开
    用于实现单端口手术和多端口手术的外科手术系统及其控制方法

    公开(公告)号：US20130144307A1

    公开(公告)日：2013-06-06

    申请号：US13699852

    申请日：2011-04-14

    申请人： Chang Wook Jeong ,  Hyung Tae Kim

    发明人： Chang Wook Jeong ,  Hyung Tae Kim

    IPC分类号： A61B19/00

    CPC分类号： A61B34/37 ,  A61B34/30 ,  A61B34/70 ,  A61B90/10 ,  A61B90/11 ,  A61B2017/00477 ,  A61B2017/3466 ,  B25J9/0087

    摘要： Provided is a surgical robot system for realizing single-port surgery and multi-port surgery, the system comprising: an operating device; and a controlling device for electro-mechanically controlling the operating device, wherein the operating device includes an alignment section having a plurality of main robot arms, and a plurality of manipulating sections each having a plurality of auxiliary robot arms, and in the multi-port surgery mode, the plurality of main robot arms and at least a portion of the plurality of auxiliary robot arms are operated so that each surgical tool coupled to each of the plurality of manipulating sections can be placed in correspondence with each of a plurality of incisions, and in the single-port surgery mode, the plurality of main robot arms and at least a portion of the plurality of auxiliary robot arms are operated so that each surgical tool coupled to each of the plurality of manipulating sections can be aligned in correspondence with one incision.

    摘要翻译： 提供了一种用于实现单端口手术和多端口手术的手术机器人系统，该系统包括：操作装置; 以及用于电动机械地控制操作装置的控制装置，其中所述操作装置包括具有多个主机器人手臂的对准部分和多个操作部分，每个操纵部分具有多个辅助机器人手臂，并且在所述多端口 手术模式，多个主机器人臂和多个辅助机器人手臂的至少一部分被操作，使得联接到多个操作部中的每一个的每个外科手术工具可以与多个切口中的每一个对应地放置， 并且在单端口手术模式中，多个主机器人臂和多个辅助机器人手臂的至少一部分被操作，使得联接到多个操纵部中的每一个的每个手术工具可以对准一个 切口。

    TOOL FOR MINIMALLY INVASIVE SURGERY
    5.
    发明申请
    TOOL FOR MINIMALLY INVASIVE SURGERY 审中-公开
    微创手术工具

    公开(公告)号：US20110106145A1

    公开(公告)日：2011-05-05

    申请号：US13001565

    申请日：2009-06-24

    申请人： Chang Wook Jeong

    发明人： Chang Wook Jeong

    IPC分类号： A61B17/28

    CPC分类号： A61B17/29 ,  A61B17/062 ,  A61B18/1402 ,  A61B34/71 ,  A61B34/77 ,  A61B2017/291 ,  A61B2017/2927

    摘要： The present invention relates to an easy-to-control tool for minimally invasive surgery. In accordance with an aspect of the present invention, there is provided a tool for minimally invasive surgery comprising, an elongated shaft having a predetermined length, an adjustment handle manually controllable by a user, a first pitch axis part and a first yaw axis part positioned around one end of the elongated shaft for transferring motions in pitch and yaw directions following the operation of the adjustment handle, a second pitch axis part and a second yaw axis part positioned around the other end of the elongated shaft for operating corresponding to the operations from the first pitch axis part and the first yaw axis part, respectively, and an end effector controllable by the second pitch axis part and the second yaw axis part, wherein the first pitch axis part drives the second pitch axis part by at least one pitch axis actuating cable, and the first yaw axis part drives the second yaw axis part by at least one yaw axis actuating cable.

    摘要翻译： 本发明涉及一种用于微创手术的易于控制的工具。 根据本发明的一个方面，提供了一种用于微创手术的工具，包括：具有预定长度的细长轴，可由用户手动控制的调节手柄，第一俯仰轴部分和第一偏转轴部分， 在所述细长轴的一端附近，用于在调节手柄的操作之后的俯仰和偏航方向上传送运动;第二俯仰轴部分和第二偏转轴部分，其围绕细长轴的另一端定位，用于对应于从 第一俯仰轴部分和第一偏转轴部分以及由第二俯仰轴部分和第二偏转轴部分可控的末端执行器，其中第一俯仰轴部分将第二俯仰轴部分驱动至少一个俯仰轴线 并且第一偏转轴部分通过至少一个偏转轴致动缆索驱动第二偏转轴部分。

    Multiple level cell phase-change memory devices having post-programming operation resistance drift saturation, memory systems employing such devices and methods of reading memory devices
    6.
    发明授权
    Multiple level cell phase-change memory devices having post-programming operation resistance drift saturation, memory systems employing such devices and methods of reading memory devices 有权
    具有后编程操作电阻漂移饱和的多电平单元相变存储器件，采用这种器件的存储器系统以及读取存储器件的方法

    公开(公告)号：US07778079B2

    公开(公告)日：2010-08-17

    申请号：US12079892

    申请日：2008-03-28

    申请人： Chang-Wook Jeong ,  Dae-Hwan Kang ,  Hyeong-Jun Kim ,  Jae-Min Shin ,  Seung-Pil Ko

    发明人： Chang-Wook Jeong ,  Dae-Hwan Kang ,  Hyeong-Jun Kim ,  Jae-Min Shin ,  Seung-Pil Ko

    IPC分类号： G11C16/06

    CPC分类号： G11C11/5678 ,  G11C8/08 ,  G11C13/0004 ,  G11C13/0028 ,  G11C13/0038 ,  G11C13/0061 ,  G11C13/0069 ,  G11C2013/0078

    摘要： In a memory device and in a method of programming the same, a memory device comprises: a plurality of memory cells, each memory cell comprising a resistance-changeable material that has an initial resistance that is determined in response to an applied programming current in a programming operation; and a modification circuit that modifies the resistance of the memory cell following a programming operation of the memory cell to vary the resistance of the memory cell from the initial resistance to a second resistance by applying a saturation current in a saturation operation. Each memory cell is connected to a conduction line of the memory device that is used to apply the programming current to program the resistance of the corresponding memory cell in the programming operation, that is used to apply the saturation current to the corresponding memory cell in the saturation operation and that is used to apply a read current to read the resistance of the corresponding memory cell in a subsequent read operation.

    摘要翻译： 在存储器件和其编程方法中，存储器件包括：多个存储器单元，每个存储器单元包括电阻可变材料，该电阻可变材料具有响应于在一个应用编程电流中确定的初始电阻 编程操作; 以及修改电路，其在存储单元的编程操作之后修改存储单元的电阻，以通过在饱和运算中施加饱和电流来将存储单元的电阻从初始电阻改变为第二电阻。 每个存储单元连接到存储器件的导线，该导线用于施加编程电流以对编程操作中对应的存储单元的电阻进行编程，用于将饱和电流施加到相应的存储单元中 饱和操作，并且用于在随后的读取操作中应用读取电流来读取相应存储器单元的电阻。

    Multiple level cell phase-change memory devices having post-programming operation resistance drift saturation, memory systems employing such devices and methods of reading memory devices
    7.
    发明申请
    Multiple level cell phase-change memory devices having post-programming operation resistance drift saturation, memory systems employing such devices and methods of reading memory devices 有权
    具有后编程操作电阻漂移饱和的多电平单元相变存储器件，采用这种器件的存储器系统以及读取存储器件的方法

    公开(公告)号：US20090016099A1

    公开(公告)日：2009-01-15

    申请号：US12079892

    申请日：2008-03-28

    申请人： Chang-Wook Jeong ,  Dae-Hwan Kang ,  Hyeong-Jun Kim ,  Jae-Min Shin ,  Seung-Pil Ko

    发明人： Chang-Wook Jeong ,  Dae-Hwan Kang ,  Hyeong-Jun Kim ,  Jae-Min Shin ,  Seung-Pil Ko

    IPC分类号： G11C11/00 ,  G11C7/00

    CPC分类号： G11C11/5678 ,  G11C8/08 ,  G11C13/0004 ,  G11C13/0028 ,  G11C13/0038 ,  G11C13/0061 ,  G11C13/0069 ,  G11C2013/0078

    摘要： In a memory device and in a method of programming the same, a memory device comprises: a plurality of memory cells, each memory cell comprising a resistance-changeable material that has an initial resistance that is determined in response to an applied programming current in a programming operation; and a modification circuit that modifies the resistance of the memory cell following a programming operation of the memory cell to vary the resistance of the memory cell from the initial resistance to a second resistance by applying a saturation current in a saturation operation. Each memory cell is connected to a conduction line of the memory device that is used to apply the programming current to program the resistance of the corresponding memory cell in the programming operation, that is used to apply the saturation current to the corresponding memory cell in the saturation operation and that is used to apply a read current to read the resistance of the corresponding memory cell in a subsequent read operation.

    摘要翻译： 在存储器件和其编程方法中，存储器件包括：多个存储器单元，每个存储器单元包括电阻可变材料，该电阻可变材料具有响应于在一个应用编程电流中确定的初始电阻 编程操作; 以及修改电路，其在存储单元的编程操作之后修改存储单元的电阻，以通过在饱和运算中施加饱和电流来将存储单元的电阻从初始电阻改变为第二电阻。 每个存储单元连接到存储器件的导线，该导线用于施加编程电流以对编程操作中对应的存储单元的电阻进行编程，用于将饱和电流施加到相应的存储单元中 饱和操作，并且用于在随后的读取操作中应用读取电流来读取相应存储器单元的电阻。