摘要:
An interdigitated solar cell may provide a heterojunction or tunnel junction emitter and base contacts that comprise laser processed regions that electrically couple the base contact to a substrate. Methods for manufacturing such solar cells to provide interdigitated back contacts may utilize laser processing to form laser processed regions that are isolated from the emitter. Laser processing may include laser-doping, laser-firing, laser-transfer, laser-transfer doping, laser contacting, and/or gas immersion laser doping.
摘要:
A solar cell structure may provide a front surface that may include a front passivation layer and front anti-reflective layer. The solar cell structure may provide both contacts on a rear surface. In some cases, the rear surface may optionally provide passivation, doped, and/or transparent conductive oxide layers. The rear surface also provides a multilayer foil assembly (MFA). The MFA provides a first metal foil in electrical communication with doped regions of the rear surface of the substrate, such as base or emitter regions. The MFA may also provide a second metal foil that is spaced apart from the first metal foil by a dielectric layer. The first metal foil and/or the dielectric layer may include openings through the entirety of these layers, and these openings may be utilized to form laser fired contacts electrically coupled to the second metal foil, which is electrically isolated from the first metal foil. In some embodiments, it may be desirable for the second foil to provide openings as well, which can be utilized to form laser fired contacts for the first metal foil.
摘要:
An interdigitated solar cell may provide a heterojunction or tunnel junction emitter and base contacts that comprise laser processed regions that electrically couple the base contact to a substrate. Methods for manufacturing such solar cells to provide interdigitated back contacts may utilize laser processing to form laser processed regions that are isolated from the emitter. Laser processing may include laser-doping, laser-firing, laser-transfer, laser-transfer doping, laser contacting, and/or gas immersion laser doping.
摘要:
A solar cell structure may provide a front surface that may include a front passivation layer and front anti-reflective layer. The solar cell structure may provide both contacts on a rear surface. In some cases, the rear surface may optionally provide passivation, doped, and/or transparent conductive oxide layers. The rear surface also provides a multilayer foil assembly (MFA). The MFA provides a first metal foil in electrical communication with doped regions of the rear surface of the substrate, such as base or emitter regions. The MFA may also provide a second metal foil that is spaced apart from the first metal foil by a dielectric layer. The first metal foil and/or the dielectric layer may include openings through the entirety of these layers, and these openings may be utilized to form laser fired contacts electrically coupled to the second metal foil, which is electrically isolated from the first metal foil. In some embodiments, it may be desirable for the second foil to provide openings as well, which can be utilized to form laser fired contacts for the first metal foil.
摘要:
A laser processing system can be utilized to produce high-performance interdigitated back contact (IBC) solar cells. The laser processing system can be utilized to ablate, transfer material, and/or laser-dope or laser fire contacts. Laser ablation can be utilized to remove and pattern openings in a passivated or emitter layer. Laser transferring may then be utilized to transfer dopant and/or contact materials to the patterned openings, thereby forming an interdigitated finger pattern. The laser processing system may also be utilized to plate a conductive material on top of the transferred dopant or contact materials.
摘要:
An improved facility for supporting the main landing gear assembly and the nose wheel assembly of a commercial jetliner is quickly adjustable so as to be able to accommodate different aircraft models. The facility includes a nose wheel lift platform system that includes an elongated pit, a support platform that is supported in the pit and is adapted to support an aircraft's nose wheel assembly, and a number of spacer blocks for covering portions of the elongated pit that are not covered by the support platform. The support platform is mounted on a trolley which is equipped to move the support platform up or down as well as lengthwise along the pit. The spacer blocks are slidable along the upper opening of the pit. By moving the trolley beneath a spacer block and engaging the spacer block with the support platform, an operator can move the spacer blocks with the support platform. Accordingly, an operator wishing to reposition the support platform to accommodate a certain type of aircraft may quickly and conveniently reposition the spacer blocks to expose the intended new location of the support platform, and cover the position that was left exposed, prior to moving the support platform to its new location.
摘要:
A speaker system including a frusto-conical diaphragm, and a phase plug mounted within the volume formed by the diaphragm, the phase plug including a pair of substantially diametric open slots extending across the diaphragm and through the phase plug, with each of the slots having substantially rectangular cross sections transverse to the axis of the diaphragm.
摘要:
A first layer of semiconductor device is of doped amorphous silicon prepared by a glow discharge in a mixture of silane and a doping gas. The first layer is on a substrate having good electrical properties. On the first layer and spaced from the substrate is a second layer of amorphous silicon prepared by a glow discharge in silane. On the second layer opposite the first layer is a metallic film forming a surface barrier junction therebetween, i.e. a Schottky barrier. The first layer is doped so as to make an ohmic contact with the substrate. Preferably the doping concentration of the first layer is graded so the dopant concentration is maximum at the interface of the first layer and the substrate. In a second embodiment of the Schottky barrier semiconductor device an intermediate layer is between and contiguous to both the first layer and the substrate. The intermediate layer facilitates in making ohmic contact between the amorphous silicon and the substrate. Annealing and heat treating steps are performed in the fabrication of the Schottky barrier device to increase device efficiency.
摘要:
A filter element includes a first, outer tubular construction of filter media defining a first open filter interior; a second, inner tuber construction of filter media defining a second open filter interior; the second construction of filter media being located within the first open filter interior and being radially spaced from the first construction of filter media; and the second open filter interior defines an unfiltered fluid channel. A plastic inner liner is within the first open filter interior to support the first construction of filter media. A plastic outer liner is within the first open filter interior to support the second construction of filter media. A filtered fluid channel is defined between the inner liner and the outer liner. A brace arrangement is between the first and second tubular constructions. The brace arrangement can include a spring, a plurality of gussets, or a solid spacer.