公开(公告)号：US20130280633A1

公开(公告)日：2013-10-24

申请号：US13976632

申请日：2011-12-28

Applicant: Seung Goo Kim ,  Choongmo Yang ,  Do Hyeong Kim ,  Joong Hwan Jun

Inventor： Seung Goo Kim ,  Choongmo Yang ,  Do Hyeong Kim ,  Joong Hwan Jun

IPC: H01M8/04

CPC classification number: H01M8/04201 ,  H01M8/04089 ,  H01M8/1213 ,  H01M8/241 ,  H01M8/2425 ,  H01M8/2432 ,  H01M8/2483

Abstract: Provided is a fuel cell system in which a plurality of electricity generating units each including a unit cell in which an anode electrode and a cathode electrode are formed on both sides of an electrolyte film to use an electrochemical reaction of a fuel and an oxidizing agent to generate an electrical energy and a pair of separating plates which are disposed on both surfaces of the unit cell and have passages through which a fuel and an oxidizing agent are supplied to the anode electrode and the cathode electrode are laminated in which the electricity generating unit has a structure where a fuel flowing direction and/or a flowing direction of the fuel or the oxidizing agent are different between neighboring electricity generating units.

Abstract translation: 提供一种燃料电池系统，其中多个发电单元各自包括在电解质膜的两侧上形成阳极电极和阴极的单元电池，以使用燃料和氧化剂的电化学反应 产生电能和一对分隔板，它们设置在单元电池的两个表面上，并且具有通向该阳极电极和阴极电极的燃料和氧化剂供给的通道，发电单元具有 在相邻的发电单元之间燃料或氧化剂的燃料流动方向和/或流动方向不同的结构。

公开(公告)号：US07956453B1

公开(公告)日：2011-06-07

申请号：US12015428

申请日：2008-01-16

Applicant: Do Hyeong Kim ,  Bong Chan Kim ,  Yoon Joo Kim ,  Ji Young Chung

Inventor： Do Hyeong Kim ,  Bong Chan Kim ,  Yoon Joo Kim ,  Ji Young Chung

IPC: H01L23/48 ,  H01L23/04

CPC classification number: H01L23/5389 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/481 ,  H01L23/49816 ,  H01L24/24 ,  H01L24/25 ,  H01L24/45 ,  H01L24/48 ,  H01L25/50 ,  H01L2224/05553 ,  H01L2224/24051 ,  H01L2224/24226 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2225/0651 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

Abstract: In accordance with the present invention, there is provided multiple embodiments of a semiconductor package including one or more semiconductor dies which are electrically connected to an underlying substrate through the use of a conductive pattern which is at least partially embedded in a patterning layer of the package. In a basic embodiment of the present invention, the semiconductor package comprises a substrate having a conductive pattern disposed thereon. Electrically connected to the conductive pattern of the substrate is at least one semiconductor die. The semiconductor die and the substrate are at least partially encapsulated by a patterning layer. Embedded in the patterning layer is a wiring pattern which electrically connects the semiconductor die to the conductive pattern. A portion of the wiring pattern is exposed in the patterning layer.

Abstract translation: 根据本发明，提供了包括一个或多个半导体管芯的半导体封装的多个实施例，所述半导体管芯通过使用至少部分地嵌入在封装的图案化层中的导电图案电连接到下面的衬底 。 在本发明的基本实施例中，半导体封装包括其上布置有导电图案的衬底。 电连接到衬底的导电图案是至少一个半导体管芯。 半导体管芯和衬底被图案化层至少部分地封装。 嵌入在图案化层中的是将半导体管芯与导电图案电连接的布线图案。 布线图案的一部分在图案形成层中露出。

公开(公告)号：US20090183833A1

公开(公告)日：2009-07-23

申请号：US12414443

申请日：2009-03-30

Applicant: Do-Hyeong KIM

Inventor： Do-Hyeong KIM

IPC: C23F1/08 ,  C23C16/54

CPC classification number: C23C16/507 ,  C23C16/452 ,  H01J37/32357 ,  H01J37/32495 ,  H01J37/32623

Abstract: A plasma processing apparatus comprising: a process chamber for defining a plasma processing space in which a substrate holder for mounting a substrate thereon is installed; a plasma chamber in communication with an upper portion of the process chamber to generate and inject plasma into the plasma processing space such that the substrate is processed; a screen interposed between the process chamber and the plasma chamber to block plasma ions from being injected from the plasma chamber; and an ion trap for protecting the surface of the substrate from damage due to the injected plasma ion.

Abstract translation: 一种等离子体处理装置，包括：用于限定等离子体处理空间的处理室，其中安装用于安装其上的基板的基板保持器; 等离子体室，与处理室的上部连通，以产生等离子体并将等离子体注入到等离子体处理空间中，使得处理基板; 介于所述处理室和所述等离子体室之间以屏蔽等离子体离子从所述等离子体室注入的屏幕; 以及用于保护衬底的表面的离子阱不会由于注入的等离子体离子而损坏。

公开(公告)号：US20050061447A1

公开(公告)日：2005-03-24

申请号：US10945779

申请日：2004-09-20

Applicant: Yong-Dae Kim ,  Soon-Ho Yon ,  Do-Hyeong Kim ,  Doo-Won Lee

Inventor： Yong-Dae Kim ,  Soon-Ho Yon ,  Do-Hyeong Kim ,  Doo-Won Lee

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683 ,  C23F1/00

CPC classification number: H01J37/32623 ,  H01J37/32642 ,  H01L21/6831

Abstract: A plasma etch apparatus is disclosed. The plasma etch apparatus includes an electrostatic chuck for loading a wafer; an insulation portion surrounding the electrostatic chuck; and a focus ring disposed on the electrostatic chuck and the insulation portion. The focus ring has a concave-convex configuration.

Abstract translation: 公开了一种等离子体蚀刻装置。 等离子体蚀刻装置包括用于加载晶片的静电卡盘; 围绕静电卡盘的绝缘部分; 以及设置在静电卡盘和绝缘部分上的聚焦环。 聚焦环具有凹凸形状。

公开(公告)号：US20120282394A1

公开(公告)日：2012-11-08

申请号：US13519699

申请日：2010-12-28

Applicant: Sang-Moo Han ,  Do-Hyeong Kim ,  Joong-Hwan Jun

Inventor： Sang-Moo Han ,  Do-Hyeong Kim ,  Joong-Hwan Jun

IPC: H01B1/08 ,  H01M2/14 ,  B82Y30/00

CPC classification number: H01M8/0217 ,  B82Y30/00 ,  C01G45/12 ,  C01G51/006 ,  C01G51/70 ,  C01G53/006 ,  C01G53/70 ,  C01P2002/34 ,  C01P2004/03 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/82 ,  C01P2004/84 ,  C01P2006/40 ,  C04B35/01 ,  C04B35/50 ,  C04B35/624 ,  C04B35/62685 ,  C04B35/62805 ,  C04B35/62826 ,  C04B35/62892 ,  C04B35/64 ,  C04B2235/3208 ,  C04B2235/3227 ,  C04B2235/3241 ,  C04B2235/3275 ,  C04B2235/3281 ,  C04B2235/443 ,  C04B2235/449 ,  C04B2235/528 ,  C04B2235/5436 ,  C04B2235/5454 ,  C04B2235/768 ,  C04B2235/9615 ,  H01M4/8657 ,  H01M4/9033 ,  H01M8/0236 ,  H01M2008/1293 ,  Y02P70/56

Abstract: Provided is a composite ceramic material for a fuel cell and a method for manufacturing the same. The composite ceramic material for the fuel cell forms a cored structure where perovskite ceramic particles having a small particle diameter surround lanthanum cobaltite particles having a large particle diameter, and lanthanum cobaltite is added as a starting material in a process of synthesizing the perovskite ceramic particles to be synthesized. The composite ceramic material for the fuel cell described herein improves an electric connection characteristic between a separation plate and a polar plate of the fuel cell, and is chemically and mechanically stable.

Abstract translation: 本发明提供一种燃料电池用复合陶瓷材料及其制造方法。 用于燃料电池的复合陶瓷材料形成核心结构，其中具有小粒径的钙钛矿陶瓷颗粒包围具有大粒径的钴酸镧粒子，并且在合成钙钛矿陶瓷颗粒的过程中添加钴酸镧作为原料， 被合成。 用于本文所述的燃料电池用复合陶瓷材料改善了分离板和燃料电池的极板之间的电连接特性，并且化学和机械稳定。

公开(公告)号：US08729710B1

公开(公告)日：2014-05-20

申请号：US13094728

申请日：2011-04-26

Applicant: Do Hyeong Kim ,  Bong Chan Kim ,  Yoon Joo Kim ,  Ji Young Chung

Inventor： Do Hyeong Kim ,  Bong Chan Kim ,  Yoon Joo Kim ,  Ji Young Chung

IPC: H01L23/48

CPC classification number: H01L23/5389 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/481 ,  H01L23/49816 ,  H01L24/24 ,  H01L24/25 ,  H01L24/45 ,  H01L24/48 ,  H01L25/50 ,  H01L2224/05553 ,  H01L2224/24051 ,  H01L2224/24226 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2225/0651 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

Abstract: In accordance with the present invention, there is provided multiple embodiments of a semiconductor package including one or more semiconductor dies which are electrically connected to an underlying substrate through the use of a conductive pattern which is at least partially embedded in a patterning layer of the package. In a basic embodiment of the present invention, the semiconductor package comprises a substrate having a conductive pattern disposed thereon. Electrically connected to the conductive pattern of the substrate is at least one semiconductor die. The semiconductor die and the substrate are at least partially encapsulated by a patterning layer. Embedded in the patterning layer is a wiring pattern which electrically connects the semiconductor die to the conductive pattern. A portion of the wiring pattern is exposed in the patterning layer.

Abstract translation: 根据本发明，提供了包括一个或多个半导体管芯的半导体封装的多个实施例，所述半导体管芯通过使用至少部分地嵌入在封装的图案化层中的导电图案电连接到下面的衬底 。 在本发明的基本实施例中，半导体封装包括其上布置有导电图案的衬底。 电连接到衬底的导电图案是至少一个半导体管芯。 半导体管芯和衬底被图案化层至少部分地封装。 嵌入在图案化层中的是将半导体管芯与导电图案电连接的布线图案。 布线图案的一部分在图案形成层中露出。

公开(公告)号：US20060102286A1

公开(公告)日：2006-05-18

申请号：US11270704

申请日：2005-11-08

Applicant: Do-Hyeong Kim

Inventor： Do-Hyeong Kim

IPC: C23F1/00 ,  C23C16/00

CPC classification number: C23C16/507 ,  C23C16/452 ,  H01J37/32357 ,  H01J37/32495 ,  H01J37/32623

Abstract: A plasma processing apparatus comprising: a process chamber for defining a plasma processing space in which a substrate holder for mounting a substrate thereon is installed; a plasma chamber in communication with an upper portion of the process chamber to generate and inject plasma into the plasma processing space such that the substrate is processed; a screen interposed between the process chamber and the plasma chamber to block plasma ions from being injected from the plasma chamber; and an ion trap for protecting the surface of the substrate from damage due to the injected plasma ion.

Abstract translation: 一种等离子体处理装置，包括：用于限定等离子体处理空间的处理室，其中安装用于安装其上的基板的基板保持器; 等离子体室，与处理室的上部连通，以产生等离子体并将等离子体注入到等离子体处理空间中，使得处理基板; 介于所述处理室和所述等离子体室之间以屏蔽等离子体离子从所述等离子体室注入的屏幕; 以及用于保护衬底的表面的离子阱不会由于注入的等离子体离子而损坏。

公开(公告)号：US06236903B1

公开(公告)日：2001-05-22

申请号：US09160093

申请日：1998-09-25

Applicant: Do-hyeong Kim ,  Tae-ryong Kim ,  Byeung-wook Choi ,  Kwang-jin Jung

Inventor： Do-hyeong Kim ,  Tae-ryong Kim ,  Byeung-wook Choi ,  Kwang-jin Jung

IPC: G06F1900

CPC classification number: H01L21/67294 ,  G06K9/00 ,  Y10S414/136

Abstract: A multiple reaction chamber system includes a transfer chamber, a load lock chamber connected to the transfer chamber, and a plurality of reaction chambers connected to the transfer chamber. An alignment chamber is connected to the transfer chamber, disposed along a path of wafer transfer from the load lock chamber to the plurality of reaction chambers, and includes a wafer aligner. A wafer recognition, disposed along a post-aligner portion of the path of wafer transfer system, recognizes an identification code of an individual wafer. A controlling system is in data communication with the wafer recognition system for selecting a selected chamber of the plurality of reaction chambers into which the individual wafer is to be transferred. Because individual wafers can be associated with each reaction chamber, a defective reaction chamber can be identified immediately and its use discontinued so that unproductive operations can be eliminated.

Abstract translation: 多反应室系统包括传送室，连接到传送室的负载锁定室和连接到传送室的多个反应室。 对准室连接到传送室，沿着晶片从负载锁定室传递到多个反应室的路径设置，并且包括晶片对准器。 沿着晶片传送系统的路径的对准后部分布置的晶片识别识别单个晶片的识别码。 控制系统与晶片识别系统进行数据通信，用于选择要转移单个晶片的多个反应室的选定室。 因为单个晶片可以与每个反应室相关联，所以可以立即识别有缺陷的反应室，并且其使用停止，从而可以消除非生产性操作。

公开(公告)号：US5814822A

公开(公告)日：1998-09-29

申请号：US771772

申请日：1996-12-20

Applicant: Sang-geun Oh ,  Sang-young Moon ,  Jeong-gon Kim ,  Do-hyeong Kim

Inventor： Sang-geun Oh ,  Sang-young Moon ,  Jeong-gon Kim ,  Do-hyeong Kim

IPC: H01J37/05 ,  H01J37/317 ,  H01L21/265 ,  H01J49/42

CPC classification number: H01J37/3171 ,  H01J2237/057

Abstract: An ion implanter and an ion implanting method compatible for both positive and negative ions. The ion implanter has an ion extractor and a mass analyzer for deflecting ions, having one of a positive or negative charged state, in a predetermined direction regardless of the charged state of the ions. A polarity converter changes the flux direction of a magnetic field in the mass analyzer according to the charged state of the ions. Thus, shallow and deep impurity layers can be formed into wafers without changing ion implanters, such that BF.sup.+ as well as B.sup.+ or P.sup.+ can be implanted with a single ion implanter. As a result, the product yield of a semiconductor device can be improved.

Abstract translation: 离子注入机和离子注入方法兼容正离子和负离子。 离子注入机具有离子提取器和质量分析器，用于偏转具有正或负带电状态之一的离子在预定方向上，而不管离子的带电状态如何。 极性转换器根据离子的充电状态来改变质量分析器中的磁场的磁通方向。 因此，可以在不改变离子注入机的情况下将浅的和深的杂质层形成晶片，使得可以用单个离子注入机注入BF +以及B +或P +。 结果，可以提高半导体器件的产品产量。