公开(公告)号：US09041029B2

公开(公告)日：2015-05-26

申请号：US13340627

申请日：2011-12-29

申请人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： H01L33/22 ,  H01L33/44 ,  B82Y20/00 ,  H01L33/00

CPC分类号： B82Y20/00 ,  H01L33/0095 ,  H01L33/22

摘要： A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes a first surface and a second surface, and the second surface is a light emitting surface of the LED. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked on the first surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on at least one surface of the substrate and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.

摘要翻译： 提供了包括基板，第一半导体层，有源层和第二半导体层的发光二极管。 基板包括第一表面和第二表面，并且第二表面是LED的发光表面。 第一半导体层，有源层和第二半导体层以该顺序堆叠在第一表面上。 第一电极与第一半导体层电连接。 第二电极与第二半导体层电连接。 多个三维纳米结构位于基板的至少一个表面上并排排列，并且每个三维纳米结构的横截面为M形。

公开(公告)号：US09029889B2

公开(公告)日：2015-05-12

申请号：US13340661

申请日：2011-12-29

申请人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： H01L33/22 ,  H01L33/44 ,  H01L33/38 ,  H01L33/40

CPC分类号： H01L33/22 ,  H01L33/382 ,  H01L33/405

摘要： A light emitting diode is provided. The light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer, and a surface of the second semiconductor layer which is away from the active layer is a light extraction surface of the LED. The first electrode is electrically connected with the first semiconductor layer. The second electrode electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are formed on the light extraction surface of LED, the number of the three-dimensional nano-structures are aligned side by side, and a cross section of each three-dimensional nano-structure is M-shaped.

摘要翻译： 提供发光二极管。 发光二极管包括第一半导体层，有源层，第二半导体层，第一电极和第二电极。 有源层夹在第一半导体层和第二半导体层之间，并且远离有源层的第二半导体层的表面是LED的光提取表面。 第一电极与第一半导体层电连接。 第二电极与第二半导体层电连接。 在LED的光提取面上形成多个三维纳米结构，三维纳米结构的数量并排排列，每个三维纳米结构的截面为M- 成形。

公开(公告)号：US08796289B2

公开(公告)日：2014-08-05

申请号：US13552876

申请日：2012-07-19

申请人： Gui-Dong Zhu ,  Jane Gong ,  Andrew S. Judd ,  Virajkumar B. Ghandi ,  Alexander R. Shoemaker ,  Thomas D. Penning ,  Michael R. Michaelides ,  Chunqui Lai ,  Keith W. Woods

发明人： Gui-Dong Zhu ,  Jane Gong ,  Andrew S. Judd ,  Virajkumar B. Ghandi ,  Alexander R. Shoemaker ,  Thomas D. Penning ,  Michael R. Michaelides ,  Chunqui Lai ,  Keith W. Woods

IPC分类号： A01N43/90 ,  A61K31/519 ,  C07D487/00

CPC分类号： C07D487/04

摘要： The present invention relates to compounds of formula (I) or pharmaceutical acceptable salts, wherein B, R1, R2, R4, and m are defined in the description. The present invention relates also to compositions containing said compounds which are useful for inhibiting kinases such as wee-1 and methods of treating diseases such as cancer.

摘要翻译： 本发明涉及式（I）化合物或其药学上可接受的盐，其中B，R 1，R 2，R 4和m在说明书中定义。 本发明还涉及含有所述化合物的组合物，其可用于抑制诸如wee-1的激酶和治疗诸如癌症的疾病的方法。

公开(公告)号：US08785955B2

公开(公告)日：2014-07-22

申请号：US13477273

申请日：2012-05-22

申请人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Shou-Shan Fan

发明人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Shou-Shan Fan

IPC分类号： H01L33/00

CPC分类号： H01L33/24 ,  H01L33/32

摘要： A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.

摘要翻译： 提供了包括基板，第一半导体层，有源层和第二半导体层的发光二极管。 第一半导体层包括第一表面和第二表面，并且第一表面连接到基板。 有源层和第二半导体层以该顺序堆叠在第二表面上，并且第二半导体层远离有源层的表面被配置为发光表面。 第一电极与第一半导体层电连接。 第二电极与第二半导体层电连接。 多个三维纳米结构位于第一半导体层的第一表面的表面上并排排列，并且每个三维纳米结构的横截面是M形的。

公开(公告)号：US08785221B2

公开(公告)日：2014-07-22

申请号：US13479234

申请日：2012-05-23

申请人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Shou-Shan Fan

发明人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Shou-Shan Fan

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/0079 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L33/005 ,  H01L33/24

摘要： A method for making light emitting diode is provided. The method includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer.

摘要翻译： 提供一种制造发光二极管的方法。 该方法包括以下步骤。 提供基板。 在衬底的表面上生长第一半导体层。 图案化的掩模层位于第一半导体层的表面上，并且图案化掩模层包括多个棒状突出结构，在每个两个相邻的突出结构之间限定狭缝以暴露第一半导体层的一部分。 暴露的第一半导体层被蚀刻以形成突出的一对。 通过去除图案化掩模层形成多个三维纳米结构。 在三维纳米结构的数量上依次生长有源层和第二半导体层。 第一电极与第一半导体层电连接。 第二电极与第二半导体层电连接。

公开(公告)号：US08759857B2

公开(公告)日：2014-06-24

申请号：US13479223

申请日：2012-05-23

申请人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Shou-Shan Fan

发明人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Shou-Shan Fan

IPC分类号： H01L33/00

CPC分类号： H01L33/24 ,  H01L33/20 ,  H01L33/382

摘要： A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. A surface of the substrate away from the active layer is configured as the light emitting surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with and covers a surface of the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structure is M-shaped.

摘要翻译： 提供了包括基板，第一半导体层，有源层和第二半导体层的发光二极管。 远离有源层的衬底的表面被配置为发光表面。 第一半导体层包括第一表面和第二表面，并且第一表面连接到基板。 有源层和第二半导体层以该顺序堆叠在第二表面上。 第一电极与第一半导体层电连接。 第二电极与第二半导体层的表面电连接并覆盖其表面。 多个三维纳米结构位于第一半导体层和发光面的第一表面的表面上，并且每个三维纳米结构的横截面为M形。

公开(公告)号：US08624285B2

公开(公告)日：2014-01-07

申请号：US13479225

申请日：2012-05-23

申请人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Shou-Shan Fan

发明人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Shou-Shan Fan

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/38 ,  H01L33/382

摘要： A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode is electrically connected with and covers the first surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structure is M-shaped.

摘要翻译： 提供了包括第一半导体层，有源层和第二半导体层的发光二极管。 第一半导体层包括第一表面和第二表面。 有源层和第二半导体层以该顺序堆叠在第二表面上，并且第二半导体层远离有源层的表面被配置为发光表面。 第一电极与第一半导体层的第一表面电连接并覆盖第一半导体层的第一表面。 第二电极与第二半导体层电连接。 多个三维纳米结构位于第一半导体层和发光面的第一表面的表面上，并且每个三维纳米结构的横截面为M形。

公开(公告)号：US08550792B2

公开(公告)日：2013-10-08

申请号：US12493885

申请日：2009-06-29

申请人： Lyudmila Mikhaylovna Solovyeva ,  Kyle S. Jansson ,  Alaa AbdelAzim Elmoursi ,  Dong Zhu ,  Robert Milner ,  Earl Eugene Daugherty ,  Clifton Baxter Higdon ,  Kamel Abdel-Khalik Elagamy ,  Aaron Michael Hicks

发明人： Lyudmila Mikhaylovna Solovyeva ,  Kyle S. Jansson ,  Alaa AbdelAzim Elmoursi ,  Dong Zhu ,  Robert Milner ,  Earl Eugene Daugherty ,  Clifton Baxter Higdon ,  Kamel Abdel-Khalik Elagamy ,  Aaron Michael Hicks

IPC分类号： F04B49/00

CPC分类号： C23C14/06 ,  C23C14/024 ,  C23C14/027 ,  C23C14/0605 ,  C23C14/3414 ,  C23C14/352 ,  F04C2/344 ,  F04C15/0088 ,  F04C2230/91

摘要： A device configured for converting energy includes a first surface, a second surface configured for moving with respect to the first surface during operation of the device, and a coating disposed on at least one of the first surface and the second surface. The coating includes a first layer of a ceramic alloy represented by the general formula AlMgB14—X, wherein X is present in an amount of from 0 to 70 parts by weight based on 100 parts by weight of the ceramic alloy and is a doping agent selected from the group of Group IV elements and borides and nitrides thereof, and a second layer disposed on the first layer and including carbon in a gradient concentration. The coating has a hardness of from 10 to 20 GPa and a coefficient of friction of less than or equal to 0.12.

摘要翻译： 构造成用于转换能量的装置包括第一表面，被配置为在装置的操作期间相对于第一表面移动的第二表面以及设置在第一表面和第二表面中的至少一个上的涂层。 涂层包括由通式AlMgB14-X表示的陶瓷合金的第一层，其中X以0至70重量份的量存在，基于100重量份的陶瓷合金，并且是选择的掺杂剂 由第IV族元素和硼化物和氮化物组成的第一层和设置在第一层上并包含梯度浓度的碳的第二层。 该涂层具有10至20GPa的硬度和小于或等于0.12的摩擦系数。

公开(公告)号：US20130183009A1

公开(公告)日：2013-07-18

申请号：US13740476

申请日：2013-01-14

申请人： JIN-HUA MENG ,  YA-DONG ZHU ,  YUN-CHENG HOU ,  JOHN CHOW

发明人： JIN-HUA MENG ,  YA-DONG ZHU ,  YUN-CHENG HOU ,  JOHN CHOW

IPC分类号： G02B6/42

CPC分类号： G02B6/42 ,  G02B6/3885 ,  G02B6/3897 ,  G02B6/4214 ,  G02B6/4261 ,  G02B6/4284 ,  G02B6/4292

摘要： An optical-electrical connector assembly comprises a housing, a printed circuit board received in the housing and including a number of converting elements, a lens member, a ferrule aligned with the lens member and having a resisting portion, an integrated securing member, a coiled spring received in the securing member, and an optical cable having a number of optical fibers. The ferrule has a first engaging portion and a second engaging portion engaged with the housing. The coiled spring is compressed between the resisting portion and the first engaging portion.

摘要翻译： 光电连接器组件包括壳体，容纳在壳体中并包括多个转换元件的印刷电路板，透镜构件，与透镜构件对准并具有阻挡部分的套圈，集成固定构件，卷绕 弹簧被容纳在固定构件中，并且具有多根光纤的光缆。 套圈具有与壳体接合的第一接合部分和第二接合部分。 螺旋弹簧在阻力部分和第一接合部分之间被压缩。

公开(公告)号：US08466150B2

公开(公告)日：2013-06-18

申请号：US12138168

申请日：2008-06-12

申请人： Virajkumar B. Gandhi ,  Vincent L. Giranda ,  Jianchun Gong ,  Thomas D Penning ,  Gui-Dong Zhu

发明人： Virajkumar B. Gandhi ,  Vincent L. Giranda ,  Jianchun Gong ,  Thomas D Penning ,  Gui-Dong Zhu

IPC分类号： A01N43/58 ,  A01N43/60 ,  A61K31/50 ,  A61K31/495

CPC分类号： A61K31/502 ,  A61K31/551 ,  A61K45/06 ,  A61N5/10 ,  C07D237/32 ,  C07D401/12 ,  C07D401/14 ,  C07D403/10 ,  C07D403/12 ,  C07D403/14

摘要： Inhibitors of poly(ADP-ribose)polymerase, ways to make them and methods of treating patients using them are disclosed.

摘要翻译： 公开了聚（ADP-核糖）聚合酶的抑制剂，其制备方法和使用它们治疗患者的方法。