公开(公告)号：US08818265B2

公开(公告)日：2014-08-26

申请号：US13454815

申请日：2012-04-24

申请人： Peter Gerard Steeneken ,  Maarten Jacobus Swanenberg ,  Henk Boezen ,  Gerhard Koops ,  Frans Bontekoe ,  Reinout Woltjer

发明人： Peter Gerard Steeneken ,  Maarten Jacobus Swanenberg ,  Henk Boezen ,  Gerhard Koops ,  Frans Bontekoe ,  Reinout Woltjer

IPC分类号： H04B5/00 ,  H01L21/70 ,  H01L29/00 ,  H01L21/02 ,  H03K17/00 ,  H04B1/44

CPC分类号： H04B1/44 ,  H03K17/00

摘要： One or more embodiments provide circuitry for isolation and communication of signals between circuits operating in different voltage domains using capacitive coupling. The embodiments utilize capacitive structures having increased breakdown voltage in comparison to previous parallel plate implementations. The capacitive isolation is provided by parallel plate capacitive structures, each implemented to have parallel plates of different horizontal sizes. Due to the difference in horizontal size, edges of the parallel plates, where electric fields are the strongest, are laterally offset from the region where the parallel plates overlap. As a result, breakdown voltage between the parallel plates is increased.

摘要翻译： 一个或多个实施例提供用于使用电容耦合在不同电压域中工作的电路之间的信号的隔离和通信的电路。 与先前的平行板实现相比，这些实施例利用具有增加的击穿电压的电容结构。 电容隔离由平行板电容结构提供，每个电容结构被实现为具有不同水平尺寸的平行板。 由于水平尺寸的差异，电场最强的平行板的边缘与平行板重叠的区域横向偏移。 结果，平行板之间的击穿电压增加。

公开(公告)号：US08569934B2

公开(公告)日：2013-10-29

申请号：US12977769

申请日：2010-12-23

申请人： Gerhard Koops ,  Jozef Thomas Martinus van Beek

发明人： Gerhard Koops ,  Jozef Thomas Martinus van Beek

IPC分类号： H01L41/053

CPC分类号： H01L41/332 ,  H03H3/0072 ,  H03H9/02259 ,  Y10S977/762 ,  Y10T29/42

摘要： A piezo-resistive MEMS resonator comprising an anchor, a resonator mounted on the anchor, an actuator mounted to apply an electrostatic force on the resonator and a piezo-resistive read-out means comprising a nanowire coupled to the resonator.

公开(公告)号：US20120213466A1

公开(公告)日：2012-08-23

申请号：US13029951

申请日：2011-02-17

申请人： Dusan Golubovic ,  Gerhard Koops ,  Tony Vanhoucke ,  Rob Van Dalen

发明人： Dusan Golubovic ,  Gerhard Koops ,  Tony Vanhoucke ,  Rob Van Dalen

IPC分类号： G02B6/122 ,  H01L31/18

CPC分类号： H01L27/15 ,  H01L31/173 ,  H01L33/343

摘要： An optocoupler device facilitates on-chip galvanic isolation. In accordance with various example embodiments, an optocoupler circuit includes a silicon-on-insulator substrate having a silicon layer on a buried insulator layer, a silicon-based light-emitting diode (LED) having a silicon p-n junction in the silicon layer, and a silicon-based photodetector in the silicon layer. The LED and photodetector are respectively connected to galvanically isolated circuits in the silicon layer. A local oxidation of silicon (LOCOS) isolation material and the buried insulator layer galvanically isolate the first circuit from the second circuit to prevent charge carriers from moving between the first and second circuits. The LED and photodetector communicate optically to pass signals between the galvanically isolated circuits.

摘要翻译： 光耦合器件便于片上电流隔离。 根据各种示例实施例，光耦合器电路包括在绝缘体层上具有硅层的绝缘体上硅衬底，在硅层中具有硅pn结的硅基发光二极管（LED），以及 硅层中的硅基光电探测器。 LED和光电检测器分别连接到硅层中的电隔离电路。 硅（LOCOS）隔离材料的局部氧化和掩埋绝缘体层将第一电路与第二电路电隔离，以防止电荷载流子在第一和第二电路之间移动。 LED和光电检测器以光学方式进行通信，以在电隔离电路之间传递信号。

公开(公告)号：US20110210435A1

公开(公告)日：2011-09-01

申请号：US13128202

申请日：2009-11-10

申请人： Greja Johanna Adriana Verheijden ,  Gerhard Koops

发明人： Greja Johanna Adriana Verheijden ,  Gerhard Koops

IPC分类号： H01L29/02 ,  H01L21/50

CPC分类号： B81C1/00333 ,  B81C2203/0136 ,  B81C2203/0145

摘要： A method of manufacturing a MEMS device comprises forming a MEMS device element 14. A sacrificial layer 20 is provided over the device element and a package cover layer 24 is provided over the sacrificial layer. A spacer layer 13 is formed over the sacrificial layer and is etched to define spacer portions adjacent an outer side wall of the sacrificial layer. These improve the hermetic sealing of the side walls of the cover layer 24.

摘要翻译： 制造MEMS器件的方法包括形成MEMS器件元件14.牺牲层20设置在器件元件上方，并且封装覆盖层24设置在牺牲层上。 间隔层13形成在牺牲层之上并被蚀刻以限定邻近牺牲层的外侧壁的间隔部分。 这些改善了覆盖层24的侧壁的气密密封。

公开(公告)号：US20100006957A1

公开(公告)日：2010-01-14

申请号：US12477798

申请日：2009-06-03

申请人： Greja Johanna Adriana Maria VERHEIJDEN ,  Roel Daamen ,  Gerhard Koops

发明人： Greja Johanna Adriana Maria VERHEIJDEN ,  Roel Daamen ,  Gerhard Koops

IPC分类号： H01L29/84 ,  H01L21/30

CPC分类号： B81C1/00293 ,  B81C2201/0115 ,  B81C2203/0136 ,  B81C2203/0145

摘要： A method of packaging a micro electromechanical structure is disclosed. The method comprises the steps of forming the structure on a substrate, depositing a sacrificial layer over the structure, patterning the sacrificial layer, depositing a porous layer over the patterned sacrificial layer, removing the patterned sacrificial layer through the porous layer, treating the porous layer with a plasma and depositing a capping layer over the plasma-treated porous layer. The plasma treatment step ensures that the capping layer material cannot enter the cavity formed by the removal of the sacrificial layer through the porous layer. A device formed by this method is also disclosed.

摘要翻译： 公开了一种封装微机电结构的方法。 该方法包括以下步骤：在衬底上形成结构，在结构上沉积牺牲层，图案化牺牲层，在图案化的牺牲层上沉积多孔层，通过多孔层去除图案化的牺牲层，处理多孔层 并在等离子体处理的多孔层上沉积覆盖层。 等离子体处理步骤确保了封盖层材料不能进入通过多孔层去除牺牲层而形成的空腔。 还公开了通过该方法形成的器件。

公开(公告)号：US08143971B2

公开(公告)日：2012-03-27

申请号：US12501272

申请日：2009-07-10

申请人： Jozef Thomas Beek ,  Johannes van Wingerden ,  Wim van den Einden ,  Kim Phan Le ,  Gerhard Koops ,  Cas van der Avoort

发明人： Jozef Thomas Beek ,  Johannes van Wingerden ,  Wim van den Einden ,  Kim Phan Le ,  Gerhard Koops ,  Cas van der Avoort

IPC分类号： H03H9/02 ,  H01L21/00

CPC分类号： H01P7/00

摘要： A MEMS resonator, comprising a planar resonator body formed of two different materials with opposite sign temperature coefficient of Young's modulus. A first portion of one material extends across the full thickness of the resonator body. This provides a design which allows reduced temperature drift.

摘要翻译： 一种MEMS谐振器，包括由具有相反符号温度系数杨氏模量的两种不同材料形成的平面谐振器本体。 一种材料的第一部分延伸穿过谐振器本体的整个厚度。 这提供了允许降低温度漂移的设计。

公开(公告)号：US20110175178A1

公开(公告)日：2011-07-21

申请号：US12953092

申请日：2010-11-23

申请人： Johannes van WINGERDEN ,  Wim van den EINDEN ,  Harold H. ROOSEN ,  Greja Johanna Adriana Maria VERHEIJDEN ,  Gerhard KOOPS ,  Didem ERNUR ,  Jozef Thomas Martinus van BEEK

发明人： Johannes van WINGERDEN ,  Wim van den EINDEN ,  Harold H. ROOSEN ,  Greja Johanna Adriana Maria VERHEIJDEN ,  Gerhard KOOPS ,  Didem ERNUR ,  Jozef Thomas Martinus van BEEK

IPC分类号： H01L29/84 ,  H01L21/20

CPC分类号： B81C1/00476 ,  B81B2201/0271 ,  B81C2203/0136 ,  B81C2203/0145 ,  H03H3/0072

摘要： A method of packaging a micro electro-mechanical structure comprises forming said structure on a substrate; depositing a sacrificial layer over said structure; patterning the sacrificial layer; depositing a SIPOS (semi-insulating polycrystalline silicon) layer over the patterned sacrificial layer; treating the SIPOS layer with an etchant to convert the SIPOS layer into a porous SIPOS layer, removing the patterned sacrificial layer through the porous layer SIPOS to form a cavity including said structure; and sealing the porous SIPOS layer. A device including such a packaged micro electro-mechanical structure is also disclosed.

摘要翻译： 包装微电子机械结构的方法包括在基底上形成所述结构; 在所述结构上沉积牺牲层; 图案化牺牲层; 在图案化的牺牲层上沉积SIPOS（半绝缘多晶硅）层; 用蚀刻剂处理SIPOS层以将SIPOS层转换成多孔SIPOS层，通过多孔层SIPOS去除图案化的牺牲层以形成包括所述结构的空腔; 并密封多孔SIPOS层。 还公开了一种包括这种封装的微机电结构的装置。

公开(公告)号：US08592228B2

公开(公告)日：2013-11-26

申请号：US12515590

申请日：2007-11-15

申请人： Johannes Donkers ,  Erwin Hijzen ,  Philippe Meunier-Beillard ,  Gerhard Koops

发明人： Johannes Donkers ,  Erwin Hijzen ,  Philippe Meunier-Beillard ,  Gerhard Koops

IPC分类号： H01L21/00

CPC分类号： B81C1/00293 ,  B81B2201/0271 ,  B81C2203/0145

摘要： A method of manufacturing a structure (1100), the method comprising forming a cap element (401) on a substrate (101), removing material (103) of the substrate (101) below the cap element (401) to thereby form a gap (802) between the cap element (401) and the substrate (101), and rearranging material of the cap element (401) and/or of the substrate (101) to thereby merge the cap element (401) and the substrate (101) to bridge the gap (802).

摘要翻译： 一种制造结构（1100）的方法，所述方法包括在基板（101）上形成盖元件（401），在盖元件（401）下方去除基板（101）的材料（103），从而形成间隙 （401）和基板（101）之间的盖（802）和盖元件（401）和/或基板（101）的重新排列材料，从而合并盖元件（401）和基板（101） ）弥合差距（802）。

公开(公告)号：US08310053B2

公开(公告)日：2012-11-13

申请号：US12427797

申请日：2009-04-22

申请人： Greja Johanna Adriana Maria Verheijden ,  Roel Daamen ,  Gerhard Koops

发明人： Greja Johanna Adriana Maria Verheijden ,  Roel Daamen ,  Gerhard Koops

IPC分类号： H01L23/522 ,  H01L21/4763 ,  H01L21/473

CPC分类号： H02N1/00 ,  B81C1/00476 ,  H01L21/02 ,  H01L21/02126 ,  H01L21/31116 ,  H01L21/50 ,  H01L21/7688 ,  H01L29/84

摘要： A micro-device with a cavity, the micro-device including a substrate. A method of forming the micro-device includes the steps of: A) providing the substrate having a surface and comprising a sacrificial oxide region at the surface; B) covering the sacrificial oxide region with a porous layer being permeable to a vapor HF etchant; and C) selectively etching the sacrificial oxide region through the porous layer using the vapor HF etchant to obtain the cavity. This method may be used in the manufacture of various micro-devices with a cavity , i.e. MEMS devices, and in particular in the encapsulation part thereof, and semiconductor devices, and in particular the BEOL-part thereof.

摘要翻译： 具有空腔的微器件，微器件包括衬底。 形成微器件的方法包括以下步骤：A）提供具有表面并且在表面包括牺牲氧化物区域的衬底; B）覆盖牺牲氧化物区域，多孔层可透过蒸汽HF蚀刻剂; 并且C）使用蒸汽HF蚀刻剂选择性地蚀刻通过多孔层的牺牲氧化物区域以获得空腔。 该方法可以用于制造具有腔体的各种微器件，即MEMS器件，特别是其封装部件，以及半导体器件，特别是其BEOL部件。

公开(公告)号：US08260098B1

公开(公告)日：2012-09-04

申请号：US13029951

申请日：2011-02-17

申请人： Dusan Golubovic ,  Gerhard Koops ,  Tony Vanhoucke ,  Rob Van Dalen

发明人： Dusan Golubovic ,  Gerhard Koops ,  Tony Vanhoucke ,  Rob Van Dalen

IPC分类号： G02B6/12 ,  H01L21/70 ,  H01L21/8238 ,  H01L21/336 ,  H01L21/331 ,  H01L21/76

CPC分类号： H01L27/15 ,  H01L31/173 ,  H01L33/343

摘要： An optocoupler device facilitates on-chip galvanic isolation. In accordance with various example embodiments, an optocoupler circuit includes a silicon-on-insulator substrate having a silicon layer on a buried insulator layer, a silicon-based light-emitting diode (LED) having a silicon p-n junction in the silicon layer, and a silicon-based photodetector in the silicon layer. The LED and photodetector are respectively connected to galvanically isolated circuits in the silicon layer. A local oxidation of silicon (LOCOS) isolation material and the buried insulator layer galvanically isolate the first circuit from the second circuit to prevent charge carriers from moving between the first and second circuits. The LED and photodetector communicate optically to pass signals between the galvanically isolated circuits.

摘要翻译： 光耦合器件便于片上电流隔离。 根据各种示例实施例，光耦合器电路包括在绝缘体层上具有硅层的绝缘体上硅衬底，在硅层中具有硅pn结的硅基发光二极管（LED），以及 硅层中的硅基光电探测器。 LED和光电检测器分别连接到硅层中的电隔离电路。 硅（LOCOS）隔离材料的局部氧化和掩埋绝缘体层将第一电路与第二电路电隔离，以防止电荷载流子在第一和第二电路之间移动。 LED和光电检测器以光学方式进行通信，以在电隔离电路之间传递信号。