公开(公告)号：US07091604B2

公开(公告)日：2006-08-15

申请号：US10861007

申请日：2004-06-04

申请人： Ian W. Wylie ,  Heinz H. Busta ,  David J. Schroeder ,  J. Scott Steckenrider ,  Yuchun Wang

发明人： Ian W. Wylie ,  Heinz H. Busta ,  David J. Schroeder ,  J. Scott Steckenrider ,  Yuchun Wang

IPC分类号： H01L23/34

CPC分类号： H01L23/473 ,  H01L21/4882 ,  H01L21/76898 ,  H01L25/0657 ,  H01L25/50 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2225/06589 ,  H01L2225/06593 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A three-dimensional integrated circuit that provides reduced interconnect signal delay over known 2-dimensional systems. The three-dimensional integrated circuit also allows improved circuit cooling. The three-dimensional integrated circuit includes two or more electrically connected integrated circuits, separated by a cooling channel.

摘要翻译： 一种三维集成电路，可在已知的二维系统上提供缩短的互连信号延迟。 三维集成电路还可以改善电路冷却。 三维集成电路包括由冷却通道隔开的两个或更多个电连接的集成电路。

公开(公告)号：US08639377B2

公开(公告)日：2014-01-28

申请号：US12267526

申请日：2008-11-07

申请人： Kun Xu ,  Feng Q Liu ,  Yuchun Wang ,  Abraham Ravid ,  Wen-Chiang Tu

发明人： Kun Xu ,  Feng Q Liu ,  Yuchun Wang ,  Abraham Ravid ,  Wen-Chiang Tu

IPC分类号： G06F19/00 ,  F04B19/16 ,  F04D27/02 ,  F04D23/00

CPC分类号： G01B11/0683 ,  B24B37/005 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

摘要： Methods of determining thickness and phase of a GST layer on a semiconductor substrate are described using intensity spectra within the infra-red range. In particular, techniques for using certain transmission at certain frequencies are disclosed for faster thickness and phase determination in an in-line or standalone metrology/monitoring system for CMP processes.

摘要翻译： 使用在红外范围内的强度光谱来描述确定半导体衬底上的GST层的厚度和相位的方法。 特别地，公开了在某些频率下使用某些传输的技术，用于在用于CMP工艺的在线或独立计量/监测系统中更快的厚度和相位确定。

公开(公告)号：US08210900B2

公开(公告)日：2012-07-03

申请号：US12263237

申请日：2008-10-31

申请人： Wen-Chiang Tu ,  You Wang ,  Yuchun Wang ,  Lakshmanan Karuppiah

发明人： Wen-Chiang Tu ,  You Wang ,  Yuchun Wang ,  Lakshmanan Karuppiah

IPC分类号： B24B49/00

CPC分类号： B24B37/04 ,  B24B57/02

摘要： A method and apparatus for polishing or planarizing a substrate by a chemical mechanical polishing process. In one embodiment a method of processing a semiconductor substrate is provided. The method comprises positioning a substrate on a polishing apparatus comprising a polishing pad assembly, delivering a polishing slurry to a surface of the polishing pad assembly, polishing the substrate with the surface of the polishing pad assembly, monitoring the removal rate of material from a plurality of regions on the surface of the substrate, determining whether the plurality of regions on the surface of the substrate are polishing uniformly, and selectively delivering a polishing slurry additive to at least one region of the plurality of regions to obtain a uniform removal rate of material from the plurality of regions on the surface of the substrate, wherein the removal rate of material from the at least one region is different than at least one other region of the plurality of regions.

摘要翻译： 一种用于通过化学机械抛光工艺抛光或平面化基板的方法和装置。 在一个实施例中，提供了一种处理半导体衬底的方法。 该方法包括将衬底定位在包括抛光垫组件的抛光设备上，将抛光浆料输送到抛光垫组件的表面，用抛光垫组件的表面抛光衬底，监测来自多个部件的材料的去除速率 在基板表面上确定基板表面上的多个区域是否均匀抛光，并且将抛光浆料添加剂选择性地输送到多个区域中的至少一个区域以获得均匀的材料去除速率 从所述衬底表面上的多个区域中去除所述至少一个区域的材料的去除速率不同于所述多个区域中的至少一个其它区域。

公开(公告)号：US20070099552A1

公开(公告)日：2007-05-03

申请号：US11555145

申请日：2006-10-31

申请人： Liang-Yuh Chen ,  Yuchun Wang ,  Yan Wang ,  Alain Duboust ,  Daniel Carl ,  Ralph Wadensweiler ,  Manoocher Birang ,  Paul Butterfield ,  Rashid Mavliev ,  Stan Tsai ,  You Wang ,  Jie Diao ,  Renhe Jia ,  Lakshmanan Karuppiah ,  Robert Ewald

发明人： Liang-Yuh Chen ,  Yuchun Wang ,  Yan Wang ,  Alain Duboust ,  Daniel Carl ,  Ralph Wadensweiler ,  Manoocher Birang ,  Paul Butterfield ,  Rashid Mavliev ,  Stan Tsai ,  You Wang ,  Jie Diao ,  Renhe Jia ,  Lakshmanan Karuppiah ,  Robert Ewald

IPC分类号： B23F21/03

CPC分类号： B24B37/046 ,  B24B27/0023 ,  B24B37/24 ,  B24B37/26 ,  B24D3/34 ,  B82Y30/00

摘要： An article of manufacture and apparatus are provided for processing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive polishing surface. An electrode is disposed below the polishing surface having a dielectric material therebetween. A plurality of apertures may be formed in the polishing surface and the dielectric material to at least partially expose the electrode to the polishing surface. A membrane may be disposed between the electrode and the polishing surface that is permeable to ions and current to promote continuity between the electrode and the polishing surface.

摘要翻译： 提供了一种用于处理基板表面的制造和设备。 在一个方面，提供了一种用于抛光衬底的制品，所述衬底包括具有至少部分导电的抛光表面的主体的抛光制品。 电极设置在其间具有介电材料的抛光表面下方。 可以在抛光表面和电介质材料中形成多个孔，以至少部分地将电极暴露于抛光表面。 可以在电极和抛光表面之间设置膜，其可透过离子和电流，以促进电极和抛光表面之间的连续性。

公开(公告)号：US20070066201A1

公开(公告)日：2007-03-22

申请号：US11556011

申请日：2006-11-02

申请人： Liang-Yuh Chen ,  Yuchun Wang ,  Yan Wang ,  Alain Duboust ,  Daniel Carl ,  Ralph Wadensweiler ,  Manoocher Birang ,  Paul Butterfield ,  Rashid Mavliev ,  Stan Tsai

发明人： Liang-Yuh Chen ,  Yuchun Wang ,  Yan Wang ,  Alain Duboust ,  Daniel Carl ,  Ralph Wadensweiler ,  Manoocher Birang ,  Paul Butterfield ,  Rashid Mavliev ,  Stan Tsai

IPC分类号： B23F21/03

CPC分类号： B82Y30/00 ,  B24B37/046 ,  B24B37/24 ,  B24B37/26 ,  B24D3/34

摘要： An article of manufacture and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive surface adapted to polish the substrate. A plurality of perforations may be formed in the polishing article for flow of material therethrough. An electrode is also exposed to the polishing surface by at least a portion of the plurality of perforations. The article of manufacture may also include a polishing surface having a plurality of grooves, wherein a portion of the plurality of grooves intersect with a portion of the plurality of perforations.

摘要翻译： 提供了一种用于平坦化基板表面的制造和设备。 在一个方面，提供了一种用于抛光衬底的制品，所述衬底包括抛光制品，所述抛光制品包括具有适于抛光所述衬底的至少部分导电表面的主体。 可以在抛光制品中形成多个穿孔，以使材料流过其中。 电极还通过多个穿孔的至少一部分暴露于抛光表面。 制品还可以包括具有多个凹槽的抛光表面，其中多个凹槽的一部分与多个穿孔的一部分相交。

公开(公告)号：US20050269665A1

公开(公告)日：2005-12-08

申请号：US10861007

申请日：2004-06-04

申请人： Ian Wylie ,  Heinz Busta ,  David Schroeder ,  J. Steckenrider ,  Yuchun Wang

发明人： Ian Wylie ,  Heinz Busta ,  David Schroeder ,  J. Steckenrider ,  Yuchun Wang

IPC分类号： H01L21/48 ,  H01L21/768 ,  H01L21/98 ,  H01L23/34 ,  H01L23/473 ,  H01L25/065 ,  H01L29/00 ,  H01L29/06

CPC分类号： H01L23/473 ,  H01L21/4882 ,  H01L21/76898 ,  H01L25/0657 ,  H01L25/50 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2225/06589 ,  H01L2225/06593 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A three-dimensional integrated circuit that provides reduced interconnect signal delay over known 2-dimensional systems. The three-dimensional integrated circuit also allows improved circuit cooling. The three-dimensional integrated circuit comprises two or more electrically connected integrated circuits, separated by a cooling channel.

摘要翻译： 一种三维集成电路，可在已知的二维系统上提供缩短的互连信号延迟。 三维集成电路还可以改善电路冷却。 三维集成电路包括由冷却通道隔开的两个或更多个电连接的集成电路。

公开(公告)号：US06537144B1

公开(公告)日：2003-03-25

申请号：US09505899

申请日：2000-02-17

申请人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

发明人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

IPC分类号： B24D1100

CPC分类号： B24B37/26 ,  B24B53/017 ,  H01L21/3212

摘要： Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

公开(公告)号：US06520840B1

公开(公告)日：2003-02-18

申请号：US09692723

申请日：2000-10-19

申请人： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

发明人： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

IPC分类号： B24B100

CPC分类号： C09K3/1463 ,  C09G1/02

摘要： A CMP slurry is formulated with an oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal thereby minimizing overetching. The slurry may further include abrasive particles, inhibitors, pH adjusting agents, and combinations thereof.

摘要翻译： 用能够氧化经历平坦化的金属的氧化剂配制CMP浆料，并产生与氧化金属络合的络合剂，从而使过蚀刻最小化。 浆料还可包括磨料颗粒，抑制剂，pH调节剂及其组合。

公开(公告)号：US09073169B2

公开(公告)日：2015-07-07

申请号：US13223159

申请日：2011-08-31

申请人： Kun Xu ,  Ingemar Carlsson ,  Feng Q. Liu ,  David Maxwell Gage ,  You Wang ,  Dominic J. Benvegnu ,  Boguslaw A. Swedek ,  Yuchun Wang ,  Pierre Fontarensky ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

发明人： Kun Xu ,  Ingemar Carlsson ,  Feng Q. Liu ,  David Maxwell Gage ,  You Wang ,  Dominic J. Benvegnu ,  Boguslaw A. Swedek ,  Yuchun Wang ,  Pierre Fontarensky ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

IPC分类号： G06F19/00 ,  H01L21/00 ,  B24B49/00 ,  B24B37/005 ,  B24B37/04 ,  B24B37/10 ,  B24B37/30 ,  B24B49/12 ,  G01B11/06

CPC分类号： B24B37/005 ,  B24B37/042 ,  B24B37/107 ,  B24B37/30 ,  B24B49/12 ,  G01B11/0683

摘要： A method of controlling polishing includes polishing a first substrate having an overlying layer on an underlying layer or layer structure. During polishing, the substrate is monitored with an in-situ monitoring system to generate a sequence of measurements. The measurements are sorted into groups, each group associated with a different zone of a plurality of zones on the substrate. For each zone, a time at which the overlying layer is cleared is determined based on the measurements from the associated group. At least one second adjusted polishing pressure for at least zone is calculated based on a pressure applied in the at least one zone during polishing the substrate, the time for the at least one zone, and the time for another zone. A second substrate is polished using the at least one adjusted polishing pressure.

摘要翻译： 控制抛光的方法包括在下层或层结构上抛光具有上层的第一衬底。 在抛光期间，用原位监测系统监测基底以产生测量序列。 测量被分组成组，每个组与衬底上的多个区域的不同区域相关联。 对于每个区域，基于来自关联组的测量来确定覆盖层被清除的时间。 基于在抛光衬底期间在至少一个区域中施加的压力，至少一个区域的时间和另一个区域的时间来计算至少一个至少一个区域的调整后的第二抛光压力。 使用至少一个调整的抛光压力来抛光第二基底。

公开(公告)号：US20130186850A1

公开(公告)日：2013-07-25

申请号：US13357535

申请日：2012-01-24

申请人： You Wang ,  Chenhao Ge ,  Yufei Chen ,  Yuchun Wang ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

发明人： You Wang ,  Chenhao Ge ,  Yufei Chen ,  Yuchun Wang ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

IPC分类号： C09K13/00 ,  C09K13/02 ,  H05K3/26

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/3212 ,  H01L23/53238 ,  H01L23/53257 ,  H01L2924/0002 ,  H05K3/045 ,  H05K3/107 ,  H01L2924/00

摘要： A slurry for chemical mechanical of a cobalt layer or a conductive layer over a cobalt layer includes abrasive particles, an organic complexing compound for Cu or Co ion complexion, a Co corrosion inhibitor that is 0.01-1.0 wt % of the slurry, an oxidizer, and a solvent. The slurry has a pH of 7-12.

摘要翻译： 用于钴层或钴层上的导电层的化学机械的浆料包括磨料颗粒，用于Cu或Co离子表面的有机络合化合物，作为浆料的0.01-1.0重量％的Co腐蚀抑制剂，氧化剂， 和溶剂。 浆液的pH为7-12。