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    Gas delivery system for semiconductor processing
    2.
    发明授权
    Gas delivery system for semiconductor processing 有权
    用于半导体加工的气体输送系统

    公开(公告)号：US07498268B2

    公开(公告)日：2009-03-03

    申请号：US11552129

    申请日：2006-10-23

    申请人： Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom K. Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh N. Pham ,  Zhong Qiang Hua

    发明人： Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom K. Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh N. Pham ,  Zhong Qiang Hua

    IPC分类号： H01L21/461 ,  H01L21/302

    CPC分类号： H01L21/67017 ,  H01L21/67109

    摘要： The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.

    摘要翻译： 本发明旨在改善半导体处理系统中的缺陷性能。 在具体实施例中，用于处理半导体衬底的设备包括限定其中的处理区域的腔室和设置在腔室中以支撑半导体衬底的衬底支撑件。 至少一个喷嘴延伸到室中以通过喷嘴开口将工艺气体引入室中。 该装置包括至少一个隔热罩，每个隔热罩设置在至少一个喷嘴之一的至少一部分周围。 隔热罩具有向喷嘴的喷嘴开口向远侧突出的延伸部分，其包括用于工艺气体从喷嘴开口流过的隔热开口。 隔热罩降低了处理室中的喷嘴的温度，用于将工艺气体引入其中以减少颗粒。

    Deposition process for high aspect ratio trenches
    3.
    发明授权
    Deposition process for high aspect ratio trenches 有权
    高宽比沟槽沉积工艺

    公开(公告)号：US07097886B2

    公开(公告)日：2006-08-29

    申请号：US10319827

    申请日：2002-12-13

    申请人： Farhad K. Moghadam ,  Michael S. Cox ,  Padmanabhan Krishnaraj ,  Thanh N. Pham ,  Zhenjiang Cui

    发明人： Farhad K. Moghadam ,  Michael S. Cox ,  Padmanabhan Krishnaraj ,  Thanh N. Pham ,  Zhenjiang Cui

    IPC分类号： H05H1/24

    CPC分类号： H01J37/32082 ,  C23C16/045 ,  H01J2237/3327 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31612 ,  H01L21/76229

    摘要： A method of depositing an insulating film over a substrate having a gap formed between two adjacent raised features. The method includes depositing one portion of the insulating film over the substrate and in the gap using a high density plasma process that has simultaneous deposition and sputtering components and depositing another portion of the insulating film over the substrate and in the gap using an atomic layer deposition process. In some embodiments the portion of the film deposited by an atomic layer deposition process is deposited over the portion of the film deposited using a high density plasma CVD technique. In other embodiments, the portion of the film deposited by a high density plasma CVD process is deposited over the portion of the film deposited using an atomic layer deposition process.

    摘要翻译： 一种在具有形成在两个相邻凸起特征之间的间隙的基底上沉积绝缘膜的方法。 该方法包括使用具有同时沉积和溅射部件的高密度等离子体工艺在衬底上和间隙中沉积绝缘膜的一部分，并使用原子层沉积在衬底上和间隙中沉积绝缘膜的另一部分 处理。 在一些实施例中，通过原子层沉积工艺沉积的膜的部分沉积在使用高密度等离子体CVD技术沉积的膜的部分上。 在其他实施例中，通过高密度等离子体CVD工艺沉积的膜的部分沉积在使用原子层沉积工艺沉积的膜的部分上。

    Sequential gas flow oxide deposition technique
    5.
    发明授权
    Sequential gas flow oxide deposition technique 失效
    顺序气流氧化沉积技术

    公开(公告)号：US07399388B2

    公开(公告)日：2008-07-15

    申请号：US10627228

    申请日：2003-07-25

    申请人： Farhad K. Moghadam ,  Michael S. Cox ,  Padmanabhan Krishnaraj ,  Thanh N. Pham

    发明人： Farhad K. Moghadam ,  Michael S. Cox ,  Padmanabhan Krishnaraj ,  Thanh N. Pham

    IPC分类号： C23C14/34 ,  C23C16/00

    CPC分类号： C23C16/45542 ,  C23C16/402 ,  C23C16/507

    摘要： A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in which the substrate is disposed such that one or more layers of the silicon-containing reactant are adsorbed onto the substrate; purging or evacuating the chamber of the silicon-containing reactant; converting the silicon-containing reactant into a silica glass insulating compound by exposing the substrate to oxygen radicals formed from a second reactant while biasing the substrate to promote a sputtering effect, wherein an average atomic mass of all atomic constituents in the second reactant is less than or equal to an average atomic mass of oxygen; and repeating the exposing, purging/evacuating and exposing sequence a plurality of times until a desired film thickness is reached.

    摘要翻译： 一种在基板上沉积石英玻璃绝缘膜的方法。 在一个实施方案中，该方法包括将基底暴露于引入到其中设置基底的室中的含硅反应物，使得一层或多层含硅反应物被吸附到基底上; 吹扫或抽空含硅反应物的室; 通过将衬底暴露于由第二反应物形成的氧自由基，同时偏置衬底以促进溅射效应，将含硅反应物转化为石英玻璃绝缘化合物，其中第二反应物中所有原子组分的平均原子质量小于 或等于氧的平均原子质量; 并重复曝光，吹扫/排空和曝光序列多次，直至达到所需的膜厚度。

    Gap filling with a composite layer
    7.
    发明授权
    Gap filling with a composite layer 失效
    间隙填充复合层

    公开(公告)号：US07033945B2

    公开(公告)日：2006-04-25

    申请号：US10857829

    申请日：2004-06-01

    申请人： Jeong Soo Byun ,  Zheng Yuan ,  Shankar Venkataraman ,  M. Ziaul Karim ,  Thanh N. Pham ,  Ellie Y. Yieh

    发明人： Jeong Soo Byun ,  Zheng Yuan ,  Shankar Venkataraman ,  M. Ziaul Karim ,  Thanh N. Pham ,  Ellie Y. Yieh

    IPC分类号： H01L21/311

    CPC分类号： H01L21/76224

    摘要： A method of filling a gap formed between adjacent raised surfaces on a substrate. In one embodiment the method comprises depositing a boron-doped silica glass (BSG) layer over the substrate to partially fill the gap using a thermal CVD process; exposing the BSG layer to a steam ambient at a temperature above the BSG layer's Eutectic temperature; removing an upper portion of the BSG layer by exposing the layer to a fluorine-containing etchant; and depositing an undoped silica glass (USG) layer over the BSG layer to fill the remainder of the gap.

    摘要翻译： 填充在基板上相邻的凸起表面之间形成的间隙的方法。 在一个实施例中，该方法包括在衬底上沉积硼掺杂石英玻璃（BSG）层，以使用热CVD工艺部分填充间隙; 在高于BSG层的共晶温度的温度下将BSG层暴露于蒸汽环境; 通过将层暴露于含氟蚀刻剂来除去BSG层的上部; 以及在BSG层上沉积未掺杂的二氧化硅玻璃（USG）层以填补间隙的剩余部分。

    Corrosion-resistant gas distribution plate for plasma processing chamber
    8.
    发明申请
    Corrosion-resistant gas distribution plate for plasma processing chamber 审中-公开
    用于等离子体处理室的耐腐蚀气体分布板

    公开(公告)号：US20090087615A1

    公开(公告)日：2009-04-02

    申请号：US12290437

    申请日：2008-10-29

    申请人： Jennifer Y. Sun ,  Senh Thach ,  James Dempster ,  Li Xu ,  Thanh N. Pham

    发明人： Jennifer Y. Sun ,  Senh Thach ,  James Dempster ,  Li Xu ,  Thanh N. Pham

    IPC分类号： B32B3/24

    CPC分类号： C23C16/45565 ,  C04B41/009 ,  C04B41/5353 ,  C04B41/91 ,  C23C16/4404 ,  C23C16/4407 ,  C30B35/00 ,  H01J37/3244 ,  H01J37/32467 ,  H01J37/32862 ,  Y10T428/24273 ,  Y10T428/24314 ,  C04B35/505

    摘要： Disclosed herein is a gas distribution plate for use in a gas distribution assembly for a processing chamber, where the gas distribution plate is fabricated from a solid yttrium oxide-comprising substrate, which may also include aluminum oxide. The gas distribution plate includes a plurality of through-holes, which are typically crescent-shaped. Through-holes which have been formed in the solid yttrium oxide-comprising substrate by ultrasonic drilling perform particularly well. The solid yttrium oxide-comprising substrate typically comprises at least 99.9% yttrium oxide, and has a density of at least 4.92 g/cm3, a water absorbency of about 0.02% or less, and an average grain size within the range of about 10 μm to about 25 μm. Also disclosed herein are methods for fabricating and cleaning the yttrium oxide-comprising gas distribution plate.

    摘要翻译： 本文公开了一种用于处理室的气体分配组件中的气体分配板，其中气体分配板由可能还包括氧化铝的固体含氧化钇衬底制成。 气体分配板包括通常为月牙形的多个通孔。 通过超声波钻孔在固体含氧化钇基质中形成的通孔特别好。 固体含氧化钇的衬底通常包含至少99.9％的氧化钇，并且具有至少4.92g / cm 3的密度，约0.02％或更低的吸水率，以及在约10μm范围内的平均晶粒尺寸 到大约25个妈妈。 本文还公开了用于制造和清洁含氧化钇气体分配板的方法。

    In-situ-etch-assisted HDP deposition
    10.
    发明授权
    In-situ-etch-assisted HDP deposition 失效
    原位蚀刻辅助HDP沉积

    公开(公告)号：US07294588B2

    公开(公告)日：2007-11-13

    申请号：US11388657

    申请日：2006-03-24

    申请人： M. Ziaul Karim ,  DongQing Li ,  Jeong Soo Byun ,  Thanh N. Pham

    发明人： M. Ziaul Karim ,  DongQing Li ,  Jeong Soo Byun ,  Thanh N. Pham

    IPC分类号： H01L21/31 ,  H01I21/469

    CPC分类号： C23C16/402 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76837

    摘要： A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.

    摘要翻译： 提供了一种在设置在处理室中的衬底上沉积氧化硅膜的工艺。 包括卤素源，流动气体，硅源和氧化性气体反应物的处理气体流入处理室。 从处理气体形成离子密度为至少10 11个/ cm 3的等离子体。 氧化硅膜以低于1.0％的卤素浓度沉积在衬底上。 使用具有同时沉积和溅射组分的工艺，用等离子体沉积氧化硅膜。 卤素源到处理室的流速与硅源到处理室的流速基本上在0.5和3.0之间。