公开(公告)号：US20090152100A1

公开(公告)日：2009-06-18

申请号：US12012120

申请日：2008-01-31

申请人： Hormazdyar Minocher Dalal ,  Jagdish Prasad ,  Hocine Bouzid Ziad

发明人： Hormazdyar Minocher Dalal ,  Jagdish Prasad ,  Hocine Bouzid Ziad

IPC分类号： C23C14/04 ,  C23C14/34 ,  C23C14/14

CPC分类号： C23C14/022 ,  C23C14/165 ,  C23C14/584 ,  C23C18/1605 ,  C23C18/1651 ,  C23C18/32 ,  C23C18/54 ,  C23C28/321 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C25D5/022 ,  H01L21/76804 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76885 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/04042 ,  H01L2224/05005 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05547 ,  H01L2224/05548 ,  H01L2224/05562 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/48599 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48699 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/01022 ,  H01L2924/00012 ,  H01L2224/13147 ,  H01L2224/13144 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/05552

摘要： The present invention relates to a high power IC (Integrated Circuit) semiconductor device and process for making same. More particularly, the invention encompasses a high conductivity or low resistance metal stack to reduce the device R-on which is stable at high temperatures while in contact with a thick aluminum wire-bond that is required for high current carrying capability and is mechanically stable against vibration during use, and process thereof. The invention further discloses a thick metal interconnect with metal pad caps at selective sites, and process for making the same.

公开(公告)号：US07800239B2

公开(公告)日：2010-09-21

申请号：US12012121

申请日：2008-01-31

申请人： Hormazdyar Minocher Dalal ,  Jagdish Prasad ,  Hocine Bouzid Ziad

发明人： Hormazdyar Minocher Dalal ,  Jagdish Prasad ,  Hocine Bouzid Ziad

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L29/40

CPC分类号： C23C14/022 ,  C23C14/165 ,  C23C14/584 ,  C23C18/1605 ,  C23C18/1651 ,  C23C18/32 ,  C23C18/54 ,  C23C28/321 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C25D5/022 ,  H01L21/76804 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76885 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/04042 ,  H01L2224/05005 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05547 ,  H01L2224/05548 ,  H01L2224/05562 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/48599 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48699 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/01022 ,  H01L2924/00012 ,  H01L2224/13147 ,  H01L2224/13144 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/05552

摘要： The present invention relates to a high power IC (Integrated Circuit) semiconductor device and process for making same. More particularly, the invention encompasses a high conductivity or low resistance metal stack to reduce the device R-on which is stable at high temperatures while in contact with a thick aluminum wire-bond that is required for high current carrying capability and is mechanically stable against vibration during use, and process thereof. The invention further discloses a thick metal interconnect with metal pad caps at selective sites, and process for making the same.

摘要翻译： 本发明涉及一种高功率IC（集成电路）半导体器件及其制造方法。 更具体地，本发明包括高导电性或低电阻金属叠层，以减少在高温下稳定的器件R-on，同时与用于高电流承载能力所需的厚铝线接合并且机械稳定地抵抗 使用过程中的振动及其过程。 本发明还公开了一种在选择性位置具有金属垫帽的厚金属互连及其制造方法。

公开(公告)号：US20090152725A1

公开(公告)日：2009-06-18

申请号：US12012121

申请日：2008-01-31

申请人： Hormazdyar Minocher Dalal ,  Jagdish Prasad ,  Hocine Bouzid Ziad

发明人： Hormazdyar Minocher Dalal ,  Jagdish Prasad ,  Hocine Bouzid Ziad

IPC分类号： H01L23/49

CPC分类号： C23C14/022 ,  C23C14/165 ,  C23C14/584 ,  C23C18/1605 ,  C23C18/1651 ,  C23C18/32 ,  C23C18/54 ,  C23C28/321 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C25D5/022 ,  H01L21/76804 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76885 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/04042 ,  H01L2224/05005 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05547 ,  H01L2224/05548 ,  H01L2224/05562 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/48599 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48699 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/01022 ,  H01L2924/00012 ,  H01L2224/13147 ,  H01L2224/13144 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/05552

摘要： The present invention relates to a high power IC (Integrated Circuit) semiconductor device and process for making same. More particularly, the invention encompasses a high conductivity or low resistance metal stack to reduce the device R-on which is stable at high temperatures while in contact with a thick aluminum wire-bond that is required for high current carrying capability and is mechanically stable against vibration during use, and process thereof. The invention further discloses a thick metal interconnect with metal pad caps at selective sites, and process for making the same.

摘要翻译： 本发明涉及一种高功率IC（集成电路）半导体器件及其制造方法。 更具体地，本发明包括高导电性或低电阻金属叠层，以减少在高温下稳定的器件R-on，同时与用于高电流承载能力所需的厚铝线接合并且机械稳定地抵抗 使用过程中的振动及其过程。 本发明还公开了一种在选择性位置具有金属垫帽的厚金属互连及其制造方法。

公开(公告)号：US20140251542A1

公开(公告)日：2014-09-11

申请号：US13791007

申请日：2013-03-08

申请人： John Michael Parsey, Jr. ,  Hocine-Bouzid Ziad

发明人： John Michael Parsey, Jr. ,  Hocine-Bouzid Ziad

IPC分类号： H01L21/673

CPC分类号： H01L21/6875 ,  H01L21/68735

摘要： In one embodiment, a wafer susceptor is formed to have portion of the susceptor that is positioned between a wafer pocket and an outside edge of the susceptor to have a non-uniform and/or a non-planar surface. In another embodiment, the non-uniform and/or non-planar surface includes one of a recess into the surface or a protrusion extending away from the surface.

摘要翻译： 在一个实施例中，晶片基座形成为具有位于晶片槽和基座的外边缘之间的基座的具有不均匀和/或非平面表面的部分。 在另一个实施例中，非均匀和/或非平面表面包括进入表面的凹陷之一或远离表面延伸的突起中的一个。

公开(公告)号：US07947592B2

公开(公告)日：2011-05-24

申请号：US12012120

申请日：2008-01-31

申请人： Hormazdyar Minocher Dalal ,  Jagdish Prasad ,  Hocine Bouzid Ziad

发明人： Hormazdyar Minocher Dalal ,  Jagdish Prasad ,  Hocine Bouzid Ziad

IPC分类号： H01L21/44

CPC分类号： C23C14/022 ,  C23C14/165 ,  C23C14/584 ,  C23C18/1605 ,  C23C18/1651 ,  C23C18/32 ,  C23C18/54 ,  C23C28/321 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C25D5/022 ,  H01L21/76804 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76885 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/04042 ,  H01L2224/05005 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05547 ,  H01L2224/05548 ,  H01L2224/05562 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/48599 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48699 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/01022 ,  H01L2924/00012 ,  H01L2224/13147 ,  H01L2224/13144 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/05552

摘要： The present invention relates to a high power IC (Integrated Circuit) semiconductor device and process for making same. More particularly, the invention encompasses a high conductivity or low resistance metal stack to reduce the device R-on which is stable at high temperatures while in contact with a thick aluminum wire-bond that is required for high current carrying capability and is mechanically stable against vibration during use, and process thereof. The invention further discloses a thick metal interconnect with metal pad caps at selective sites, and process for making the same.

摘要翻译： 本发明涉及一种高功率IC（集成电路）半导体器件及其制造方法。 更具体地，本发明包括高导电性或低电阻金属叠层，以减少在高温下稳定的器件R-on，同时与用于高电流承载能力所需的厚铝线接合并且机械稳定地抵抗 使用过程中的振动及其过程。 本发明还公开了一种在选择性位置具有金属垫帽的厚金属互连及其制造方法。