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    Methods for sidewall protection of metal interconnect for unlanded vias using physical vapor deposition
    6.
    发明授权
    Methods for sidewall protection of metal interconnect for unlanded vias using physical vapor deposition 有权
    使用物理气相沉积法对未上空通孔进行金属互连的侧壁保护方法

    公开(公告)号：US06960529B1

    公开(公告)日：2005-11-01

    申请号：US10373911

    申请日：2003-02-24

    申请人： Mark M. Nelson ,  Brett N. Williams ,  Jagdish Prasad

    发明人： Mark M. Nelson ,  Brett N. Williams ,  Jagdish Prasad

    IPC分类号： H01L21/311 ,  H01L21/768

    CPC分类号： H01L21/76852

    摘要： Methods for protecting the sidewall of a metal interconnect component using Physical Vapor Deposition (PVD) processes and using a single barrier metal material. After forming the metal interconnect component, a single barrier metal is deposited on its sidewall using PVD. A subsequent anisotropic etching of the barrier metal removes the barrier metal from the horizontal surface except for some that still remains on the top surface of the metal interconnect layer. A dielectric layer is then formed over the metal interconnect component and the barrier metal. The unlanded via is etched through the dielectric layer to the metal interconnect component, and then filled with a second metal to thereby allow the metal interconnect component to electrically connect with one or more upper metal layers.

    摘要翻译： 使用物理气相沉积（PVD）工艺和使用单个阻挡金属材料来保护金属互连部件的侧壁的方法。 在形成金属互连部件之后，使用PVD在其侧壁上沉积单个阻挡金属。 阻挡金属的随后的各向异性蚀刻从水平表面除去阻挡金属，除了仍然保留在金属互连层的顶表面上的阻挡金属。 然后在金属互连部件和阻挡金属上形成电介质层。 通过电介质层将未经过通孔蚀刻到金属互连部件，然后用第二金属填充，从而允许金属互连部件与一个或多个上金属层电连接。