公开(公告)号：US09231425B2

公开(公告)日：2016-01-05

申请号：US13405472

申请日：2012-02-27

申请人： JinKyu Lee ,  Jin Seok Heo ,  Min Chul Jang ,  DalMo Kang

发明人： JinKyu Lee ,  Jin Seok Heo ,  Min Chul Jang ,  DalMo Kang

IPC分类号： H02J7/00 ,  B60L1/02 ,  B60L3/00 ,  B60L11/18 ,  H01M10/42 ,  H01M10/48 ,  H01M16/00 ,  H01M10/625 ,  H01M10/615 ,  H01M10/637 ,  H01M10/647

CPC分类号： H02J7/0054 ,  B60L1/02 ,  B60L3/0046 ,  B60L11/1868 ,  B60L11/1872 ,  B60L11/1875 ,  B60L2210/12 ,  B60L2210/14 ,  B60L2240/545 ,  B60L2240/662 ,  H01M10/425 ,  H01M10/4264 ,  H01M10/443 ,  H01M10/486 ,  H01M10/615 ,  H01M10/625 ,  H01M10/637 ,  H01M10/647 ,  H01M16/00 ,  H01M16/003 ,  H01M16/006 ,  H02J7/0057 ,  Y02T10/7005 ,  Y02T10/7066 ,  Y02T10/7225 ,  Y02T10/7233 ,  Y02T10/7291 ,  Y02T90/16

摘要： Disclosed is a battery pack system to supply current necessary to operate an external device, including a battery module including battery cells which can be charged and discharged, a temperature sensor, an auxiliary power unit to supply a charge and discharge pulse current to the battery module, and a controller to connect the auxiliary power unit to the battery module so that the charge and discharge pulse current is supplied to the battery module when a measured temperature (Tbat) of the battery module is less than a set temperature (Tcrit) based on information detected by the temperature sensor before the battery module is electrically connected to the external device and to interrupt the supply of the charge and discharge pulse current to the battery module when the temperature of the battery module becomes equal to or greater than the set temperature (Tcrit) and an operating method of the same.

摘要翻译： 公开了一种用于提供操作外部设备所需的电流的电池组系统，包括包括可以充放电的电池单元的电池模块，温度传感器，辅助电源单元，以向电池模块提供充电和放电脉冲电流 以及控制器，用于当所述电池模块的测量温度（Tbat）小于设定温度（Tcrit）时，将所述辅助电源单元连接到所述电池模块，使得所述充电和放电脉冲电流被提供给所述电池模块 在电池模块电连接到外部装置之前由温度传感器检测到的信息，并且当电池模块的温度等于或大于设定温度时中断向电池模块的充电和放电脉冲电流的供应（ Tcrit）及其操作方法。

公开(公告)号：US08860421B2

公开(公告)日：2014-10-14

申请号：US13050493

申请日：2011-03-17

申请人： Jin-Seok Heo ,  Jee-Ho Kim ,  Dal-Hoon Lee ,  Sang-Hoon Lee

发明人： Jin-Seok Heo ,  Jee-Ho Kim ,  Dal-Hoon Lee ,  Sang-Hoon Lee

IPC分类号： G01N27/416 ,  G01R31/36 ,  G01R19/165 ,  H01M10/48

CPC分类号： G01R31/3658 ,  B60L11/1855 ,  B60L11/1859 ,  B60L11/1866 ,  G01R19/16542 ,  G01R31/362 ,  H01M10/48 ,  H02J7/0021 ,  Y02T10/7005 ,  Y02T10/7061

摘要： A cell voltage measuring apparatus of a battery pack comprises a plurality of multiplexers connected corresponding to each cell group of the battery pack and operated to output a voltage signal of each cell in each cell group based on a reference potential applied from a corresponding cell group; a plurality of floating capacitors connected corresponding to each cell in each cell group and on which the voltage of each cell is charged and held; a switching means for enabling the voltage of each cell to be charged and held on each corresponding floating capacitor; and a controller for controlling the switching means per each cell group to enable the voltage of each cell to be charged and held on each corresponding floating capacitor and controlling each multiplexer to measure the cell voltage held on each floating capacitor of each cell group connected to each corresponding multiplexer.

摘要翻译： 电池组的电池电压测量装置包括对应于电池组的每个电池组连接的多个多路复用器，并且被操作以基于从相应的电池组施加的参考电位输出每个电池组中的每个电池单元的电压信号; 与每个单元组中的每个单元对应地连接的多个浮置电容器，并且在每个单元组中对每个单元的电压进行充电和保持; 开关装置，用于使每个电池的电压被充电并保持在每个对应的浮动电容器上; 以及控制器，用于控制每个单元组的开关装置，以使每个单元的电压被充电并保持在每个相应的浮动电容器上，并且控制每个多路复用器以测量保持在每个单元组连接的每个单元组的每个浮置电容器上的单元电压 相应的多路复用器。

公开(公告)号：US08779426B2

公开(公告)日：2014-07-15

申请号：US12834671

申请日：2010-07-12

申请人： Jae-Seok Heo ,  Ji-Yeon Seo

发明人： Jae-Seok Heo ,  Ji-Yeon Seo

IPC分类号： H01L29/04

CPC分类号： H01L29/7869

摘要： A thin film transistor for increasing the conductivity of a channel region and suppressing the leakage current of a back channel region, and a display device including the thin film transistor, are discussed. According to an embodiment, the thin film transistor includes a gate electrode arranged on a substrate, a source electrode and a drain electrode spaced from each other on the substrate, a gate insulating film to insulate the gate electrode from the source electrode and the drain electrode, and a semiconductor layer insulated from the gate electrode through the gate insulating film, the semiconductor layer including a channel region and a back channel region, the semiconductor layer made of (In2O3)x(Ga2O3)y(ZnO)z(0≦x≦5, 0≦y≦5, 0≦z≦5), wherein X or Z is greater than Y in the channel region of the semiconductor layer, and Y is greater than X and Z in the back channel region of the semiconductor layer.

摘要翻译： 讨论了用于增加沟道区的导电性并抑制背沟道区的漏电流的薄膜晶体管，以及包括薄膜晶体管的显示装置。 根据实施例，薄膜晶体管包括布置在基板上的栅电极，在基板上彼此间隔开的源电极和漏电极，用于使栅电极与源电极和漏电极绝缘的栅极绝缘膜 （In 2 O 3）x（Ga 2 O 3）y（ZnO）z（0＆nlE; x＆nlE））形成的半导体层，通过栅极绝缘膜与栅电极绝缘的半导体层，所述半导体层包括沟道区域和背沟道区域 ; 5，0＆nlE; y＆nlE; 5,0＆amp; nlE; z＆nlE; 5），其中X或Z在半导体层的沟道区域中大于Y，并且Y大于半导体层的后沟道区域中的X和Z 。

公开(公告)号：US08659094B2

公开(公告)日：2014-02-25

申请号：US13113922

申请日：2011-05-23

申请人： Byung-Geol Kim ,  Gee-Sung Chae ,  Jae-Seok Heo ,  Woong-Gi Jun

发明人： Byung-Geol Kim ,  Gee-Sung Chae ,  Jae-Seok Heo ,  Woong-Gi Jun

IPC分类号： H01L29/786 ,  H01L27/105

CPC分类号： H01L27/1214 ,  G02F2001/136231 ,  G02F2001/136295 ,  G02F2202/38 ,  H01L27/1255 ,  H01L29/4908

摘要： An array substrate for a liquid crystal display device includes: a gate line and a gate electrode on a substrate, the gate electrode connected to the gate line; a gate insulating layer on the gate line and the gate electrode, the gate insulating layer including an organic insulating material such that a radical of carbon chain has a composition ratio of about 8% to about 11% by weight; a semiconductor layer on the gate insulating layer over the gate electrode; a data line crossing the gate line to define a pixel region; source and drain electrodes on the semiconductor layer, the source electrode connected to the data line and the drain electrode spaced apart from the source electrode; a passivation layer on the data line, the source electrode and the drain electrode, the passivation layer having a drain contact hole exposing the drain electrode; and a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the drain contact hole.

摘要翻译： 液晶显示装置的阵列基板包括：栅极线和衬底上的栅电极，栅电极连接到栅极线; 栅极线上的栅极绝缘层和栅电极，所述栅极绝缘层包括有机绝缘材料，使得碳链的基团的组成比为约8％至约11％重量; 位于栅电极上的栅极绝缘层上的半导体层; 与栅极线交叉以限定像素区域的数据线; 源电极和漏电极，源极连接到数据线，漏电极与源电极间隔开; 数据线上的钝化层，源电极和漏电极，钝化层具有暴露漏电极的漏极接触孔; 以及钝化层上的像素电极，所述像素电极通过漏极接触孔连接到漏电极。

公开(公告)号：US20120244476A1

公开(公告)日：2012-09-27

申请号：US13402902

申请日：2012-02-23

申请人： JIN-SEOK HEO ,  SEOK-HWAN OH ,  JEONG-HO YEO

发明人： JIN-SEOK HEO ,  SEOK-HWAN OH ,  JEONG-HO YEO

IPC分类号： G03F7/20

CPC分类号： G03F7/20 ,  G03F7/70075 ,  G03F7/70133 ,  G03F7/70608 ,  G03F7/70616

摘要： The energy distribution of exposure light directed passing through the slit of an exposure apparatus is determined. A photoresist layer on a substrate is exposed over a plurality of shots while changing the intensity of the exposure light for each shot. Then the photoresist layer is developed to form a sample photoresist layer. An image of the developed sample photoresist layer is analyzed for color intensity. Values of the color intensity across a selected one of the shots are correlated with values of the intensity of the exposure light to produce an energy distribution of the exposure light along the length of the slit. The energy distribution is used to change the slit so that a more desirable energy distribution may be realized when the slit is used in a process of manufacturing a semiconductor device.

摘要翻译： 确定通过曝光装置的狭缝的曝光光的能量分布。 衬底上的光致抗蚀剂层在多次照射下曝光，同时改变每次射击的曝光光的强度。 然后将光致抗蚀剂层显影以形成样品光致抗蚀剂层。 分析显影样品光致抗蚀剂层的图像的颜色强度。 所选择的一个拍摄中的颜色强度的值与曝光光的强度的值相关，以产生沿着狭缝的长度的曝光光的能量分布。 使用能量分布来改变狭缝，使得当在制造半导体器件的工艺中使用狭缝时可以实现更理想的能量分布。

公开(公告)号：US20120176082A1

公开(公告)日：2012-07-12

申请号：US13405472

申请日：2012-02-27

申请人： JinKyu LEE ,  Jin Seok HEO ,  Min Chul JANG ,  DalMo KANG

发明人： JinKyu LEE ,  Jin Seok HEO ,  Min Chul JANG ,  DalMo KANG

IPC分类号： H02J7/00 ,  B60W10/24 ,  B60W10/26

CPC分类号： H02J7/0054 ,  B60L1/02 ,  B60L3/0046 ,  B60L11/1868 ,  B60L11/1872 ,  B60L11/1875 ,  B60L2210/12 ,  B60L2210/14 ,  B60L2240/545 ,  B60L2240/662 ,  H01M10/425 ,  H01M10/4264 ,  H01M10/443 ,  H01M10/486 ,  H01M10/615 ,  H01M10/625 ,  H01M10/637 ,  H01M10/647 ,  H01M16/00 ,  H01M16/003 ,  H01M16/006 ,  H02J7/0057 ,  Y02T10/7005 ,  Y02T10/7066 ,  Y02T10/7225 ,  Y02T10/7233 ,  Y02T10/7291 ,  Y02T90/16

摘要： Disclosed is a battery pack system to supply current necessary to operate an external device, including a battery module including battery cells which can be charged and discharged, a temperature sensor, an auxiliary power unit to supply a charge and discharge pulse current to the battery module, and a controller to connect the auxiliary power unit to the battery module so that the charge and discharge pulse current is supplied to the battery module when a measured temperature (Tbat) of the battery module is less than a set temperature (Tcrit) based on information detected by the temperature sensor before the battery module is electrically connected to the external device and to interrupt the supply of the charge and discharge pulse current to the battery module when the temperature of the battery module becomes equal to or greater than the set temperature (Tcrit) and an operating method of the same.

摘要翻译： 公开了一种用于提供操作外部设备所需的电流的电池组系统，包括包括可以充放电的电池单元的电池模块，温度传感器，辅助电源单元，以向电池模块提供充电和放电脉冲电流 以及控制器，用于当所述电池模块的测量温度（Tbat）小于设定温度（Tcrit）时，将所述辅助电源单元连接到所述电池模块，使得所述充电和放电脉冲电流被提供给所述电池模块 在电池模块电连接到外部装置之前由温度传感器检测到的信息，并且当电池模块的温度等于或大于设定温度时中断向电池模块的充电和放电脉冲电流的供应（ Tcrit）及其操作方法。

公开(公告)号：US20120141029A1

公开(公告)日：2012-06-07

申请号：US13158804

申请日：2011-06-13

申请人： Joon Hyuk CHA ,  Kyoung Mu Lee ,  Yong Seok Heo ,  Young Su Moon ,  Sang Uk Lee ,  Shi Hwa Lee

发明人： Joon Hyuk CHA ,  Kyoung Mu Lee ,  Yong Seok Heo ,  Young Su Moon ,  Sang Uk Lee ,  Shi Hwa Lee

IPC分类号： G06K9/34 ,  G06K9/36

CPC分类号： G06T5/50 ,  G06T5/009 ,  G06T2207/20208 ,  H04N5/2355

摘要： An apparatus and method creating a ghost-free High Dynamic Range Image (HDRI) based on filtering are provided. It is possible to effectively prevent a ghost phenomenon from occurring when a single HDRI is created from a plurality of LDRIs, by defining a ghost area using a probability based on a global transfer function indicating a relationship for intensities of several frames, rather than searching for or identifying a ghost area in a single or each image.

摘要翻译： 提供了一种基于过滤创建无重影高动态范围图像（HDRI）的设备和方法。 通过使用基于表示几帧的强度的关系的全局传递函数的概率来定义重影区域，而不是搜索多个LDRI，可以有效地防止当从多个LDRI创建单个HDRI时发生重影现象 或识别单个或每个图像中的鬼区。

公开(公告)号：US08129233B2

公开(公告)日：2012-03-06

申请号：US12656316

申请日：2010-01-25

申请人： Woong Gi Jun ,  Gee Sung Chae ,  Jae Seok Heo

发明人： Woong Gi Jun ,  Gee Sung Chae ,  Jae Seok Heo

IPC分类号： H01L21/00

CPC分类号： H01L29/78669 ,  H01L27/1248 ,  H01L27/1292 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L51/0533 ,  H01L51/0545

摘要： A method for fabricating a thin film transistor (TFT) on a substrate includes forming a gate electrode; forming a semiconductor layer being insulated from the gate electrode and partially overlapped with the gate electrode; sequentially forming first and second gate insulating layers between the gate electrode and the semiconductor layer, wherein the first gate insulating layer is formed of a material different from the second gate insulating layer and at least one of the first and second gate insulating layers includes a sol-compound; and forming source and drain electrodes at both sides of the semiconductor layer.

摘要翻译： 在衬底上制造薄膜晶体管（TFT）的方法包括：形成栅电极; 形成与所述栅电极绝缘并与所述栅电极部分重叠的半导体层; 在栅电极和半导体层之间依次形成第一栅极绝缘层和第二栅极绝缘层，其中第一栅极绝缘层由不同于第二栅极绝缘层的材料形成，并且第一和第二栅极绝缘层中的至少一个包括溶胶 -复合; 以及在半导体层的两侧形成源极和漏极。

公开(公告)号：US20110220893A1

公开(公告)日：2011-09-15

申请号：US13113922

申请日：2011-05-23

申请人： Byung-Geol Kim ,  Gee-Sung Chae ,  Jae-Seok Heo ,  Woong-Gi Jun

发明人： Byung-Geol Kim ,  Gee-Sung Chae ,  Jae-Seok Heo ,  Woong-Gi Jun

IPC分类号： H01L29/786

CPC分类号： H01L27/1214 ,  G02F2001/136231 ,  G02F2001/136295 ,  G02F2202/38 ,  H01L27/1255 ,  H01L29/4908

摘要： An array substrate for a liquid crystal display device includes: a gate line and a gate electrode on a substrate, the gate electrode connected to the gate line; a gate insulating layer on the gate line and the gate electrode, the gate insulating layer including an organic insulating material such that a radical of carbon chain has a composition ratio of about 8% to about 11% by weight; a semiconductor layer on the gate insulating layer over the gate electrode; a data line crossing the gate line to define a pixel region; source and drain electrodes on the semiconductor layer, the source electrode connected to the data line and the drain electrode spaced apart from the source electrode; a passivation layer on the data line, the source electrode and the drain electrode, the passivation layer having a drain contact hole exposing the drain electrode; and a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the drain contact hole

摘要翻译： 液晶显示装置的阵列基板包括：栅极线和衬底上的栅电极，栅电极连接到栅极线; 栅极线上的栅极绝缘层和栅电极，所述栅极绝缘层包括有机绝缘材料，使得碳链的基团的组成比为约8％至约11％重量; 位于栅电极上的栅极绝缘层上的半导体层; 与栅极线交叉以限定像素区域的数据线; 源电极和漏电极，源极连接到数据线，漏电极与源电极间隔开; 数据线上的钝化层，源电极和漏电极，钝化层具有暴露漏电极的漏极接触孔; 以及钝化层上的像素电极，所述像素电极通过漏极接触孔连接到漏电极

公开(公告)号：US07977676B2

公开(公告)日：2011-07-12

申请号：US11646718

申请日：2006-12-27

申请人： Bo Hyun Lee ,  Jae Seok Heo ,  Woong Gi Jun

发明人： Bo Hyun Lee ,  Jae Seok Heo ,  Woong Gi Jun

IPC分类号： H01L29/04

CPC分类号： H01L27/1248 ,  G02F1/136227

摘要： A thin film transistor (TFT) array substrate and a method for fabricating the thin film transistor (TFT) array substrate is disclosed, wherein a passivation layer is directly subjected to exposing and patterning processes without using any photoresist, thereby simplifying the fabrication process and ensuring reduced preparation costs. In particular, the method comprises a thin film transistor (TFT) array comprising: forming a gate line and a gate electrode on a substrate; forming a semiconductor layer to be insulated from the gate electrode, and overlapped with a portion of the gate electrode; forming a source electrode and a drain electrode on both sides of the semiconductor layer, respectively, while forming a data line intersecting with the gate line; forming a passivation layer over an entire upper surface of the substrate including the source electrode and the drain electrode using a sol compound of a metal alkoxide having a photosensitive group X and a silicon alkoxide having a photosensitive group Y; light-exposing and developing the passivation layer to form a contact hole through which the drain electrode is exposed; and forming a pixel electrode to be in contact with the drain electrode through the contact hole.

摘要翻译： 公开了薄膜晶体管（TFT）阵列基板和制造薄膜晶体管（TFT）阵列基板的方法），其中钝化层直接进行曝光和图案化处理，而不使用任何光致抗蚀剂，从而简化制造工艺并确保 降低准备成本。 特别地，该方法包括薄膜晶体管（TFT）阵列，其包括：在基板上形成栅极线和栅电极; 形成与所述栅电极绝缘的半导体层，并与所述栅电极的一部分重叠; 在形成与栅极线相交的数据线的同时分别在半导体层的两侧形成源电极和漏电极; 使用具有感光性基团X的金属醇盐和具有感光性基团Y的硅醇盐的溶胶化合物，在包含源电极和漏电极的基板的整个上表面上形成钝化层; 曝光和显影钝化层以形成漏电极暴露的接触孔; 以及通过接触孔形成与漏电极接触的像素电极。