公开(公告)号：US20110147772A1

公开(公告)日：2011-06-23

申请号：US12969302

申请日：2010-12-15

申请人： Anthony Lochtefeld ,  Hugues Marchand

发明人： Anthony Lochtefeld ,  Hugues Marchand

IPC分类号： H01L33/32

CPC分类号： H01L33/486 ,  C30B29/06 ,  C30B33/10 ,  H01L21/02389 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/32 ,  H01S5/32341

摘要： Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods. A method for making an SSL device substrate in accordance with one embodiment of the disclosure includes forming multiple crystals carried by a support member, with the crystals having an orientation selected to facilitate formation of gallium nitride. The method can further include forming a volume of gallium nitride carried by the crystals, with the selected orientation of the crystals at least partially controlling a crystal orientation of the gallium nitride, and without bonding the gallium nitride, as a unit, to the support member. In other embodiments, the number of crystals can be increased by a process that includes annealing a region in which the crystals are present, etching the region to remove crystals having an orientation other than the selected orientation, and/or growing the crystals having the selected orientation.

摘要翻译： 用于固态照明器件的氮化镓晶片衬底，以及相关的系统和方法。 根据本公开的一个实施例的制造SSL器件衬底的方法包括形成由支撑构件承载的多个晶体，其中所述晶体具有被选择为便于形成氮化镓的取向。 该方法还可以包括形成由晶体承载的体积的氮化镓，其中晶体的选定取向至少部分地控制氮化镓的晶体取向，并且不将氮化镓作为一个单元连接到支撑构件 。 在其它实施方案中，可以通过包括对其中存在晶体的区域进行退火的方法来增加晶体的数量，蚀刻该区域以除去具有不同于所选取向的取向的晶体，和/或生长具有所选择的晶体的晶体 方向。

公开(公告)号：US07687888B2

公开(公告)日：2010-03-30

申请号：US09922122

申请日：2001-08-03

申请人： Hugues Marchand ,  Brendan Jude Moran

发明人： Hugues Marchand ,  Brendan Jude Moran

IPC分类号： H01L29/20

CPC分类号： H01L23/562 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of controlling stress in GaN films deposited on silicon and silicon carbide substrates and the films produced therefrom are disclosed. A typical method comprises providing a substrate and depositing a graded gallium nitride layer on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply. A typical semiconductor film comprises a substrate and a graded gallium nitride layer deposited on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply.

公开(公告)号：US07655090B2

公开(公告)日：2010-02-02

申请号：US11855785

申请日：2007-09-14

申请人： Hugues Marchand ,  Brendan Jude Moran

发明人： Hugues Marchand ,  Brendan Jude Moran

IPC分类号： C30B25/14

CPC分类号： H01L23/562 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of controlling stress in GaN films deposited on silicon and silicon carbide substrates and the films produced therefrom are disclosed. A typical method comprises providing a substrate and depositing a graded gallium nitride layer on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply. A typical semiconductor film comprises a substrate and a graded gallium nitride layer deposited on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply.

摘要翻译： 公开了控制沉积在硅和碳化硅衬底上的GaN膜中的应力控制方法和由其制备的膜。 典型的方法包括提供衬底并在衬底上沉积梯度的氮化镓层，其具有基本上连续等级的从初始组成到由生长室中的至少一种前体的供应形成的最终组成的变化的组成，而不会中断 在供应。 典型的半导体膜包括沉积在衬底上的衬底和梯度的氮化镓层，其具有从初始组成到最终组成的基本连续等级的变化的组成，其由在生长室中供应至少一种前体而形成，而不会中断 在供应。

公开(公告)号：US08525230B2

公开(公告)日：2013-09-03

申请号：US12901988

申请日：2010-10-11

申请人： Hugues Marchand ,  Brendan J. Moran ,  Umesh K. Mishra ,  James S. Speck

发明人： Hugues Marchand ,  Brendan J. Moran ,  Umesh K. Mishra ,  James S. Speck

IPC分类号： H01L29/737

CPC分类号： H01L23/562 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： A field effect transistor including a compositionally graded group-III nitride layer on a silicon substrate.

摘要翻译： 一种场效应晶体管，包括在硅衬底上的III族氮化物层。

公开(公告)号：US20120068191A1

公开(公告)日：2012-03-22

申请号：US13306763

申请日：2011-11-29

申请人： Hugues Marchand ,  Brendan J. Moran ,  Umesh K. Mishra ,  James S. Speck

发明人： Hugues Marchand ,  Brendan J. Moran ,  Umesh K. Mishra ,  James S. Speck

IPC分类号： H01L33/32 ,  H01L29/267

CPC分类号： H01L23/562 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of controlling stress in GaN films deposited on silicon and silicon carbide substrates and the films produced therefrom are disclosed. A typical method comprises providing a substrate and depositing a graded gallium nitride layer on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply. A typical semiconductor film comprises a substrate and a graded gallium nitride layer deposited on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply.

摘要翻译： 公开了控制沉积在硅和碳化硅衬底上的GaN膜中的应力控制方法和由其制备的膜。 典型的方法包括提供衬底并在衬底上沉积梯度的氮化镓层，其具有基本上连续等级的从初始组成到由生长室中的至少一种前体的供应形成的最终组成的变化的组成，而不会中断 在供应。 典型的半导体膜包括沉积在衬底上的衬底和梯度的氮化镓层，其具有从初始组成到最终组成的基本连续等级的变化的组成，其由在生长室中供应至少一种前体而形成，而不会中断 在供应。

公开(公告)号：US20110108886A1

公开(公告)日：2011-05-12

申请号：US12901988

申请日：2010-10-11

申请人： Hugues Marchand ,  Brendan J. Moran ,  Umesh K. Mishra ,  James S. Speck

发明人： Hugues Marchand ,  Brendan J. Moran ,  Umesh K. Mishra ,  James S. Speck

IPC分类号： H01L29/737

CPC分类号： H01L23/562 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of controlling stress in GaN films deposited on silicon and silicon carbide substrates and the films produced therefrom are disclosed. A typical method comprises providing a substrate and depositing a graded gallium nitride layer on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply. A typical semiconductor film comprises a substrate and a graded gallium nitride layer deposited on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply.

摘要翻译： 公开了控制沉积在硅和碳化硅衬底上的GaN膜中的应力控制方法和由其制备的膜。 典型的方法包括提供衬底并在衬底上沉积梯度的氮化镓层，其具有基本上连续等级的从初始组成到由生长室中的至少一种前体的供应形成的最终组成的变化的组成，而不会中断 在供应。 典型的半导体膜包括沉积在衬底上的衬底和梯度的氮化镓层，其具有从初始组成到最终组成的基本连续等级的变化的组成，其由在生长室中供应至少一种前体而形成，而不会中断 在供应。

公开(公告)号：US20090242898A1

公开(公告)日：2009-10-01

申请号：US12471134

申请日：2009-05-22

申请人： Hugues Marchand ,  Brendan Jude Moran

发明人： Hugues Marchand ,  Brendan Jude Moran

IPC分类号： H01L29/20

CPC分类号： H01L23/562 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of controlling stress in GaN films deposited on silicon and silicon carbide substrates and the films produced therefrom are disclosed. A typical method comprises providing a substrate and depositing a graded gallium nitride layer on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply. A typical semiconductor film comprises a substrate and a graded gallium nitride layer deposited on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply.

摘要翻译： 公开了控制沉积在硅和碳化硅衬底上的GaN膜中的应力控制方法和由其制备的膜。 典型的方法包括提供衬底并在衬底上沉积梯度的氮化镓层，其具有基本上连续等级的从初始组成到由生长室中的至少一种前体的供应形成的最终组成的变化的组成，而不会中断 在供应。 典型的半导体膜包括沉积在衬底上的衬底和梯度的氮化镓层，其具有从初始组成到最终组成的基本连续等级的变化的组成，其由在生长室中供应至少一种前体而形成，而不会中断 在供应。

公开(公告)号：US20080102610A1

公开(公告)日：2008-05-01

申请号：US11855785

申请日：2007-09-14

申请人： Hugues Marchand ,  Brendan Moran

发明人： Hugues Marchand ,  Brendan Moran

IPC分类号： H01L21/36

CPC分类号： H01L23/562 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of controlling stress in GaN films deposited on silicon and silicon carbide substrates and the films produced therefrom are disclosed. A typical method comprises providing a substrate and depositing a graded gallium nitride layer on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply. A typical semiconductor film comprises a substrate and a graded gallium nitride layer deposited on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply.

摘要翻译： 公开了控制沉积在硅和碳化硅衬底上的GaN膜中的应力控制方法和由其制备的膜。 典型的方法包括提供衬底并在衬底上沉积梯度的氮化镓层，其具有基本上连续等级的从初始组成到由生长室中的至少一种前体的供应形成的最终组成的变化的组成，而不会中断 在供应。 典型的半导体膜包括沉积在衬底上的衬底和梯度的氮化镓层，其具有从初始组成到最终组成的基本连续等级的变化的组成，其由在生长室中供应至少一种前体而形成，而不会中断 在供应。

公开(公告)号：US09129977B2

公开(公告)日：2015-09-08

申请号：US13306763

申请日：2011-11-29

申请人： Hugues Marchand ,  Brendan J. Moran ,  Umesh K. Mishra ,  James S. Speck

发明人： Hugues Marchand ,  Brendan J. Moran ,  Umesh K. Mishra ,  James S. Speck

IPC分类号： H01L33/32 ,  H01L29/267 ,  H01L23/00 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02 ,  H01L33/00 ,  H01L29/20 ,  H01L29/205 ,  H01L33/12

CPC分类号： H01L23/562 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of controlling stress in GaN films deposited on silicon and silicon carbide substrates and the films produced therefrom are disclosed. A typical method comprises providing a substrate and depositing a graded gallium nitride layer on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply. A typical semiconductor film comprises a substrate and a graded gallium nitride layer deposited on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply.

摘要翻译： 公开了控制沉积在硅和碳化硅衬底上的GaN膜中的应力控制方法和由其制备的膜。 典型的方法包括提供衬底并在衬底上沉积梯度的氮化镓层，其具有基本上连续等级的从初始组成到由生长室中的至少一种前体的供应形成的最终组成的变化的组成，而不会中断 在供应。 典型的半导体膜包括沉积在衬底上的衬底和梯度的氮化镓层，其具有从初始组成到最终组成的基本连续等级的变化的组成，其由在生长室中供应至少一种前体而形成，而不会中断 在供应。

公开(公告)号：US09012253B2

公开(公告)日：2015-04-21

申请号：US12969302

申请日：2010-12-15

申请人： Anthony Lochtefeld ,  Hugues Marchand

发明人： Anthony Lochtefeld ,  Hugues Marchand

IPC分类号： H01L21/00 ,  H01L33/00 ,  C30B29/06 ,  C30B33/10 ,  H01L21/02 ,  H01L33/16 ,  H01S5/323

CPC分类号： H01L33/486 ,  C30B29/06 ,  C30B33/10 ,  H01L21/02389 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/32 ,  H01S5/32341

摘要： Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods. A method for making an SSL device substrate in accordance with one embodiment of the disclosure includes forming multiple crystals carried by a support member, with the crystals having an orientation selected to facilitate formation of gallium nitride. The method can further include forming a volume of gallium nitride carried by the crystals, with the selected orientation of the crystals at least partially controlling a crystal orientation of the gallium nitride, and without bonding the gallium nitride, as a unit, to the support member. In other embodiments, the number of crystals can be increased by a process that includes annealing a region in which the crystals are present, etching the region to remove crystals having an orientation other than the selected orientation, and/or growing the crystals having the selected orientation.

摘要翻译： 用于固态照明器件的氮化镓晶片衬底，以及相关的系统和方法。 根据本公开的一个实施例的制造SSL器件衬底的方法包括形成由支撑构件承载的多个晶体，其中所述晶体具有被选择为便于形成氮化镓的取向。 该方法还可以包括形成由晶体承载的体积的氮化镓，其中晶体的选定取向至少部分地控制氮化镓的晶体取向，并且不将氮化镓作为一个单元连接到支撑构件 。 在其它实施方案中，可以通过包括对其中存在晶体的区域进行退火的方法来增加晶体的数量，蚀刻该区域以除去具有不同于所选取向的取向的晶体，和/或生长具有所选择的晶体的晶体 方向。